扇形波导谐振宽边纵缝的归一化电导

扇形波导可作为高功率微波圆柱共形波导缝隙阵天线的基本单元。分析了扇形波导中主模场分量,根据实际情况对主模场进行了合理近似。采用互易定理推导由波导主模横向场分量和缝隙场分量表示的波导场分量的前向或后向散射系数。根据波导传输线理论,将波导宽边纵缝等效为并联导纳,再根据波导边界条件得到扇形波导宽边谐振纵缝的归一化电导与波导散射系数之间的关系式。根据缝隙天线与振子天线的互补关系得到扇形波导谐振缝隙的辐射阻抗,结合波导功率平衡关系得到由波导横向场散射系数表示的缝隙辐射功率表达式,得到归一化电导的与谐振宽边纵缝的偏移位置、缝隙宽度、波导波长以及扇形波导尺寸参数之间的解析表达式。给出了算例,在波导中间区域,通过商用软件计算得到的电导与理论公式结果基本吻合。     

高功率微波行波阵列纵向宽角扫描特性

利用机械调节波导宽边尺寸可变化波导波长,从而实现变频波束扫描相同的效果,针对窄边辐射波导行波阵的波束扫描特性进行了分析,以实现宽角波束扫描为目标,着重分析了不同辐射缝隙间距下变化宽边所能得到的最大波束扫描范围。设计了通过变化宽边尺寸实现宽角扫描的X波段窄边辐射波导缝隙阵,设计波束扫描范围指向波导馈入端,避开阵列法向辐射(此方向辐射效率较低),实现了29°的连续波束扫描范围,在波束扫描范畴内增益下降小于3 dB,辐射效率大于62%;设计缝隙宽度3 mm, 波导长度约1 m(缝隙数40),单根波导缝隙天线可实现高功率微波功率容量70 MW。     

高功率微波波导缝隙阵宽角扫描特性研究

波导间缝隙的互耦会严重降低高功率微波宽边纵缝波导缝隙阵的宽角扫描能力。设计了一L波段高功率宽边纵缝波导缝隙阵,在阵列波导间设计扼流槽结构抑制缝隙互耦。数值模拟结果表明,没有扼流槽结构的阵列波束扫描增益下降3 dB的角度为24.7°,具有扼流结构的阵列扫描增益下降3 dB的角度为33°。同时扼流结构还可以明显改善阵列的有源反射系数,有扼流结构的阵列有源VSWR≤3的带宽为6.6%,而没有扼流结构的阵列有源VSWR≤3的带宽为5.0%。数值模拟结果还表明,波束扫描时(扫描角35°),阵列功率容量可达到957 MW, 比阵列无波束扫描时(1.008 GW)稍低一点。     

高功率微波波导缝隙阵宽角扫描特性研究（英文）

波导间缝隙的互耦会严重降低高功率微波宽边纵缝波导缝隙阵的宽角扫描能力。设计了一L波段高功率宽边纵缝波导缝隙阵,在阵列波导间设计扼流槽结构抑制缝隙互耦。数值模拟结果表明,没有扼流槽结构的阵列波束扫描增益下降3dB的角度为24.7°,具有扼流结构的阵列扫描增益下降3dB的角度为33°。同时扼流结构还可以明显改善阵列的有源反射系数,有扼流结构的阵列有源VSWR≤3的带宽为6.6%,而没有扼流结构的阵列有源VSWR≤3的带宽为5.0%。数值模拟结果还表明,波束扫描时(扫描角35°),阵列功率容量可达到957 MW,比阵列无波束扫描时(1.008GW)稍低一点。     

高功率谐振式波导缝隙阵宽角扫描技术

在传统高功率缝隙波导阵列中,缝隙间的相互耦合严重影响了阵列的宽角扫描能力。以实现阵列宽角波束扫描为目标,通过分析阵列扫描特性,从提高缝隙阵元间隔离度的角度出发,提出在阵列中引入隔离栅结构,降低了阵元间耦合对阵列大角度扫描时的影响。在此基础上,设计了基于波导窄边斜缝的谐振式阵列天线,采用电磁仿真软件优化阵列。数值模拟结果表明,未采取措施前阵列的最大扫描范围为±34°,引入隔离栅后扫描范围可扩大至±45°,波导端口S₁₁≤?10 dB,增益仅下降了2.3 dB,单根缝隙波导功率容量达330 MW,有应用于高功率微波领域的潜质。     

W波段基片集成波导缝隙阵天线的研究

介绍了一种低成本高效率的W波段4×4基片集成波导(SIW)缝隙阵天线。天线阵为双层结构,上层为辐射层,采用宽边纵向偏移缝隙驻波阵,可以实现高的辐射功率,下层为馈电层,采用SIW串联缝隙馈电方式,减小了传统功分网络带来的传输损耗和实现难度。对天线阵进行了优化设计,采用标准低成本PCB工艺制作了天线阵实物样品并进行测试。测试结果与仿真结果吻合较好,天线阵在94 GHz时,最大增益为16.8 dB,反射系数-30.1 dB,-10 dB带宽为92.6~96 GHz,副瓣电平19.5 dB,天线阵口径效率为83%。     

X波段低副瓣波导缝隙阵列天线特性

根据Stevenson等效电路法设计了两个X波段低副瓣波导缝隙阵列天线。通过建立多个缝隙时的谐振长度提取模型,计算了存在缝隙间互耦时的谐振长度。两个阵列天线测试结果和仿真结果吻合良好,线阵中心频率实测增益为17.83dB,其仿真结果为18.2dB,实测副瓣为-28.12dB,其仿真结果为-29.97dB;平面阵列中心频率实测增益为27dB,其仿真结果为27.9dB,实测H面副瓣为-27.2dB,其仿真结果为-29.9dB,实测E面副瓣为-22dB,其仿真结果为-22dB。     

太赫兹波导滤波器的分析与设计

分析了不同宽边情况下对滤波器加工精度的影响,分析结果表明对于不同频段的滤波器,需要选择合适的谐振腔的宽边才能达到较好的性能,同时分析了不同谐振模式的滤波器对加工精度的影响,分析表明,对于太赫兹频段滤波器,选用TE101谐振模式时存在腔体长度会比波导的宽边小很多的情况,而选用高阶谐振模式不但可以提高滤波器的品质因数Q值,减少损耗,同时也能在一定程度上降低滤波器对加工精度的要求。最后以0.34 THz 4阶带通滤波器为例验证此方法的正确性,测试表明该滤波器最低损耗为-0.73 dB,在0.335~0.349 THz范围内损耗在-2 dB以内。     

基于双缝隙结构的电光调制器设计与工艺实现

受铜线带宽小、延时大、功耗高的限制,下一代芯片互连较为可行的一种解决方式是采用光互连.调制器作为其中的关键器件,有重要的研究意义.设计了一种新型的硅基双缝隙波导电光调制器,该调制器结构采用法布里-珀罗微谐振器,依靠缝隙内高非线性聚合物的快速电光效应,通过外加电压达到调制效果.调制器结构包含了新型的一般微纳波导到双缝隙波...     

L波段高功率波导缝隙阵设计与数值模拟

设计了一种基于宽边纵缝驻波阵的高功率射频微波辐射系统,系统由四路矩形波导以及聚四氟乙烯天线窗组成。天线内采用真空绝缘实现天线高功率容量,天线窗真空侧采用周期刻三角槽技术抑制高功率微波介质表面击穿。在波导缝隙阵与天线窗之间设计支撑板,除支撑天线窗外还可抑制表面波电流。采用HFSS数值模拟软件对辐射系统进行了优化设计。数值模拟结果表明,设计的辐射系统在频率为1.575 GHz时,增益为22.7 dBi,天线口径效率为98.3%,反射系数为-25 dB,带宽达到5%,带宽内天线增益波动小于等于0.4 dB、天线口径效率大于等于98%、主瓣指向偏差小于等于1.2。系统功率容量达到1.92 GW。     

波导缝隙阵列天线高功率微波应用探索

设计了一种波导窄边缝隙天线阵,其微波传输工作于行波状态,绝大部分能量被缝隙耦合辐射,其余能量被匹配负载吸收。通过等效电路的方法,使得各个缝隙达到均匀辐射,从而具备可拓展组阵能力,此外通过设计移相结构改变相位差,实现方位角方向的波束扫描。该缝隙天线工作在行波状态,避免了电场集中现象的出现,且工作于真空环境,具有较高的功率容量。     

Electro-optical resonant switching in two-dimensional side-coupled waveguide-cavity photonic crystal systems

Photonic crystals have many potential applications because of their ability to control lightwave propagation. We have investigated the electro-optical resonant switching in two-dimensional photonic crystal structures. The optical microcavity side coupled with a waveguide composed of a dielectric cylinder in air is studied by solving Maxwell?s equations using the plane wave expansion method and finite-difference time-domain method. The switching mechanism is a change in the conductance of the microcavity and hence modulating the resonant mode and eventually resonant switching is achieved. Such a mechanism of switching should open up a new application for designing components in photonic integrated circuits.     

石英管对平行WR-430波导谐振腔电场的影响

详细讨论了石英管对平行WR-430波导谐振腔内部电场强度的影响。在没有石英管时,电场强度在每个狭缝附近发生突变,其峰值沿着一个波导逐渐减小,而沿着另外一个波导逐渐增大。存在石英管时,内部电场变弱且沿着石英管内表面无规则振荡,而且电场沿着两个波导之间的中心轴线波动。当石英管壁厚度和离上下波导的距离分别为5和2 mm时,谐振腔内部的平均电场强度达到最大,而且电场强区面积较大。当上述两者分别超过5和2 mm时,内部电场的最大值会随着石英管壁厚度和距离逐渐减弱。低气压和大气压空气等离子体在谐振腔内部被激发,其形态比较接近各自的仿真的电场强度分布。     

Numerical analysis for millimeter wave slot type coupler

The numerical analysis for millimeter wave slot type coupler of overmode waveguide cavity is studied by mode-matching taking account of the thickness of the plate on which the slot is cut. It is found that the higher modes in cavity can be suppressed by proper thickness of the plat and proper dimension of the output waveguide.     

Investigation of a slot nanoantenna in optical frequency range

Following the analogy of radio frequency slot antenna and its complementary dipole, we propose the implementation of a slot nanoantenna (SNA) in the optical frequency range. Using finite-difference time-domain (FDTD) method, we investigate the electromagnetic (EM) properties of a SNA formed in a thin gold film and compare the results with the properties of a gold dipole nanoantenna (DNA) of the same dimension as the slot. It is found that the response of the SNA is very similar to the DNA, like their counterparts in the radio frequency (RF) range. The SNA can enhance the near field intensity of incident field which strongly depends on its feedgap dimension. The resonance of the SNA is influenced by its slot length; for the increasing slot length, resonant frequency decreases whereas the sharpness of resonance increases. Besides, the resonance of the SNA is found sensitive to the thickness of metal film, when the latter is smaller than the skin depth. The effect of polarization of incident field on the EM response of the SNA was examined; the field enhancement is optimum when polarization is parallel to the feedgap. Finally, we calculate the radiation patterns of the DNA and SNA and compare them with those of the RF dipole antenna. The radiation pattern of the SNA is found to be independent of its slot length when excited at resonant frequency. To the best of our knowledge, this is the first study on a slot antenna in the optical frequency.     

Resonance and Antiresonance in Electronic Transport Process Through a T-Shaped Quantum Waveguide

By means of the transfer matrix approach, the linear conductance spectrum for electronic transport through a T-shaped quantum waveguide is calculated. The resonant peaks and the antiresonant dips in the conductance spectrum are mainly focused. The previous prediction about their positions by other theoretical approaches is checked. In addition, a function of spin filtering is suggested based on the interplay of the resonance and antiresonance in this T-shaped quantum waveguide.     

Induced transparency in nanoscale plasmonic resonator systems

An optical effect analogous to electromagnetically induced transparency (EIT) is observed in nanoscale plasmonic resonator systems. The system consists of a slot cavity as well as plasmonic bus and resonant waveguides, where the phase-matching condition of the resonant waveguide is tunable for the generation of an obvious EIT-like coupled resonator-induced transparency effect. A dynamic theory is utilized to exactly analyze the influence of physical parameters on transmission characteristics. The transparency effect induced by coupled resonance may have potential applications for nanoscale optical switching, nanolaser, and slow-light devices in highly integrated optical circuits.     

共振增强的量子效应初步研究

 利用量子效应原理分析了波包在势阱中的传输,通过分类讨论得出了出现共振透射现象的条件。将其与已有高功率微波孔缝耦合的数值模拟和实验结果相比较发现：其共振条件和使用数值模拟和实验得到的共振条件基本一致,即垂直入射电场分量的缝（或边）为入射半波长的整数倍时会出现共振增强现象。不仅验证了已有的高功率微波孔缝耦合数值模拟和实验结果,而且有助于解释一些复杂电子系统高功率微波效应实验中出现的强耦合现象。     

Acoustic phonons transport in a quantum waveguide embedded double defects

By using scattering matrix method, we investigate the acoustic phonons transport in a quantum waveguide embedded double defects at low temperatures. When acoustic phonons propagate through the waveguide, the total transmission coefficient versus the reduced phonon frequency exhibits a series of resonant peaks and dips, and acoustic waves interfere with each other in the waveguide to form standing wave with particular wavelengths. In the waveguide with void defects, acoustic phonons whose frequencies approach zero can transport without scattering. The acoustic phonons propagating in the waveguide with clamped material defects, the phonons frequencies must be larger than a threshold frequency. It is also found that the thermal conductance versus temperature is qualitatively different for different types of defects. At low temperatures, when the double defects are void, the universal quantum thermal conductance and a thermal conductance plateau can be clearly observed. However, when the double defects consist of clamped material, the quantized thermal conductance disappears but a threshold temperature where mode 0 can be excited emerges. The results can provide some references in controlling thermal conductance artificially and the design of phonon devices.