Current-source a-Si:H thin-film transistor circuit for active-matrix organic light-emitting displays

In this letter, we describe a four thin-film-transistor (TFT) circuit based on hydrogenated amorphous silicon (a-Si:H) technology. This circuit can provide a constant output current level and can be automatically adjusted for TFT threshold voltage variations. The experimental results indicated that, for TFT threshold voltage shift as large as /spl sim/3 V, the output current variations can be less than 1 and 5% for high (/spl ges/0.5 /spl mu/A) and low (/spl les/0.1 /spl mu/A) current levels, respectively. This circuit can potentially be used for the active-matrix organic light-emitting displays (AM-OLEDs).     

Stressing organic light-emitting diode under constant-brightness driving mode

The degradation of the organic light-emitting diodes (OLEDs) was studied under the constant-brightness driving mode. The time-dependent current exhibits a long period of linear increase followed by an exponential increase before the eventually catastrophic failure featured by a vertical increase. A new lifetime T_th is defined as the time for the device to reach the end of the linear increase stage. Similar to the well-known relation between the lifetime and the brightness in the constant-current driving mode, the lifetime and the brightness in the constant-brightness driving mode also fit the formula Lⁿ × T_th = Const., where L is the brightness and n is the acceleration exponent. By examining the current density–voltage–luminance characteristics and the photoluminescence intensity of the devices before and after the stress, it is found that both the reduction of the charge injection efficiency, and the loss of the emissive centers, contribute to the OLEDs’ degradation. The extra power supplied to the device to keep the brightness constant, raises the junction temperature, and eventually leads to the catastrophic failure of the devices.     

A red tandem organic light-emitting diode based on organic photovoltaic-type charge generation layer

In this paper, a significant enhancement in current efficiency of a red tandem organic light-emitting diode (OLED), which is based on an organic photovoltaic-type charge generation layer (CGL) of fullerene carbon 60/copper (Ⅱ) phthalocyanine, is introduced. The CGL can absorb a part of photons, radiated from emission zone, then form excitons, which are dissociated into free charges. It induces in lower driven voltage and better efficiency of tandem OLED. Compared with single emitter-unit OLED and tandem OLED with bulk heterojunction CGL, the luminous efficiency boosts remarkably with increasing current density and shows rather slower roll-off. Our results demonstrate that the organic photovoltaic heterojunction, consists of two matched n- and p-type organic semiconductors, is a promising CGL for tandem OLEDs with high efficiency.     

Active-matrix organic light-emitting diode displays realized usingmetal-induced unilaterally crystallized polycrystalline siliconthin-film transistors

Requirement on thin-film transistors, particularly in terms of current-drive and parameter uniformity, for active-matrix organic light-emitting diode displays, was analyzed. Metal-induced unilaterally crystallized polycrystalline silicon thin-film transistor technology was shown to satisfy such and other demands. Though pixel designs involving more transistors were certainly advantageous, appropriate biasing scheme allowed a simpler and larger aperture-ratio two-transistor design. As a demonstration, active matrices were fabricated and integrated with organic light-emitting diodes to make monochrome video display panels, each consisting of 120 rows and 160 columns     

A new a-Si:H thin-film transistor pixel circuit for active-matrix organic light-emitting diodes

We propose a new pixel circuit using hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs), composed of three switching and one driving TFT, for active-matrix organic light-emitting diodes (AMOLEDs) with a voltage source method. The circuit simulation results based on the measured threshold voltage shift of a-Si:H TFTs by gate-bias stress indicate that this circuit compensates for the threshold voltage shifts over 10000 h of operation.     

A new pixel circuit for driving organic light-emitting diode with low temperature polycrystalline silicon thin-film transistors

A new pixel circuit design for active matrix organic light-emitting diode (AMOLED), based on the low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs) is proposed and verified by SPICE simulation. Threshold voltage compensation pixel circuit consisting of four n-type TFTs, one p-type TFT, one additional control signal, and one storage capacitor is used to enhance display image quality. The simulation results show that this pixel circuit has high immunity to the variation of poly-Si TFT characteristics.     

用温度控制可调谐激光器波长稳定的方法

介绍了可调谐半导体激光器在光通信领域的应用及其工作原理.重点讨论了SSG-DBR可调谐激光器的结构、工作原理,以及波长稳定控制方法.提出了一种新的基于温度反馈的波长稳定控制方法,使可调谐激光器的输出在20℃～70℃范围内的波长漂移小于1nm,边模抑制比优于5dB.该方法简单、可靠,将会对可调谐激光器在全光网络中的应用起到一定的推动作用.     

Active-matrix organic light-emitting diode display driver based on second-generation current conveyor

A new voltage-programmed driver circuit for active-matrix organic light-emitting diode display based on the second-generation current conveyor is described. Simulation results show that the circuit successfully compensates for instability and spatial non-uniformity of thin-film transistors.     

芴类衍生物有机电致发光器件中的激基复合物

利用紫外-可见光吸收光谱和荧光发光(PL)光谱,研究了新型芴类小分子材料2,3-bis(9,9-dihexyl-9H-flu-oren-2-yl)-6,7-difluoroquinoxaline(F2Py)的本征光谱特性,并制备了基于F2Py的有机电致发光器件(OLEDs),讨论了器件的电致发光(EL)光谱。结果表明,F2Py在溶液状态下的本征PL峰值位于452 nm,在薄膜状态下的本征PL峰值位于448 nm,而F2Py与NPB的混合物的PL发光峰在544 nm。在器件的EL光谱中,观察到了位于530~550 nm范围的激基复合物发光峰,以及来自F2Py与NPB激子发光的共同作用形成的位于430nm左右的肩峰。当F2Py层厚度为50 nm时,器件的启亮电压为17 V,最高亮度为58 cd/m2;而当F2Py厚度为20 nm并加入了Alq3(10 nm)做电子传输层(ETL)时,器件启亮电压为8 V,最高亮度为5030 cd/m2,EL性能大大提高。     

High-speed low-power voltage-programmed driving scheme for AMOLED displays

A new voltage-programmed driving scheme named the mixed parallel addressing scheme is presented for AMOLED displays, in which one compensation interval can be divided into the first compensation frame and the consequent N-1 post-compensation frames without periods of initialization and threshold voltage detection. The proposed driving scheme has the advantages of both high speed and low driving power due to the mixture of the pipeline technology and the threshold voltage one-time detection technology. Corresponding to the proposed driving scheme, we also propose a new voltage-programmed compensation pixel circuit, which consists of five TFTs and two capacitors(5T2C). In-Zn-O thin-film transistors(IZO TFTs) are used to build the proposed 5T2C pixel circuit. It is shown that the non-uniformity of the proposed pixel circuit is considerably reduced compared with that of the conventional 2T1C pixel circuit. The number of frames(N) preserved in the proposed driving scheme are measured and can be up to 35 with the variation of the OLED current remaining in an acceptable range. Moreover, the proposed voltage-programmed driving scheme can be more valuable for an AMOLED display with high resolution, and may also be applied to other compensation pixel circuits.     

Increase of current density and luminance in organic light-emitting diode with reverse bias driving

When applying the voltage pulses (6 V) to the organic light-emitting diode based on tris(8-hydroxyquinolinato) aluminium (Alq₃) as the electron transporting layer, current density and luminance increased by 16% and 20%, respectively, by providing the reverse bias (−16 V) during the off-period. By using displacement current measurement, we can deduce that such an enhancement resulted from the interfacial positive charges trapped at the Alq₃/cathode interface, with the relaxation time ∼0.4 ms. By doping the organic material as the carrier trapping sites at Alq₃/cathode interface, such current density and luminance increase can be further enhanced. 25% and 36% increase in current density and luminance was demonstrated with such driving technique, respectively.     

Color stable white organic light-emitting diode based on a novel triazine derivative

A novel red–orange emitting material with a branched molecular structure, 2,4,6-tris[2-(N-ethyl-3-carbazole)carboxethenyl]-1,3,5-s-triazine (TC3), has been synthesized and characterized using UV–visible, photoluminescence (PL) and electroluminescence (EL) spectroscopy. White EL devices were fabricated using TC3 as a red–orange emitter and 8-hydroxyquinolinolato lithium (Liq) as a blue–green emitter. N,N-bis(3-methylphenyl)-N,N-diphenylbenzidine (TPD) as the adjustor for charge carrier mobility was introduced between the two emitting layers to improve the stability of the white emission color on bias voltage. The EL devices of ITO/poly(N-vinylcarbazole) (PVK):TC3 (56 nm)/TPD (5 nm)/Liq (30 nm)/Mg:Ag exhibited good quality white emission. The Commission Internationale De L’Eclairage chromaticity coordinates are (0.34, 0.39) and are stable on the bias voltage.     

用于有机发光二极管的具有开关漏电抑制能力的像素电路

本文介绍了一种用于有机发光二极管微显示系统的像素电路,该电路具有开关漏电抑制能力。在信号保持期间,电路采用无外部输入的自参考环路跟踪内部节点电压,达到漏电抑制的目的。采用该漏电抑制技术可以用更小的存储电容获得更长的保持时间。采用0.35-μm CMOS 工艺实现了一个60×80像素阵列的试验系统,像素面积是15×15 μm^2。测试结果表明,本文提出的像素电路获得了超过500ms的保持时间,在100pA~3nA输出电流范围内获得了良好的精度和线性度。     

Blue-hazard free candlelight-style tandem organic light-emitting diode

Long exposure to intensive blue light may damage retina and suppress, at night, melatonin secretion. To devise a blue hazard-free light source with a long lifetime, we demonstrated here a tandem organic light-emitting diode (OLED) with candlelight-style emission, especially via the use of all commercially-available materials. The resultant device shows a color temperature of 1500 K, significantly lower than the 1800 K of oil lamps, 1900 K of candles and 2500 K of incandescent bulbs. It permits, at 100 lx, a retinal exposure-limit of 12 h, while merely 5 min for the 6000 K cold-white LED or CFL. Notably, it is 15 times more human eye-friendly and 30 % more melatonin generation-friendly than the candle. It shows a lifetime of 40,000 h at 1000 cd per meter square, which is about 20,000 times that of a candle and 40 times that of an incandescent bulb. It is 65 times more energy-saving as comparing with candles. Commercially viable human-friendly lighting can be expected in the near future to safeguard human health.     

DC sputtered indium-tin oxide transparent cathode for organic light-emitting diode

The performance of top-emitting organic light-emitting diodes depends not just on the choice of the transparent cathodes but also on their techniques of formation. Compared to the damage induced by radio frequency sputtering of indium-tin oxide cathode, that induced by DC sputtering was verified to be less severe and relatively independent of the sputtering power. Consequently, a high DC sputtering power of 120 W could be employed to achieve a high deposition rate of 0.1 nm/s. Adequate emission efficiency was maintained, even with a relatively thin 7-nm copper (II) phthalocyanine buffer layer.     

Achieving full-color organic light-emitting devices forlightweight, flat-panel displays

We review recent results in the field of organic light-emitting devices (OLED's), with particular attention to the application of organic light-emitting devices to ultra-lightweight, full color, flat-panel displays. We show that OLED brightness, efficiency, operating voltage, and lifetime is sufficient to compete with other flat-panel display technologies such as backlit liquid crystal displays. We describe a novel, tunable OLED consisting of vertically stacked, transparent light-emitting devices which can serve as a color-tunable element in high-resolution full-color display., In addition, the unique physical properties of organic thin films allow for flexible, conformable, or foldable displays which are unobtainable with conventional, inorganic semiconductor technologies     

Small polymeric nano-dot enhanced pure-white organic light-emitting diode

Marked efficiency improvement of a spin-coated phosphorescent pure-white organic light-emitting diode was obtained by incorporating a novel small polymeric nano-dot (PND) in the hole-transporting layer. The resultant device efficiency strongly depended on the concentration and size of the PND used. The resultant power efficiency at 100 cd/m², for example, was increased from 6.8 to 23.7 lm/W, an increase of 350%, as 14 wt% PND of 8 nm in size was employed. The improvement may be attributed to a better carrier-injection balance resulted from hole trapping on the PND.     

有机电致发光器件的磁电导效应研究进展

有机电致发光器件的磁电导效应,是指在恒定外加偏压下,对于不含有任何磁性材料功能层的有机电致发光器件,通过器件的电流发生变化的现象。由于器件对外磁场很敏感,通过给器件施加偏压,如果有外磁场的存在,器件的电流会有较显著地改变,通过与事先测定好的B-I 特性曲线对比,便能测定外加磁场的大小。因此利用这种效应可以制成磁场传感器等新型实用器件。有机电致发光器件中存在复杂的激发态及自旋弛豫过程,充分了解这些复杂的物理机制有助于开发更加高效的器件,而磁场会对以上物理过程产生作用,因此是一种很好的研究有机电致发光机制的工具。故这种研究具有较大的科学价值和社会应用前景。文中将从有机电致发光器件磁电导效应的研究背景、发展现状及存在问题等几个方面做详细的论述,并探讨磁电导效应产生的可能微观机制,并对未来的研究方向做进一步的展望。     

Random nano-structures as light extraction functionals for organic light-emitting diode applications

In this study, we demonstrated a nano-structured random scattering layer (RSL) as an internal light extraction method to improve the light extraction efficiency of organic light-emitting diodes (OLEDs). Using dewetted Ag droplets as a hard mask, we textured the glass surface to have a scattering layer of the random structure. OLEDs equipped with the RSL showed more that 50% improvement in the external quantum efficiency (EQE) and luminance efficacy (LE) compared to OLEDs without the RSL. This improvement can be understood by the scattering effect which reduces the optical loss at wave-guided modes. Also, by combining the RSL and an external light extraction micro-lens array (MLA), it was possible to achieve further improvements of 105.8% and 92.06% in the EQE and the LE, respectively.     

Designing a solution-processable electron transport layer for transparent organic light-emitting diode

In this work, the extensively used opaque metal cathodes of the conventionally structured OLEDs were replaced with the widely used transparent electrode indium tin oxide (ITO) for solution-processed transparent organic light-emitting diode (T-OLED). A new solution-processable electron transport layer (ETL), aside from facilitating the efficient injection of electrons into the T-OLED, protected the organic emission layer (EML) of the T-OLED against the plasma damage during top ITO cathode sputter deposition. The newly designed solution-processed ETL was the composite of the zinc oxide nanoparticles (ZnO-NPs), and cesium carbonate-doped ethoxylated polyethyleneimine (d-PEIE) with the semi-hydrophilic poly (methyl methacrylate) (PMMA) interlayer coated on the EML insured the good wettability and contact of the hydrophilic ETL with the hydrophobic EML. The solution-processed T-OLED emitted the total maximum luminance of about 2417 cd/m² (bottom side emission at 1455 cd/m² and top emission at 962 cd/m²), total maximum current efficiency at 3.12 cd/A (bottom and top emissions at about 1.78 and 1.34 cd/A, respectively), and total maximum power efficiency at 1.64 l m/W (bottom and top emissions at about 0.95 and 0.69 l m/W, respectively) while having a very high optical transmittance of around 85% at 550 nm light wavelength.