X-Ray Diffraction and Thermographic Study of Mesomorphic 4-Acylphenyl 4'-Nonyloxybenzoate CH3C(O)C6H4–OC(O)–C6H4–OC9H19

Crystallography Reports - The structure and thermal properties of mesomorphic phenyl benzoate CH3–C(O)–C6H4–OC(O)–C6H4–OC9H19 (I) were studied by differential scanning...     

Mesophase-Preceding Crystal Packing of 4,4'-Dialkyl-Substituted Salicylideneanilines; C10H21O–C6H3(OH)–CH=N–C6H4–С7Н13) Structure

Crystallography Reports - The crystal structure of 4,4'-substituted salicylideneaniline C10H21O–C6H3(OH)–CH=N–C6H4–C7H13 has been investigated by X-ray diffraction. A...     

Crystal Packing of Potentially Mesomorphic Azobenezene Derivatives R1–C6H4–N=N–C6H4–R2 (R1, R2 = CH3COO,C2H5O; CH2=C(CH3)COO,C2H5; C6H13COO,C2H5O)

Crystallography Reports - The structure and thermal properties of azobenzene derivatives R1–C6H4–N=N–C6H4–R2, where R1/R2 = CH3COO/C2H5O (I), CH2=C(CH3)COO/C2H5 (II), or...     

Crystal Structure of Potentially Mesomorphic 4-Nonyloxyphenyl-4'-Metacryloyloxy-Benzoate CH2=C(CH3)–COO–C6H4–COO–C6H4–O–С9Н19

Crystallography Reports - The crystal structure of 4,4'-substituted phenyl benzoate CH2=C(CH3)–COO–C6H4–COO–C6H4–O–С9Н19 has been investigated by...     

Synthesis,Crystal Structure,and Characterization of New 2,4,5-Triphenyl Imidazole: 4,5-Diphenyl-2-(3,4,5-trimethoxyphenyl)-1H-imidazole

The substituted triarylimidazole, C₂₄H₂₂N₂O₃, was prepared from the three-component one-pot condensation reaction and the product was crystallized by using dimethylformamide. The structure of the compound was confirmed by elemental analysis, FT-IR, thermogravimetric analysis (TGA), UV-Visible and single-crystal X-ray diffraction. The compound crystallizes in the monoclinic crystal system in the space group P2₁/c with unit cell parameters a = 10.509(3) Å, b = 18.748(5) Å, c = 22.016(6) Å, β = 90.844(5)°, and Z = 8. The crystal structure of the compound was stabilized by the inter-molecular interactions of types N–H???N, C–H???O, and C–H???N, and intra-molecular interactions of the type C–H???O. The structure also involves C–H???π interactions.     

Production of Complex Hydrosulphates in the K3H(SO4)2–Rb3H(SO4)2 Series: Part I

Crystallography Reports - The phase equilibria in the K3H(SO4)2–Rb3H(SO4)2–H2O cross section have been investigated under isothermal conditions at 25°C. The concentration limits of...     

Characterization of a-B5C:H prepared by PECVD of orthocarborane: Results of preliminary FTIR and nuclear reaction analysis studies

The electronic properties of a-Si:H vary with hydrogen passivation of dangling bond defects. It appears this effect is also operative in semiconducting amorphous hydrogenated boron carbide (a-B₅C:H). Therefore, the ability to quantify the amount of hydrogen will be key to development of the materials science of a-B₅C:H. The results of an initial investigation probing the ability to quickly correlate hydrogen concentration in a-B₅C:H films with infrared spectroscopy are reported. a-B₅C:H thin films were growth on Si (1 1 1) substrates by plasma-enhanced chemical vapor deposition (PECVD) using sublimed orthocarborane and argon as the precursor gas. Nuclear reaction analysis (NRA) was performed to quantify the atomic concentration of H in the a-B₅C:H films. While the observed vibronic structure does not show stretches due to terminal C–H or bridging B–H–B, analysis of the terminal B–H stretch at ～2570 cm^?1 gives a proportionality constant of A = 2 × 10²² cm^?2. We conclude that the methods previously developed for correlating H concentration to infrared data in a-Si:H are similarly viable for a-B₅C:H films.     

Properties of n-type hydrogenated nanocrystalline cubic silicon carbide films deposited by VHF-PECVD at a low substrate temperature

n-Type hydrogenated nanocrystalline cubic silicon carbide (nc-3C–SiC:H) films have been deposited by very high-frequency plasma-enhanced chemical vapor deposition at a low substrate temperature of about 360 °C to apply this material to the window layer of heterojunction crystalline silicon (HJ-c-Si) solar cells. We investigated the effect of in situ doping on deposition rate, crystalline volume fraction and dark conductivity to optimize properties of the material. We also fabricated HJ-c-Si solar cells with a n-type nc-3C–SiC:H window layer. The solar cells shows high internal quantum efficiency of 0.90 at a wavelength of 400 nm, indicating that n-type nc-3C–SiC:H deposited by VHF-PECVD is a promising candidate of the window layer of HJ-c-Si solar cells.     

Synthesis and crystal structure characterization of (E)-2,2,2-Trifluoro-N-[2-(2-nitrovinyl)phenyl]acetamide

The title compound, (E)-2,2,2-trifluoro-N-[2-(2-nitrovinyl)phenyl]acetamide, was synthesized and characterized by ¹H and ¹³C NMR and HRMS spectroscopy. Its molecular configuration was investigated by X-ray crystallography. The crystal structure analysis revealed that the structure exhibits intermolecular hydrogen bonds of the type N–H…O and intermolecular hydrogen bonds of the type N–H…F, and molecules are linked by weak C–H…O contacts. Furthermore, the two oxygen atoms of nitro group are disordered over two positions, respectively, with site occupancy factors of 0.8:0.2 and 0.6:0.4. Three fluorine atoms are also disordered over two positions, respectively, one fluorine atom with site occupancy factors of 0.6:0.4 and the other two fluorine atoms with site occupancy factors of 0.5:0.5.     

Optical properties of microcrystalline 3C–SiC:H films measured by resonant photothermal bending spectroscopy

Optical absorption coefficient spectra of hydrogenated microcrystalline cubic silicon carbide (μc-3C–SiC:H) films prepared by Hot-Wire CVD method have been estimated for the first time by resonant photothermal bending spectroscopy (resonant-PBS). The optical bandgap energy and its temperature coefficient of μc-3C–SiC:H film is found to be about 2.2 eV and 2.3 × 10⁻⁴ eV K⁻¹, respectively. The absorption coefficient spectra of localized states, which are related to grain boundaries, do not change by exposure of air and thermal annealing. The localized state of μc-3C–SiC:H has different properties for impurity incorporation compared with that of hydrogenated microcrystalline silicon (μc-Si:H) film.     

Pyrolytic conversion studies of blended polycarbosilane and polyaluminasilazane

Multinuclear solid-state NMR spectroscopy, FTIR and Raman experiments are employed to investigate the pyrolytic conversion of blended polycarbosilane and polyaluminasilazane (denoted CA) up to 800 °C, with the aim of studying structural evolutions and interactions between polycarbosilane and polyaluminasilazane during the pyrolysis process. Vinyl and SiCH₃ units can react with Si–H, SiCH₃ and Si–CH₂–Si groups below 400 °C. These crosslinking reactions can increase the ceramic yield of the blended precursors. At 500 °C aromatic carbon is formed, and N–H and Si–H groups vanish at 600 °C and 700 °C, respectively. At 600 °C, SiCH₃ and Si–H units can further react with SiCN₃, SiC₂N₂, N–H and C–H units. An amount of amorphous carbon and CSi₄ and CSi₃H groups are detectable at 800 °C. Even at this temperature there are still many aromatic protons. In addition, there are also SiC₄, SiC₃N, SiCN₃ and SiN₄ units. Silicon forms SiN₄ more readily than SiC₄. Many AlN₅ groups transform into AlN₆ groups. The D and G bands of graphite are observed in CA pyrolyzed at 1400 °C. According to the XRD patterns, the reflection of crystalline β-Si₃N₄ vanishes at 1700 °C, and the residue pyrolyzed at 1800 °C mainly contains a large number of 2H-SiC/AlN solid solution crystals and a few β-SiC crystals.     

Synthesis,X-Ray Crystallography,Theoretical Investigation and Optical Properties of 2-Chloro-N-(2,4-dinitrophenyl) Acetamide

Journal of Chemical Crystallography - 2-Chloro-N-(2,4-dinitrophenyl) acetamide, 1, was synthesized and characterized by 1H and 13C NMR spectroscopy, ESI–MS, X-ray crystallography, and...     

Production of Complex Hydrosulphates in the K3H(SO4)2–Rb3H(SO4)2 Series: II. Phase Equilibria in the K2SO4–Rb2SO4–H2SO4–H2O System

Crystallography Reports - The phase equilibria in the K2SO4–Rb2SO4–H2SO4–H2O system have been investigated under isothermal conditions at 25°C. The concentration limits of...     

Structure and properties of hydrogenated amorphous silicon carbide thin films deposited by PECVD

a-Si_1?xC_x:H films are deposited by RF plasma enhanced chemical vapor deposition (PECVD) at different RF powers with hydrogen-diluted silane and methane mixture as reactive gases. The structure and properties of the thin films are measured by infrared spectroscope (IR), Raman scattering spectroscope and ultra violet–visible transmission spectroscope (UV–vis), respectively. Results show that the optical band gap of the a-Si_1?xC_x:H thin films increases with increasing Si–C bond fraction. It can be easily controlled through controlling Si–C bond formed by modulating deposition power. At low deposition power, the bond configuration of the a-Si_1?xC_x:H thin film is more disordered owing to the distinct different bond lengths and bond strengths between Si and C atoms. At a too high deposition power, it becomes still high disordered due to dangling bonds appearing in the a-Si_1?xC_x:H thin film. The low disordered bond configuration appears in the thin film deposited with moderate deposition power density of about 2.5 W/cm².     

Single Crystal,DFT and Docking Studies of a Benzimidazolium Salt

Crystallography Reports - A single-crystal of (C18H18N3)+Br–, namely, 3-[(2-cyanophenyl)methyl]-1-propyl-1H-benzo[d]imidazol-3-ium bromide, was studied using X-ray diffraction techniques....     

FT‐IR spectroscopic and thermal studies on pure and impurity added calcium tartrate tetrahydrate crystals

Pure and impurity (strontium) added calcium tartrate tetrahydrate single crystals were grown by the gel method. The FT‐IR spectra of these crystals were recorded in the wavenumber range 400–4000 cm^–1. The thermograms of the grown crystals were recorded in the temperature range 50–900 °C. FT‐IR spectra reveals the presence of water molecules, O‐H bond, C‐O and carbonyl C=O bonds. The thermograms show that these crystals are thermally unstable and decompose into its oxide through many stages. DTA curve of the pure crystal shows three endothermic and one exothermic peaks. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Study of the morphological change of amorphous ITO films after temperature–humidity treatment

Amorphous indium tin oxide (ITO) thin films have been deposited on silicon and Corning 7059 glass substrates at room temperature (RT) and at 75 °C by direct-current magnetron sputtering method. After exposure of the two kinds of samples to the temperature–humidity (T–H) test, we find that there are two different types of circular structures are formed. RT ITO films are composed of granules, and 75 °C ITO films are composed of several different parts which have different Sn and In concentrations. Metallic ion concentration corrosion cells are used to explain the phenomena.     

Synthesis and X‐ray structure of two conformational isomers of [Zn(medpt)(SCN)2], medpt = bis (3 – aminopropyl)methylamine

Two conformational isomers of [Zn (medpt)(NCS)₂], medpt=bis(3‐aminopropyl) methylamine, (1) and (2) have been synthesised and the crystal structures are determined using single crystal X‐ray diffraction. The structures of the complexes have been solved by Patterson method and refined by full‐matrix least‐ squares techniques to R1 = 0.0524 for (1) and R1 = 0.0506 for (2), respectively. The geometry around the Zn(II) centre in both isomers is distorted trigonal bipyramidal. The two pendent thiocyanate moieties in (1), with Zn–N–C angles 167.9(4)–173.9(4)º, coordinate the mental centre almost linearly while the corresponding coordinations in (2) are significantly bent [Zn–N–C angles 150.8(3)–153.1(2)°]. Intermolecular N–H…S hydrogen bonds stabilise the crystal packing in the complexes forming infinite chains parallel to the [100] direction. The combinations of molecular chains generate three/two dimensional supramolecular framework in complexes (1) and (2). (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Crystal growth,characterization and Density functional theory computations of supramolecular N‐carbamothioyl acetamide

Single crystals of N‐carbamothioylacetamide (NCTA) were grown by slow evaporation technique at constant temperature. The structure is elucidated by single crystal XRD analysis. The studies reveal that the molecule is associated with accommodating weak C–O···H, N–H···O, N–H···S, C–H···N, C···C and H···H stacking interactions which are responsible for the formation and strengthening of supramolecular assembly. Inter‐ and intramolecular hydrogen bonding interactions exhibit supramolecular architecture in the crystal packing. Two different types of architecture, i.e., a column like packing, and cluster network type of infrastructure are observed. Hirshfeld surfaces and Fingerprint plots were used to locate and analyze the percentage of hydrogen bonding interactions. The various functional groups present in the molecule are confirmed by FT‐IR analysis. Density functional theory computations of the vibrational spectrum, molecular geometry, HOMO‐LUMO energy gaps, NBO and hyperpolarizability (β) were successfully evaluated. Facts concerning with the size, shape, charge density distribution and site of chemical reactivity of the molecule have been obtained by mapping electron density with electrostatic potential (ESP).     

Effect of vacuum annealing on charge transport and trapping in a-Si1 − xCx:H/c-Si heterostructures

The processes of charge transport and trapping in amorphous Si_1 ? xC_x:H films deposited on crystalline p-type Si wafers and annealed in vacuum in the temperature range 300–650 °C have been evaluated. Current–voltage (I–V), capacitance–voltage (C–V) and admittance–temperature (G–T) characteristics were measured in the temperature range 100–350 K. The spectrum of thermal effusion of hydrogen was measured from room temperature up to 1000 °C.C–V characteristics indicate a slight increase of the dielectric constant k and a large hysteresis after annealing at 450 °C. The hysteresis is believed to be associated with mobile hydrogen effusion from the a-SiC:H film, and it is not seen after a 650 °C anneal. From I–V data the maximum rectification ratio is observed after annealing at 450 °C. Variable-range hopping (VRH) conduction at the Fermi level is found to dominate the forward current of the as-deposited structure. After annealing at 450 °C the forward current can be described by space-charge limited (SCL) mechanisms with trapping at shallow levels with energy of about 0.12 eV. After annealing at 650 °C the process of VRH conduction appears again, but the density of hopping sites is much higher than in the as-grown sample. From admittance spectra, the energy position of respective traps in a-SiC:H is at (E_V + 0.45) eV for as-deposited material and it decreases slightly after vacuum annealing. On the basis of these results, an energy band diagram of the a-Si_1 ? xC_x:H/p-Si structure annealed at 450 °C is proposed.