铜晶体中类层错四面体的结构及其演化

运用分子动力学方法,研究了金属铜单晶中不同形状的Frank位错环演化形成的各种类层错四面体稳定构型.对其形成过程的细致分析表明,这些稳定构型都可以用统一的位错分解和位错反应过程来解释.模拟结果表明,在零温下各种Frank位错环存在各自的临界尺寸,小于临界尺寸的Frank位错环不能长成类层错四面体结构.对梯形、六边形等Frank位错环演化过程的模拟表明,在形成稳定类层错四面体的过程中,存在位错生长和回缩的振荡现象.振荡现象是由于位错间的排斥和吸引相互作用不同步或弹性波传播的延迟效应引起的. 关键词： 层错四面体 位错 分子动力学     

强流脉冲电子束辐照下单晶铝中的堆垛层错四面体

利用强流脉冲电子束技术对单晶铝进行了辐照，并利用透射电镜对强流脉冲电子束诱发的空位簇缺陷进行分析.实验结果表明，强流脉冲电子束能够诱发位错圈、孔洞甚至堆垛层错四面体这种通常在高层错能金属中不能形成的空位簇缺陷，并且三种不同类型的空位簇缺陷的形核过程并不同时发生，三种空位簇缺陷存在着密切的关系.根据实验结果提出了堆垛层错四面体形成与生长机理.     

强流脉冲电子束辐照下单晶铝中的堆垛层错四面体

利用强流脉冲电子束技术对单晶铝进行了辐照,并利用透射电镜对强流脉冲电子束诱发的空位簇缺陷进行分析.实验结果表明,强流脉冲电子束能够诱发位错圈、孔洞甚至堆垛层错四面体这种通常在高层错能金属中不能形成的空位簇缺陷,并且三种不同类型的空位簇缺陷的形核过程并不同时发生,三种空位簇缺陷存在着密切的关系.根据实验结果提出了堆垛层错四面体形成与生长机理. 关键词： 强流脉冲电子束 堆垛层错四面体 单晶铝 空位簇缺陷     

单晶铜在动态加载下空洞增长的分子动力学研究

冲击载荷下延性材料的损伤是材料中微空洞的产生和长大演化的结果.利用分子动力学模拟 方法对延性金属单晶铜中单个空洞在动态加载下的演化发展进行了研究，得到了空洞增长过 程中的应力分布及空洞增长演化随冲击强度变化的规律.模拟结果表明，动态加载下的前期 压缩过程对后期拉伸应力场作用下的空洞增长演化特征有不可忽视的影响，微空洞增长的阈 值则与单晶实验中层裂强度随拉伸应力作用时间减少而增加的趋势相一致. 关键词： 层裂 分子动力学 动态加载 空洞     

超短激光诱导金属薄膜后向层裂的分子动力学模拟

 采用结合双温模型的分子动力学方法详尽描述了应力约束区域内部金属薄膜后向层裂的动力学过程。与辐照表面在激光加热作用下机械稳定性受到强烈影响而发生的前向喷射不同，后向层裂是冷材料的断裂。分析了层裂机制，得出靶材是在卸载波及被反射的压力波的共同作用下发生层裂;探讨了激光诱导压力波的传播规律，预测了不同靶厚下的层裂厚度及其对层裂开始时间的影响。     

堆垛层错和温度对纳米多晶镁变形机理的影响

本文采用分子动力学模拟方法研究了在拉伸载荷下,堆垛层错和温度对纳米多晶镁力学性能的影响,在模拟中,采用嵌入原子势描述镁原子之间的相互作用．计算结果表明：在纳米晶粒中引入堆垛层错能明显增强纳米多晶镁的屈服应力,但堆垛层错对纳米多晶镁杨氏模量的影响很小;温度为300．0K时,孪晶在晶粒交界附近形成,孪晶随着拉伸应变的增加而逐渐生长．当拉伸应变达到0．087时,一种基面与X—Y面成大约35°角且内部包含堆垛层错的新晶粒成核并快速增长．也就是说,孪晶和新晶粒的形成和繁殖是含堆垛层错的纳米多晶镁在300．0K温度下的主要变形机理．模拟结果也显示,当温度为10．0K时,位错的成核和滑移是含堆垛层错的纳米多晶镁拉伸变形的主要形式．     

晶粒尺度对延性金属材料层裂损伤的影响

微细观结构对材料动态损伤、破坏的影响是目前国内外力学领域的研究热点之一. 基于相关文献的实验结果, 通过理论分析, 给出了一个新的反映晶粒尺度效应的孔洞成核模型, 并将其耦合到延性金属材料层裂损伤模型中. 采用数值方法分析了晶粒尺度对高纯铜材料层裂损伤演化过程的影响. 计算结果显示: 随着材料平均晶粒尺度的增加, 自由面速度回跳点降低, 回跳后速度曲线的斜率增加; 损伤材料内部的孔洞数减少、平均孔洞尺寸增大.计算结果与相关文献所报道的实验 分析结果定性上符合较好. 该结果对于层裂损伤的深入研究具有一定的启发性. 关键词： 层裂 晶粒尺度 延性金属材料 冲击     

超短激光诱导金属薄膜后向层裂的分子动力学模拟(英文)

采用结合双温模型的分子动力学方法详尽描述了应力约束区域内部金属薄膜后向层裂的动力学过程。与辐照表面在激光加热作用下机械稳定性受到强烈影响而发生的前向喷射不同,后向层裂是冷材料的断裂。分析了层裂机制,得出靶材是在卸载波及被反射的压力波的共同作用下发生层裂;探讨了激光诱导压力波的传播规律,预测了不同靶厚下的层裂厚度及其对层裂开始时间的影响。     

纳米铜薄膜塑性变形中空位型缺陷形核与演化的分子动力学研究

本文采用分子动力学方法模拟了纳米单晶铜薄膜在单向拉伸载荷作用下的塑性变形过程, 重点分析了空位型缺陷的形核过程和演化机理. 在模拟过程中, 采用镶嵌原子势描述原子间的相互作用. 模拟结果表明纳米铜薄膜中塑性变形起源于位错的表面形核, 而空位型缺陷的形核及演化都与晶体内部的位错运动密切相关. 空位型缺陷通常从位错割阶及层错交截处开始形核, 以单空位、层错四面体和不规则空位团等形式存在. 关键词： 纳米薄膜 塑性变形 空位 层错四面体     

氮化硅陶瓷层裂强度的研究

 用一级轻气炮冲击加载装置，对氮化硅陶瓷进行了冲击性能实验研究。发展了一种新的方法用于研究层裂特性，即通过在样品中埋设电磁粒子速度计来记录氮化硅陶瓷内部的层裂特性。该方法不同于常用的VISAR激光干涉法和锰铜计法，记录的是样品内部粒子速度的变化特征，位于层裂面后方的粒子速度计能清晰地表征材料的层裂特性。通过实验，得到了密度为3.12 g/cm³的氮化硅陶瓷的层裂强度为0.73 GPa，和Nahme等得到的强度较为接近，对称碰撞得到的裂片厚度与该次实验的飞片厚度相当。实验表明，电磁粒子速度计的方法可以用于研究非磁屏蔽材料的层裂特性。由于采用多个计进行记录，还得到了材料在弹性区内（1.8~3.6 GPa）的Hugoniot冲击绝热线。     

Molecular dynamics simulation of the interaction between a mixed dislocation and a stacking fault tetrahedron

A high number-density of nanometer-sized stacking fault tetrahedra are commonly found during irradiation of low stacking fault energy metals. The stacking fault tetrahedra act as obstacles to dislocation motion leading to increased yield strength and decreased ductility. Thus, an improved understanding of the interaction between gliding dislocations and stacking fault tetrahedra are critical to reliably predict the mechanical properties of irradiated materials. Many studies have investigated the interaction of a screw or edge dislocation with a stacking fault tetrahedron (SFT). However, atomistic studies of a mixed dislocation interaction with an SFT are not available, even though mixed dislocations are the most common. In this paper, molecular dynamics simulation results of the interaction between a mixed dislocation and an SFT in face-centered cubic copper are presented. The interaction results in shearing, partial absorption, destabilization or simple bypass of the SFT, depending on the interaction geometry. However, the SFT was not completely annihilated, absorbed or collapsed during a single interaction with a mixed dislocation. These observations, combined with simulation results of edge or screw dislocations, suggest that defect-free channel formation in irradiated copper is not likely by a single dislocation sweeping or destruction process, but rather by a complex mix of multiple shearing, partial absorption and defect cluster transportation that ultimately reduces the size of stacking fault tetrahedra within a localized region.     

Effects of stacking fault energy on defect formation process in face-centered cubic metals

To elucidate the effect of stacking fault energies (SFEs) on defect formation by the collision cascade process for face-centred cubic metals, we used six sets of interatomic potentials with different SFEs while keeping the other properties almost identical. Molecular dynamic simulations of the collision cascade were carried out using these potentials with primary knock-on atom energies (E_PKA) of 10 and 20 keV at 100 K. Neither the number of residual defects nor the size distributions for both self-interstitial atom (SIA) type and vacancy type clusters were affected by the difference in the SFE. In the case of E_PKA = 20 keV, the ratio of glissile SIA clusters increased as the SFE decreased, which was not expected by a prediction based on the classical dislocation theory. The trend did not change after annealing at 1100 K for 100 ps. For vacancy clusters, few stacking fault tetrahedrons (SFTs) formed before the annealing. However, lower SFEs tended to increase the SFT fraction after the annealing, where large vacancy clusters formed at considerable densities. The findings of this study can be used to characterise the defect formation process in low SFE metals such as austenitic stainless steels.     

Generalized stacking fault energy surfaces in the molecular crystal αRDX

The generalized stacking fault (GSF) energy surfaces in the organic energetic molecular crystal, hexahydro-1,3,5-trinitro-s-triazine (RDX), were studied through atomistic simulations. Using a fully flexible molecular potential in highly damped molecular dynamics simulations, we determined quenched 0?K GSF energy surfaces and structures for a set of planes in the α-polymorph RDX crystal and subsequently compare predictions of slip or cleavage with available experimental observations. To account for the steric contributions and elastic shearing due to the presence of flexible molecules, a modified calculation procedure for the GSF energy surface is proposed that enables the distinction of elastic shear energy from the energy associated with the interfacial displacement discontinuity at the slip plane. Comparisons of the unstable stacking fault energy with the surface energy are used to differentiate cleavage planes from likely slip planes, and the calculations are found to be largely in agreement with available experimental data.     

Effects of stacking fault energies on formation of irradiation-induced defects at various temperatures in face-centred cubic metals

ABSTRACT

By using the six sets of interatomic potentials for face-centred cubic metals that differ in the stacking fault energy (SFE) while most of the other material parameters are kept almost identical, we conducted molecular dynamics simulations to evaluate the effects of SFE on the defect formation process through collision cascades. The simulations were performed at 100, 300 and 600?K, with a primary knock-on atom energy of 50 keV. The number of residual defects is not dependent on the SFE at all the temperatures. For clusters of self-interstitial atoms (SIAs), their clustering behaviour does not depend on the SFE, either. However, the ratio of glissile SIA clusters tends to decrease with increasing SFE. This is because perfect loops, the edges of which split into two partial dislocations with stacking fault structures between them in most cases, prefer to form at lower SFEs. The enhanced formation of glissile SIA clusters at lower SFEs can also be observed even at increased temperature. Because most large vacancy clusters have stacking fault structures, they preferentially form at lower SFE; however, it is observed only at the lowest temperature, where the mean size increases with decreasing SFE. At higher temperatures, because of their extremely low number density, the vacancy clustering behaviour does not depend on the SFEs.     

Atomistic simulation of the stacking fault energy and grain shape on strain hardening behaviours of FCC nanocrystalline metals

ABSTRACT

Ultra-fine grained copper with nanotwins is found to be both strong and ductile. It is expected that nanocrystalline metals with lamella grains will have strain hardening behaviour. The main unsolved issues on strain hardening behaviour of nanocrystalline metals include the effect of stacking fault energy, grain shape, temperature, strain rate, second phase particles, alloy elements, etc. Strain hardening makes strong nanocrystalline metals ductile. The stacking fault energy effects on the strain hardening behaviour are studied by molecular dynamics simulation to investigate the uniaxial tensile deformation of the layer-grained and equiaxed models for metallic materials at 300?K. The results show that the strain hardening is observed during the plastic deformation of the layer-grained models, while strain softening is found in the equiaxed models. The strain hardening index values of the layer-grained models decrease with the decrease of stacking fault energy, which is attributed to the distinct stacking fault width and dislocation density. Forest dislocations are observed in the layer-grained models due to the high dislocation density. The formation of sessile dislocations, such as Lomer–Cottrell dislocation locks and stair-rod dislocations, causes the strain hardening behaviour. The dislocation density in layer-grained models is higher than that in the equiaxed models. Grain morphology affects dislocation density by influencing the dislocation motion distance in grain interior.     

A dislocation dynamics study of the strength of stacking fault tetrahedra. Part II: interactions with mixed and edge dislocations

In this paper we present the sequel to Part I and present a comprehensive dislocation dynamics study of the strength of stacking fault tetrahedra to mixed and edge dislocation glides in fcc Cu.     

Assessment of the thermodynamic dimension of the stacking fault energy

Especially with respect to high Mn and other austenitic TRansformation and/or TWinning Induced Plasticity (TRIP/TWIP) steels, it is a current trend to model the stacking fault energy of a stacking fault that is formed by plastic deformation with an equilibrium thermodynamic formalism as proposed by Olson and Cohen in 1976. In the present paper, this formalism is critically discussed and its ambiguity is stressed. Suggestions are made, how the stacking fault energy and its relation to the formation of hexagonal ?-martensite might be treated appropriately. It is further emphasized that a thermodynamic treatment of deformation-induced stacking fault phenomena always faces some ambiguity. However, an alternative thermodynamic approach to stacking faults, twinning and the formation of ?-martensite in austenitic steels might rationalize the specific stacking fault arrangements encountered during deformation of TRIP/TWIP alloys.