Calculation and analysis of the number of return photons from sodium laser beacon excited by the long pulse laser with circular polarization

The number of return photons from sodium laser beacon（SLB） greatly suffers down-pumping, recoil, and geomagnetic field when the long pulse laser with circular polarization interacts with sodium atoms in the mesosphere. Considering recoil and down-pumping effects on the number of return photons from SLB, the spontaneous radiation rates are obtained by numerical computations and fittings. Furthermore, combining with the geomagnetic field effects, a new expression is achieved for calculating the number of return photons. By using this expression and considering the stochastic distribution of laser intensity in the mesosphere under different turbulence models for atmosphere, the number of return photons excited by the narrow-band single mode laser and that by the narrow-band three-mode laser are respectively calculated. The results show that the narrow-band three-mode laser with a specific spectrum structure has a higher spontaneous radiation rate and more return photons than a narrow-band single mode laser. Of note, the effect of the atmospheric turbulence on the number of return photons is remarkable. Calculation results indicate that the number of return photons under the HV5/7 model for atmospheric turbulence is much higher than that under the Greenwood and Mod HV models.     

Effect of electromagnetic disturbance on the practical QKD system in the smart grid

To improve the security of the smart grid, quantum key distribution（QKD） is an excellent choice. The rapid fluctuations on the power aerial optical cable and electromagnetic disturbance in substations are two main challenges for implementation of QKD. Due to insensitivity to birefringence of the channel, the stable phase-coding Faraday–Michelson QKD system is very practical in the smart grid. However, the electromagnetic disturbance in substations on this practical QKD system should be considered. The disturbance might change the rotation angle of the Faraday mirror, and would introduce an additional quantum bit error rate（QBER）. We derive the new fringe visibility of the system and the additional QBER from the electromagnetic disturbance. In the worst case, the average additional QBER only increases about 0.17% due to the disturbance, which is relatively small to normal QBER values. We also find the way to degrade the electromagnetic disturbance on the QKD system.     

A spherical higher-order finite-difference time-domain algorithm with perfectly matched layer

A higher-order finite-difference time-domain（HO-FDTD） in the spherical coordinate is presented in this paper. The stability and dispersion properties of the proposed scheme are investigated and an air-filled spherical resonator is modeled in order to demonstrate the advantage of this scheme over the finite-difference time-domain（FDTD） and the multiresolution time-domain（MRTD） schemes with respect to memory requirements and CPU time. Moreover, the Berenger＇s perfectly matched layer（PML） is derived for the spherical HO-FDTD grids, and the numerical results validate the efficiency of the PML.     

Exact Solutions and Invariant Sets to General Reaction-Diffusion Equation

In this paper, we introduce new invariant sets, and the invariant sets and exact solutions to general reactiondiffusion equation are discussed. It is shown that there exist a class of exact solutions to the equations that belong to the invariant sets.     

Effects of N doping on photoelectric properties of along different directions of ZnO bulk and nanotube

The electronic structures and optical properties of N-doped Zn O bulks and nanotubes are investigated using the firstprinciples density functional method. The calculated results show that the main optical parameters of Zn O bulks are isotropic（especially in the high frequency region）, while Zn O nanotubes exhibit anisotropic optical properties. N doping results show that Zn O bulks and nanotubes present more obvious anisotropies in the low-frequency region. Thereinto, the optical parameters of N-doped Zn O bulks along the [100] direction are greater than those along the [001] direction, while for N-doped nanotubes, the variable quantities of optical parameters along the [100] direction are less than those along the[001] direction. In addition, refractive indexes, electrical conductivities, dielectric constants, and absorption coefficients of Zn O bulks and nanotubes each contain an obvious spectral band in the deep ultraviolet（UV）（100 nm～ 300 nm）. For each of N-doped Zn O bulks and nanotubes, a spectral peak appears in the UV and visible light region, showing that N doping can broaden the application scope of the optical properties of Zn O.     

Relativistic effect of pseudospin symmetry and tensor coupling on the Mie-type potential via Laplace transformation method

A relativistic Mie-type potential for spin-1/2 particles is studied. The Dirac Hamiltonian contains a scalar S（r） and a vector V（r） Mie-type potential in the radial coordinates, as well as a tensor potential U（r） in the form of Coulomb potential. In the pseudospin（p-spin） symmetry setting Σ = Cps and Δ = V（r）, an analytical solution for exact bound states of the corresponding Dirac equation is found. The eigenenergies and normalized wave functions are presented and particular cases are discussed with any arbitrary spin–orbit coupling number κ. Special attention is devoted to the caseΣ = 0 for which p-spin symmetry is exact. The Laplace transform approach（LTA） is used in our calculations. Some numerical results are obtained and compared with those of other methods.     

A New Type of Conserved Quantity Deduced from Mei Symmetry for Relativistic Mechanical System in Phase Space

In this paper, a new type of conserved quantity indirectly deduced from the Mei symmetry for relativistic mechanical system in phase space is studied. The definition and the criterion of the Mei symmetry for the system are given. The condition for existence and the form of the new conserved quantity are obtained. Finally, an example is given to illustrate the application of the results.     

Phase field modeling of the ring-banded spherulites of crystalline polymers: The role of thermal diffusion

The ring-banded spherulite is a special morphology of polymer crystals and has attracted considerable attention over recent decades. In this study, a new phase field model with polymer characteristics is established to investigate the emergence and formation mechanism of the ring-banded spherulites of crystalline polymers. The model consists of a nonconserved phase field representing the phase transition and a temperature field describing the diffusion of the released latent heat. The corresponding model parameters can be obtained from experimentally accessible material parameters.Two-dimensional calculations are carried out for the ring-banded spherulitic growth of polyethylene film under a series of crystallization temperatures. The results of these calculations demonstrate that the formation of ring-banded spherulites can be triggered by the self-generated thermal field. Moreover, some temperature-dependent characteristics of the ring-banded spherulites observed in experiments are reproduced by simulations, which may help to study the effects of crystallization temperature on the ring-banded structures.     

Pump-induced carrier envelope offset frequency dynamics and stabilization of an Yb-doped fiber frequency comb

In this paper, we demonstrate a carrier envelope phase-stabilized Yb-doped fiber frequency comb seeding by a nonlinear-polarization-evolution（NPE） mode-locked laser at a repetition rate of 60 MHz with a pulse duration of 191 fs.The pump-induced carrier envelope offset frequency（ f0） nonlinear tuning is discussed and further explained by the spectrum shift of the laser pulse. Through the environmental noise suppression, the drift of the free-running f0 is reduced down to less than 3 MHz within an hour. By feedback control on the pump power with a self-made phase-lock loop（PLL）electronics the carrier envelope offset frequency is well phase-locked with a frequency jitter of 85 m Hz within an hour.     

Radio-frequency compressed electron pulse-width characterization by cross-correlation between electron bunches and laser-induced plasma

A method is proposed to determine the temporal width of high-brightness radio-frequency compressed electron pulses based on cross-correlation technique involving electron bunches and laser-induced plasma. The temporal evolution of 2-dimensional transverse profile of ultrafast electron bunches repelled by the formed transient electric field of laser-induced plasma on a silver needle is investigated, and the pulse-width can be obtained by analyzing these time-dependent images.This approach can characterize radio-frequency compressed ultrafast electron bunches with picosecond or sub-picosecond timescale and up to 105 electron numbers.     

Defect characterization and magnetic properties in un-doped ZnO thin film annealed in a strong magnetic field

Highly c-axis oriented un-doped zinc oxide（Zn O） thin films, each with a thickness of ～ 100 nm, are deposited on Si（001） substrates by pulsed electron beam deposition at a temperature of ～ 320℃, followed by annealing at 650℃ in argon in a strong magnetic field. X-ray photoelectron spectroscopy（XPS）, positron annihilation analysis（PAS）, and electron paramagnetic resonance（EPR） characterizations suggest that the major defects generated in these Zn O films are oxygen vacancies. Photoluminescence（PL） and magnetic property measurements indicate that the room-temperature ferromagnetism in the un-doped Zn O film originates from the singly ionized oxygen vacancies whose number depends on the strength of the magnetic field applied in the thermal annealing process. The effects of the magnetic field on the defect generation in the Zn O films are also discussed.     

Gate-modulated generation–recombination current in n-type metal–oxide–semiconductor field-effect transistor

Gate-modulated generation–recombination（GMGR） current IGMGRinduced by the interface traps in an n-type metal–oxide–semiconductor field-effect transistor（n MOSFET） is investigated. The generation current is found to expand rightwards with increasing the reversed drain PN junction bias, and the recombination current is enhanced as the forward drain bias increases. The variations of IGMGRcurves are ascribed to the changes of the electron density and hole density at the interface, NSand PS, under the different drain bias voltages. Based on an analysis of the physical mechanism, the IGMGR model is set up by introducing two coefficients（m and t）. The coefficients m and t can modulate the curves widths and peak values. The simulated results under reverse mode and forward mode are obviously in agreement with the experimental results. This proves that this model can be applicable for generation current and recombination current and that the theory behind the model is reasonable. The details of the relevant mechanism are given in the paper.     

Perturbation to Mei Symmetry and Noether Adiabatic Invariants for Birkhoffian Systems

Based on the concept of adiabatic invariant, the perturbation to Mei symmetry and Noether adiabatic invariants for Birkhoffian systems are studied. The exact invariants of Mei symmetry for the system without perturbation are given. The perturbation to Mei symmetry is discussed and the Noether adiabatic invariants induced from the perturbation to Mei symmetry of the system are obtained.     

Embedded-Soliton and Complex Wave Excitations of （3＋1）-Dimensional Burgers System

Starting from the extended mapping approach and a linear variable separation method, we find new families of variable separation solutions with some arbitrary functions for the （3＋1）-dimensionM Burgers system. Then based on the derived exact solutions, some novel and interesting localized coherent excitations such as embedded-solitons, taper-like soliton, complex wave excitations in the periodic wave background are revealed by introducing appropriate boundary conditions and/or initial qualifications. The evolutional properties of the complex wave excitations are briefly investigated.     

The effect of cellular aging on the dynamics of spiral waves

Cellular aging can result in deterioration of electrical coupling, the extension of the action potential duration, and lower excitability of the cell. Those factors are introduced into the Greenberg–Hastings cellular automaton model and the effects of the cellular aging on the dynamics of spiral waves are studied. The numerical results show that a 50% reduction of the coupling strength of aging cells has a little influence on spiral waves. If the coupling strength of aging cells equals zero, the ability for the medium to maintain spiral waves will be reduced by approximately 50% when the aging cell ratio increases from 0 to 0.5, where the reduction of cell excitability plays a major role in inducing disappearance of spiral waves. When the relevant parameters are properly chosen, the cellular aging can lead to the meandering of spiral waves,the emergence of the binary spiral waves, and even the disappearance of spiral waves via the stopping rotation or shrinkage of wave. Physical mechanisms of the above phenomena are analyzed briefly.     

Bipolar tri-state resistive switching characteristics in Ti/CeO_x/Pt memory device

Highly repeatable multilevel bipolar resistive switching in Ti/Ce Ox/Pt nonvolatile memory device has been demonstrated. X-ray diffraction studies of Ce O2 films reveal the formation of weak polycrystalline structure. The observed good memory performance, including stable cycling endurance and long data retention times（〉10^4s） with an acceptable resistance ratio（～10^2）, enables the device for its applications in future non-volatile resistive random access memories（RRAMs）. Based on the unique distribution characteristics of oxygen vacancies in Ce Ox films, the possible mechanism of multilevel resistive switching in Ce Ox RRAM devices has been discussed. The conduction mechanism in low resistance state is found to be Ohmic due to conductive filamentary paths, while that in the high resistance state was identified as Ohmic for low applied voltages and a space-charge-limited conduction dominated by Schottky emission at high applied voltages.     

Magneto-resistance and vortex phase diagram of BaNi_（0.1）Fe_（1.9）As_2 single crystal

The transition from vortex glass to a liquid phase is studied in Ba Ni0.1Fe1.9As2 single crystal with Tc = 19.4 K by magneto-resistance measurements. The resistivity curves are measured in magnetic fields in a range of 0 T–13 T for H‖c and H⊥c. Good scalings for all values of resistivity ρ（H, T） and the effective pinning potential U0（H, T） are obtained with the modified vortex glass theory by using the critical exponents s and H0. Phase diagrams for H‖c and H⊥c are determined based on the obtained vortex glass temperature Tg, the vortex dimensionality crossover temperature T＊, and the upper critical magnetic field Hc2. Our results suggest that both below and above 5 T, single vortex pinning co-exists with collective creep, and collective creep is dominant. There is a narrower vortex liquid region for H⊥c than for H‖c in the vortex phase diagram, which may originate from a stronger pinning force.     

Backscattering from small-scale breaking wave turbulence structure generated by FLUENT

A breaking wave can exert a great influence on the electromagnetic（EM） scattering result from sea surfaces. In this paper, the process of small-scale wave breaking is simulated by the commercial computational fluid dynamics（CFD）software FLUENT, and the backscattering radar cross section（RCS） of the turbulence structure after breaking is calculated with the method of moments. The scattering results can reflect the turbulent intensities of the wave profiles and can indicate high polarization ratios at moderate incident angles, which should be attributed to the incoherent backscatter from surface disturbance of turbulence structure. Compared with the wave profile before breaking, the turbulence structure has no obvious geometrical characteristic of a plunging breaker, and no sea spikes are present at large incident angles either.In summary, the study of EM scattering from turbulence structure can provide a basis to explain the anomalies of EM scattering from sea surfaces and help us understand the scattering mechanism about the breaking wave more completely.     

Interfacial potential approach for Ag/ZnO （0001） interfaces

Systematic approaches are presented to extract the interfacial potentials from the ab initio adhesive energy of the interface system by using the Chen–M ¨obius inversion method. We focus on the interface structure of the metal（111）/Zn O（0001）in this work. The interfacial potentials of Ag–Zn and Ag–O are obtained. These potentials can be used to solve some problems about Ag/Zn O interfacial structure. Three metastable interfacial structures are investigated in order to check these potentials. Using the interfacial potentials we study the procedure of interface fracture in the Ag/Zn O（0001） interface and discuss the change of the energy, stress, and atomic structures in tensile process. The result indicates that the exact misfit dislocation reduces the total energy and softens the fracture process. Meanwhile, the formation and mobility of the vacancy near the interface are observed.     

Afterpulsing characteristics of InGaAs/InP single photon avalanche diodes

In Ga As/In P single photon avalanche diodes（SPADs） are more and more available in many research fields. They are affected by afterpulsing which leads to a poor single photon detection probability. We present an In Ga As/In P avalanche photodiode with an active quenching circuit on an application specific integrated circuit（ASIC）. It can quench the avalanche rapidly and then reduce the afterpulse rate. Also this quenching circuit can operate in both free-running and gated modes.Furthermore, a new technique is introduced to characterize the influence of the higher order of afterpulses, which uses a program running on a field programmable gate array（FPGA） integrated circuit.