Photovoltaic performance and stability of CdTe/polymeric hybrid solar cells using a C60 buffer layer

The influence of C₆₀ as a buffer layer on photovoltaic performance and stability of bulk hetero-junction solar cells using a photoactive layer of CdTe nanocrystals and poly(p-phenylenevinylene) derivative has been investigated. The incident photon-to-current conversion efficiency of the sealed-cells with a C₆₀ buffer layer was about 70% of that of solar cells using a buffer layer of LiF. The introduction of C₆₀ buffer layer gave an improvement in the stability for a light-harvesting test. In a long-term thermal stability test, there was no difference between the solar cells using C₆₀ and LiF. An impedance analysis suggested that the degradation of the performance in the stability tests was associated with a decrease in the conductance of the cells.     

MoO2 synthesized by reduction of MoO3 with ethanol vapor as an anode material with good rate capability for the lithium ion battery

MoO₂ synthesized through reduction of MoO₃ with ethanol vapor at 400 °C was characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Its electrochemical performance as an anode material for lithium ion battery was tested by cyclic voltammetry (CV) and capacity measurements. During the reduction process, the starting material (MoO₃) collapsed into nanoparticles (∼100 nm), on the nanoparticles remains a carbon layer from ethanol decomposition. Rate capacity and cycling performance of the as-prepared product is very satisfactory. It displays 318 mAh g⁻¹ in the initial charge process with capacity retention of 100% after 20 cycles in the range of 0.01–3.00 V vs. lithium metal at a current density of 5.0 mA cm⁻², and around 85% of the retrievable capacity is in the range of 1.00–2.00 V. This suggests the application of this type of MoO₂ as anode material in lithium ion batteries.     

MoO3 nanorods/Fe2(MoO4)3 nanoparticles composite anode for solid oxide fuel cells

MoO₃ nanorods/Fe₂(MoO₄)₃ nanoparticles composite has been prepared by a hydrothermal method combined with an in situ diffusion growth process. Single cells based on 300 μm LSGM electrolyte have been fabricated with the MoO₃ nanorods/Fe₂(MoO₄)₃ nanoparticles composite anode and a composite cathode consisting of Sr_0.9Ce_0.1CoO_3−δ and Sm-doped ceria (SDC). The peak power densities reach 225, 50, 75 mW cm⁻² at 900 °C in H₂, CH₄ and C₃H₈, respectively. The cell shows excellent long-term stability at 850 °C. The preliminary results demonstrate that the MoO₃ nanorods/Fe₂(MoO₄)₃ nanoparticles composite is a promising alternative anode for solid oxide fuel cells.     

Improved performance of Cu(InGa)Se2 thin-film solar cells using evaporated Cd-free buffer layers

Polycrystalline Cu(InGa)Se₂ (CIGS) thin-film solar cells using evaporated In_xSe_y and ZnIn_xSe_y buffer layers are prepared. The purpose of this work is to replace the chemical bath deposited CdS buffer layer with a continuously evaporated buffer layer. In this study, a major effort is made to improve the performance of CIGS thin-film solar cells with these buffer layers. The relationship between the cell performance and the substrate temperature for these buffer layers is demonstrated. Even at the high substrate temperature of about 550°C for the buffer layer, efficiencies of more than 11% were obtained. Furthermore, the I−V characteristics of the cells using these buffer layers are compared with cells using CdS buffer layers fabricated by chemical bath deposition method. We have achieved relatively high efficiencies of over 15% using both the ZnIn_xSe_y and the CdS buffer layers.     

Nano-sized Ag-inserted amorphous ZnSnO3 multilayer electrodes for cost-efficient inverted organic solar cells

A sheet resistance- and optical transmittance-tunable amorphous ZnSnO₃ (ZTO) multilayer electrode created through the insertion of a nano-scale Ag layer is demonstrated as an indium-free transparent conducting electrode for cost-efficient inverted organic solar cells (IOSCs). Due to the antireflection effect, the ZTO/Ag/ZTO/glass exhibited a high transmittance of 86.29% in the absorption wavelength region of the organic active layer and a low resistivity of 3.24×10⁻⁵ Ω cm, even though the ZTO/Ag/ZTO electrode was prepared at room temperature. The metallic conductivity of the electrode indicates that its electrical conductivity is dominated by the nano-scale Ag metal layer. In addition, optimization and control of the thickness of the nano-scale Ag layer are important in obtaining highly transparent ZTO/Ag/ZTO electrodes, because antireflection is strongly influenced by Ag thickness. Moreover, IOSCs fabricated on optimized ZTO/Ag/ZTO electrodes with Ag thicknesses of 12 nm showed power conversion efficiencies (2.55%) comparable to that of an IOSC prepared on a crystalline ITO electrode (2.45%), due to the low sheet resistance and high optical transmittance in the range of 400-600 nm. The performances of ZTO/Ag/ZTO multilayer electrodes indicate that ZTO/Ag/ZTO multilayers are promising as indium-free, transparent electrode substitutes for conventional ITO electrodes in cost-efficient IOSCs.     

Enhancement of the photoelectric performance of dye-sensitized solar cells by using a CaCO3-coated TiO2 nanoparticle film as an electrode

Core-shell-type nanoparticles with TiO₂ cores and CaCO₃ shells were applied as the electrode of dye-sensitized solar cells. The performance of the cell was significantly improved (as high as 26.7%) compared to the case when un-coated TiO₂ particle film was used as electrode. The improved energy conversion efficiency has been ascribed to (i) enhanced dye adsorption due to the high isoelectric point of the overlayer, and (ii) the prevention of the back electron transfer by the insulating nature of the overlayer.     

Influence of In2S3 film properties on the behavior of CuInS2/In2S3/ZnO type solar cells

Solar cells of CuInS₂/In₂S₃/ZnO type are studied as a function of the In₂S₃ buffer deposition conditions. In₂S₃ is deposited from an aqueous solution containing thioacetamide (TA), as sulfur precursor and In³⁺. In parallel, variable amounts of In₂O₃ are deposited that have an important influence on the buffer layer behavior. Starting from deposition conditions determined in a preliminary study, a set of parameters is chosen to be most determining for the buffer layer behavior, namely the solution temperature, the concentration of thioacetamide [TA], and the buffer thickness. The solar cell results are discussed in relation with these parameters. Higher efficiency is attained with buffer deposited at high temperature (70 °C) and [TA] (0.3 M). These conditions are characterized by short induction time, high deposition rate and low In₂O₃ content in the buffer. On the other hand, the film deposited at lower temperature has higher In₂O₃ content, and gives solar cell efficiency sharply decreasing with buffer thickness. This buffer type may attain higher conversion efficiencies if deposited on full covering very thin film.     

UV light protection through TiO2 blocking layers for inverted organic solar cells

Fully organic solar cells (OSCs) based on polymers and fullerenes have attracted remarkable interest during the last decade and high power conversion efficiencies (PCEs) beyond 8% have been realized. However, air stability of these cells remains poor. The conventional geometry of OSCs utilizes strongly oxidizing metal top contacts like Al or Ca. These metals are easily oxidized in air resulting in rapid decrease of PCE if cells are not perfectly encapsulated. Using a thin electron-selective hole-blocking bottom layer like TiO₂ enables fabrication of solar cells in a so-called inverted geometry. In this geometry, noble metals like Ag or Au can be used as top contacts, which are less sensitive to ambient oxygen. Thus, air-stability of these inverted solar cells is significantly improved. In this study we investigate inverted polythiophene-methanofullerene solar cells. We find significant influence of the TiO₂ layer thickness on light absorption and illumination stability of the solar cells, as well as the trap filling by photoinduced carriers. Even though TiO₂ layers as thick as 500 nm seem not to be detrimental for charge transport, light intensity losses limit the device performance. In turn, illumination stability is better for thicker TiO₂ layers, which can serve as UV filters and protect the photoactive materials from degradation, when compared to thin TiO₂ layers. Considering these different effects we state that a thickness of 100 nm is the optimization of the TiO₂ layer.     

CuInS2/In2S3 thin film solar cell using spray pyrolysis technique having 9.5% efficiency

Copper indium sulfide (CuInS₂)/In₂S₃ solar cells were fabricated using spray pyrolysis method and high short circuit current density and moderate open circuit voltage were obtained by adjusting the condition of deposition and thickness of both the layers. Consequently, a relatively high efficiency of 9.5% (active area) was obtained without any anti-reflection coating. The cell structure was ITO/CuInS₂/In₂S₃/Ag. We avoided the usual cyanide etching and CdS buffer layer, both toxic, for the fabrication of the cell.     

Unique TiO2 paste for high efficiency dye-sensitized solar cells

A novel titanium oxide paste based on Pechini sol-gel method and nanocrystalline titanium oxide powder have been successfully developed. Titanium oxide layers possess high inner surface area assuring high dye loading and well-connected nanocrystalline grains assuring good electron transport within the layer. The dye-sensitized layers have been used to assemble dye-sensitized solar cells with acetonitrile- and ionic liquid-based electrolyte. Overall conversion efficiencies of dye-sensitized solar cells (DSSCs) determined under standard test conditions (100 mW/cm², 25 °C and AM 1.5 G) are 10.2% for acetonitrile and 7.3% for ionic liquid-based electrolyte.     

ESR study of photoinjection of hydrogen in nanostructured MoO3 thin films

Formation of paramagnetic centers arising in highly disordered MoO₃ films due to photoinjection of hydrogen at room and liquid helium temperatures has been investigated. At room temperature the concentration of Mo⁵⁺ paramagnetic centers very quickly comes to a steady-state value, whereas at liquid helium temperature it grows continuously with exposure during the whole illumination time. Formation of free radicals forming due to the detachment of hydrogen atoms from the hydrogen-donor molecules has been observed at liquid helium temperature. Its reaction rate decreases twice during the illumination, whereas the formation rate of the Mo⁵⁺ centers decreases more than an order of the magnitude. This difference in behavior has been attributed to the pairing of the Mo⁵⁺ centers.     

Hybrid inverted organic photovoltaic cells based on nanoporous TiO2 films and organic small molecules

Solar cells based on nanoporous TiO₂ films with an inverted structure of indium tin oxide (ITO)/TiO₂/copper phthalocyanine (CuPc):fullerene (C₆₀)/CuPc/poly(3,4-oxyethyleneoxythiophene):poly(styrene sulfonate) (PEDOT:PSS)/Au were fabricated. The best overall photovoltaic performance undergoing a series of device optimization was achieved with the device of ITO/dense TiO₂ (30 nm)/nanoporous TiO₂ (130 nm)/C₆₀:CuPc (1:6 weight) (20 nm)/CuPc (20 nm)/PEDOT:PSS (50 nm)/Au (30 nm). The device using the nanoporous TiO₂ films has better photovoltaic properties compared to those using dense TiO₂ films. Higher photovoltaic performances were obtained by introducing a coevaporated layer of C₆₀:CuPc between TiO₂ and CuPc. The stability of inverted structure was better than that of the normal device, which gives a promising way for fabrication of solar cells with improved stability.     

Environment-friendly energy from all-carbon solar cells based on fullerene-C60

An efficient single layer organic solar cell based on plain buckminsterfulerence (C₆₀) has been fabricated. By inserting a very thin N,N′-bis(naphthalene-1-yl)-N,N′-bis(phenyl)benzidine layer between the indium tin oxide and single C₆₀ active layer, a short-circuit current of 1.98 mA/cm² and an open-circuit voltage of 0.52 V are obtained under 100 mW/cm² AM1.5G simulated illumination. The highest power conversion efficiency of 0.414% based on plain C₆₀ is thus demonstrated, which is the first step to realize an environment-friendly energy source.     

Chemical stability of sputtered Mo/Sb2Te3 and Ni/Sb2Te3 layers in view of stable back contacts for CdTe/CdS thin film solar cells

Sb–Te phases sputtered from an Sb₂Te₃/Sb/Te target in a substrate temperature range from 293 to 523 K are characterised by X-ray diffraction (XRD) and Hall measurements. A simple thermodynamic model is introduced for estimating the chemical stability of the Ni/Sb₂Te₃ and the Mo/Sb₂Te₃ interface. These data and the results of kinetic test reactions for sputtered Ni/Sb₂Te₃, Ni/Sb–Te, Mo/Sb₂Te₃ and Mo/Sb–Te layers are compared using XRD measurements. Metal/Sb₂Te₃ thin film double-layer systems are used as a model for an innovative back contact for CdTe/CdS thin film solar cells offering an improved long-term stability.     

Influence of Alq3/Au cathode on stability and efficiency of a layered organic solar cell in air

A relatively long lifetime organic solar cell, containing a thin tris-8-hydroxy-quinolato aluminum (Alq₃) layer under an Au cathode, is described. Half-lifetime of the cell in the darkness is over 7 weeks and 30% of the initial power conversion efficiency (η) is obtained after 18 weeks. This represents a substantial increase in lifetime compared to that of the unencapsulated Al-cathode cells. Efficiency is enhanced by 60 times compared to a cell that does not contain Alq₃, being 0.60%. The proposed role of Alq₃/Au cathode in this cell is discussed in detail.     

Role of buffer layer at the p/i interface on the stabilized efficiency of a-Si solar cells

Light induced degradation of single junction and double junction a-Si:H solar cells has been studied. Cells with and without buffer layers at the p/i interfaces have been fabricated. It is found that light induced degradation is faster in the cells with buffer layers. Defect density increases faster and degraded efficiency with respect to the initial efficiency decreases at a higher rate for the cells with buffer layers. Spectral response study for double junction cells shows that collection efficiency decreases for the bottom cell only. So it is found that the absolute stabilized efficiency is highest for a double junction cell with buffer layer at the top cell only.     

Al2O3-coated nanoporous TiO2 electrode for solid-state dye-sensitized solar cell

This paper reports the preparation of a core-shell nanoporous electrode consisting of an inner TiO₂ porous matrix and a thin overlayer of Al₂O₃, and its application for solid-state dye-sensitized solar cell using p-CuI as hole conductor. Al₂O₃ overlayer was coated onto TiO₂ porous film by the surface sol–gel process. The role of Al₂O₃ layer thickness on the cell performance was investigated. The solar cells fabricated from Al₂O₃-coated electrodes showed superior performance to the bare TiO₂ electrode. Under illumination of AM 1.5 simulated sunlight (89 mW/cm²), a ca. 0.19 nm Al₂O₃ overlayer increased the photo-to-electric conversion efficiency from 1.94% to 2.59%.     

Fabrication of CuInSe2 films and solar cells by the sequential evaporation of In2Se3 and Cu2Se binary compounds

Cu₂Se/In_xSe(x≈1) double layers were prepared by sequentially evaporating In₂Se₃ and Cu₂Se binary compounds at room temperature on glass or Mo-coated glass substrates and CuInSe₂ films were formed by annealing them in a Se atmosphere at 550°C in the same vacuum chamber. The In_xSe thickness was fixed at 1 μm and the Cu₂Se thickness was varied from 0.2 to 0.5 μm. The CuInSe₂ films were single phase and the compositions were Cu-rich when the Cu₂Se thickness was above 0.35 μm. And then, a thin CuIn₃Se₅ layer was formed on the top of the CuInSe₂ film by co-evaporating In₂Se₃ and Se at 550°C. When the thickness of CuIn₃Se₅ layer was about 150 nm, the CuInSe₂ cell showed the active area efficiency of 5.4% with V_oc=286 mV, J_sc=36 mA/cm² and FF=0.52. As the CuIn₃Se₅ thickness increased further, the efficiency decreased.     

Electro deposited In2S3 buffer layers for CuInS2 solar cells

We report the electro deposition of In₂S₃ buffer layers for CuInS₂ solar cells. All materials and deposition conditions were selected taking into account environmental, economic and technological aspects of a potential transfer to large volume industrial production. Different bath compositions and electro deposition parameters were studied. The obtained films exhibited complete substrate coverage, confirmed by SEM and XPS. In/S ratio close to 2/3 was obtained. XPS measurements detected the presence of indium hydroxide, transforming into oxide upon anneal at 200 °C. Maximum photoelectric conversion efficiency of 7.1% was obtained, limited mainly by a low fill factor (51%). Further process optimization is expected to lead to efficiencies comparable to CdS buffers. So far, open-circuit voltages as high as 660 mV were demonstrated.     

The nature of the photochromism arising in the nanosized MoO3 films

We carried out the experiments which show unambiguously that not one, as it was commonly accepted, but three optical absorption bands corresponding to different color centers arise in the nanosized MoO₃ films due to hydrogen atoms. Varying the conditions for the photoinjection of hydrogen into the MoO₃ films, it is possible to change drastically the correlation between the concentrations of different arising centers, which in turn yields the great difference in the optical absorption spectra. Our findings are crucial for understanding of the nature of electrochromism and photochromism not only in MoO₃ films but also in the series of the transition metal oxide films.