Recent Advances in Mechanically Transferable III-Nitride Based on 2D Buffer Strategy

Group III-nitrides have attracted significant attention in recent years for their wide tunable band-gaps and excellent optoelectronic capabilities, which are advantageous for several applications including light-emitting diodes, lasers, photodetectors, and large-size low-cost power electronic devices. However, conventional epitaxy accompanied by the covalent bond formation renders the transfer of nitride epilayers difficult, thereby limiting the application potential of nitrides in wearable and flexible electronics. Furthermore, interfacial covalent bonds also limit substrate selection and hinder the development of heterogeneous integration between nitrides and other material systems. 2D materials can mitigate these problems significantly. On the one hand, due to the weak van der Waals forces between the layers of 2D materials, influences of lattice mismatch can be avoided to improve crystal quality. On the other hand, delamination and transfer of nitride epilayers can be achieved easily. Therefore, this study focuses on providing comprehensive guidelines regarding the exfoliation of epitaxial layers using 2D materials to provide new design freedoms for nitride devices. Different 2D buffers and release layers have also been discussed. Furthermore, the limitations, promising solutions, future directions, and applicability of this strategy to flexible nitride devices are presented.     

2D or Not 2D: Strain Tuning in Weakly Coupled Heterostructures

A route to realize strain engineering in weakly bonded heterostructures is presented. Such heterostructures, consisting of layered materials with a pronounced bond hierarchy of strong and weak bonds within and across their building blocks respectively, are anticipated to grow decoupled from each other. Hence, they are expected to be unsuitable for strain engineering as utilized for conventional materials which are strongly bonded isotropically. Here, it is shown for the first time that superlattices of layered chalcogenides (Sb₂Te₃/GeTe) behave neither as fully decoupled two‐dimensional (2D) materials nor as covalently bonded three‐dimensional (3D) materials. Instead, they form a novel class of 3D solids with an unparalleled atomic arrangement, featuring a distribution of lattice constants, which is tunable. A map to identify further material combinations with similar characteristic is given. It opens the way for the design of a novel class of artificial solids with unexplored properties.     

Manipulating Spin Exchange Interactions and Spin-Selected Electron Transfers of 2D Metal Phosphorus Trisulfide Crystals for Efficient Oxygen Evolution Reaction

Because oxygen molecules in the ground state favor a triplet spin configuration, spin-polarized electrons at electrocatalysts may promote the generation of parallel spin-aligned oxygen atoms, enhancing oxygen evolution reaction (OER) kinetics. In this study, a significant enhancement of OER performance is demonstrated by controlling the spin-exchange interaction and spin-selected electron transfer of 2D Co_xFe_1−xPS₃ (x = 0–0.45) van der Waals (vdW) single crystals through Co doping. The pristine FePS₃ exhibits antiferromagnetic orbital ordering, while the Co-doped FePS₃ exhibits the emergence of interatomic ferromagnetism due to doping-mediated magnetic exchange interactions. The coupling between Fe and Co ions in the Co-doped FePS₃ crystal allows the formation of efficient spin-selective electron transfer channels compared to the pristine FePS₃. The correlation of spin-exchange interactions and spin-selected electron transfers of 2D Co-doped FePS₃ crystals with a superior OER performance is further revealed by superconducting quantum interference device magnetometer, in situ X-ray absorption near edge spectra and density functional theory simulations. The result suggests that manipulating the spin-exchange interactions of 2D vdW crystals to enhance the spin-selected electron transfer efficiencies through doping is an effective strategy to boost their OER catalytic performances.     

Interplay between Structural and Thermoelectric Properties in Epitaxial Sb2+xTe3 Alloys

In recent years strain engineering is proposed in chalcogenide superlattices (SLs) to shape in particular the switching functionality for phase change memory applications. This is possible in Sb₂Te₃/GeTe heterostructures leveraging on the peculiar behavior of Sb₂Te₃, in between covalently bonded and weakly bonded materials. In the present study, the structural and thermoelectric (TE) properties of epitaxial Sb_2+xTe₃ films are shown, as they represent an intriguing option to expand the horizon of strain engineering in such SLs. Samples with composition between Sb₂Te₃ and Sb₄Te₃ are prepared by molecular beam epitaxy. A combination of X‐ray diffraction and Raman spectroscopy, together with dedicated simulations, allows unveiling the structural characteristics of the alloys. A consistent evaluation of the structural disorder characterizing the material is drawn as well as the presence of both Sb₂ and Sb₄ slabs is detected. A strong link exists among structural and TE properties, the latter having implications also in phase change SLs. A further improvement of the TE performances may be achieved by accurately engineering the intrinsic disorder. The possibility to tune the strain in designed Sb_2+xTe₃/GeTe SLs by controlling at the nanoscale the 2D character of the Sb_2+xTe₃ alloys is envisioned.     

Anomalous Dimensionality-Driven Phase Transition of MoTe2 in Van der Waals Heterostructure

Phase transition in nanomaterials is distinct from that in 3D bulk materials owing to the dominant contribution of surface energy. Among nanomaterials, 2D materials have shown unique phase transition behaviors due to their larger surface-to-volume ratio, high crystallinity, and lack of dangling bonds in atomically thin layers. Here, the anomalous dimensionality-driven phase transition of molybdenum ditelluride (MoTe₂) encapsulated by hexagonal boron nitride (hBN) is reported. After encapsulation annealing, single-crystal 2H-MoTe₂ transformed into polycrystalline T_d-MoTe₂ with tilt-angle grain boundaries of 60°-glide-reflection and 120°-twofold rotation. In contrast to conventional nanomaterials, the hBN-encapsulated MoTe₂ exhibit a deterministic dependence of the phase transition on the number of layers, in which the thinner MoTe₂ has a higher 2H-to-T_d phase transition temperature. In addition, the vertical and lateral phase transitions of the stacked MoTe₂ with different crystalline orientations can be controlled by inserted graphene layers and the thickness of the heterostructure. Finally, it is shown that seamless T_d contacts for 2H-MoTe₂ transistors can be fabricated by using the dimensionality-driven phase transition. The work provides insight into the phase transition of 2D materials and van der Waals heterostructures and illustrates a novel method for the fabrication of multi-phase 2D electronics.     

Atomic Insights of Self-Healing in Silicon Nanowires

The self-healing capability is highly desirable in semiconductors to develop advanced devices with improved stability and longevity. In this study, the automatic self-healing in silicon nanowires is reported, which are one of the most important building blocks for high-performance semiconductor nanodevices. A recovery of fracture strength (10.1%) on fractured silicon nanowires is achieved, which is demonstrated by in situ transmission electron microscopy tensile tests. The self-healing mechanism and factors governing the self-healing efficiency are revealed by a combination of atomic-resolution characterizations and atomistic simulations. Spontaneous rebonding, atomic rearrangement, and van der Waals attraction are responsible for the self-healing in silicon nanowires. Additionally, the self-healing efficiency is affected by the fracture surface roughness, the nanowire size, the nanowire orientation, and the passivation of dangling bonds on fracture surfaces. These new findings shed light on the self-healing mechanism of silicon nanowires and provide new insights into developing high-lifetime and high-security semiconductor devices.     

Manipulation of Magnetic Skyrmion in a 2D van der Waals Heterostructure via Both Electric and Magnetic Fields

As a promising candidate for the much-desired low power consumption spintronic devices, 2D magnetic van der Waals material also provides a versatile platform for the design and control of topological spin textures. In this work on WTe₂/CrCl₃ bilayer van der Waals heterostructures, a complete Néel-type skyrmion–bimeron–ferromagnet phase transition is demonstrated, accompanied by the evolution of the topological number. This cyclic transition, mediated by a perpendicular magnetic field, is largely driven by the competition between the out-of-plane magnetocrystalline anisotropy and magnetic dipole–dipole interaction. In the presence of a driving current, the Néel-type skyrmion gains a higher velocity yet larger skyrmion Hall angle, in comparison to the bimeron. By incorporating a ferroelectric CuInP₂S₆ monolayer as a substrate, writing and erasing of skyrmions may be regulated using a ferroelectric polarization. This work sheds light on a novel approach to the design and control of magnetic skyrmions on 2D van der Waals materials.     

van der Waals Epitaxial Growth of Atomically Thin 2D Metals on Dangling‐Bond‐Free WSe2 and WS2

2D metals have attracted considerable recent attention for their special physical properties, such as charge density waves, magnetism, and superconductivity. However, despite some recent efforts, the synthesis of ultrathin 2D metals nanosheets down to monolayer thickness remains a significant challenge. Herein, by using atomically flat 2D WSe₂ or WS₂ as the growth substrate, the synthesis of atomically thin 2D metallic MTe₂ (M = V, Nb, Ta) single crystals with the thickness down to the monolayer regime and the creation of atomically thin MTe₂/WSe₂ (WS₂) vertical heterojunctions is reported. Comparison with the growth on the SiO₂/Si substrate under the same conditions reveals that the utilization of the dangling‐bond‐free WSe₂ or WS₂ as the van der Waals epitaxy substrates is crucial for the successful realization of atomically thin MTe₂ (M = V, Nb, Ta) nanosheets. It is further shown that the epitaxial grown 2D metals can function as van der Waals contacts for 2D semiconductors with little interface damage and improved electronic performance. This study defines a robust van der Waals epitaxy pathway to ultrathin 2D metals, which is essential for fundamental studies and potential technological applications of this new class of materials at the 2D limit.     

Production and Patterning of Liquid Phase–Exfoliated 2D Sheets for Applications in Optoelectronics

2D materials (2DMs), which can be produced by exfoliating bulk crystals of layered materials, display unique optical and electrical properties, making them attractive components for a wide range of technological applications. This review describes the most recent developments in the production of high‐quality 2DMs based inks using liquid‐phase exfoliation (LPE), combined with the patterning approaches, highlighting convenient and effective methods for generating materials and films with controlled thicknesses down to the atomic scale. Different processing strategies that can be employed to deposit the produced inks as patterns and functional thin‐films are introduced, by focusing on those that can be easily translated to the industrial scale such as coating, spraying, and various printing technologies. By providing insight into the multiscale analyses of numerous physical and chemical properties of these functional films and patterns, with a specific focus on their extraordinary electronic characteristics, this review offers the readers crucial information for a profound understanding of the fundamental properties of these patterned surfaces as the millstone toward the generation of novel multifunctional devices. Finally, the challenges and opportunities associated to the 2DMs' integration into working opto‐electronic (nano)devices is discussed.     

Direct Imaging of Antiferromagnet-Ferromagnet Phase Transition in van der Waals Antiferromagnet CrSBr

The advent of van der Waals (vdW) ferromagnetic (FM) and antiferromagnetic (AFM) materials offers unprecedented opportunities for spintronics and magneto-optic devices. Combining magnetic Kerr microscopy and density functional theory calculations, the AFM-FM transition is investigated and a surprising abnormal magneto-optic anisotropy in vdW CrSBr associated with different magnetic phases (FM, AFM, or paramagnetic state) is discovered. This unique magneto-optic property leads to different anisotropic optical reflectivity from different magnetic states, permitting direct imaging of the AFM Néel vector orientation and the dynamic process of the AFM-FM transition within a magnetic field. Using Kerr microscopy, not only the domain nucleation and propagation process is imaged but also the intermediate spin-flop state in the AFM-FM transition is identified. The unique magneto-optic property and clear identification of the dynamics process of the AFM-FM phase transition in CrSBr demonstrate the promise of vdW magnetic materials for future spintronic technology.     

Understanding the Origin of Li2MnO3 Activation in Li‐Rich Cathode Materials for Lithium‐Ion Batteries

Li‐rich layered cathode materials have been considered as a family of promising high‐energy density cathode materials for next generation lithium‐ion batteries (LIBs). However, although activation of the Li₂MnO₃ phase is known to play an essential role in providing superior capacity, the mechanism of activation of the Li₂MnO₃ phase in Li‐rich cathode materials is still not fully understood. In this work, an interesting Li‐rich cathode material Li_1.87Mn_0.94Ni_0.19O₃ is reported where the Li₂MnO₃ phase activation process can be effectively controlled due to the relatively low level of Ni doping. Such a unique feature offers the possibility of investigating the detailed activation mechanism by examining the intermediate states and phases of the Li₂MnO₃ during the controlled activation process. Combining powerful synchrotron in situ X‐ray diffraction analysis and observations using advanced scanning transmission electron microscopy equipped with a high angle annular dark field detector, it has been revealed that the subreaction of O₂ generation may feature a much faster kinetics than the transition metal diffusion during the Li₂MnO₃ activation process, indicating that the latter plays a crucial role in determining the Li₂MnO₃ activation rate and leading to the unusual stepwise capacity increase over charging cycles.