Magnetic Field‐Enhanced Thermoelectric Performance in Dirac Semimetal Cd3As2 Crystals with Different Carrier Concentrations

The magneto‐thermoelectric figure of merit (ZT) in crystals of the topological Dirac semimetal Cd₃As₂ with different carrier concentrations is studied. The ZTs for all the crystals increase with the temperature and show maxima at high temperatures. Meanwhile, the temperatures corresponding to the ZT maxima increase with the carrier concentration. The limit to the improvement in ZT(T) at high temperature could be related to the unusual large enhancement in thermal conductivity at elevated temperatures. The bipolar effect and Dirac liquid behavior are presented as processes possibly responsible for the peculiar behavior of the thermal conductivity. Applying a transverse magnetic field initially leads to a dramatic enhancement and, subsequently, to a slight reduction in ZT for all the crystals. The maximum ZT achieved in a magnetic field increases with the carrier concentration and reaches 1.24 at 450 K in a magnetic field of 9 T for the crystal with the highest carrier concentration. It is expected that this work will be beneficial to the current interests in optimizing the thermoelectric properties of quantum topological materials.     

Ultrafast Synthesis of Large-Sized and Conductive Na3V2(PO4)2F3 Simultaneously Approaches High Tap Density,Rate and Cycling Capability

The Na₃V₂(PO₄)₂F₃ (NVPF) cathode material is usually nano-sized particles exhibiting low tap density, high specific surface area, correspondingly low volume energy density, and cycle stability of the sodium-ion batteries (SIBs). Herein, a high-temperature shock (HTS) strategy is proposed to synthesize NVPF (HTS-NVPF) with uniform conducting network and high tap density. During a typical HTS process (heating rate of 1100 °C s⁻¹ for 10 s), the precursors rapidly crystallize and form large-sized and dense particles. The tight connection between particles not only enhances their contact with carbon layers, but also reduces the specific surface area that inhibits side reactions between the interfaces and the electrolyte. Besides, ultrafast synthesis of NVPF reduces the F loss and amount of Na₃V₂(PO₄)₃ impurities, which improve cycling capability. The HTS-NVPF demonstrates a high energy density of 413.4 Wh kg⁻¹ and an ultra-high specific capacity of 103.4 mAh g⁻¹ at 10 C as well as 84.2% capacity retention after 1000 cycles. In addition, the excellent temperature adaptability of HTS-NVPF (−45–55 °C) and remarkable electrochemical properties of NVPF||HC full cell demonstrate extreme competitiveness in commercial SIBs. Therefore, the HTS technique is considered to be a high-efficiency strategy to synthetize NVPF and is expected to prepare other cathode materials.     

High Hall Mobility P‐type Cu2SnS3‐Ga2O3 with a High Work Function

A new transparent p‐type oxide semiconductor (POS) is reported, Cu₂SnS₃‐Ga₂O₃, having high Hall mobility of 36.22 cm² V⁻¹s⁻¹, and high work function of 5.17 eV. The existence of Cu₂SnS₃ and Ga₂O₃ phases in the film is confirmed by X‐ray photoelectron spectroscopy results and the Cu₂SnS₃ shows polycrystalline structure according to Raman spectrum and X‐ray diffraction analysis. The transparent Cu₂SnS₃‐Ga₂O₃ exhibits the carrier concentration of 5.86 × 10¹⁶ cm⁻³, and electrical resistivity of 1.94 Ω·cm. The transparent POS is applied to green quantum light‐emitting diodes (QLEDs) as a hole injection layer (HIL) because of its high work function. The QLED exhibits the maximum current efficiency of 51.72 cd A⁻¹, power efficiency of 31.97 lm W⁻¹, and external quantum efficiency (EQE) of 14.93%, which are much higher than the QLED using polyethylene dioxythophene:poly(styrenesulfonate) HIL exhibiting current efficiency of 42.66 cd A⁻¹, power efficiency of 20.33 lm W⁻¹, and EQE of 12.36%. The Cu₂SnS₃‐Ga₂O₃ developed in this work can be widely used as a transparent and conductive p‐type oxide for thin‐film devices.     

In Situ Fabrication of Highly Luminescent Bifunctional Amino Acid Crosslinked 2D/3D NH3C4H9COO(CH3NH3PbBr3)n Perovskite Films

The perovskite quantum dots are usually synthesized by solution chemistry and then fabricated into film for device application with some extra process. Here it is reported for the first time to in situ formation of a crosslinked 2D/3D NH₃C₄H₉COO(CH₃NH₃) _n Pb_n Br_3n perovskite planar films with controllable quantum confine via bifunctional amino acid crosslinkage, which is comparable to the solution chemistry synthesized CH₃NH₃PbBr₃ quantum dots. These atomic layer controllable perovskite films are facilely fabricated and tuned by addition of bi‐functional 5‐aminovaleric acid (Ava) of NH₂C₄H₉COOH into regular (CH₃NH₃)PbBr₃ (MAPbBr₃) perovskite precursor solutions. Both the NH₃⁺ and the COO^? groups of the zwitterionic amino acid are proposed to crosslink the atomic layer MAPbBr₃ units via Pb? COO bond and ion bond between NH₃⁺ and [PbX₆] unit. The characterizations by atomic force microscopy, scanning electron microscopy, Raman, and photoluminescence spectroscopy confirm a successful fabrication of ultrasmooth and stable film with tunable optical properties. The bifunctional crosslinked 2D/3D Ava(MAPbBr₃)_n perovskite films with controllable quantum confine would serve as distinct and promising materials for optical and optoelectronic applications.     

基于金属-半导体-金属结构的Bi2Te3室温高响应率太赫兹探测器

基于二维拓扑绝缘体Bi_2Te_3材料利用微纳工艺制备了金属-拓扑绝缘体-金属(MTM)结构的太赫兹光电探测器.器件在0. 022 THz的响应率可达2×10~3A/W,噪声等效功率(NEP)低于7. 5×10~(-15)W/Hz~(1/2),探测率D~*高于1.62×10~(11)cm·Hz~(1/2)/W;在0. 166 THz的响应率可达281. 6 A/W,NEP低于5. 18×10~(-14)W/Hz~(1/2),D~*高于2. 2×10~(10)cm·Hz~(1/2)/W;在0. 332 THz的响应率可达7. 74 A/W,NEP低于1. 75×10~(-12)W/Hz~(1/2),D~*高于6. 7×10~8cm·Hz~(1/2)/W;同时器件在太赫兹波段具有小的时间常数(7～8μs).该项工作突破了传统光子探测的带间跃迁,实现了可室温工作、高响应率、高速响应以及高灵敏度的太赫兹探测器件.     

Overcoming the Unfavorable Kinetics of Na3V2(PO4)2F3//SnPx Full‐Cell Sodium‐Ion Batteries for High Specific Energy and Energy Efficiency

In this work, a full‐cell sodium‐ion battery (SIB) with a high specific energy approaching 300 Wh kg^?1 is realized using a sodium vanadium fluorophosphate (Na₃V₂(PO₄)₂F₃, NVPF) cathode and a tin phosphide (SnP_x) anode, despite both electrode materials having greatly unbalanced specific capacities. The use of a cathode employing an areal loading more than eight times larger than that of the anode can be achieved by designing a nanostructured nanosized NVPF (n‐NVPF) cathode with well‐defined particle size, porosity, and conductivity. Furthermore, the high rate capability and high potential window of the full‐cell can be obtained by tuning the Sn/P ratio (4/3, 1/1, and 1/2) and the nanostructure of an SnP_x/carbon composite anode. As a result, the full‐cell SIBs employing the nanostructured n‐NVPF cathode and the SnP_x/carbon composite anode (Sn/P = 1/1) exhibit outstanding specific energy (≈280 Wh kg^?1_{(cathode+anode)}) and energy efficiency (≈78%); furthermore, the results are comparable to those of state‐of‐the‐art lithium‐ion batteries.     

Electrically Programmable Bistable Capacitor for High‐Frequency Applications Based on Charge Storage at the (Ba,Sr)TiO3/Al2O3 Interface

Hysteresis is induced in paraelectric (Ba,Sr)TiO₃ (BST) thin‐film capacitors by inserting an Al₂O₃ barrier layer of a few nanometers in thickness between the BST layer and the electrode. The observed hysteresis is explained by ambipolar charge carrier injection through the Al₂O₃ layer and charge storage at the BST/Al₂O₃ interface. The magnitude of the hysteresis can be directly adjusted by manipulating the thickness ratio between BST and Al₂O₃. Taking into account the low loss of (Ba,Sr)TiO₃ capacitors, the observed switching and retention characteristics are suitable for application as non‐volatile programmable high‐frequency devices, e.g., in radio‐frequency identification.     

Layered (C6H5CH2NH3)2CuBr4 Perovskite for Multilevel Storage Resistive Switching Memory

Although there have been attempts to use non‐lead based halide perovskite materials as insulating layers for resistive switching memory, the ratio of low resistance state (LRS) to high resistance state (HRS) ( = ON/OFF ratio) and/or endurance is reported to be mostly lower than 10³. Resistive switching memory characteristics of layered (BzA)₂CuBr₄ (BzA = C₆H₅CH₂NH₃) perovskite with high ON/OFF ratio and long endurance are reported here. The X‐ray diffraction (XRD) pattern of the deposited (BzA)₂CuBr₄ layer shows highly oriented (00l) planes perpendicular to a Pt substrate. An Ag/PMMA/(BzA)₂CuBr₄/Pt device shows bipolar switching behavior. A forming step at around +0.5 V is observed before the repeated bipolar switching at the SET voltage of +0.2 V and RESET voltage of ‐0.3 V. The ON/OFF ratio as high as =10⁸ is monitored along with an endurance of ≈2000 cycles and retention time over 1000 s. The high ON/OFF ratio enables multilevel storage characteristics as confirmed by changing the compliance currents. Ohmic conduction at the LRS and Schottky emission at HRS are involved in electrochemical metallization process. The bipolar resistive switching property is retained after storing the device at ambient condition under relative humidity of about 50% for 2 weeks, which indicates that (BzA)₂CuBr₄ is stable memory material.     

3D Structural Strengthening Urchin‐Like Cu(OH)2‐Based Symmetric Supercapacitors with Adjustable Capacitance

Developing advanced three‐dimensional (3D) structural supercapacitors with both high capacity and good mechanical strength remains challenging. Herein, a novel road is reported for fabricating 3D structural strengthening supercapacitors with adjustable capacitance based on urchin‐like Cu(OH)₂ lattice electrodes by bridging 3D printing technology with a facile electroless plating and electro‐oxidation method. As revealed by the results, the 3D‐printed octet‐truss lattice electrode features a high volumetric capacitance of 8.46 F cm^?3 at 5 mA cm^?3 and superior retention capacity of 68% at 1 A cm^?3. The assembled symmetric supercapacitor with a 70.2% capacitance retention after 5000 cycles possesses a 12.8 Wh kg^?1 energy density at a power density of 2110.2 W kg^?1. Additionally, the resulting 3D structural strengthening electrodes can achieve both high compressive strength and toughness of 30 MPa and 264.7 kJ m^?3, respectively, demonstrating high mechanical strength and excellent antideformation capacity. With the proposed strategy, the electrochemical and mechanical properties of these novel 3D structural strengthened supercapacitors can be easily tuned by a simple spatial framework design, fulfilling the increasing demand of highly customized power sources in the space‐constrained microelectronics and astronautic electronics industries.