Effect of Fe-doping on the structural,optical and magnetic properties of ZnO thin films prepared by RF magnetron sputtering

In this paper, we report the fabrication and systematic characterization of Fe Doped ZnO thin Films. Fe_xZn_1−x O (x=0<0.05) films were prepared by RF magnetron sputtering on Si (400) substrate. Influence of Fe doping on structural, optical and magnetic properties has been studied. The X-ray diffraction (XRD) analysis shows that Fe doping has affected the crystalline structure, grain size and strain in the thin films. The best crystalline structure is obtained for 3% Fe Doping as observed from Atomic Force Microscopy (AFM) and X-ray diffraction (XRD). The magnetic properties studied using Vibrating Sample Magnetometer reveals the room temperature ferromagnetic nature of the thin films. However, changing the Fe concentration degrades the magnetic property in turn. The mechanism behind the above results has been discussed minutely in this paper.     

Effect of Ar:N2 flow rate on morphology,optical and electrical properties of CCTO thin films deposited by RF magnetron sputtering

Calcium copper titanate (CCTO) thin films were deposited on indium tin oxide (ITO) substrates using radio frequency (RF) magnetron sputtering, at selected Ar:N₂ flow rates (1:1, 1:2, 1:4, and 1:6 sccm) at ambient temperature. The effect of Ar:N₂ flow rate on the morphology, optical and electrical properties of the CCTO thin films were investigated using FESEM, XRD, AFM, Hall effect measurement, and UV–Vis spectroscopy. It was confirmed by XRD analysis that the thin films were produced is CCTO with cubic crystal structure. As the flow rate of Ar:N₂ increased up to 1:6 sccm, the thin film thickness reduced from 87 nm to 35 nm while the crystallite size of CCTO thin film decreased from 27 nm to 20 nm. Consequently, the surface roughness of thin film was halved from 8.74 nm to 4.02 nm. In addition, the CCTO thin films deposited at the highest Ar:N₂ flow rate studied, at 1:6 sccm; are having the highest sheet resistivity (13.27 Ω/sq) and the largest optical energy bandgap (3.68 eV). The results articulate that Ar:N₂ flow rate was one of the important process parameters in RF magnetron sputtering that could affect the morphology, electrical properties and optical properties of CCTO thin films.     

CIGS absorbing layers prepared by RF magnetron sputtering from a single quaternary target

Cu(In_1−xGa_x)Se₂ (CIGS) thin films were prepared by RF magnetron sputtering from a single quaternary target at multiple processing parameters. The structural, compositional, and electrical properties of the as-deposited films were systematically investigated by XRD, Raman, SEM, and Hall effects analysis. The results demonstrate that by adjusting the processing parameters, the CIGS thin films with a preferential orientation along the (112) direction which exhibited single chalcopyrite phase were obtained. The films deposited at relatively higher substrate temperature, sputtering power, and Ar pressure exhibited favorable stoichiometric ratio (Cu/(In+Ga):0.8–0.9 and Ga/(In+Ga):0.25–0.36) with grain size of about 1–1.5 µm, and desirable electrical properties with p-type carrier concentration of 10¹⁶−10¹⁷ cm⁻³ and carrier mobility of 10–60 cm²/Vs. The CIGS layers are expected to fabricate high efficiency thin film solar cells.     

Investigation into the effect of substrate material on microstructure and optical properties of thin films deposited via magnetron sputtering technique

This study aims at investigating the effect of the substrate material on growth mechanism and also microstructure of Ta₂O₅ thin films. For this purpose, atomic force microscopy, scanning electron microscopy, and interferometry analyses were implemented to reveal the influence of silicon wafer and amorphous BK7 glass substrates on the nucleation and growth mechanisms of Ta₂O₅ thin films deposited via the radio frequency magnetron sputtering technique. Results indicated that those films with finer morphologies had relatively higher nucleation densities. Compared with BK7 glass substrate, crystals formed on the silicon wafer were shown to be finer and had lower mean areas in more nucleation sites. Moreover, optical properties and morphological characteristics of the films on the silicon substrates had much more endurance after the annealing treatment. It was observed that shift in the transmission spectra of the deposited films after the treatment was insignificant, implying high packing density of the films. However, a 6-nm shift in the transmission spectra indicated low density and high porosity of the films. Finally, atomic force microscopy analysis along with the light scattering measurements confirmed the formation of a low-roughness film on the silicon wafer substrates.     

Structural and optical properties of a radio frequency magnetron-sputtered ZnO thin film with different growth angles

This study introduces optical properties of a columnar structured zinc oxide [ZnO] antireflection coating for solar cells. We obtained ZnO films of columnar structure on glass substrates using a specially designed radio frequency magnetron sputtering system with different growth angles. Field-emission scanning electron microscopy was utilized to check the growth angles of the ZnO films which were controlled at 0°, 15°, and 30°. The film thickness was fixed at 100 nm to get a constant experiment condition. Grain sizes of the ZnO films were measured by X-ray diffraction. A UV-visible spectrometer was used to measure the transmittance and reflectance of the ZnO film columnar structures as a function of the growth angles.     

The evolution behavior of microstructures and optical properties of ZnO films using a Ti buffer layer

ZnO thin films without and with Ti buffer layer were prepared on Si and glass substrates by radio frequency (RF) magnetron sputtering. The effects of Ti buffer layer with different sputtering time on the microstructure and optical properties of ZnO thin films had been investigated by means of X-ray diffraction (XRD), energy dispersive spectrometer, X-fluorescence spectrophotometer and ultraviolet–visible spectrophotometer. The XRD results showed that the full-width at half-maximum (FWHM) for the ZnO (002) diffraction peak gradually decreased with the increase of sputtering time of Ti buffer layer, indicating that the crystalline quality of ZnO thin films was improved. The UV peak located at 390 nm, two blue peaks located at about 435 and 487 nm, two green peaks located at about 525 and 560 nm were observed from PL spectra. The PL spectra showed that the strongest blue light emission of ZnO films was obtained from Ti buffer layer with the sputtering time of 10 min. Meanwhile, the origins of the emission peaks were discussed through the Gaussian deconvolution. We also studied the optical band gaps.     

The optical and electrical properties of ZnO:Al thin films deposited at low temperatures by RF magnetron sputtering

Several ZnO:Al thin films have been successfully deposited on glass substrates at different substrate temperatures by RF (radio frequency) magnetron sputtering method. Effects of the substrate temperatures on the optical and electrical properties of these ZnO:Al thin films were investigated. The UV–VIS–NIR spectra of the ZnO:Al thin films revealed that the average optical transmittances in the visible range are very high, up to 88%. X-ray diffraction results showed that crystallization of these films was improved at higher substrate temperature. The band gaps of ZnO:Al thin films deposited at 25 ℃, 150 ℃, 200 ℃, and 250 ℃ are 3.59 eV, 3.55 eV, 3.53 eV, and 3.48 eV, respectively. The Hall-effect measurement demonstrated that the electrical resistivity of the films decreased with the increase of the substrate temperature and the electrical resistivity reached 1.990×10^?3 Ω cm at 250 ℃.     

Growth evolution of CaB6 thin films deposited by DC magnetron sputtering

CaB₆ films were deposited by a DC magnetron sputtering method to explore the growth evolution systematically through changing sputtering time. The crystalline structure was characterized by XRD and GIXRD respectively, which showed that the films were anisotropic with nanocrystalline structure. The grain sizes increased with the deposition time, and a weak (100) texture appeared when the deposition time reached to 120 min. HRTEM was employed to demonstrate the crystalline structure. The surface morphology evolution of CaB₆ films was analyzed by AFM and FESEM. The results showed that the films were initially formed by fine columnar grains. With the deposition time extended, the films exhibited a dense columnar structure with faceted surfaces. The grain size, film thickness and crystallization degree all increased with the sputtering time.     

Sulphur doped DLC films deposited by DC magnetron sputtering

Diamond‐like carbon (DLC) and sulphur doped diamond‐like carbon (S‐DLC) films were synthesised at different sulphur molar percentage of 0%, 2%, 5%, 8% and 10% by direct current (DC) magnetron sputtering process using novel compressed sulphur‐graphite targets at relatively low power density. Films were characterised for their morphologies, structural, electrical and optical properties. Scanning electron microscope images reveal changes in the quality of the obtained films shown by the denser packing of DLC grains at different sulphur percentage. The conductivities of S‐DLC films were found to be in the range of 6.0 × 10^?3–0.6/Ω cm. The optical band gap energies were found to be in the range of ～1.4–2.0 eV. Both electrical and optical measurements exhibit nonlinear responses with optimum at around 5% sulphur molar percentage (minimum for conductivity and maximum for optical band gap energy). These trends of change in both conductivity and optical band gap energy are consistent with the variation in bond characters of the films indicated by Raman spectroscopy. © 2011 Canadian Society for Chemical Engineering     

Effect of deposition parameters on properties of TiO2 films deposited by reactive magnetron sputtering

TiO₂ films were grown onto unheated 5083 aluminum alloy substrates by reactive magnetron sputtering from a pure Ti target in Ar-O₂ gas mixture in different power, bias voltage, Ar/O₂ ratio and deposition time at room temperature. The effects of different deposition parameters on the structure and properties of TiO₂ films were investigated systematically by field emission scanning electron microscope (FESEM), atomic force microscope (AFM), X-ray diffractometer (XRD), X-ray photoelectron spectroscopy (XPS), nanoindentation tests, electrochemical tests and antibacterial tests. The results show that power and bias voltage are two main factors to affect the structure and properties of TiO₂ films during the sputtering process. XRD results show that anatase phase is the main phase of the film, and the enhanced content of anatase phase with the increase of sputtering power and bias voltage. Nanoindentation tests exhibit that higher H/E (Hardness/Modulus) ratio can be achieved by depositing TiO₂ film. And the corrosion resistance and antifouling property are all improved after depositing TiO₂ film. 2# sample shows the optimal corrosion resistance, E_corr and I_corr are −0.27388 V and 3.7232 μA/cm², respectively. 1# sample exhibits excellent antibacterial property, the d ensity of bacteria is only 217 cell / mm², which is 484% higher than that of uncoated matrix.     

Film thickness dependence of the dielectric properties of SrTiO3/BaTiO3 multilayer thin films deposited by double target RF magnetron sputtering

Four-layer SrTiO₃/BaTiO₃ thin films ((ST/BT)₄) with various thicknesses deposited on Pt/Ti/SiO₂/Si substrates at 500 °C by double target RF magnetron sputtering have been investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM), profilometry, capacitance-voltage and current-voltage measurements. The XRD patterns reveal the frame formation of the sputter deposited (ST/BT)₄ with controlled modulation. The adhesion between the Pt bottom electrode layer and the BT layer is excellent. The dielectric constant of the (ST/BT)₄ multilayer thin film increases with increasing film thickness. The effects of temperature, frequency, and bias voltage on the dielectric constant of the (ST/BT)₄ multilayer thin films are discussed in detail. The leakage current density of the (ST/BT)₄ multilayer with a thickness of 450.0 nm is lower than 1.0 × 10⁻⁸ A/cm² for the applied voltage of less than 5 V, showing that the multilayer thin films with such a characteristic could be applied for use in dynamic random access memory (DRAMs) capacitors.     

Fabrication and characterization of superhard tungsten boride layers deposited by radio frequency magnetron sputtering

The most promising areas of research of new super-hard materials are transition metal borides. These materials are one of the candidates for future superhard layers that will be competitive to DLC and c-BN layers. In this paper MoB-type tungsten boride (WB) layers were examined. WB layers have been deposited by radio frequency magnetron sputtering on Silicon (100), 304 stainless steel (SS 304) and Inconel 601 substrates. Measured thickness of herein prepared layers was about 1 µm, and all studied samples were dense, uniform and smooth. Surface investigation was performed by using an optical profilometer, atomic force microscopy, and scanning electron microscopy. The structure analysis was examined by using X-ray diffractometer (XRD) and transmission electron microscopy (TEM) techniques. Results from the XRD and TEM analysis showed that WB layers were dominated by (101) reflection and indicated a fine grain structure with a grain size of 20–40 nm. The effect of target sputtering power and ambient gas pressure was investigated. The hardness of WB layers deposited on silicon substrate was compared under the load from 1 mN to 5 mN. The hardness of WB layers deposited on SS 304 and Inconel was measured up to 50 mN. All layers of WB revealed excellent hardness exceeding 40 GPa.     

Structural and photoelectrochemical properties of SrTaO2N oxynitride thin films deposited by reactive magnetron sputtering

In this study, the influence of the degree of crystallization and thickness of films was correlated with the photoelectrochemical performance of SrTaO₂N semiconductor films for O₂ evolution reaction under visible light irradiation. Oxynitride films were deposited on various substrates using the sputtering in Ar + N₂ reactive atmosphere from a home-made SrTaO₂N target. Films with stoichiometric composition were obtained at a high temperature (T_S =800 °C) with reduced bandgap. The different substrates led to diverse degrees of film crystallization, from weakly crystallized to fully c-axis oriented. The photoelectrochemical performance was improved by improving the film crystallinity and the thickness. For further improvement of the photoelectrochemical performance, the following three limiting factors are identified: 1) low absorption coefficient, especially in the visible domain from 500 to 600 nm; 2) short lifetimes of excited charge carriers; and 3) permittivity with only moderate values lower than 10 in the visible-light domain.     

Improved physical properties of Al-doped ZnO thin films deposited by unbalanced RF magnetron sputtering

Room temperature Al-doped ZnO (AZO) thin films with improved crystalline and optical properties were grown on normal glass substrates using unbalanced RF magnetron sputtering technique. To modify the plasma density towards the substrate and enhance the crystalline nature, an additional magnetic field ranging from 0 to 6.0 mT has been applied to the AZO target by proper tuning of solenoid coil current from 0 to 0.2 A respectively, which plays a significant role for controlling the physical properties of AZO films. The results from XRD studies indicate that all AZO films were composed of hexagonal wurtzite structure with better crystal quality through the applied magnetic field, ZnO (002) plane as a preferred growth. Furthermore, XPS studies suggested that symmetric chemical shifts in the binding energies for the Zn 2p and O1s levels with applied magnetic field. SEM analysis revealed the formation of a smooth, homogeneous and dense morphological surface with applied magnetic field. From AFM analysis, it was observed that the applied magnetic field strongly influenced the grain size and the films showed decreasing tendency in electrical resistivity. Films exhibited superior optical transmittance more than 94% in the visible region essentially due to the formation of better crystalline nature. The results indicate that improved band gap from 3.10 to 3.15 eV with additional magnetic field varied from 0 to 6.0 mT respectively.     

Microstructural and optical properties of Ta-doped ZnO films prepared by radio frequency magnetron sputtering

Ta-doped ZnO films with different doping levels (0–5.02 at%) were prepared by radio frequency magnetron sputtering. The effects of the doping amount on the microstructure and the optical properties of the films were investigated. The grain size and surface roughness first significantly decrease and then slowly increase with the increase of Ta doping concentration. Both the grain size and the root mean square (RMS) roughness reach their minimum values at the doping content of 3.32 at%. X-ray Diffraction (XRD) patterns confirmed that the prepared Ta-doped ZnO films are polycrystalline with hexagonal wurtzite structure and a preferred orientation along the (002) plane. X-ray photoelectron spectroscopy (XPS) analysis reveals that Ta exists in the ZnO film in the Ta⁵⁺ and Ta⁴⁺ states. The average optical transmission values of the Ta-doped ZnO films are higher than those of the un-doped ZnO film in the visible region. The band gap energy extracted from the absorption edge of transmission spectra becomes large and the near band edge (NBE) emission energy obtained from PL spectra blueshifts to high energy when the Ta doping content grows from 0 at% to 5.02 at%, which can be explained by the Burstein–Moss shift.     

Influence of power frequency on the performance of SiC thin films deposited by pulsed DC magnetron sputtering

Because of its high stability, good wear resistance, and high mechanical hardness, SiC is widely used in various mechanical parts as a protective film. However, there have been few reports published on the preparation of SiC films by pulsed DC magnetron sputtering. In this work, SiC films were deposited onto glass and ceramic substrates from a sintered SiC target through pulsed DC magnetron sputtering. The influence of the variation of the power pulse frequency (0?kHz, 50?kHz, 150?kHz, 250?kHz, and 300?kHz) on the film’s performance was studied. The surface morphology, structural characteristics, hardness, and adhesion strength of the deposited SiC films were investigated here. The results show that all the deposited films adhered well to the substrate. They were smooth, compact, and presented an amorphous structure. The film hardness was found to increase as the pulse frequency was increased. When the pulse frequency was 250?kHz, the resulting SiC film possessed optimal mechanical properties with a hardness of 25.74?GPa (measured using a nanometer indentation instrument) and an adhesion strength of about 36?N (measured by scratch tester).     

Structural and nanomechanical properties of BiFeO3 thin films deposited by radio frequency magnetron sputtering

The nanomechanical properties of BiFeO₃ (BFO) thin films are subjected to nanoindentation evaluation. BFO thin films are grown on the Pt/Ti/SiO₂/Si substrates by using radio frequency magnetron sputtering with various deposition temperatures. The structure was analyzed by X-ray diffraction, and the results confirmed the presence of BFO phases. Atomic force microscopy revealed that the average film surface roughness increased with increasing of the deposition temperature. A Berkovich nanoindenter operated with the continuous contact stiffness measurement option indicated that the hardness decreases from 10.6 to 6.8 GPa for films deposited at 350°C and 450°C, respectively. In contrast, Young''s modulus for the former is 170.8 GPa as compared to a value of 131.4 GPa for the latter. The relationship between the hardness and film grain size appears to follow closely with the Hall–Petch equation.     

Dielectric properties of amorphous BaTiO3 films deposited by RF magnetron sputtering

In the present paper, dielectric properties of a-BaTiO₃ films have been investigated as a function of frequency (10⁻¹ to 10⁵ Hz) and temperature (25–350 °C) using the dielectric spectroscopy technique. Relaxation and ac-conductivity processes were analyzed in order to study charge transport in the bulk and at the electrode-film interfaces. It seems that the oxygen vacancies play an essential role in both processes.