Finite Element Analysis of Convection in Growth Cell for Diamond Growth Using Ni-Based Solvent

Thermal-electricaJ-fluid coupled finite element analyses are performed in the model of the growth cell in a high-pressure and high-temperature （HPHT） cubic apparatus in which the large diamond crystal can be grown by using Ni-based solvent with temperature gradient method （TGM）. The convection in the Ni-based solvent with different thicknesses at 1700-1800 K is simulated by finite element method （FEM）. The experiments of diamond crystal growth are also carried out by using Ni-based solvent at 5.7GPa and 1700-1800K in a China-type cubic high pressure apparatus （CHPA）. The simulation results show that the Rayleigh number in the solvent is enhanced obviously with the increasing solvent thickness. Good quality diamond single crystal cannot be grown if the Rayleigh number in the solvent is too high.     

Effects of Al and Ti/Cu on Synthesis of Type-IIa Diamond Crystals in Ni70Mn25Co5-C System at HPHT

High-quality type-Ⅱa gem diamond crystals are successfully synthesized in a NiToMn25Co5-C system by temperature gradient method （TGM） at about 5.5 GPa and 1560 K. Al and Ti/Cu are used as nitrogen getters respectively. While nitrogen getter Al or Ti/Cu is added into the synthesis system, some inclusions and caves tend to be introduced into the crystals. When Al is added into the solvent alloy, we would hardly gain high-quality type-Ⅱa diamond crystals with nitrogen concentration Nc 〈 1 ppm because of the reversible reaction of Al and N at high pressure and high temperature （HPHT）. Piowever, when Ti/Cu is added into the solvent alloy, high-quality type-Ⅱa diamond crystals with Nc 〈 1 ppm can be grown by decreasing the growth rate of diamonds.     

Dependence of Limited Growth Rate of High-Quality Gem Diamond on Growth Conditions

The growth rate of diamond has been investigated for a long time and researchers have been attempting to enhance the growth rate of high-quality gem diamond infinitely. However, it has been found according to previous research results that the quality of diamond is debased with the increase of growth rate. Thus, under specific conditions, the growth rate of high-quality diamond cannot exceed a limited value that is called the limited growth rate of diamond. We synthesize a series of type Ib gem diamonds by temperature gradient method under high pressure and high temperature （HPHT） using the as-grown {100} face. The dependence of limited growth rate on growth conditions is studied. The results show that the limited growth rate increases when synthetic temperature decreases, also when growth time is prolonged.     

In Situ Observation of Skeletal Shape Transition during BaB2O4 Crystal Growth in High-Temperature Solution

The transition from a fiat solid-liquid interface to a skeletal shape during BaB2O4 （BBO） single crystal growth in Li2B4O7 flux is observed in real time by an optical high-temperature in-situ observation system. The movement of crystal step is also investigated. The observation results demonstrate that the steps propagate along and parallel to the fiat interface when the crystal size is small. Nevertheless, they will ‘bend＇ close to the face centre if the crystal size becomes greater. Atomic force microscopy reveals that more deposition places near the face centre give rise to the bending of advancing steps and thus the formation of a vicinal interface structure. Measurements of step velocity show that the velocity keeps nearly constant at different moments for one specific step, whereas the step on a newly formed layer advanced faster than that on a previously formed one when the crystal size is larger than 210μm or so. Thus interracial morphological instability occurs and a skeletal interface is obtained.     

Chiral Symmetry Breaking During Growing Process of NaClO3 Crystal under Direct-Current Electric Field

We investigate the influence of dc electric field on chiral symmetry breaking during the growing process of NaClO3 crystal. Nucleation and growth of NaClO3 are completed from an aqueous solution by a fast cooling temperature technology. A pair of polarization microscopes are used to identify a distribution of chiral crystals. Experimental results indicate that the dc electric field has an effect on distribution of chirality, but the direction of the dc electric field is not sensitive to the chiral autocatalysis and selectivity, i.e. the nature convection driving by the gravity does not play an important role on a thin layer of NaClO3 solution. The experimental phenomena may be elucidated by the ECSN mechanism.     

Optical behaviour of VTE treated near stoichiometric LiNbO3 crystals

Near stoichiometric LiNbO₃ crystal wafers of thickness up to 2 mm were prepared by vapour transport equilibration technique (VTE) at various process temperatures. Crystals were characterised by measurement of the UV absorption edge, refractive index, second harmonic generation (SHG) efficiency, and conoscopy pattern analysis. The comparison of VTE treated crystals show that the blue shift in cut off wavelength occurred with the increasing process temperature (i.e. increasing Li/Nb ratio). The refractive indices were found decreasing with increasing process temperature of VTE samples. The SHG efficiency increases in the range of 1.98-2.3 times for the VTE processed samples with respected to congruent crystals. Conoscopy pattern reveals the optical homogeneity of the VTE treated crystal.     

Novel technique for hetero-epitaxial diamond film growth on cubic boron nitride from iron carbide at high temperature and high pressure

Cubic boron nitride (c-BN) crystals about 0.1–0.3 mmin dimension were treated with iron carbide powders (high purity 99%) with size of 80–100 mesh at a high temperature of 1620 K and a high pressure of 5.2 GPa. It was found that hetero-epitaxial diamond films have been grown on the c-BN from iron carbide. The formation of dia-mond films on the cubic boron nitride can be confirmed by laser Raman spectra, face scan of elements and reflective high-energy electron diffraction. It was suggested that diamond films could be epitaxially formed on the c-BN through decomposition of iron carbide. This approach provides a possible and very effective way to realize hetero-epitaxial growth of homogeneous and large-area diamond films on c-BN, which is different from the conventional technique using a chemical vapor deposition method. Received: 20 December 2000 / Accepted: 9 January 2001 / Published online: 28 February 2001     

Effect of Crucibles on Qualities of Self-Seeded Aluminium Nitride Crystals Grown by Sublimation

Self-seeded aluminium nitride （AlN） crystals are grown in tungsten and hot pressed boron nitride （HPBN） crucibles with different shapes by a sublimation method. The qualities of the AlN crystals are characterized by high-resolution transmission electronic microscopy （HRTEM）, scanning electron microscopy （SEM） and Micro-Rarnan spectroscopy. The results indicate that the better quality crystals can be collected in conical tungsten crucible.     

Effect of Carbon Source with Different Graphitization Degrees on the Synthesis of Diamond

Using three kinds of graphites with different graphitization degrees as carbon source and Fe-Ni alloy powder as catalyst, the synthesis of diamond crystals is performed in a cubic anvil high-pressure and high-temperature apparatus （SPD-6 × 1200）. Diamond crystals with perfect hexoctahedron shape are successfully synthesized at pressure from 5.0 to 5.5GPa and at temperature from 1570 to 1770K. The synthetic conditions, nucleation, morphology, inclusion and granularity of diamond crystals are studied. The temperature and pressure increase with the increase of the graphitization degree of graphite. The quantity of nucleation and granularity ofdiamonds decreases with the increase of graphitization degree of graphite under the same synthesis conditions. Moreover, according to the results of the M6ssbauer spectrum, the composition of inclusions is mainly Fe3 C and Fe-Ni alloy phases in diamond crystals synthesized with three kinds of graphites.     

Hetero-Epitaxial Diamond Single Crystal Growth on Surface of cBN Single Crystals at High Pressure and High Temperature

We report a new diamond synthesis process in which cubic boron nitride single crystals are used as seeds, FesoNi20 alloy powder is used as catalyst/solvent and natural flake-like graphite is used as the carbon source. The samples are investigated using laser Raman spectra and x-ray diffraction （XRD）. Morphology of the sample is observed by a scanning electron microscope （SEM）. Based on the measurement results, we conclude that diamond single crystals have grown on the cBN crystal seeds under the conditions of high temperature 1230℃ and high pressure 4.8 GPa. This work provides an original method for synthesis of high quality hereto-semiconductor with cBN and diamond single crystals, and paves the way for future development.     

Undercooling and Unidirectional Solidification of CuNi Alloy Melts

Cylinder-shaped CusoNi20 alloy melt is undercooled and solidified by the combination of the electromagnetic levitation technique and the flux treatment method. Nearly constant temperature gradient of 8-10 K/cm is realized for the cylindrical melts with differen~ undercooling levels at the bottom ends. The experimental results reveal that with the increase of the undercoo]ing of the melts from 35 to 220 K, the microstructures undergo transition from coarse dendrites to granular grains, unidirectional dendrites, and finally to equiaxed grains.     

Structural Feature and Solute Trapping of Rapidly Grown Ni3Sn Intermetallic Compound

The rapid dendritic growth of primary Ni3Sn phase in undercooled Ni-30.9%Sn-5%Ge alloy is investigated by using the glass fluxing technique. The dendritic growth velocity of Ni3Sn compound is measured as a function of undercooling, and a velocity of 2.47m/s is achieved at the maximum undercooling of 251 K （0.17TL）. The addition of the Ge element reduces its growth velocity as compared with the binary Ni75Sn25 alloy. During rapid solidification, the Ni3Sn compound behaves like a normal solid solution and it displays a morphological transition of ＂coarse dendrite-equiaxed grain-vermicular structure＂ with the increase of undereooling. Significant solute trapping of Ge atoms occurs in the whole undercooling range.     

HPHT Synthesis of Different Shape Coarse-Grain Diamond Single Crystals

Synthesis of coarse-grain diamond crystals is studied in a China-type SPD6× 1670T cubic high-pressure apparatus with high exact control system. To synthesize high quality coarse-grain diamond crystals, advanced indirect heat assembly, powder catalyst technology and optimized synthesis craft are used. At last, three kinds of coarse- grain diamond （about 0.85 mm） single crystals with hexahedron, hex-octahedron and octahedron are synthesized successfully under HPHT （about 5.4 GPa, 1300-1450℃）. The growth characters of different shape crystals are discussed. The results and techniques might be useful for the production of coarse-grain diamonds.     

Single-crystal growth of MnOOH and beta-MnO2 microrods at lower temperatures

Single-crystal MnOOH microrods were prepared hydrothermally by reducing KMnO₄ with NH₄Cl at 150 °C for 24 h. After the subsequent heat treatment of the as-prepared MnOOH microrods at 350 °C for 10 h in air, single-crystal beta-MnO₂ microrods were obtained, which retained the similar morphologies of MnOOH microrods. The products were characterized by powder X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), and transmission electron microscopy (TEM). The influences of different reductants, the molar ratio between reaction materials, and temperature on the morphology and phase of the final products under hydrothermal conditions are discussed. The reaction temperature and reductant NH₄Cl were crucial factors for the formation and morphologies of MnOOH microrods. Based on the experimental results and MnOOH crystal structure, a possible formation mechanism has been proposed on the growth of MnOOH microrods.     

Fabrication of light-emitting porous hydromagnesite with rosette-like architecture

Porous hydromagnesite with rosette-like morphologies has been synthesized at 100 °C by a convenient hydrothermal method with the absence of additives or organic surfactants. The hydromagnesite particles are spherical with a diameter of about 250 μm. The thermal behavior of the product has been investigated by TGA-DTA technique, whilst the decomposition mechanism was confirmed by in situ high temperature X-ray diffraction analysis. The as-prepared hydromagnesite was found to have a photoluminescent emission at about 448 nm.     

Preparation of Mn5Si3 nanocages and nanotubes by molten salt flux

Mn₅Si₃ nanocages and nanotubes were successfully synthesized by molten salt flux reaction at 650 °C. The samples were characterized with X-ray powder diffraction and transmission electron microscopy. The influence of the reactants molar ratio of MnCl₂ to Mg₂Si and reaction temperature on the phases and morphologies of the products were discussed. The possible mechanism of forming Mn₅Si₃ nanocages and nanotubes is discussed.     

A study of growth mechanism of KDP and ADP crystals by means of quantum chemistry

Impurity adsorption, crystal growth by adsorption of growth unit and step-pinning mechanism of metal ion adsorption were investigated for potassium dihydrogen phosphate (KDP; KH₂PO₄) and ammonium dihydrogen phosphate (ADP; NH₄H₂PO₄) by quantum chemistry. In this study, the ideal crystal morphologies, the growth unit and the crystal surface with and without metal ions were calculated and analyzed by using electrostatic property. It is found that the computational results based on electrostatic potential distribution can account for the observed behaviours on KDP and ADP crystal growth.     

The preparation of large spherical iron single crystals

A technique, based on the strain-anneal method, for growing iron single-crystal rods of 10 mm diameter is described. The crystals were studied by tensile tests and subsequently used for preparing by spark-cutting spherical specimens of 9 mm diameter suitable for neutron transmission work.     

Atom force microscopy study on HTHP as-grown diamond single crystals

For understanding the mechanism of diamond growth at high temperature–high pressure (HTHP) from a metallic catalyst–graphite system, it is of great interest to perform atomic force microscopy (AFM) experiments, which provide a unique technique different from that of normal optical and electronic microscopy studies, to study the topography of HTHP as-grown diamond single crystals. In the present paper, we report first AFM results on diamond single crystals grown from a Fe-Ni-C system at HTHP to reveal the growth mechanism of diamond single crystals at HTHP. AFM images for as-grown diamond samples show dark etch pits on the (111) surface, indicating dislocations. Some fine particles about 100–300 nm in dimension were directly observed on the (100) diamond surface. These particles are believed to have been formed through transition of graphite to diamond under the effect of the catalyst and to have been transported to the growing diamond surface through a metallic thin film by diffusion. The roughness of the (100) diamond surface is found to be about several tens of nanometers through profile analysis. The diamond growth at HTHP, in a sense, could be considered as a process of unification of these fine diamond particles or of carbon-atom-cluster recombination on the growing diamond crystal surface. Successive growth interlayer steps on the (111) diamond surface were systemically examined. The heights of the growth interlayer steps were measured by sectional analysis. It was shown that the heights of the growth interlayer steps are quite different and range from about 10 to 25 nm. The source of the interlayer steps might be dislocations. The diamond-growth mechanism at HTHP could be indicated by the AFM topography of the fine diamond particles and the train-growth interlayer steps on the as-grown diamond surfaces. Received: 29 March 2001 / Accepted: 20 August 2001 / Published online: 2 October 2001     

Characterization of a growth-front interface in a HPHT-grown diamond crystal by transmission electron microscopy

The growth-front interface of a diamond single crystal, which was grown from the Fe-Ni-C system under high pressure and high temperature (HPHT), has been directly observed by transmission electron microscopy (TEM) for the first time. The presence of a cellular interface suggests that the diamond is grown from solution and there exists a narrow supercooling zone in front of the solid–liquid interface. Diamond-growth parallel layers were also found, which indicates that the diamond grows from solution layer by layer. It provides direct evidence that the diamond is synthesized through graphite dissolution and transformation to subcritical diamond particles in a molten catalyst, diamond subcritical particle connection to form diamond clusters, diffusion of the diamond clusters to the growing diamond, and unification of the diamond clusters on the growing diamond crystal. Received: 17 July 2000 / Accepted: 27 October 2000 / Published online: 10 January 2001