高电子迁移率GaAs／Al_xGa_（1－x）As二维电子气（2DEG）异质结结构参数优化研究

本文采用三角附近似，考虑了ＧａＡｓ／ＡｌｘＧａ（１－）ｘＡｓ二维电子气（２ＤＥＧ）异质结中七种主要的散射机制，计算了２ＤＥＧ电子迁移率与隔离层厚度（ｄ）和Ａｌ组分（ｘ）的关系，对ＧａＡｓ／ＡｌｘＧａ（１－ｘ）ＡＳ异质结的结构参数进行了优化分析．就作者所知，本文首次计算了２ＤＥＧ电子迁移率与Ａｌ组分ｘ的关系，得到了与实验规律一致的结果．     

HEMT的一维I－V参数提取

自从Ｍｉｍｕｒａ等人１９８０年首次研制出了第一只高电子迁移率晶体管（ＨＥＭＴ），其优越的电子传输性能备受注目，可望在超高速数字电路和逻辑集成电路中得到广泛应用。本文采用Ｘｉａ等人提出的三段速－场公式，在考虑了３００Ｋ时场相关迁移率、沟道长度调制效应以及串联源、漏电阻等效应的基础上，又加入了Ａｌ＿ｘＧａ＿（ａｌ－ｘ）Ａｓ的组分ｘ的调制效应，以适应能带工程和高性能电路的需要；推导并求解ｘ＞０．３的Ａｌ＿ｘＧａ＿（１－ｘ）Ａｓ／ＧａＡｓＨＥＭＴ的直流Ｉ－Ｖ特性。计算结果与理论值符合良好。     

高电子迁移率GaAs／AlxGa1—xAs二维电子气（2DEG）异质结结构参数优…

本文采用三角阱近似，考虑了ＧａＡｓ／ＡｌｘＧａ１－ｘＡｓ二维电子气（２ＤＥＧ）异质结中七种主要的散射机制，计算了２ＤＥＧ电子迁移主经与隔离层厚度（ｄ）和Ａｌ组分（ｘ）的关系，对ＧａＡｓ／ＡｌｘＧａ１－ｘＡｓ异质结的结构参数进行了优化分析。就作者所知，本文首次计算了２ＤＥＧ电子迁移率与Ａｌ组分ｘ的关系，得到了与实验规律一致的结果。     

MBE生长轻掺硅GaAs材料光荧光谱杂质特性研究

采用低温光荧光谱测试方法，研究了ＭＢＥ生长的轻掺硅ＧａＡｓ材料的杂质特性，并结合Ｈａｌｌ测量结果，讨论了ＭＢＥ关键生长条件Ⅴ／Ⅲ束流比等对Ｓｉ在ＧａＡｓ中掺杂特性的影响，研究表明掺杂元素Ｓｉ在ＧａＡｓ中起两性（施主或受主）杂质作用，适当提高Ⅴ／Ⅲ束流比可以抑制Ｓｉ的自补偿效应，从而减小载流子的补偿度，进一步提高迁移率。通过优化生长条件，本实验已获得了杂质浓度小于１０１２ｃｍ－３，７７Ｋ下迁移率大于１．６×１０５ｃｍ２／Ｖ·ｓ的高纯、高迁移率ＧａＡｓ材料。     

InP基InAlAs—InAs HEMT

对ＩｎＡｓ沟道ＩｎＡｌＡｓ－ＩｎＡｓ高电子迁移率晶体管材料及器件的设计和器件制作工艺进行了研究，器件样品性能良好，１μｍ栅长ＩｎＡｌＡｓ－ＩｎＡｓ ＨＥＭＴ器件的最大跨导３００Ｋ时达到２５０ｍＳ／ｍｍ。这是国内首次研制成功的ＩｎＡｓ沟道ＨＥＭＴ器件。     

InP基InAlAs-InAs HEMT

对ＩｎＡｓ沟道ＩｎＡｌＡｓ－ＩｎＡｓ高电子迁移率晶体管材料及器件的设计和器件制作工艺进行了研究，器件样品性能良好，１μｍ栅长ＩｎＡｌＡｓ－ＩｎＡｓＨＥＭＴ器件的最大跨导３００Ｋ时达到２５０ｍＳ／ｍｍ。这是国内首次研制成功的ＩｎＡｓ沟道ＨＥＭＴ器件。     

非掺SI—GaAs单晶热处理的研究

采用闭管Ａｓ气氛保护高－低－中温热处理方法进行非掺ＳＩ－ＧａＡｓ单晶热处理的研究，结果表明晶体的科技司有明显的改善，一般晶体的迁移率可提高一倍以上，在Φ３英寸非掺ＳＩ－ＧａＡｓ单晶研究中，其晶体的电阻率不均匀性≤１５％，ＥＬ２ＲＳＤ≤５％，ＰＬ－Ｍａｐｐｉｎｇ≤９％。     

AlxGa1—xAsl和GaAs材料的物理参数模型

本文较系统和全面地总结了ＧａＡｓ和ＡｌｘＧａ１－ｘＡｓ材料的物理参数模型，包括介电常数、能带参数、载流子迁移率以及复合机制和寿命等，给出了易于应用的数学公式，其中ＡｌｘＧａ１－ｘＡｓ重掺杂能带窄变公式为本文首次推导。这些物理参数模型对于ＡｌｘＧａ１－ｘＡｓ／ＧａＡｓ异质结器件的研究有着十分重要的意义。     

非掺SI-GaAs单晶热处理的研究

采用闭管Ａｓ气氛保护高－低－中温热处理方法进行非掺ＳＩ－ＧａＡｓ单晶热处理的研究，结果表明晶体的特性有明显的改善，一般晶体的迁移率可提高一倍以上，在Φ３英寸非掺ＳＩ－ＧａＡｓ单晶研究中，其晶体的电阻率不均匀性≤１５％；ＥＬ２ＲＳＤ≤５％；ＰＬ－Ｍａｐ－ｐｉｎｇ≤９％。     

MBE生长轻掺Si高迁移率GaAs材料的杂质补偿特性研究

本文报道了用ＭＢＥ生长轻掺Ｓｉ高迁移率ＧａＡｓ材料的杂质补偿特性实验研究．已得到７７Ｋ温度下迁移率为１６．２e４ｃｍ２／（Ｖ·ｓ）的ＧａＡｓ材料．样品的Ｈａｌｌ测量结果表明：在较低的杂质浓度范围（１e１３ｃｍ－３＜ｎ＜１e１５ｃｍ－３）内，在大体相同的生长温度（５９０℃左右）下，选择适当的生长速率Ｇｒ会增强对浅受主杂质的抑制作用，同时也会抑制Ｓｉ的自补偿效应，减小杂质的补偿度Ｎａ／Ｎｄ之值，从而提高ＭＢＥ外延ＧａＡｓ材料的迁移率．     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks     

Call for Papers—Feature Topic,Vol.12,No.7,2015

正Information Centric Networking Information-Centric Networking(ICN) is an emerging direction in Future Internet architecture research,gaining significant tractions among academia and industry.Aiming to replace the conventional host-to-host communication model by a data-centric model,ICN treats data content as the first     

JOURNAL OF ELECTRONICS(CHINA)

正~~     

NEXT GENERATION WIRELESS NETWORKS–ESPECIALLY THE USE OF MILLI-MICROWAVE BANDS

The global bandwidth shortage of wireless communications has motivated the exploration of the naillimeter wave （ram-wave） frequency spectrum for the next generation wireless communications. Recent advances in RF CMOS technology and high speed baseband signal processing technologies have enabled tile extensive research and development of turn-wave wireless communications. The multi gigabit per second data rate of ram-wave system will lead to applications in many important scenarios, such as WPAN, WLAN,back-haul for cellular system. And the frequency bands include 28 GHz, 38 GHz, 45GHz, 60GHz, E-BAND and even beyond 100 GHz. The propagation and the imitation of the RF circuits design in these frequency bands make the directional antennas be inevitable for mm-wave communications.