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1.
泡沫微晶玻璃的研究进展   总被引:1,自引:0,他引:1  
文章介绍了泡沫微晶玻璃的性能及应用,综述了泡沫微晶玻璃的研究进展,并对泡沫微晶玻璃的发展方向做了展望。  相似文献   

2.
泡沫微晶玻璃的研究进展   总被引:2,自引:0,他引:2  
概述了泡沫微晶玻璃的性能及应用,综述了泡沫微晶玻璃的研究进展,并对泡沫微晶玻璃的发展方向进行了展望.  相似文献   

3.
泡沫微晶玻璃的研究进展   总被引:2,自引:1,他引:2  
概述了泡沫微晶玻璃的性能及应用,综述了泡沫微晶玻璃的研究进展,并对泡沫微晶玻璃的发展方向进行了展望。  相似文献   

4.
微晶玻璃   总被引:2,自引:0,他引:2  
邱关明 《特种玻璃》1991,8(1):30-35
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5.
微晶玻璃   总被引:5,自引:0,他引:5  
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6.
冯明良 《玻璃》1989,(2):32-34
本文简介了几种近年来新开发的微晶玻璃新材料,如高强度、高韧性微晶玻璃,表面高压缩增强微晶玻璃,纤维增强微晶玻璃复合材料,氟云母微晶玻璃柔性无机膜,发光透明微晶玻璃,核废料固化用微晶玻璃,生体修补用微晶玻璃及微晶玻璃建筑材料等.  相似文献   

7.
微晶玻璃的增强   总被引:1,自引:0,他引:1  
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8.
本文介绍光微晶玻璃新材料制备方法、产品性能、用途及应用意义。  相似文献   

9.
高强粉煤灰微晶玻璃   总被引:2,自引:0,他引:2  
采用正交试验方法研究了CaO-MgO-Al2O3-SiO2系统中粉煤灰微晶玻璃的主晶相,用X射线衍射仪(XRD)和扫描电镜(SEM)分别对材料的物相组成和显微结构进行了研究。结果表明,粉煤灰微晶玻璃的主晶相为透辉石[CaMg(Si2O6)],晶体形貌呈颗粒状,晶粒尺寸约1μm,三点抗弯强度高达196.81MPa。  相似文献   

10.
11.
Enhancing the efficiency in energy storage capacitors minimizes energy dissipation and improves device durability. A new efficiency-enhancement strategy for antiferroelectric ceramics, imposing relaxor characteristics through forming solid solutions with relaxor compounds, is demonstrated in the present work. Using the classic antiferroelectric (Pb0.97La0.02)(Zr1-x-ySnxTiy)O3 as model base compositions, Bi(Zn2/3Nb1/3)O3 is found to be most effective in producing the “relaxor antiferroelectric” behavior and minimizing the electric hysteresis. Specifically, a remarkable energy storage efficiency of 95.6% (with an energy density of 2.19 J/cm3 at 115 kV/cm) is achieved in the solid solution 0.90(Pb0.97La0.02)(Zr0.65Sn0.30Ti0.05)O3–0.10Bi(Zn2/3Nb1/3)O3. The validated new strategy, hence, can guide the design of future relaxor antiferroelectric dielectrics for next generation energy storage capacitors.  相似文献   

12.
Barium titanate ceramic is frequently used as a ferroelectric material and can be applied in the pulse power field in energy storage devices. Its properties, including dielectric, ferroelectric, and energy storage properties, can be significantly improved through doping. In this work, we prepared a series of (1-x)Ba0.65Sr0.245Bi0.07TiO3-xZnO (x = 0.005, 0.01, 0.02, 0.03) lead-free bulk relaxor ferroelectric ceramics by a traditional die-pressing processing route. The uniformity of the grain sizes for these ceramics was improved, and the grains were refined when a certain amount of ZnO was introduced into BaTiO3-based ceramics. In addition, the breakdown strength was improved in the case where the relaxor behavior was not significantly improved. It should be noted that the sample doped with 0.02 mol Zn showed the maximum room-temperature storage density (1.51 J/cm3) at the largest electric field strength (210 kV/cm). At the same time, this ceramic exhibited good stability to temperature (60–150 °C) and frequency (10–100 Hz) variations, as well as fantastic fatigue resistance (10,000 charge-discharge cycles). This paper presents in-depth studies of the structure, morphology, electrical properties, and energy storage performance of ZnO-modified BaTiO3-based ceramics.  相似文献   

13.
Piezoceramics with composition (1–z) [Bi0.5(Na0.84K0.16)0.5TiO3]0.96–0.04SrTiO3–zLiTaO3 (z = 0.00–0.030) were formulated by ordinary firing process following by rapid quenching treatment. Effect of LiTaO3 on the structural, electrical and energy-storage properties were analyzed. For the composition with molar ratio 0.025, room temperature large-field piezoelectric coefficient (Smax/Emax = d33*) of 885 pm/V at 3.6 kV/mm was recorded. Furthermore, for compositions z = 0.025 and 0.030, broad temperature stable dielectric constants and low losses from ~135 to 350 °C with a small variation of ± 15% was observed. Additionally, the energy density for z = 0.025 was ~0.60 J/cm3 in the broader temperature range of 75–125 °C, along with the energy-storage efficiency of greater than 70%. These observations suggest that the studied piezo-material compositions are promising for the ceramic actuators and capacitor applications.  相似文献   

14.
Ceramic-based capacitors for energy storage devices require simultaneously high energy density and efficiency. Achieving high electric breakdown field based on linear dielectrics is crucial. Here, A-site Sm3+ doped perovskite Ca1-1.5xSmx0.5xTiO3 ceramics with introduced A-site vacancies (VA) were prepared. All Ca1-1.5xSmx0.5xTiO3 ceramics crystallize in an orthorhombic structure, with lattice constants a, b, and c linearly decreased. As a result of Sm3+ dopants and VA, the grain size decreased while the ceramics’ density was improved. The permittivity decreases from 176 (x = 0) to 135 (x = 0.1), but tanδ is effectively constrained (~10?4). What’s more, the dielectric breakdown strength is significantly improved from 429 kV/cm (x = 0) to 547 kV/cm (x = 0.1) with dielectric linearity is maintained. The optimum energy storage density of 2 J/cm3 (x = 0.02) with ultrahigh energy efficiency of over 93.7 % is achieved, which are superior to many existing linear dielectrics and relaxor ferroelectrics. This work confirms the energy-storage enhancement through chemical modifications and microstructural engineering.  相似文献   

15.
In this work, [(Bi1-xLax)0.5Na0.5]0.94Ba0.06(Ti1-5y/4Nby)O3 ceramics have been developed by the dual-substitution of La3+ for Bi3+ and Nb5+ for Ti4+ and prepared by an ordinary sintering technique. All ceramics can be well-sintered at 1200 °C. The addition of La3+ and Nb5+ reduces the grain size and improve the dielectric breakdown strength of the ceramics; moreover, after the introduction of La3+ and Nb5+, the remanent polarization of the ceramics is significantly reduced, while the maximum polarization remains the same large value as that of the ceramic without the doping of La3+ and Nb5+. As a result, high energy storage density and discharge efficiency are achieved at x/y = 0.07/0.02, giving the large storage density of 1.83 J/cm3 and high discharging efficiency of 70%. The present work presents a feasible strategy to develop energy storage materials based on perovskite ferroelectrics by the partial substitutions in the A and B sites.  相似文献   

16.
In this work, antiferroelectric Pb1-xCaxZrO3 (PCZ) thin films with different concentrations of Ca2+ were prepared by chemical solution deposition, and the effects of Ca2+ concentration on the antiferroelectric properties and energy storage performance were investigated. The results show that the optimal Ca2+ concentration in the PCZ thin films is x = 0.12 for electric properties and energy storage performance. The recoverable energy storage density and energy storage efficiency is 50.2 J/cm3 and 83.1 % at 2800 kV/cm, which is 261 % and 44.8 % higher than those of the PbZrO3 (PZ) films. These effects are attributed to the enhancement of stability of antiferroelectric phase, diffuseness in the field-induced phase transition and electric breakdown strength by Ca2+-doping in the PZ films. Our results demonstrate that doping an appropriate amount of Ca2+ ions in antiferroelectric thin films is an effective way to improve their energy storage performance.  相似文献   

17.
Bi0.5Na0.5TiO3 (BNT)-based ferroelectrics have received more and more attention due to their environment-friendliness and large maximum polarization. Herein, the enhanced energy-storage properties of BNT-based ceramics were successfully prepared by introducing multi-ions (La3+, K+, Al3+, Nb5+, Zr4+) to improve the breakdown strength and simultaneously suppress the remnant polarization. An excellent discharge energy-storage density (Wd) of 3.24 J cm−3 and a high energy-storage efficiency (η) of 82 % under 200 kV cm-1 have been recorded for Bi0.44La0.06(Na0.82K0.18)0.5Ti0.90(Al0.5Nb0.5)0.08Zr0.02O3 ceramic. Meanwhile, the outstanding thermal stability with Wd of 1.84–1.96 J·cm−3 were also achieved in 25−125 °C at 140 kV cm-1. More importantly, piezoresponse force microscopy reveals that the threshold voltage for inducing long range order enhances while the stability of polar nanoregions (PNRs) on the nanoscale decreased with the increase of La doping amount, leading to more linear polarization behavior and higher energy-storage properties. These results promote the practical applications of BNT-based ferroelectrics in advanced pulsed power systems.  相似文献   

18.
Barium sodium niobate (BNN) glass ceramics were successfully fabricated with controllable crystallization by technology for heating processing and the effects of crystallization temperatures on phase evolution, microstructure, dielectric properties and breakdown strength were investigated systematically. In addition, the empirical power-law dependence of breakdown strength on thickness (Ebd-n) was confirmed in BNN glass-ceramic system with an exponent n of 0.21. Based on the results, the BNN glass ceramic crystallized at 800?°C presents a remarkable breakdown strength (BDS) of 2322?kV/cm with the tested thickness of 30?μm, and the highest energy density of 16.6?J/cm3 was achieved.  相似文献   

19.
Although tremendous achievements have been made in enhancing recoverable energy storage density (Wrec) of lead-free dielectric ceramics for electrical energy storage applications in recent years, these ceramics with high Wrec still have two disadvantages: complex chemical composition and difficult preparation process. In this work, we selected NaNbO3 (NN)-based ceramics as base materials and used Bi2O3 as a sintering aid to reduce porosity and enhance dielectric breakdown strengths. Encouragingly, high Wrec, simple chemical composition and facile preparation process were simultaneously realized in 0.77NaNbO3-0.23BaTiO3 (0.77NN-0.23BT) ceramics. A large Wrec of 1.5 J cm?3 at 175 kV cm?1 and excellent thermal stability (variation of Wrec < 15% over the temperature range of 20?140 °C) were simultaneously achieved in 0.77NN-0.23BT ceramics. More importantly, this work could bring out the development of a series of NN-based ceramics for electrical energy storage in the future such as NN-ABO3 (A = Ca and Sr; B = Ti and Zr).  相似文献   

20.
Due to advances in electronic device integration, miniaturization, and performance requirements, dielectric materials with a high energy storage density are required. Here, new BiMg0.5Ti0.5O3 lead-free energy storage thin films with excess Mg (i.e., nominal BiMgyTi0.5O3, with y = 0.50-0.62) were deposited on Pt/Ti/SiO2/Si substrates by sol-gel and spin-coating methods. The introduction of excess Mg can obviously increase the dielectric breakdown strength of thin films due to the appearance of an amorphous phase. The maximum recoverable energy storage density increased from 26 J/cm3 at y = 0.50 to 44.1 J/cm3 at y = 0.56. Furthermore, the dielectric films exhibited excellent thermal stability of the energy storage density from 30 °C to 100 °C, indicating that bismuth-magnesium-titanium films are promising candidates for next-generation lead-free energy storage capacitor applications.  相似文献   

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