双掺铈锰铌酸钾锂晶体的生长及光折变性能的研究

在铌酸钾锂(KLN)中掺进CeO2和MnCO3,采用Czchralski法首次生长CeMnKLN晶体,测试晶体的晶格常数,CeMnKLN晶体的晶格常数变小.测试晶体的吸收光谱,它的吸收边相对KLN晶体发生红移.研究晶体吸收边发生红移的原因.以二波耦合光路测试CeMnKLN晶体的指数增益系数Γ.它的指数增益系数最大值Γmax=9.2cm-1,大于KLN晶体的Γ值.     

空气中周期管阵列的声波禁带研究

本文以不锈钢管正方形排列在空气中形成的二维声子晶体为对象,使用平面波展开法计算并通过实验测试的方法,分析了该二维声子晶体的声波禁带,讨论了晶格常数对声波禁带的影响.结果表明,随着晶格常数的减小,ΓX方向禁带宽度增加,禁带上下边界频率增大.     

Ce:Eu:LiNbO3晶体制备及光折变性能

为了昨到光折变性能优良的晶体材料，在LiNbO3中掺进CeO2和Eu2O3，生长Ce:LiNbO3和Ce:Eu:LiNbO3单晶体，对晶体进行极化和氧化还原处理，并利用XRD、UV-VIS及二波耦合光路测试了晶体的晶格常数、吸收光谱、指数增益系数和响应时间。结果表明，Ce:Eu:LiNbO3晶体的晶格常数比Ce:LiNbO3晶体小，其吸收边比CeLiNbO3晶体红移更多，指数增益系数比Ce:LiNbO3晶体大，而响应时间比Ce:LiNbO3晶体的要短，Ce:Eu:LiNbO3是优良的光折变晶体材料。     

二维正方晶格钢/水声子晶体方向带隙实验研究

基于超声浸水透射技术,分别沿着二维正方晶格钢/水声子晶体第一布里渊Γ-X和Γ-M方向测试声带隙,详细分析了声子晶体Γ-X和Γ-M方向层厚和第一方向带隙稳定性的关系,进而为设计有限尺寸声带隙材料或声波器件提供重要参考依据.同时,对比了实验测得透射谱频率重合范围与平面波展开法计算完全带隙很好的吻合.     

Fe：Mn：LiNbO3晶体的生长及光学性能研究

采用坩埚下降法生长了掺杂Fe^3＋和Mn^2＋的LiNbO3单晶。晶体经极化处理后,用X-射线衍射仪测试了晶体的晶格常数,讨论了掺杂离子对晶格常数的影响。利用二渡耦合实验测试了晶体的指数增益系数、衍射效率和响应时间,结果表明：Fe：Mn：LiNbO3晶体的最大指数增益系数达到40cm^-1,Fe：Mn：LiNbO3的最大衍射效率分别为76％,二波耦合响应时间为2．5min。Fe：Mn：LiNbO3是一种性能优良的光折变晶体。     

Fe2O3的掺杂对TSSG法生长Zn:Fe:LiNbO3 晶体的结构和光折变性能的影响

本文利用TSSG方法生长了不同掺Fe2O3浓度的Zn∶Fe∶LiNbO3晶体,并对晶体进行了红外光谱、紫外光谱、晶格常数和居里温度的测试和分析.利用二波耦合实验测得的写入和擦除曲线,计算了晶体的写入时间常数、擦除时间常数和最大衍射效率.并讨论了Fe2O3的掺杂对材料结构和光折变性能的影响机制.     

Yb掺杂Ca_(1-x)R_xF_(2+x)(R=La,Gd)激光晶体的结构与光谱性能参数的研究

采用坩埚下降法生长了两个系列晶体3at%Yb:Ca_(1-x)R_xF_(2+x)(R=La,Gd;x=0,0.01,0.03,0.06,0.09),测试了晶体的XRD、拉曼光谱、吸收光谱、荧光光谱、荧光寿命。系统地研究了调剂离子La~(3+)、Gd~(3+)对Yb:CaF_2晶体晶格常数、拉曼光谱和光谱性能的影响规律,分析讨论了Yb~(3+)离子的结构与光谱性能之间的关系。研究结果表明,随着La~(3+)、Gd~(3+)掺杂浓度增加,晶体的晶格常数和拉曼半高宽都逐渐增大,这说明晶体膨胀和晶格振动模式种类增多。在3at%Yb:Ca_(1-x)La_xF_(2+x)晶体中,当调剂离子La~(3+)掺杂浓度为6at%时,具有最大吸收截面0.71×10-20 cm~2,荧光强度也最大;而在3at%Yb:Ca_(1-x)Gd_xF_(2+x)晶体中,当调剂离子Gd~(3+)掺杂浓度为3at%时,荧光强度最大,Gd~(3+)掺杂浓度为6at%时,具有最大吸收截面0.64×10~(-20) cm~2。共掺晶体相比于单掺3at%Yb:CaF_2晶体有更好的光谱参数。综上可知,通过调节La~(3+)、Gd~(3+)离子浓度,可以改变Yb~(3+)离子的结构,优化晶体的光谱性能。     

ZnAl2O4:Cr3+晶体局域结构研究

提出了新的掺杂离子局域结构畸变模型,称之为配体离子移动模型,建立了此模型下晶体微观结构与电子顺磁共振(EPR)参量之间的定量关系.首次在考虑SS(spin-spin)、SOO(spin-other-orbit)和OO(orbit-orbit)作用的基础上,采用全组态完全对角化方法,对ZnAl2O4∶Cr3+晶体的局域晶格畸变、EPR参量及其电子精细光谱进行了系统的研究,结果表明,Cr3+离子掺入ZnAl2O4晶体后,O2-离子在氧平面上向远离[111]轴的方向移动了(0.01777±0.00007)nm.从而成功地解释了ZnAl2O4∶Cr3+晶体的EPR参量.同时研究也表明,OO磁相互作用并不引起新的能级分裂,只使能级产生移动,能级移动达到10cm-1的量级,但对ZFS参量的贡献甚微.     

Mg:Er:LiNbO3晶体波导基片抗光损伤的研究

以Czochralski技术生长Mg(2mol%)Er(1mol%)LN,Mg(4mol%)Er(1mol%)LN,Mg(6mol%)Er(1mol%)LN,Mg(8mol%)Er(1mol%)LN和Er(1mol%)LN晶体.测试了MgErLiNbO3晶体的红外光谱,Mg(2mol%)ErLN,Mg(4mol%)ErLN OH-吸收峰在3486cm-1附近,Mg(6mol%)ErLN和Mg(8mol%)ErLN晶体OH-吸收峰移动到3535cm-1附近,对MgErLN晶体OH-吸收峰移动机理进行研究.采用m线法测试MgErLN晶体光损伤阈值.Mg(6mol%)Er(1mol%)LN和Mg(8mol%)ErLN晶体光损伤阈值比ErLN晶体提高两个数量级以上.Mg(2mol%)ErLN和Mg(4mol%)ErLN晶体比Er(1mol%)LN晶体提高一个数量级.     

高掺镁LiNbO3晶体抗光折变性能研究

在LiNbO3中掺进MgO以提拉法生长Mg(1mol%)LN,Mg(3mol%)LN,Mg(5mol%)LN,Mg(7mol%)LN,和Mg(9mol%)LN晶体.改进晶体生长工艺条件,解决了在生长中出现的脱溶,散射颗粒,生长条纹等缺陷.生长出高质量高掺镁LiNbO3晶体.测试MgLiNbO3晶体的红外光谱,当Mg2+的浓度达到或超过阈值浓度的MgLiNbO3晶体,OH-吸收峰移到3535cm-1,晶体抗光损伤能力比LiNbO3晶体提高两个数量级以上.测试MgLiNbO3晶体的倍频性能(相位匹配温度,倍频转换效率)MgLiNbO3晶体的相位匹配温度随Mg2+浓度的增加而改变,Mg(5mol%)LN,晶体的相位匹配温度达到116℃,Mg(9mol%)LN晶体在室温附近.     

Phase Formation During Nonisothermal Decomposition of the Freeze-Dried Bi:Pb:Sr:Ba:Ca:Cu = 1.8:0.4:1.8:0.2:1.2:2.0 Complex Nitrate Powder

Nitrate powder with cation composition Bi:Pb:Sr:Ba:Ca:Cu = 1.8:0.4:1.8:0.2:1.2:2.0 was obtained by spray-frozen, freeze-drying technique. Samples of the nitrate precursor powder were placed in a heated furnace (heating rate 100°C/min) and extracted in air when temperature of the powdered samples attained values of 439, 495, 550, 600, 640, 647, 717, 766, 814, and 850°C. Samples have been investigated by X-ray diffraction analysis. The obtained data allow us to propose and discuss phase formation and decomposition processes and reactions that occur in non-isothermal conditions at different temperatures during thermal decomposition of the nitrate powder.     

Flash-lamp-pumped Ho:Tm:Cr:YAG and Ho:Tm:Er:YLF lasers: modeling of a single, long pulse length comparison

Two methods of producing the long pulse lengths that promote efficient extraction of energy from low-gain, quasi-four-level lasers are analyzed. A long pulse length output can mitigate laser-induced damage effects and can be generated in quasi-four-level lasers by two disparate methods. One method utilizes Q-switching techniques in resonators designed to extend the pulse length and another utilizes the first pulse in a relaxation oscillation pulse train. Models for quasi-four-level lasers are derived here taking into account the nonnegligible thermal population of the lower laser level. Closed-form expressions are derived for both modes of operation of quasi-four-level laser systems so the parametric dependencies of both forms of operation become obvious, allowing facile comparison. In addition, a combined absorption and quantum efficiency, germane for flash-lamp pumping, is calculated for both Cr and Er sensitizers. Although the former has the advantage of broad absorption bands, the latter has the advantage of a quantum efficiency approaching 3.     

Flash-lamp-pumped Ho:Tm:Cr:YAG and Ho:Tm:Er:YLF lasers: experimental results of a single, long pulse length comparison

Flash-lamp-pumped, room-temperature Ho:Tm:Cr:YAG and Ho:Tm:Er:YLF are compared for single but long pulse operation, with pulse lengths of approximately 1.0 mus. Under similar operating conditions in normal-mode operation, a slope efficiency of 0.0331 was observed for Ho:Tm:Er:YLF compared with 0.0047 for Ho:Tm:Cr:YAG. For Q-switched operation, Ho:Tm:Er:YLF yielded a slope efficiency of 0.0075. In comparison, a slope efficiency of 0.0012 was obtained for Ho:Tm:Cr:YAG. Two methods of producing long pulse lengths are compared: pulse selection of normal-mode relaxation oscillations and Q-switching in a long resonator. Theoretical models developed in a companion paper for normal-mode relaxation oscillations and Q-switching in quasi-four-level solid-state lasers are in agreement with the experimental results.     

Electroluminescence of (Zn:Cd)S:Mn:Sm:Cl phosphors

The effect of field strength and frequency on electroluminescence brightness has been investigated for the binary systems (Zn:Cd)S:Mn:Cl and (Zn:Cd)S:Mn:Sm:Cl. The voltage dependence of the time averaged electroluminescent brightness shows the relation B = B_o exp ($\text{?}\text{C}\text{√}\text{v}$ and holds good over a wide range of frequencies, thus indicating that the mechanism of excitation is acceleration collision. The dependence of constants B_o and C on frequency of the applied field shows that the brightness of the electroluminescence is found to saturate at higher frequencies. It has been observed that EL peak emissions for these phosphors were found to be at 560 nm and 580 nm.     

Optical and EPR spectroscopy of Zn:Cr:ZnSe and Zn:Fe:ZnSe crystals

Optical and EPR characterization of Cr and Fe doped ZnSe crystals annealed in Zn vapor revealed a strong bleaching of the divalent state of transition metal ions. Photo induced EPR kinetics were studied in 20–80 K temperature range. Analysis of time-dependent data reveals Cr¹⁺ signal rise time decreases with increasing temperature. The non-exponential decay of Cr¹⁺ concentration were analyzed using Auger-type recombination process. The photoluminescence quantum yield of Cr²⁺ ions at ⁵E(D) → ⁵T₂(D) mid-IR transition excited via chromium ionization process was measured to be close to 100%.     

Growth of YLF:Yb:Tm:Nd for optical applications

The focus of this study is the behavior of Tm, Yb and Nd ions in the LiYF₄ (YLF) crystal. One YLF crystal was successfully grown by the Czochralski method; it was doped with 20 mol% Yb, 1.3 mol% Nd and 0.05 mol% Tm. The segregation coefficients of the dopants and lattice parameters were determined. The spectroscopic properties of samples with different amounts of Nd were obtained from absorption and emission studies.