AlxGa1-xN/GaN调制掺杂异质结能带分裂特性

通过低温强磁场下的磁输运实验，研究了AlxGa1-xN／GaN调制掺杂异质结构二维电子气(2DEG)的能带分裂性质。1．4K温度下测量的磁阻曲线当磁场强度大于5．4T时观察到的明显对应于第一子带的自旋分裂现象。用Dingle作图法得到本样品rq的大小为0．17ps。结果表明，本实验所用的调制掺杂Al0.22Ga0.78N/GaN异质结构具有较大的有效g因子g‘‘。用高2DEG浓度导致的交换相互作用加强解释了g‘‘增强效应。在磁阻测量中改变磁场方向，自旋分裂现象表现出各向异性。用异质结构界面处强的极化电场解释了自旋分裂的各向异性。     

La_(0.80)Sr_(0.05)Na_(0.15)MnO_3/xCuO复合体电输运机制及磁电阻的温度稳定性

用固相反应法制备了La0.80Sr0.05Na0.15MnO3/xCuO(x=0,0.05,0.10,0.15,0.20,0.30)二相复合体系,通过X射线衍射(XRD)图谱、电阻率-温度(ρ-T)曲线、ρ-T拟合曲线、磁电阻-温度(MR-T)曲线,研究了样品的电输运机制及磁电阻的温度稳定性。结果表明,在低温类金属区,电输运机制是自旋电子受单磁子散射作用,用ρ-T2拟合得很好;在较高温区MR-T曲线出现"压峰效应",是因为界面效应产生的非本征磁电阻占优势,本征磁电阻与非本征磁电阻迭加产生的磁电阻随温度变化不大;特别是x=0.05的样品,0.8 T磁场下在240 K~320K温区,磁电阻保持(9.9±0.4)%基本不随温度变化,在室温附近△T=80 K温区磁电阻的温度稳定性很好。     

CuO复合对La0.80Sr0.05K0.15MnO3电输运和磁电阻的影响

用固相反应法制备了(1-x)La0.80Sr0.05K0.15MnO3/xCuO(x=0.00,0.04,0.08,0.10,0.20,0.30)二相复合体。通过X射线衍射图谱、扫描电子显微镜照片检测结构,表明形成完好的钙钛矿相和CuO相,CuO分布在钙钛矿颗粒之间,形成对钙钛颗粒的包覆。通过测量零场和加场下的电阻率-温度曲线以及磁电阻-温度曲线,研究电输运性质及磁电阻效应,结果表明,CuO复合对La0.80Sr0.05K0.15MnO3电输运和磁电阻效应影响很大。在高温区出现磁电阻峰,表现出本征磁电阻特征,在低温区随温度降低磁电阻持续增大,表现出由界面引起的隧穿磁电阻特征,总的磁电阻是本征磁电阻与隧穿磁电阻的迭加,在中间温区出现磁电阻的温度稳定性。     

Na掺杂钙钛矿型锰氧化物的庞磁电阻效应及团簇玻璃态行为

研究了钙钛矿型锰氧化物La1-xNaxMnO3（x=0.1, 0.2）多晶块材的电磁输运性能和庞磁电阻（CMR）效应以及低温下的团簇玻璃态行为. 研究表明该材料具有菱形（R3C）结构, 材料的居里温度TC均在室温或室温以上, 样品的电阻率随温度变化的ρ-T曲线出现3个峰, 定义中间最高电阻峰温度为TP1, 低温电阻峰温度为TP2, 高温电阻峰温度为TP3. 综合磁化强度测量的结果, 认为TP1与居里温度TC相对应, 来源于顺磁绝缘体向铁磁金属的转变, 同时在此附近出现较大的低场室温磁电阻（LFMR）效应, TP2峰出现的原因是在此温度附近出现了相分离. 另外, 磁化强度测量观察到La0.8Na0.2MnO3低温下的团簇玻璃态行为, 其出现原因认为是随着Na＋离子掺杂量的升高, 样品中的Mn4＋离子数量增加并且Mn3＋和Mn4＋离子不均匀分布.     

钙钛矿锰氧化物(La_(1-x)Gd_x)_(0.5)Sr_(0.5)MnO_3的电磁特性

通过磁化强度和电阻的测量对多晶样品(La1-xGdx)0.5Sr0.5MnO3(x=0,0.1,0.2,0.3,0.4)的电磁特性进行了系统的实验研究。当x≤0.2时,样品显示出铁磁金属态(FMM)到顺磁绝缘态(PM I)的转变;当0.3≤x≤0.4时,金属-绝缘体转变温度Tp消失,样品显示出反铁磁绝缘态(AFM I)到顺磁绝缘态(PM I)的转变。同时随着x的增加所有样品的居里温度Tc和金属-绝缘体转变温度Tp都降低,并且在居里温度附近观测到了磁电阻效应。     

非化学计量(La0.6Dy0.1Sr0.3)1-xMnO3的电输运及MR温度稳定性机制研究

用固相反应法制备了非化学计量的(La0.6Dy0.1Sr0.3)1-xMnO3(x=0.00,0.10,0.20,0.30,0.35)系列样品,通过XRD、ρ-T曲线、MR-T曲线,研究电输运及磁电阻(MR)温度稳定性的机制。XRD检测表明,非化学计量的(La0.6Dy0.1Sr0.3)1-xMnO3在1200℃下烧结24 h,实际形成了La0.6Dy0.1Sr0.3MnO3钙钛矿相和Mn2O3相组成的二相复合体材料。电输运性质均表现出绝缘体-金属相变,ρ-T曲线高温区出现尖峰,较低温区出现"肩峰",是钙钛矿体相内双交换作用和晶界处电子自旋极化隧穿引起的电阻率共同作用的结果。MR-T表现出,在高温区出现磁电阻峰,在低温区随温度降低磁电阻持续增大,表现出低场磁电阻特征,在中间温区出现磁电阻的温度稳定性,用La0.6Dy0.1Sr0.3MnO3钙钛矿颗粒体相产生的本征磁电阻与颗粒界面效应产生的隧穿磁电阻的叠加给出解释。x=0.30的样品,0.8 T磁场下,在258 K～198 K温区,产生的磁电阻为(6.3±0.2)%。     

钙钛矿氧化物La0.65(Ca,Ba)0.35Mn1-xFexOy的磁电阻效应

本工作制备了La065(Ca,Ba)035Mn1-xFexOy(x=0～02)氧化物系列样品。发现在常温附近,含Ba样品的磁阻变化率远比相应含Ca样品的高。在x=0时,样品电阻随温度的变化曲线存在金属—半导体转换峰,随着Fe对Mn的部分替代,该转换峰向低温区移动,当替代量x达到一定程度时,在实验温区观察不到金属—半导体转换峰。磁阻效应在高铁含量时只能在低温观察到。Fe替代Mn对大磁阻效应的影响,可能主要因为:随着Mn3 被Fe3 所替代,样品La065(Ca,Ba)035Mn1-xFexOy中的铁磁相互作用受到抑制,反铁磁相互作用得到加强。     

几种非晶态合金的电子输送特性

本文利用类Kondo效应及推广的Ziman理论对非晶态FeB、FeBSiC、FeCoBSi、FeCoBSiCP电阻率随温度的变化(4.2～800K)进行了讨论。在低温区所有样品均出现低温电阻反常现象,随着温度的升高,电阻率增大且电声子散射起着重要作用。实验表明,添加类金属元素可使BeB非晶合金的热稳定性得以改善。     

基于GaN的太拉赫兹负微分电阻振荡器

在闪锌矿结构的GaN中，载流子在P能谷中反射能够引起负微分电阻效应。基于这种机制的GaNn^ nn^ 振荡器的自振荡频率在太拉赫兹范围内。从理论上仔细研究了这种振荡器内部电场畴的动态变化以及振荡频率对振荡器两端所加电场的依赖关系，并预言了利用GaN负微分电阻振荡器作为可调谐太拉赫兹源的理论可能性。     

Dy和Sm部分替代La对La0.7Sr0.3MnO3磁电行为的影响

通过对La0.7-xTxSr0．3MnO3(T=Dy，Sm)系列样品的红外透射谱，激光拉曼谱，M-T曲线和ρ-T曲线的测量，研究了该样品的磁电行为。结果发现，随着掺入量的增加，样品的顺磁-铁磁相变温度逐渐降低，磁结构从顺磁向自旋团簇玻璃态、反铁磁状态转变，样品的磁电阻迅速增加。有趣的是在较低温度下，Dy掺杂M-T曲线出现比较奇特的尖峰，而Sm掺杂M-T曲线比较变化较平坦。对Dy，Sm掺杂的作用可以用晶格效应和额外磁性的竞争来解释。     

Abnormal grain growth in bulk Cu—The dependence on initial grain size and annealing temperature

The dependence of abnormal grain growth (AGG), also termed secondary recrystallization, on annealing temperature in the range between 600 °C and 1050 °C has been observed in pure bulk Cu specimens compressed to various levels between 5 and 75 pct. There is no grain texture after annealing. The average grain size after primary recrystallization, which represents the initial grain size for secondary recrystallization during further annealing, decreases with increasing deformation and is nearly independent of the annealing temperature, in agreement with previous observations. The incubation time for AGG decreases and the number density of abnormally large grains increases with increasing deformation (hence, a decreasing initial grain size) and increasing annealing temperature. At low temperatures, most of the grain boundaries are faceted, with some facet planes probably of singular structures corresponding to cusps in the polar plots of the grain-boundary energy vs the grain-boundary normal. With increasing temperature, the grain boundaries become defaceted and, hence, atomically rough. The observed grain-growth behavior appears to be qualitatively consistent with the movement of faceted grain boundaries by two-dimensional nucleation of boundary steps. The temperature dependence appears to be consistent with roughening of grain boundaries. Before the onset of AGG, stagnant growth of the grains occurs at low rates, probably limited by slow two-dimensional nucleation of boundary steps, and, at low deformations and low annealing temperatures, the stagnant growth persists for 100 hours. The specimens with relatively small initial grain sizes (because of high deformation) show double AGG when annealed at high temperatures.     

Manifestations of dynamic strain aging in soft-oriented NiAl single crystals

The tensile and compressive properties of six NiAl-base single-crystal alloys have been investigated at temperatures between 77 and 1200 K. The normalized critical resolved shear stresses (CRSS/E) and work-hardening rates (θ/E) for these alloys generally decreased with increasing temperature. However, anomalous peaks or plateaus for these properties were observed in conventional purity (CPNiAl), Si-doped (NiAl-Si), C-doped low Si (UF-NiAll), and Mo-doped (NiAl-Mo) alloys at intermediate temperatures (600 to 1000 K). This anomalous behavior was not observed in high-purity, low interstitial material (HP-NiAl). Low or negative strain-rate sensitivities (SRS) also were observed in all six alloys in this intermediate temperature range. Coincident with the occurrence of negative strain-rate sensitivities was the observation of serrated stress-strain curves in the CPNiAl and NiAl-Si alloys. These phenomena have been attributed to dynamic strain aging (DSA). Chemical analysis of the alloys used in this study suggests that the main specie responsible for strain aging in NiAl is C but indicate that residual Si impurities can enhance the strain aging effects. The corresponding dislocation microstructures at low temperatures (300 to 600 K) were composed of welldefined cells. At intermediate temperatures (600 to 900 K), either poorly defined cells or coarse bands of localized slip, reminiscent of the vein structures observed in low-cycle fatigue specimens deformed in the DSA regime, were observed in conventional purity, Si-doped, and in Mo-doped alloys. In contrast, a well-defined cell structure persisted in the low interstitial, high-purity alloy. At elevated temperatures (≥1000 K), more uniformly distributed dislocations and sub-boundaries were observed in all alloys. These observations are consistent with the occurrence of DSA in NiAl single-crystal alloys at intermediate temperatures.     

Iron‐Rich Iron‐Titanium‐Silicon Alloys with Strengthening Intermetallic Laves Phase Precipitates

Two‐phase ternary Fe‐Ti‐Si alloys with Si contents from 2 to 16 at.% and Ti contents from 2 to 28 at.% were studied with respect to room temperature hardness, fracture strain and yield stress at room and higher temperatures up to 1150 °C. In addition oxidation was checked at temperatures between 400 and 1150 °C. The alloys are strengthened by precipitation of the stable Laves phase (Fe,Si)₂Ti which is a hard and brittle intermetallic phase. The yield stress as well as the brittle‐to‐ductile transition temperature (BDTT) increase with increasing Ti content. Yield stresses up to about 1400 MPa and BDTT between 100 °C and 600 °C with fracture strains of the order of 1 % below BDTT were achieved. The observed short‐term oxidation performance at temperatures up to 1150 °C compares favourably with that of Fe‐AI alloys with high Al contents.     

Warm Forming of Mg Sheets: From Incremental to Electromagnetic Forming

Magnesium alloys are generating interest in the automotive and aeronautic industries due to their low density and potential to reduce gross vehicular weight. However, the formability of these alloys is poor and they are very difficult to be formed at room temperature due to their strong basal texture in rolled form. In this paper, the potential of magnesium alloy sheets to be processed at warm conditions is studied for four different forming technologies: incremental forming (IF), deep drawing (DD), hydroforming (HF), and electromagnetic forming (EMF). Forming mechanisms and process window are experimentally characterized by monitoring different process parameters. Special focus is made on the influence of the forming temperature and the strain rate. Thus, experiments at temperatures from room to 523 K (250 °C) and a wide range of strain rates, between 10^?3 up to 10³ s^?1 according to each process nature and scope, are conducted. It is observed that, even the inherent forming rate range of each process vary considerably, increasing forming temperature increases formability for all of these forming processes. In the other hand, an opposing effect of the strain rate is observed between the quasi-static processes (IF, DD, and HF) and the high speed process (EMF). Thus, a detrimental effect on formability is observed when increasing strain rate for quasi-static processes, while a mild increase is observed for EMF.     

Microhardness and compressive mechanical behavior of L12 titanium trialuminides

Vickers microhardness and compressive mechanical properties of Ll₂ Al₃Ti + X intermetallics, where X = Cr, Mn, Fe, and Cu, were studied. Compressive tests were carried out at the temperature range from room temperature to 900 °C. At room temperature, both Vickers microhardness and yield strength (0.2 pct offset) decrease with increasing the long-range order parameterS. Essentially the same behavior of yield strength is observed at all compressive test temperatures up to 900 °C. In general, apparent compressive ductility (permanent deformation) increases with increasing test temperature, although with different rates, for most of the alloys, except Ll₂ Al₃Ti + Mn (high Ti), which is characterized by the lowest long-range order parameterS. Compressive ductility increases with increasing long-range order at all temperatures, but the highest rate of increase occurs at high temperatures above approximately 600 °C and the rate of increase at room temperature is minimal. At low temperatures, deformation-induced microcracks were formed in large numbers in all of the alloys studied, even in the matrix free of preexisting flaws. These microcracks can propagate catastrophically under tensile deformation conditions at a stress level barely approaching 0.2 pct offset prior to the onset of gross plastic flow, leading to a premature fracture. At high temperatures, the initiation of deformation-induced microcracks is inhibited. The mechanical behavior of L1₂ titanium trialuminides is discussed within a general framework of ductile-to-brittle transition.     

覆铜板废边角料熔炼渣熔化温度研究

覆铜板废边角料是一种具有明显“高硼低铁”特征的电子废料,为使覆铜板废边角料冶炼过程中具有合适的熔化温度,采用化学试剂配置合成了17组“高硼低铁”渣,利用RDS-2010型智能测试仪通过半球熔点法测定其熔点。对所测得数据进行了多元非线性回归分析,得到了熔化温度与熔炼渣化学组成之间的数学表达式,基于回归方程考察了FeO含量（w（Feo））、Fe₃O₄含量（w（Fe₃O₄））、Al₂O₃含量（w（Al₂O₃））、B₂O₃含量（w（B₂O₃））及钙硅比（m（Cao）/m（SiO₂））单一组分变化对熔炼渣熔点的影响规律。结果表明,回归方程预测值与实际值吻合度较高;熔化温度在熔渣组成成分范围内低于1 100 ℃,具有良好的冶炼性能;熔渣的熔化温度随着w（Fe₃O₄）、w（Al₂O₃）的增加而升高,随着w（Feo）、w（B₂O₃）、m（Cao）/m（SiO₂）的增加而下降。研究结果为电子废料的绿色回收提供数据支持。      

Creep behavior of copper-chromium <Emphasis Type="Italic">in-situ</Emphasis> composite

Creep deformation and fracture behaviors were investigated on a deformation-processed Cu-Cr in-situ composite over a temperature range of 200 °C to 650 °C. It was found that the creep resistance increases significantly with the introduction of Cr fibers into Cu. The stress exponent and the activation energy for creep of the composite at high temperatures (≥400 °C) were observed to be 5.5 and 180 to 216 kJ/mol, respectively. The observation that the stress exponent and the activation energy for creep of the composite at high temperatures (≥400 °C) are close to those of pure Cu suggests that the creep deformation of the composite is dominated by the deformation of the Cu matrix. The high stress exponent at low temperatures (200 °C and 300 °C) is thought be associated with the as-swaged microstructure, which contains elongated dislocation cells and subgrains that are stable and act as strong athermal obstacles at low temperatures. The mechanism of damage was found to be similar for all the creep tests performed, but the distribution and extent of damage were found to be very sensitive to the test temperature.     

Light-induced absorption changes in photosystem I at low temperatures

Light-induced absorption changes associated with the primary photochemical reaction and dark relaxation in Photosystem I were measured at various low temperatures. A possible temperature-dependent long-range electron tunneling process was suggested to account for the unique temperature dependence of the dark decay process. The kinetics of the light-induced absorption changes are in good agreement with the light-induced EPR changes reported earlier (Ke, B., Sugahara, K., Shaw, E.R., Hansen, R. E., Hamilton, W. D. and Beinert, H. (1974) Biochim, Biophys. Acta 368, 401--408) for the same Photosystem I subchloroplast fragment at comparable temperatures. All absorption changes between 400 and 725 nm at 86degreesK have identical kinetics. The light-minus-dark difference spectrum is very similar to that of P-700 at room temperature, with an additional prominent positive change at 690 nm. Possible contributions by P-430 to the blue and red spectral changes were discussed. It was demonstrated that the intensity of the measuring beam has a drastic effect on the light-induced absorption changes of Photosystem I at low temperatures. Various pretreatments of the Photosystem I fragments such as those that photochemically (or chemically) oxidize the primary donor or photoreduce the primary acceptor abolish the subsequent photochemical reaction. Continuous illumination of the Photosystem I fragments before and during freezing has the same effect. In the temperature range of --20 to --60degreesC, an unusual counter absorption change as well as a counter EPR change were observed.     

Sputter-induced pits on {100} nickel surfaces

Nickel (Ni⁺) ions of 180 keV energy impinging on {100} faces of nickel single crystals produce sputtered surfaces. Examination of these surfaces exposed to fluences up to 8 X 10¹⁷ ions/cm² and at temperatures between 25 °C and 750 °C reveals pits with facets parallel to the {111} and {100} crystallographic planes of the nickel. Subsurface voids also form and, when intersected by the sputtered surface, become small pits which grow with further sputtering. The pits exhibit facets that are direct extensions of facets present on the voids. The voids nucleate and grow during the initial stages of bombardment at temperatures above 600 °C but shrink beyond fluences of ~3.5 X 10¹⁷ ions/cm². Voids are not observed after bombardment at temperatures less than 600 °C. Sputtering at these lower temperatures produces no pits unless the nickel is bombarded first at higher temperatures to produce the requisite voids. Measuring the rate at which the {100} surface recedes due to sputtering provides the sputtering yield. This yield, near 3.8 atoms per Ni⁺ ion, is independent of temperature from 25 °C to 750 °C. The growth rate of the pits,i.e., the rate at which oppositely inclined {111} faces separate, is also measured. At temperatures below 350 °C, the measured growth rate matches that based on sputtering of these inclined surfaces. The rate increases with increasing temperature above 350 °C, reaching nearly tenfold its low-temperature value by 750 °C. The mechanisms causing this accelerated growth with increasing temperature are discussed and related to the migration of the point defects produced by the bombardment. Formerly Visiting Scientist, Metallurgy Department, University of Connecticut