共查询到17条相似文献,搜索用时 46 毫秒
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提出了一种新结构薄膜SOILIGBT——漂移区减薄的多沟道薄膜SOILIGBT(DRT-MCTFSOILIGB)。主要研究了其低压截止态泄漏电流在423~573K范围的温度特性。指出,通过合理的设计可以使该种新器件具有很低的截止态高温泄漏电流,很高的截止态击穿电压,足够大的正向导通电流和足够低的正向导通压降。还指出,它不仅适用于高温低压应用,而且适用于高温高压应用。 相似文献
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提出了一种新结构薄膜 SOI L IGBT——漂移区减薄的多沟道薄膜 SOI LIGBT( DRT-MC TFSOI L IGB)。主要研究了其低压截止态泄漏电流在 4 2 3~ 573K范围的温度特性。指出 ,通过合理的设计可以使该种新器件具有很低的截止态高温泄漏电流 ,很高的截止态击穿电压 ,足够大的正向导通电流和足够低的正向导通压降。还指出 ,它不仅适用于高温低压应用 ,而且适用于高温高压应用。 相似文献
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薄膜SOI材料MOSFET的高温泄漏电流 总被引:2,自引:1,他引:1
冯耀兰 《固体电子学研究与进展》1998,18(4):415-419
在对体硅MOSFET高温泄漏电流研究的基础上,深入研究了SOI材料MOSFET泄漏电流的组成、解析式及高温模拟结果,并与体硅MOSFET进行了比较,证明薄膜SOI材料MOSFET的高温泄漏电流明显减小,因而在高温领域中有着广阔的应用前景。 相似文献
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SOI-LIGBT寄生晶体管电流增益的研究 总被引:1,自引:0,他引:1
采用二维器件模拟仿真软件Tsuprem4和Medici模拟了SOI-LIGBT的n型缓冲层掺杂剂量、阳极p+阱区长度、漂移区长度以及阳极所加电压对SOI-LIGBT寄生晶体管电流增益β的影响,通过理论分析定性的解释了产生上述现象的原因和机理,并且通过实验测试结果进一步验证了分析结论的正确性。其中,n型缓冲层掺杂剂量对电流增益β的影响最为明显,漂移区长度的影响最弱。基本完成了对SOI-LIGBT寄生晶体管电流增益β主要工艺影响因素的定性分析,对于SOI-LIGBT的设计有一定的借鉴意义。 相似文献
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电力电子器件是构成电子电源设备的基础,是从事UPS供电系统的设计、研发、生产和应用的电源技术工作者应当熟悉的内容。尤其是绝缘栅双极型晶体管(IGBT)现已广泛应用于电源设备中。本刊从今年1月份起以“IGBT的原理与应用”为题开展技术讲座,以满足广大读者选好用好这类器件的需求。 相似文献
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A thick SOI LIGBT structure with a combination of uniform and variation in lateral doping profiles (UVLD) on partial membrane(UVLD PM LIGBT) is proposed.The silicon substrate under the drift region is selectively etched to remove the charge beneath the buried oxide so that the potential lines can release below the membrane,resulting in an enhanced breakdown voltage.Moreover,the thick SOI LIGBT with the advantage of a large current flowing and a thermal diffusing area achieves a strong current carrying capability and a low junction temperature.The current carrying capability(KAnode = 6 V,VGate = 15 V) increases by 16%and the maximal junction temperature(1 mW/μm) decreases by 30 K in comparison with that of a conventional thin SOI structure. 相似文献
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研究了阶梯变掺杂漂移区高压SOI RESURF(Reduce SURface Field)结构的器件几何形状和物理参数对器件耐压的影响;发现并解释了该结构纵向击穿时,耐压与浓度关系中特有的“多RESURF平台”现象。研究表明,阶梯变掺杂漂移区结构能明显改善表面电场分布,提高耐压,降低导通电阻,增大工艺容差;利用少数分区,能得到接近线性变掺杂的耐压,降低了工艺难度。 相似文献
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Mehdi Saremi Masoumeh Saremi Hamid Niazi Maryam Saremi Arash Yazdanpanah Goharrizi 《Journal of Electronic Materials》2017,46(10):5570-5576
To increase the breakdown voltage and decrease the ON resistance, a silicon-on-insulator (SOI) lateral double-diffused metal–oxide–semiconductor field-effect transistor (LDMOSFET) in which the drift region extends to the up and down oxides in a step shape is proposed. This up and down extended stepped drift SOI (UDESD-SOI) structure demonstrates a modified lateral electric field distribution with additional peaks as well as a decrease of the usual peaks near the drain and gate. Two-dimensional (2D) simulations were used to compare the characteristics of the proposed UDESD-SOI structure with those of other structures, viz. down extended stepped drift SOI (DESD-SOI), up extended stepped drift SOI (UESD-SOI), and conventional SOI (C-SOI). Under the same conditions, the breakdown voltage of the UDESD-SOI structure was nearly 35%, 117%, and 318% higher compared with the DESD-SOI, UESD-SOI, and C-SOI structure, respectively. To determine the optimum parameters for the UDESD-SOI structure leading to the highest breakdown voltage, a comparative study was performed to investigate the effect of the doping concentration in the drift region, buried oxide (BOX) thickness, and thickness of up and down extended steps (T 1 and T 2, respectively). In addition, the drain current (ON resistance) of the UDESD-SOI structure was found to be 13%, 43%, and 229% higher (16%, 65%, and 257% lower) than the values for the DESD-SOI, UESD-SOI, and C-SOI structure, respectively. 相似文献
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本文提出了一种具有高k介质阶梯变宽度结构的新型的SOI LDMOS器件,该器件通过在漂移区内引入介质区域使得漂移区的宽度呈阶梯变化.借助三维器件仿真软件DAVINCI对其势场分布及耐压特性进行了深入分析.首先,阶梯变宽度结构能够在漂移区内引入新的电场峰值来优化势场分布,提高击穿电压.其次,采用高k材料作为侧壁介质区域可以进一步优化漂移区内势场分布,并提高漂移区浓度来降低导通电阻.结果表明,与常规结构相比,新器件的击穿电压可提高42%,导通电阻可降低37.5%,其FOM优值是常规器件的3.2倍. 相似文献
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具有倾斜表面漂移区的SOI LDMOS的工艺设计 总被引:1,自引:0,他引:1
对一种具有倾斜表面漂移区SOI LDMOS的制造方法进行了研究,提出采用多窗口LOCOS法形成倾斜表面漂移区的新技术;建立了倾斜表面轮廓函数的数学模型,并开发了用于优化窗口尺寸和位置的计算机程序。TCAD 2-D工艺仿真验证了该技术的可行性。设计了漂移区长度约为15μm的SOI LDMOS。数值仿真结果表明,与RESURF结构器件相比较,其漂移区电场近似为理想的常数分布,并且击穿电压提高约8%,漂移区浓度提高约127%。由此可见,VLT是一种理想的横向耐压技术。 相似文献
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Heating mechanisms of LDMOS and LIGBT in ultrathin SOI 总被引:1,自引:0,他引:1
Ying-Keung Leung Paul A.K. Goodson K.E. Plummer J.D. Wong S.S. 《Electron Device Letters, IEEE》1997,18(9):414-416
Temperature rises due to self-heating in silicon-on-insulator (SOI) power devices may lead to performance degradation and reliability problems. This letter investigates the mechanisms and spatial distribution of heat generation in linearly graded SOI LDMOS and LIGBT devices. While Joule heating dominates in LDMOS devices, hole collection at the p-well-drift region junction contributes strongly to the heating of LIGBT's. Also, the presence of both Joule and recombination heating makes the heating profile more uniform in LIGBT's. These effects combine to yield a temperature rise in LIGBT's that is more uniform and lower on average than that in LDMOS devices 相似文献