Hg1-xCdxTe n+-p光电二极管中的深能级及其电流机构的流体静压力研究

在流体静压力(0—2GPa)下,对Hg_1-xCd_xTe n⁺-p光电二极管(x=0.5)室温电学特性进行了实验和理论研究。通过考虑深能级压力效应及其对深能级辅助隧道电流的影响,较好地解释了实验上观察到的p-n结伏安特性在小偏压范围下呈现的“反常”压力关系。由对实验数据的理论拟合得到两个深能级:D₁(=E_v+0.75E_g)和D₂(=E_v关键词：     

Diluted magnetic semiconductor superlattices and heterostructures

Diluted magnetic semiconductors (DMS) are mixed semiconducting crystals whose lattice is made up in part of substitutional magnetic ions. Cd_1−xMn_xTe and Hg_1−xMn_xTe are examples of such materials. Their structural and band parameters can be “tuned” by composition over a wide range. They can thus be exploited in situations completely similar to those involving Ga_1−xAl_xAs. Using molecular beam epitaxy, we have grown Cd_1−xMn_xTe superlattices with alternating Mn content, having up to 150 layers, with layer thickness ranging from 50 to 100 Å. The superlattice structure is clearly revealed by transmission electron microscopy and by zone-folding of the phonon spectrum observed in Raman scattering. Photoluminescence observed on Cd_1−xMn_xTe superlattices is several orders of magnitude greater than that from a Cd_1−xMn_xTe film with uniform Mn content, or from bulk Cd_1−xMn_xTe specimens. The presence of localized magnetic moments in DMS results in a strong exchange interaction between these moments and band electrons. This in turn leads to gigantic Zeeman splittings of impurity states, exciton levels, Landau levels, and the bands themselves. Zeeman splittings as large as 20 meV (which in non-magnetic semiconductors would require unrealistic megagauss fields) are easily achieved in DMS in fields of several kilogauss. Since the magnitude of this exchange-induced splitting in DMS can be comparable to the binding energies and to the minigaps encountered in multiple quantum wells, DMS superlattices hold promise of a host of novel effects of both fundamental and applied interest.     

Sb掺杂Hg1-xCdxTe的光致发光

对不同Sb掺杂浓度Hg_1-xCd_xTe（x≈0.38）样品在3.9—115K的温度范围内进行了光致发光实验测量，观察到与局域激子、带到带和施主受主对有关的辐射复合过程．并用光致发光手段发现Sb掺杂在x≈0.38的Hg_1-xCd_xTe中引入的约30meV的受主能级 关键词：     

Atomic and electronic structure formation at the metal-Cd1−xMnxTe interface

Atomic and electronic structure modification of a metal-Cd_1−xMn_xTe interface is achieved using selective etching of the Cd_1−xMn_xTe surface (x=0, 0.34) and Cd adsorption. It is revealed that Te, TeO₂, Mn₃O₄, and CdTeO₃ are formed at the Cd_1−xMn_xTe surface etched in Br₂ solution. Te and Cd_1−xMn_xTe produce TeCd_1−xMn_xTe heterojunctions, the salient features of which are nearly symmetric nonlinear I-V characteristics. At the Cd_1−xMn_xTe surface with adsorbed Cd, CdTe might form, resulting in a CdTe-Cd_1−xMn_xTe heterojunction. The metal-CdTe-Cd_1−xMn_xTe microstructure is characterized by a nonlinear dependence of current on voltage and rectifying behaviour. The results obtained give deep insight into electronic processes in metal-Cd_1−xMn_xTe microstructures.     

Hg1-xCdxTe禁带以上的本征光吸收

讨论了HgCdTe三元半导体在能量大于禁带宽度范围内的本征吸收光谱。经过分析比较实验数据,Kane理论结果以及几种经验公式,指出Anderson从Kane模型获得的理论公式及褚君浩等从实验结果得出的经验公式,最符合HgCdTe禁带以上本征光吸收行为。文中还就外延薄膜样品的本征吸收进行了讨论。 关键词：     

Magnetic field effect on transitions between direct and indirect excitons in diluted magnetic semiconductor double quantum wells

Transitions between direct and indirect excitons with change of magnetic field in double quantum well heterostructure Cd_1−xMg_xTe/Cd_1−yMg_yTe/Cd_1−xMg_xTe/Cd_1−zMn_zTe/Cd_1−xMg_xTe in external magnetic field are studied. The structure contains diluted magnetic semiconductor (Cd,Mn)Te layer that forms magnetic quantum well with the depth depending on the magnetic field intensity. Above some magnetic field the indirect exciton becomes the lowest excited state of the system. The indirect exciton lifetime exceeds by several orders of magnitude of the direct exciton one. The range of quantum well widths for which the indirect exciton is the exciton lowest state was estimated for the proposed system.     

Electron–hole symmetry and spin–orbit splitting in IV–VI asymmetric quantum wells

It is shown that, due to the electron–hole symmetry of the fundamental gap of the lead–salts (PbTe, PbSe and PbS), the Rashba spin splitting in their flat band asymmetric quantum wells is much reduced with the usual equal conduction and valence band-offsets. Different from the III–V case, we find that the important structure inversion asymmetry for the Rashba splitting in IV–VI quantum wells with different left and right barriers is not a material property (i.e., barrier height, effective mass or band gap) but results from the band alignment. This is shown by specific envelope function calculations of the spin-dependent subband structure of Pb_1−xEu_xTe/PbTe/Pb_1−yEu_yTe asymmetric quantum wells (x≠y), based on a simple but accurate four-band kp model for the bulk band structure near the gap, which takes into account band anisotropy, nonparabolicity and multi-valley effects.     

Modeling of the energy spectrum of the CdTe/Hg1-xCdxTe/CdTe quantum well by varying the band offset, well width, and composition x

Currently, CdTe/Cd _x Hg_1-x Te/CdTe heterostructures attract particular interest and are very promising for developing the next-generation terahertz radiation detectors. However, properties of such structures have not yet been studied in sufficient detail. The energy spectrum and wave functions of the CdTe/Cd _x Hg_1-x Te/CdTe heterostructure were theoretically modeled for various well widths, the valence band offset, and composition x in the range 0<x<0.16. Characteristic features of the behavior of energy levels of two-dimensional electrons in such structures were studied with respect to x variation. A criterion for determining the number of electronic levels below the conduction band bottom, applicable to compositions 0<x<0.16 was obtained. The time of two-dimensional electron relaxation by longitudinal optical phonons was calculated.     

Spin polarization dependent optical transition rates observed in the integer quantum Hall region

We report on a field-dependent photoluminescence (PL) emission rate for the transitions between band states in modulation-doped CdTe/Cd_1−xMg_xTe single quantum wells in the integer quantum Hall region. The recombination time observed for the magneto-PL spectra varies in concomitance with the integer quantum Hall plateaus. Furthermore, different PL decay times were observed for the two circular polarizations, i.e. for the transitions between the Zeeman split subbands of the Landau levels. We analyzed the data in comparison with the experimentally determined spin polarization of the conduction electrons and the Zeeman splitting of the valence band. Furthermore, we discuss the relevance of the spin polarization of the conduction electrons, the electron–hole exchange interaction and the spin-flip processes of the hole states for the PL decay time.     

Magnetooptical studies of Cd1−xMnxTe quantum wells with parabolic confining potential

We report on magnetooptical studies of II–VI semiconductor quantum wells with a parabolic shape of the potential grown on the basis of Cd_1−xMn_xTe. Photoluminescence excitation measurements revealed a series of peaks equidistant in energy associated with interband optical transitions between “harmonic oscillator states”. We observed the Zeeman splitting for heavy-hole excitons up to the subband index n=5. From the comparison of the experimental data with numerical calculations for the Zeeman splitting it was possible to determine the correct shape of the potential.     

Band mixing in narrow gap semiconductors

The interaction of conduction and valence bands in narrow gap semiconductors such as InSb and HgCdTe influences the position and width of subband energy levels in space-charge layers. While a nonzero width can only occur if electrons from the conduction band can tunnel into approximately degenerate states of the valence band the level shifts due to band mixing are always present. We present a Green's function treatment which allows in a simple way to discuss the dependence of band mixing effects on the parameters of thek·p-Hamiltonian in particular the band gap. The essential qualitative feature of the level shifts is adecrease of subband energy separation withdecreasing effective mass. This agrees with recent experimental results for Hg_1-x Cd _x Te.     

Growth and studies of Hg1−xCdxTe based low dimensional structures

The band structure of HgTe quantum wells (QWs) has been determined from absorption experiments on superlattices in conjunction with calculations based on an 8×8 k·p model. The band structure combined with self-consistent Hartree calculations has enabled transport results to be quantitatively explained.Rashba spin–orbit, (SO) splitting has been investigated in n-type modulation doped HgTe QWs by means of Shubnikov–de Haas oscillations (SdH) in gated Hall bars. The heavy hole nature of the H1 conduction subband in QWs with an inverted band structure greatly enhances the Rashba SO splitting, with values up to 17 meV.By analyzing the SdH oscillations of a magnetic two-dimensional electron gas (2DEG) in modulation-doped n-type Hg_1−xMn_xTe QWs, we have been able to separate the gate voltage-dependent Rashba SO splitting from the temperature-dependent giant Zeeman splitting, which are of comparable magnitudes. In addition, hot electrons and Mn ions in a magnetic 2DEG have been investigated as a function of current.Nano-scale structures of lower dimensions are planned and experiments on sub-micrometer magneto-transport structures have resulted in the first evidence for ballistic transport in quasi-1D HgTe QW structures.     

Lifetime of charge carriers in Hg1-xCdxTe (x=0.20) crystals

We examine the mechanisms for Auger recombination in narrow-gap semiconductors of the Hg_1-xCd_xTe type, connected with collision between two electrons in the E_c band followed by transition of one of them to the E_v1 band and collision between two holes in the E_v1 band followed by transition of one of them to the E_v2 band. In analyzing the contributions from different recombination mechanisms over broad concentration and temperature range, we used the models of P. E. Petersen and B. L. Gel'mont, taking into account the specific characteristics of the band structure of Hg_1-xCd_xTe crystals. We determined the temperature and concentration ranges for n- and p-type semiconductors in which different recombination mechanisms are realized, including a radiative mechanism. We compare the experimental data on charge carrier lifetime with the calculation results using different recombination models in the crystals under study.V. D. Kuznetsov Siberian Physicotechnical Institute at Tomsk State University. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 2, pp. 99–104, February, 1994.     

STRUCTURE STUDY OF MODULATION-DOPED Cd1-xMnxTe: In/CdTe STRAINED LAYER MULTIPLE QUANTUM WELLS

The photomodulated reflectivity (PR) spectroscopy of modulation-doped diluted mag-netic semiconductor Cd_1-xMn_xTe: In/CdTe multiple quantum wells has been measured at 20-300K. Several spectral features associated with intersubband transitions have been found. The band structure of Cd_1-xMn_xTe: In/CdTe has been calculated by the Hartree self-consistent method. The results show that the theory is in agreement with experiments. In addition, an abnormal transition intensity ratio of 22H (the second heavy hole subband to the second electroa subband) to 11H (the first heavy hole subband to the first electron subband) caused by electron filled effect has been reported. At low temperature, a feature associated with Fermi level is observed, which has not been reported before.     

First-principles study of the structural,electronic and optical properties of the cubic triangular quaternary ZnxCdyHg1-x-yTe alloys under hydrostatic pressure

In the present computational study, we have explored the structural, electronic and optical properties of ZnTe, CdTe and HgTe binary compounds and their ternary alloys Zn_xCd_1-xTe, Zn_xHg_1-xTe and Cd_xHg_1-xTe as well as their ordered quaternary Zn_xCd_yHg_1-x-yTe alloys using the full potential linearized augmented plane wave (FP-LAPW) method based on the density functional theory. We have numerically estimated the total energies, the lattice parameters, the bulk moduli and their first pressure derivative using the generalized gradient approximation (GGA). The band structure is computed using the modified Becke-Johnson (TB-mBJ) approximation. Results of our study show a nonlinear dependence of the composition on the lattice constant, bulk modulus and band gap for the binary and ternary compounds as well as for the quaternary alloys. Additionally, the dielectric function, the refractive index and the loss energy were also reported. The pressure effect on the band gap energy and optical properties were also investigated and reported. Our results are in good agreement with experimental values and theoretical data available in the literature.     

Hole subband non-parabolicities in strained Si/Si1 − xGexquantum wells

We study the hole subband non-parabolicities in undoped pseudomorphic Si/Si_{1 − x}Ge_xquantum wells, strained in the growth direction 100. We solve exactly the multiband effective mass equation that describes the heavy, light and split-off hole valence bands. The symmetries of the Luttinger–Kohn Hamiltonian of the system are used to decouple the degenerate subbands. We calculate the in-plane dispersion relations, investigate the importance of the inclusion of the split-off hole valence band in the Hamiltonian and comment on the resulted non-parabolicities. Resonance states are also obtained.     

CdxHg1-xTe混晶声子谱的远红外光谱研究

在温度4.2—300K和波数15—5OOcm^-1的范围内研究了x=0.18到0.45的不同组分的Cd_xHg_1-xTe的远红外吸收光谱。除剩余射线吸收带两侧的双声子吸收结构外,实验首次观察到一个位于波数20—50cm^-1的低频吸收带。用面间力常数的密度函数法等估计了Cd_xHg_1-xTe混晶的声子谱,并将上述低频吸收带归之于混晶导致的无序和“掺杂”诱发TA声子带模吸收效应。 关键词：     

Drag of carriers by photons in narrow-gap semiconductors

The current representing the drag of carriers by photons is calculated for cubic narrow-gap semiconductors allowing for the nonparabolicity and nonsphericity of the valence subbands. A quantitative Kane model is used to obtain a general tensor expression for the photocurrent related to the coefficients representing the nonparabolicity of the light-hole subband and the nonsphericity of the heavy-hole subband. The results are given of a numerical calculation of the principal parameters of the drag current in the form of components of the elementary tensors (as a function of temperature) and of the coefficient representing the nonparabolicity (as a function of the wavelength of the incident light) in the case of narrow-gap Hg_1–xCd_xTe solid solutions.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 5, pp. 62–66, May, 1980.     

Magnetic-field-induced change in optical transmission spectra of Hg<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Cd<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Te epitaxial films

The optical transmission spectra of epitaxial Hg_{1 − x} Cd _x Te films with a gradient of the band gap have been studied experimentally. The possibility of transforming the spectra after exposure of the samples to a homogeneous magnetic field has been demonstrated. This effect is possibly caused by the dependence of the magnetization of the Hg_{1 − x} Cd _x Te films on the composition gradient of the solid solution.     

The band structure and optical properties of the CdxHg1-xTe mixed crystals

The band structure of the Cd_xHg_1?xTe mixed crystals have been computed on the basis of tight-binding interpolation scheme and virtual crystal approximation. The bowing parameters of main energy gaps have been calculated as well as composition dependence of position of E₁ and E₁ + Δ₁ maxima in reflectivity spectra. Good agreement with previously reported experimental data has been found.