镨对锰掺杂钛酸钡陶瓷结构和介电性能的影响

采用冷压陶瓷技术制备了锰掺杂及镨锰共掺杂钛酸钡陶瓷.1.0%锰在钛酸钡中的掺杂导致形成四方和六方钙钛矿混合结构;镨的进一步掺杂导致六方相消失,形成四方钙钛矿单相结构.同时研究了镨对锰掺杂钛酸钡陶瓷介电性能的影响.     

锶掺杂二钛酸钡的熔盐法制备及其介电性能

为了获得织构化的二钛酸钡陶瓷,并利用元素替代调控和改善陶瓷介电性能的特点,采用熔盐法,以碳酸钡,二氧化钛和碳酸锶为原料,以氯化钠和氯化钾为熔盐,在840 ℃反应5 h,X射线衍射结果显示,得到的粉体为单相,说明锶离子完全进入了二钛酸钡晶格,成功制备出了摩尔比为1%锶掺杂的二钛酸钡粉体.通过扫描电子显微镜形貌分析显示,制备的二钛酸钡锶单晶颗粒呈棒状,长约2.0 μm,矩形截面宽约为100～200 nm.棒状颗粒所组成的粉体经单轴压力压片、烧结后得到的二钛酸钡锶陶瓷,居里温度约为415 ℃,说明当锶掺杂量为1%（摩尔比）时,相比未掺杂的单晶二钛酸钡的居里温度略有降低.在测量频率为10 kHz～10 MHz的范围内,陶瓷片在成型时压力轴垂直方向上的介电常数峰值约是平行方向上介电常数峰值的3倍,说明陶瓷的介电性能具有明显的各向异性,成功获得了织构化的二钛酸钡锶陶瓷.     

CaF_2掺杂对α-BZN陶瓷结构与介电性能的影响

采用固相反应法制备Bi1.5-xCaxZnNb1.5O7-yFy（0.00≤x≤0.20,以下简称BZN-x）陶瓷样品,研究了Ca2＋、F-共掺杂对BZN-x陶瓷烧结特性、微观结构和介电性能的影响。结果表明：BZN-x陶瓷样品的最佳烧结温度为1 020℃,CaF2在α-BZN中的固溶度是0.05,伴随着CaF2掺杂量的增加,介电常数逐渐减小,而介电损耗先减小然后又微弱增加（测试频率为1 MHz时）。通过介电损耗、电阻率的变化确认了CaF2掺入α-BZN后的缺陷补偿方式,同时也证实随着掺杂量的增加,介电常数峰值温度向低温移动与缺陷补偿方式有关。     

改性钛酸钡及其聚合物复合材料介电性能研究

以五氧化二铌(Nb_2O_5)及四氧化三钴(Co_3O_4)混合物为掺杂剂改性钛酸钡(BaTiO_3,BT),通过固相反应获得表面含铌、钴的改性钛酸钡粉体(BTNC),并以其为填料制备了环氧树脂(EPR)基复合材料BTNC-EPR。采用扫描电子显微镜(SEM)、能谱仪(EDS)等对BTNC、复合材料的表面形态及成分进行了表征及分析。探讨了Nb2O5与Co_3O_4的质量比、掺杂剂添加量对BTNC/EPR复合材料介电性能的影响。结果表明:当BTNC/EPR质量比为4:1,BTNC中掺杂剂含量w=1%,Nb_2O_5与Co_3O_4的质量比为4.5:1时,复合材料介电性能最佳,在100 Hz下其介电常数比未添加掺杂剂的复合材料增加了30,且介电损耗下降。     

钛酸钡纤维/颗粒共混介质陶瓷制备及其介电性能

以乙酸钡和钛酸丁酯为原料,乙酸为溶剂,聚乙烯吡咯烷酮(PVP)作为黏结剂,通过溶胶-凝胶法制备具有可纺性的钛酸钡前驱体,再经过静电纺丝技术制备BaTiO3/PV P复合纤维,800℃煅烧3 h获得纯BaTiO3纤维.将BaTiO3纤维与采用溶胶-凝胶法制得的BaTiO3颗粒不同比例共混、1320℃烧结制备BaTiO3介质陶瓷,经涂银、烧银制得电容器试样并进行介电性能测试.利用X射线衍射仪、场发射扫描电子显微镜对煅烧前后的纤维的结构形貌进行了表征,利用自动原件分析仪对陶瓷电容器的介电性能进行测试.结果表明,复合纤维经800℃煅烧后形成纯钛酸钡晶相的中孔纤维,表面呈均匀颗粒排布的多孔结构,纤维直径收缩变小;纤维质量分数为20％ 时制备的陶瓷介电常数在温度曲线和频率曲线中均表现出最大值;介电损耗则表现出随温度/频率升高增大的趋势.介质陶瓷的居里点未发生偏移,均为120℃.     

Mg掺杂对 Ba0.6Sr0.4TiO3薄膜介电性能的影响

应用Sol-Gel工艺制备了组份为(1-y)Ba 0.6Sr0.4TiO3-yMgO的薄膜材料,研究了Mg掺杂BST薄膜晶相结构、介电性能以及绝缘性能的影响规律.实验发现随着Mg掺杂量的增加,BST薄膜的介电常数、损耗因子以及电容变化率减小,其电阻率则增加;当Mg掺杂量分数为5%时,其介电常数为380,损耗因子为0.013,电容变化率为17.5%,电阻率为1.0×1012Ω@crm.     

CaF2掺杂对α-BZN陶瓷结构与介电性能的影响

采用固相反应法制备Bi1.5-xCaxZnNb1.5O7-yFy(0.00≤x≤0.20,以下简称BZN-x)陶瓷样品,研究了Ca2+、F-共掺杂对BZN-x陶瓷烧结特性、微观结构和介电性能的影响。结果表明:BZN-x陶瓷样品的最佳烧结温度为1 020℃,CaF2在α-BZN中的固溶度是0.05,伴随着CaF2掺杂量的增加,介电常数逐渐减小,而介电损耗先减小然后又微弱增加(测试频率为1 MHz时)。通过介电损耗、电阻率的变化确认了CaF2掺入α-BZN后的缺陷补偿方式,同时也证实随着掺杂量的增加,介电常数峰值温度向低温移动与缺陷补偿方式有关。     

CoO掺杂MgTiO3-CaTiO3介质陶瓷的介电性能

采用了固相反应法制备了CoO掺杂的MgTiO3CaTiO3(MCT)介质陶瓷.研究了CoO掺杂对MCT介质陶瓷烧结特性、相组成和介电性能的影响.结果表明:CoO掺杂能有效地降低MCT陶瓷的烧结温度至1250℃;CoO掺杂能有效地降低MCT陶瓷的介电损耗(～10-5).     

铌钴共掺杂钛酸钡陶瓷的介电温度稳定性的研究

采用X射线衍射(XRD)、拉曼光谱(RS)、原子力显微镜(AFM)以及介电温谱(DTC)研究BaTiO3-xNb2O5-0.005Co2O3(x=0.02,0.04,0.08)系统中Nb含量变化对陶瓷的结构及介电温度稳定性的影响.结果表明:增加Nb含量将增强介电陶瓷的温度稳定性,但介电常数降低.Nb含量在4%以上时NC陶瓷满足X7R介电指标.     

稀土Nd掺杂对Sr（Fe0.5Nb0.5）O3基介质陶瓷巨介电性能的影响

铁铌酸锶是一种重要的介质材料,具有复合钙钛矿结构,同其他介质材料相比,具有相对高的介电常数的优点,在高储能等领域有重要的应用潜力,是一种用途广泛的功能陶瓷材料．实验以Sr（Fe0.5Nb0.5）O3基陶瓷为研究对象,研究了稀土Nd掺杂对该系陶瓷巨介电性能的影响．结果表明：随着Nd抖掺杂量的增加,陶瓷样品的介电常数逐渐变大;随着温度的上升,陶瓷体系的介电常数也逐渐增大;Nd抖含量x≤0．10时,陶瓷样品有着良好的频率稳定性,x=0．10的陶瓷样品在100kHZ下有着良好的温度稳定性．     

钛酸锶钡陶瓷的结构及介电规律研究

采用冷压陶瓷技术制备了(Ba1-xSrx)TiO3(x=0.15,0.20,0.25,0.30,0.35)陶瓷.研究了烧结温度的提高对陶瓷结构及介电规律的影响.研究表明:30℃烧结温度的提高使该系列陶瓷能在x=0.35后从四方相进入立方相.介电峰移动率为-3.2℃/%Sr.x=0.35样品的介电峰发生在室温附近,室温介电常数在8 000左右,室温介电损耗降至0.04以下,适合于高介电材料的应用.     

Sintering and dielectric properties of fine-grained BaTiO_3 ceramics

A new sintering method, spark plasma sintering (SPS), is described for the sintering of fine-grained BaTiO_3 ceramics. Dense ceramics with fine grain size of near 170 nm are obtained using SPS at low temperature of 900℃ without holding time. The dielectric measurements of various grain size specimens show that the dielectric constants decrease with the reduce of grain size, and diffuse phase transition showed in the dielectric-temperature spectra. The variation in dielectric properties with grain size is explained.     

Sintering and dielectric properties of fine-grained BaTiO3 ceramics

A new sintering method, spark plasma sintering (SPS), is described for the sintering of fine-grained BaTiO₃ ceramics. Dense ceramics with fine grain size of near 170 run are obtained using SPS at low temperature of 900°C without holding time. The dielectric measurements of various grain size specimens show that the dielectric constants decrease with the reduce of grain size, and diffuse phase transition showed in the dielectric-temperature spectra. The variation in dielectric properties with grain size is explained.     

Sr/Zr掺杂以及抛光对BaTiO_3陶瓷结构和介电性能的影响

采用冷压陶瓷技术制备了(Ba0.75Sr0.25)TiO3、Ba(Ti0.8Zr0.2)O3、(Ba0.75Sr0.25)(Ti0.8Zr0.2)O3陶瓷.XRD结果表明,Sr和Zr在BaTiO3的Ba位、Ti位、及Ba/Ti双位并入均具有高固溶性,且为没有超结构特征的单相钙钛矿结构.Sr/Zr的双位并入加快介电峰向低温的移动.Sr掺杂对Ba(Ti0.8Zr0.2)O3介电峰移动率的贡献为-1.5℃/mol%Sr.抛光技术对介电温谱的影响研究表明,尽管水抛光导致(Ba0.75Sr0.25)(Ti0.8Zr0.2)O3陶瓷颜色变暗,但晶体结构不变、介电峰值降低.     

镧掺杂对Sm2Zr2O7介电和荧光性能的影响

采用溶胶凝胶和固相烧结法成功制备了纯净的具有焦绿石结构的（Sm1-xLax）2Zr2O7固溶体,该类材料组织结构致密、晶界清晰、无其他相或未反应物存在．大半径La^3＋的引入使ZrO6八面体体积增大,从而其介电常数逐渐增大;La的掺杂使其晶格有序度增大,从而使其荧光活性逐渐增强．     

Effect of SiO2 addition on the dielectric properties and microstructure of BaTiO3-based ceramics in reducing sintering

The effect of SiO2 doping on the sintering behavior,microstructure,and dielectric properties of BaTiO3-based ceramics has been investigated.Silica was added to the BaTiO3-based powder prepared by the solid state method with 0.075mo1%,0.15mo1%,and 0.3mo1%,respectively.The SiO2-doped BaTiO3-based ceramic with high density and uniform grain size were obtained,which were sintered in reducing atmosphere.A scanning electron microscope,X-ray diffraction,and LCR meter were used to determine the microstructure as well as the dielectric properties.SiO2 can form a liquid phase belonging to the ternary system of BaO-TiO2-SiO2,leading to the formation of BaTiO3 ceramics with high density at a lower sintering temperature.The SiO2-doped BaTiO3-based ce-ramics can be sintered to a theoretical density higher than 95% at 1220℃ with a soaking time of 2 h.The dielectric constants of the sample with 0.15mo1% SiO2 addition sintered at 1220℃ is about 9000.Doping with a small amount of silica can improve the sinter-ing and dielectric properties of BaTiO3-based ceramics.     

Influence of CaZrO<Subscript>3</Subscript> on dielectric properties and microstructures of BaTiO<Subscript>3</Subscript>-based X8R ceramics

The influences of CaZrO₃ on the dielectric properties and microstructures of BaTiO₃ (BT)-based ceramics have been investigated. The experiment results showed that the dielectric constant at room temperature increased with the addition of CaZrO₃ in the range of 0–3.0 mol%, which could be explained by the growth of BT grains. XRD analysis revealed that the tetragonality declined as CaZrO₃ concentration increased. XRD patterns of BT ceramics with different amounts of CaZrO₃ doping were analyzed by a recently developed procedure-materials analysis using diffraction (MAUD), which was based on the Rietveld method combined with Fourier analysis. The results depicted that the high temperature peak of temperature-capacitance characteristics (TCC) was largely dependent on the micro-strain of samples. Furthermore, more CaZrO₃ doping resulted in lower porosity and higher density. It was revealed that proper usage of CaZrO₃ could improve the dielectric properties significantly, which was benefit to develop X8R multi-layer ceramic capacitors.