基于光子晶体光纤的超连续谱光源设计

为了运用光子晶体光纤高非线性效应技术获得超宽光谱,设计了一种基于光子晶体光纤的超连续谱光源,通过对光子晶体光纤进行塌孔处理后再熔接的方式,将高峰值功率的窄线宽脉冲光注入高非线性光子晶体光纤,利用光纤非线性效应实现了光谱展宽.实验结果表明,该超连续谱光源实现了光谱范围440～2400 nm,输出光功率为276 mW.     

光子晶体光纤的非线性效应及其应用研究进展

光子晶体光纤在光器件的集成化、小型化乃至大幅降低其成本方面都有着重要的应用前景。介绍了光子晶体光纤的各类非线性效应及其潜在应用,重点讨论基于光子晶体光纤的光开关实现方案,并提出一种基于M Z干涉的光子晶体光纤光开关方案,对其可行性进行了探讨。     

XPM对非线性光纤环镜微波光子开关的影响

为了研究交叉相位调制(XPM)对非线性光纤环镜微波光子开关的影响.基于耦合非线性薜定谔方程,彩分步傅里叶法建立考虑XPM在内的数值分析平台,获得了MOLM微波光子开关中XPM对微波调制光载波信号和NOLM功率舆函数的影响.数值计算表明:XPM导致调制波波形畸变,信号能量从主瓣泄露;并且随着调制带宽的增大,旁瓣泄露愈加严重.同时由于XPM效应的非互易性,NOLM功率传输函数扭变,在耦合器分光比f∈(0,0.5)区间减少而在f∈(0,0.5)区间增大.     

高非线性光子晶体光纤的研究及应用

文章介绍了高非线性光子晶体光纤的特点及产生高非线性特性的基本原理,分析了在高非线性光子晶体光纤中产生超连续光谱和慢光效应的机理和其应用,并给出了国内利用文章作者研制的高非线性光子晶体光纤进行超连续谱和慢光试验的结果.     

光子晶体光纤压力传感器信号检测方案

光子晶体光纤压力传感器可广泛用于各种压力环境监测中.文章分析了光子晶体光纤中光脉冲的传输特性,提出了相位调制型光子晶体光纤压力传感器的基本模型,对光子晶体光纤传感器基于光脉冲相位和光强的信号检测方案进行了讨论.光子晶体光纤传感器的压力敏感性高,而温度敏感远远低于传统的光纤传感器.光子晶体光纤传感器系统简洁、适用.     

基于光子晶体光纤的全光开关实验研究

在10Gb／s光传输系统中进行了以光子晶体光纤（PCF）为非线性介质的全光开关实验研究。实验中高强度光脉冲经过非线性系数为普通常规光纤36倍的25m长光子晶体光纤后，观察到了由于自相位调制效应（SPM）而导致的光谱展宽现象。实验进一步研究了基于这一效应的全光开关特性，并得到了很好的开关特性曲线。同时还发现这种全光开关具有全光波形整形和波长变换的功能，在实验中变换脉冲中心波长偏离入射脉冲波长4nm。实验结果表明，这种具有高非线性系数的光产品体光纤非常有利于器件的小型化和集成化。     

基于光纤XPM光学生成UWB信号的方法

提出了一种基于色散位移光纤(DSF)的交叉相位调制(XPM)效应的超宽带(UWB)光学生成方法。该方法首先利用DSF的XPM效应实现高功率的高斯泵浦光对低功率的直流探测光的交叉相位调制,然后利用光纤布拉格光栅(FBG)对探测光进行鉴频,实现相位调制到强度调制的转换,从而获得单周期UWB信号。利用光子仿真软件对方案进行了仿真实验,得到了中心频率分别为7GHz和6.95GHz、相对带宽分别为143%和145%的UWB信号,验证了所提方法的可行性。同时,研究了输入信号脉冲宽度、FBG的反射率、鉴频器的类型对产生的单周期UWB脉冲信号波形和频谱的影响。仿真实验的结果表明,该方案对输入信号脉冲宽度不是过宽的情况下具有良好的容忍度,光学高斯带通滤波器、波分复用器和FBG等光滤波器均可作为鉴频器,采用FBG优点是可通过改变反射率灵活地调整产生的UWB脉冲信号的波形。     

全光纤锁模腔结构的全光时钟提取实验研究

分析并实验验证了一种全光纤锁模激光器结构的全光时钟提取方案。方案中,采用高非线性光纤(HNLF)替代传统结构中的半导体光放大器(SOA),利用光纤中的交叉相位调制(XPM)效应实现腔内的非线性调制,避免了以SOA作为非线性光调制器件的锁模激光器全光时钟提取方案中,由于载流子恢复时间较长从而限制工作速率的缺点,以达到突破"电子瓶颈"的目的。理论分析了光纤中交叉相位调制的特性以及环形锁模腔的时钟提取原理,并通过实验,从40Gbit/s的光归零码(RZ)信号中提取出了高质量的光信号时钟。该方案可以直接在更高速率条件下工作。     

掺铒光纤放大器中交叉相位调制效应的研究

本文建立了考虑交叉相位调制效应(XPM)的光放大模型,得到了(XPM)效应对小信号增益系数的影响,分析得到掺铒光纤放大器(EDFA)中XPM引起的强度起伏和非线性系数、输入的泵浦功率以及放大器长度有关.仿真结果证明EDFA中XPM效应的影响不能忽略,并且当γ≥0.01/W@m时,级联EDFA中第一个EDFA产生的XPM效应的影响也是不能忽略的.     

40Gb/s CSRZ-RZ信号波长与调制格式转换的研究

通过利用高非线性光子晶体光纤的交叉偏振调制效应,在60m的高非线性光子晶体光纤中实现了40Gb/s的载波抑制归零(carrier-suppressed return-to-zero CSRZ)信号的波长变换和载波抑制归零码(CSRZ)到归零码(return-to-zero RZ)的调制格式变换,并通过理论计算分析了走离...     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.