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在用X射线双晶衍射研究GaN和ZnO结晶性能的实验中,观察到(102)非对称衍射摇摆曲线的半峰宽比(002)对称衍射更窄以及ZnO(002)摇摆曲线分裂的现象.经研究证实,这是由于Kα2线参与衍射引起的.通过计算Kα1和Kα2线在不同晶面衍射的分离角并与实验现象对比,阐明了GaN样品(102)半峰宽比(002)小以及ZnO(002)衍射峰分裂的原因.在此基础上,进一步分析了在使用不同参考晶体的双晶衍射系统中,GaN和ZnO的各晶面被X射线色散展宽的情况,并提出,在使用Si,Ge或GaAs的(220)面为参考晶面的双晶衍射仪中,GaN和ZnO的(002)和(102)面摇摆曲线的半峰宽受色散效应的影响小;而在使用Si,Ge或GaAs的(004)面为参考晶面的双晶衍射系统中,(002)和(102)面摇摆曲线的半峰宽受色散效应影响较大,此时(004)和(103)受色散影响小,因此用来表征晶体质量将更可靠. 相似文献
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色散对GaN和ZnO的XRD摇摆曲线的影响 总被引:2,自引:0,他引:2
在用X射线双晶衍射研究GaN和ZnO结晶性能的实验中,观察到(102)非对称衍射摇摆曲线的半峰宽比(002)对称衍射更窄以及ZnO(002)摇摆曲线分裂的现象.经研究证实,这是由于Kα2线参与衍射引起的.通过计算Kα1和Kα2线在不同晶面衍射的分离角并与实验现象对比,阐明了GaN样品(102)半峰宽比(002)小以及ZnO(002)衍射峰分裂的原因.在此基础上,进一步分析了在使用不同参考晶体的双晶衍射系统中,GaN和ZnO的各晶面被X射线色散展宽的情况,并提出,在使用Si,Ge或GaAs的(220)面为参考晶面的双晶衍射仪中,GaN和ZnO的(002)和(102)面摇摆曲线的半峰宽受色散效应的影响小;而在使用Si,Ge或GaAs的(004)面为参考晶面的双晶衍射系统中,(002)和(102)面摇摆曲线的半峰宽受色散效应影响较大,此时(004)和(103)受色散影响小,因此用来表征晶体质量将更可靠. 相似文献
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X射线双晶衍射仪系统中受参考晶体分辨率等因素的影响,X射线的相干长度不超过1 μm.X射线在异质外延晶体材料内衍射时,不超过相干长度范围内厚度外延层中的衍射波会产生相干叠加,否则,产生非相干叠加.分子束外延(MBE)生长了短周期InGaAs/GaAs超晶格,在其摇摆曲线中观察到显示X射线在超晶格结构中衍射相干特征的多级卫星峰及Pendell(o)song干涉条纹,并利用相干光理论对超晶格结构信息诸如周期及"0"级峰位置等进行了分析. 相似文献
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用分子束外延技术(MBE)生长了GaAs基共振隧穿二极管(RTD)的材料结构,利用X射线双晶衍射(XRD)方法对材料进行了测试分析.结果表明,材料的双晶衍射峰半峰宽达到16.17",GaAs层与In0.1Ga0.9As层的相对晶格失配率仅为0.015 6%.对实验样品进行了双晶衍射回摆曲线的模拟,模拟结果与测试结果符合较好,说明生长的RTD材料结构与设计相符合.通过制成器件对材料进行验证,室温下对器件进行直流测试,PVCR达到5.1,峰值电流密度达到73.6 kA/cm2. 相似文献
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Wei-Chou Hsu Dong-Hai Huang Yu-Shyan Lin Yeong-Jia Chen Jun-Chin Huang Chang-Luen Wu 《Electron Devices, IEEE Transactions on》2006,53(3):406-412
This paper proposes a In/sub 0.5/Al/sub 0.5/As/In/sub x/Ga/sub 1-x/As/In/sub 0.5/Al/sub 0.5/As (x=0.3-0.5-0.3) metamorphic high-electron mobility transistor with tensile-strained channel. The tensile-strained channel structure exhibits significant improvements in dc and RF characteristics, including extrinsic transconductance, current driving capability, thermal stability, unity-gain cutoff frequency, maximum oscillation frequency, output power, power gain, and power added efficiency. 相似文献
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《Electronics letters》1990,26(1):27-28
AlGaAs/GaInAs/GaAs pseudomorphic HEMTs with an InAs mole fraction as high as 35% in the channel has been successfully fabricated. The device exhibits a maximum extrinsic transconductance of 700 mS/mm. At 18 GHz, a minimum noise figure of 0.55 dB with 15.0 dB associated gain was measured. At 60 GHz, a minimum noise figure as low as 1.6 dB with 7.6 dB associated gain was also obtained. This is the best noise performance yet reported for GaAs-based HEMTs.<> 相似文献
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A 12 /spl times/ 12 In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As avalanche photodiode array
Zheng X.G. Hsu J.S. Sun X. Hurst J.B. Li X. Wang S. Holmes A.L.Jr. Campbell J.C. Huntington A.S. Coldren L.A. 《Quantum Electronics, IEEE Journal of》2002,38(11):1536-1540
We report a 12 /spl times/ 12 In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As avalanche photodiode (APD) array. The mean breakdown voltage of the APD was 57.9 V and the standard deviation was less than 0.1 V. The mean dark current was /spl sim/2 and /spl sim/300 nA, and the standard deviation was /spl sim/0.19 and /spl sim/60 nA at unity gain (V/sub bias/ = 13.5 V) and at 90% of the breakdown voltage, respectively. External quantum efficiency was above 40% in the wavelength range from 1.0 to 1.6 /spl mu/m. It was /spl sim/57% and /spl sim/45% at 1.3 and 1.55 /spl mu/m, respectively. A bandwidth of 13 GHz was achieved at low gain. 相似文献
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Yi-Jen Chan Ming-Ta Yang 《Electron Devices, IEEE Transactions on》1995,42(10):1745-1749
The properties of both lattice-matched and strained doped-channel field-effect transistors (DCFET's) have been investigated in AlGaAs/In/sub x/Ga/sub 1-x/As (0/spl les/x/spl les/0.25) heterostructures with various indium mole fractions. Through electrical characterization of grown layers in conjunction with the dc and microwave device characteristics, we observed that the introduction of a 150-/spl Aring/ thick strained In/sub 0.15/Ga/sub 0.85/As channel can enhance device performance, compared to the lattice-matched one. However, a degradation of device performance was observed for larger indium mole fractions, up to x=0.25, which is associated with strain relaxation in this highly strained channel. DCFET's also preserved a more reliable performance after biased-stress testings.<> 相似文献
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S. Privitera F. Wang P. Dumont-Girard K. Liu C. Bongiorno 《Microelectronic Engineering》2010,87(3):430-433
SixCryCzBv thin films with several compositions have been studied for integration of high precision resistors in 0.8 μm BICMOS technology. These resistors, integrated in the back-end of line, have the advantage to provide high level of integration and attractive electrical behavior in temperature, for analog devices. The film morphology and the structure have been investigated through transmission electron microscopy analysis and have been then related to the electrical properties on the base of the percolation theory. According to this theory, and in agreement with experimental results, negative thermal coefficient of resistance (TCR) has been obtained for samples with low Cr content, corresponding to a crystalline volume fraction below the percolation threshold.Samples with higher Cr content exhibit, instead, a variation of the TCR as a function of film thickness: negative TCR values are obtained for thickness lower than 5 nm, corresponding to a crystalline volume fraction below the percolation threshold; positive TCR are obtained for larger thickness, indicating the establishment of a continuous conductive path between the Cr rich grains. This property seems to be determinant in order to assure the possibility to obtain thin film resistors almost independent on the temperature. 相似文献
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Jie Liu Yugang Zhou Rongming Chu Yong Cai Chen K.J. Lau K.M. 《Electron Device Letters, IEEE》2005,26(3):145-147
We report an Al/sub 0.3/Ga/sub 0.7/N-Al/sub 0.05/Ga/sub 0.95/N-GaN composite-channel HEMT with enhanced linearity. By engineering the channel region, i.e., inserting a 6-nm-thick AlGaN layer with 5% Al composition in the channel region, a composite-channel HEMT was demonstrated. Transconductance and cutoff frequencies of a 1 /spl times/100 /spl mu/m HEMT are kept near their peak values throughout the low- and high-current operating levels, a desirable feature for linear power amplifiers. The composite-channel HEMT exhibits a peak transconductance of 150 mS/mm, a peak current gain cutoff frequency (f/sub T/) of 12 GHz and a peak power gain cutoff frequency (f/sub max/) of 30 GHz. For devices grown on sapphire substrate, maximum power density of 3.38 W/mm, power-added efficiency of 45% are obtained at 2 GHz. The output third-order intercept point (OIP3) is 33.2 dBm from two-tone measurement at 2 GHz. 相似文献
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Patrick W. C. Ho Firas Odai Hatem Haider Abbas F. Almuri T. Nandha Kumar 《半导体学报》2016,37(6):064001-13
Nonvolatile memories have emerged in recent years and have become a leading candidate towards replacing dynamic and static random-access memory devices. In this article, the performances of TiO2 and TaO2 nonvolatile memristive devices were compared and the factors that make TaO2 memristive devices better than TiO2 memristive devices were studied. TaO2 memristive devices have shown better endurance performances (108 times more switching cycles) and faster switching speed (5 times) than TiO2 memristive devices. Electroforming of TaO2 memristive devices requires~4.5 times less energy than TiO2 memristive devices of a similar size. The retention period of TaO2 memristive devices is expected to exceed 10 years with sufficient experimental evidence. In addition to comparing device performances, this article also explains the differences in physical device structure, switching mechanism, and resistance switching performances of TiO2 and TaO2 memristive devices. This article summarizes the reasons that give TaO2 memristive devices the advantage over TiO2 memristive devices, in terms of electroformation, switching speed, and endurance. 相似文献
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M. Blomqvist S. Khartsev A. Grishin 《Photonics Technology Letters, IEEE》2005,17(8):1638-1640
We report on waveguiding and electrooptic properties of epitaxial Na/sub 0.5/K/sub 0.5/NbO/sub 3/ films grown by radio-frequency magnetron sputtering on Al/sub 2/O/sub 3/(11_02) single crystal substrates. High optical waveguiding performance has been demonstrated in infrared and visible light. The in-plane electrooptic effect has been recorded in transmission using a transverse geometry. At dc fields, the effective linear electrooptic coefficient was determined to 28 pm/V, which is promising for modulator applications. 相似文献