共查询到19条相似文献,搜索用时 859 毫秒
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为了进一步研究用球磨法制备B-C-N物质的规律性,在4.5~5.8 GPa压力、800~1 300 ℃温度条件下,对用球磨法获得的石墨-六角氮化硼微晶混合物进行高压热处理。热处理后产物的XRD、XPS及FT-IR测试表明:在4.5 GPa、800 ℃时,样品中出现部分hBN晶化现象,但石墨仍然保持微晶状态;当温度升到1 300 ℃时,样品中不仅存在晶化的hBN,而且出现一种类石墨结构的B-C-N三元化合物。与相关研究资料对比后认为:这一新化合物近似于BC3N。压力增加到5.8 GPa而温度保持1 300 ℃时,结果变化不大。 相似文献
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将石墨和六方氮化硼(h-BN)混合粉球磨120h形成的非晶B-C-N粉在4.5GPa,1600K等温退火45min. XRD,TEM和Raman散射测量结果表明,高压合成的产物由晶格常数为a1=0.2551nm,c1=0.6716nm的六方Ⅰ相和a2=1.2360nm,c2=0.8570nm的六方Ⅱ相组成,其中六方Ⅱ相为B-C-N 新相. 在室温该新相在1279,1368,1398cm-1出现三个特征Raman峰. 变温Raman测量结果表明,在测量温度T=93K时,样品中的主要相为六方Ⅰ相,随着温度的升高,六方Ⅰ相逐渐向六方Ⅱ相转变,当T>473K时,六方Ⅰ相完全转变成六方Ⅱ相. 当温度从673K降到93K过程中,样品又从六方Ⅱ相逐渐变回到六方Ⅰ相. 对这一相变的机理进行了讨论.
关键词:
B-C-N
机械球磨
高温高压
相转变 相似文献
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以X射线衍射分析作参比,分析了高度三维有序到近乱层结构的9种六方氮化硼的红外和拉曼光谱,并进行了立方氮化硼的高温高压合成。光谱分析表明,随着晶性的降低,六方氮化硼的低频红外吸收峰的位置及拉曼谱线等基本振动光谱发生明显的特征性的变化,并伴随出现各自不同的次级光谱结构。合成结果表明,在触媒作用下,立方氮化硼的形成需要六方氮化硼原料有一定的结晶度,但立方氮化硼合成效果与六方氮化硼结晶度并非是简单的单调关系。对振动光谱和合成试验的结果进行了讨论。 相似文献
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本文采用基于密度泛函理论的第一性原理平面波赝势和局域密度近似方法,优化了立方和六方氮化硼的几何结构,系统地研究了零温高压下立方和六方氮化硼的几何结构、力学、电学以及光学性质.结构与力学性质研究表明:立方氮化硼的结构更加稳定,两种结构的氮化硼均表现出一定的脆性,而六方氮化硼的热稳定性则相对较差;电学性质研究表明:立方氮化硼和六方氮化硼均为间接带隙半导体,且立方氮化硼比六方氮化硼局域性更强;光学性质结果显示:立方氮化硼和六方氮化硼对入射光的通过性都很好,在高能区立方氮化硼对入射光的表现更加敏感.此外,还研究了高温高压下立方氮化硼的热力学性质,并得到其热膨胀系数、热容、德拜温度和格林艾森系数随温度和压力的变化关系.本文的理论研究阐述了高压下立方氮化硼和六方氮化硼的相关性质,为今后的实验研究提供了比较可靠的理论依据. 相似文献
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Analysis of Transition Mechanism of Cubic Boron Nitride Single Crystals under High Pressure-High Temperature with Valence Electron Structure Calculation 下载免费PDF全文
The possibilities of hexagonal boron nitride(hBN) and lithium boron nitride(Li_3BN_2) transition into cubic boron nitride(cBN) under synthetic pressure 5.0 GPa and synthetic temperature 1700 K are analyzed with the use of the empirical electron theory of solids and molecules. The relative differences in electron density are calculated for dozens of bi-phase interfaces hBN/cBN, Li_3BN_2/cBN. These relative differences of hBN/cBN are in good agreement with the first order of approximation(10%), while those of Li_3BN_2/cBN are much greater than 10%.This analysis suggests that Li_3BN_2 is impossible to be intermediate phase but is a catalyst and cBN should be directly transformed by hBN. 相似文献
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Sintering of cubic boron nitride (cBN) with addition of A1 is carried out in the temperature range 1300-1500℃ and under the pressure 5.5 GPa. When sintered at 1300℃, a weak diffractive peak of hexagonal BN (hBN) is observed in the Al-cBN sample, indicating the transformation from cBN to hBN. No nitrides or borides of A1 are observed, which indicated that A1 does not react with cBN obviously. When the sintering temperature is increased to 1400℃, the diffractive peak of hBN disappears and new phases of A1N and A1B2 are observed, due to reactions between A1 and cBN. When the sintering temperature is further increased to 1500℃, the contents of A1N and A1B2 phases increase and the A1 phase disappears completely. 相似文献
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The structural characteristics and chemical, morphological, and optical properties of cBN and cBN:Gd micropowders are studied by x-ray diffraction, energy-dispersive electron probe microanalysis (x-ray spectral microanalysis), and photoluminescence techniques. Cubic boron nitride (cBN) micropowders were synthesized at high pressures and temperatures from hexagonal boron nitride (hBN) micropowder and Li3N catalyst. cBN:Gd micropowders were synthesized from mixtures of hBN, Li3N, and GdF3 micropowders. A lattice parameter of a~3.615 ? is calculated for both types of powder (cBN and cBN:Gd). The photoluminescence spectra of the cBN:Gd powder are found to contain emission lines attributable to intracenter optical transitions of Gd3+ ions. 相似文献
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The stoichiometry of boron nitride (BN) films, which are deposited with self-bias-assisted radio frequency (rf) magnetron sputtering of a hexagonal boron nitride (hBN) target, has been investigated with Auger electron spectroscopy (AES) and the MCs+-mode of secondary ion mass spectroscopy (MCs+-SIMS) for the sake of a better understanding of the growth mechanism of cubic boron nitride (cBN). The cubic fraction of the films is determined with Fourier-transform infrared spectroscopy (FTIR). It is shown that full stoichiometry of the deposited films is decisive for cBN-growth. A substrate bias voltage can increase the N concentration of a growing film under N-deficient deposition conditions. This effect is shown to be temperature dependent. PACS 52.77.Dq; 81.15.Cd; 68.55.Nq 相似文献
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Crystallographic relations between different forms of boron nitride (BN) appearing at the high pressure–high temperature structural phase transformation have been revealed by high-resolution transmission electron microscopy (HRTEM). As starting materials, crystalline hexagonal BN (hBN) with different degrees of crystallinity, or with defects intentionally introduced, were used. Cubic BN (cBN) is formed only as a minor component, the rest consisting of different forms of sp 2 bonded BN: hBN, compressed, monoclinic deformed hBN, or turbostratic BN (tBN). The small cBN crystallites (300–400?nm) contain many defects such as twins, stacking faults and nanoinclusions of other BN forms: tBN, rhombohedral BN (rBN) and wurtzite BN (wBN). The cBN phase grows epitaxially on the basal plane of hBN. The nucleation sites for cBN are revealed by HRTEM. They consist of nanoarches (sp 3 hybridized, highly curved nanostructures), frequently observed at the edges of the hBN crystallites in the starting materials. Based on HRTEM observations of specimens not fully transformed, a nucleation and growth model for cBN is proposed which is consistent with existing theoretical and experimental models. 相似文献