原子氧与紫外综合辐照对Kapton/Al性能的影响

Kapton/Al薄膜二次表面镜是一种广泛应用的热控涂层,用于维持航天器表面正常的工作温度。本文利用激光源原子氧设备对Kapton/Al薄膜二次表面镜进行了原子氧与紫外综合辐照试验,试验前后通过高精度微量天平、扫描电镜、紫外-可见-近红外分光光度计及X射线光电子能谱仪等测试分析手段观察了材料质量损失、表面形貌、光学性能随辐照时间的演化规律,分析了试验前后Kapton/Al薄膜二次表面镜表面成份的变化。结果表明:Kapton/Al薄膜二次表面镜的质量损失随辐照时间的增加呈线性增大,原子氧与紫外综合辐照造成的质量损失明显高于单独原子氧作用产生的质量损失;试验后试样表面呈"地毯"状形貌,且随辐照时间的增加表面粗糙度变大;Kapton/Al薄膜二次表面镜的光谱反射系数随综合辐照时间的增加而降低,致使太阳吸收比的变化不断增大;试验后试样表面成份变化明显,说明原子氧和紫外环境与Kapton/Al薄膜二次表面镜表面发生了复杂的物理化学作用。     

典型低轨辐照环境对MoS2-Ti薄膜真空摩擦学性能的影响

采用非平衡磁控溅射方法在9Cr18基底上制备了MoS₂-Ti薄膜，并对4组样品分别进行了电子辐照、电子/质子辐照、电子/质子/紫外辐照、电子/质子/紫外/原子氧辐照。采用SEM、XRD、XPS分析了辐照前后薄膜的结构和化学组成变化，通过摩擦试验考察了辐照前后薄膜的摩擦学性能，探讨了其损伤机制。研究结果表明，电子辐照、质子辐照、紫外辐照对MoS₂-Ti薄膜的显微组织结构、表面形貌及摩擦学性能没有明显影响。动能5 eV的原子氧对MoS₂-Ti薄膜表面有显著的损伤，主要表现在表面出现“绒毯”状形态，Mo、S和Ti元素被氧化成高价氧化物。原子氧辐照导致MoS₂-Ti薄膜摩擦起始和中段摩擦因数升高、中段摩擦因数不稳定，比磨损率增大。     

电场对Au/SiO_2及Au-Ag/SiO_2表面结构与原子迁移特性的影响

利用扫描俄歇微探针（SAM）和原子力显微镜（AFM）研究了SiO2衬底上在外加直流电场作用下沉积的Au薄膜及Au－Ag复层薄膜的表面形貌、结构变化及电迁移扩散行为。结果表明：①在衬底表面施加水平方向电场辅助沉积制备的Au薄膜其表面显示出平整的椭球形晶粒，并沿外电场方向呈织构取向。与未加电场的热蒸发沉积膜相比，具有较为均匀、有序的表面微观结构。②SiO2表面Au-Ag复层薄膜在直流电场作用下，Au，Ag物种同时向负极方向作走向迁移扩散，这与Au－Ag复层薄膜在Si（111）表面电迁移时Au，Ag分别向两极扩散的特点不同，反映了衬底性质对表面原子电迁移的影响。③Au－Ag复膜在电迁移过程中还发生了表面原子聚集状态的变化，原来沉积排布的细小晶粒在电迁移扩散过程中出现不均匀长大，导致薄膜表面粗糙度显著增加。     

模拟空间原子氧对Teflon FEP/Al薄膜性能的影响

在模拟空间环境原子氧辐照的条件下,采用固定的原子氧束流密度进行不同时间的辐照试验,研究了温控材料Teflon FEP/Al薄膜的质量损失、光学性能、表面形貌和表面粗糙度的演化规律.结果表明,材料的质量损失与原子氧的作用时间成正比.辐照前后材料的表面形貌和表面粗糙度发生明显变化,致使太阳吸收率发生明显变化,从而导致材料的光学性能发生变化.     

Cu/In原子比及硫化温度对于CuInS2薄膜性能影响

采用中频交流磁控溅射方法,在玻璃基底上沉积Cu-In预制膜,采用固态硫化法制备获得了CuInS2(CIS)吸收层薄膜.考察了预制膜Cu/In原子比及硫化温度对于CIS薄膜结构及禁带宽度影响.通过XRD及Raman光谱分析了薄膜结构,通过近红外透过曲线得出薄膜禁带宽度.结果表明,随着预制膜中Cu与In原子比(Cu/In)及硫化温度不断升高,薄膜CuAu(CA)相含量逐渐降低,黄铜矿(CH)相逐渐升高,薄膜结晶性逐渐改善.600℃以上硫化时薄膜中主要存在CH相CuInS2.薄膜禁带宽度随着预制膜中Cu/In原子比及硫化温度不断升高而升高,Cu/In原子比为1.05,硫化温度为500℃时薄膜禁带宽度可达1.40eV.     

感光溶胶—凝胶法制备光波导薄膜微图案

利用溶胶-凝胶法制备了有机-无机杂化光敏性SiO2-TiO2材料,在单晶硅基片上旋转涂膜,经前烘、紫外光固化、淋洗、后烘等步骤,在硅片上得到复制有掩模微图案的薄膜。用紫外-可见光-近红外分光光度计测试了薄膜的光透过吸收性质,用Fourier红外光谱仪测试了不同紫外光辐照时间下薄膜的红外振动吸收光谱,用高倍光学显微镜和扫描电子显微镜(SEM)观察制备得到的薄膜微图案。结果表明:薄膜在紫外可见光区域的光透过率约为90%,紫外光照能促使不同的官能团间发生缩聚反应,80℃前烘温度处理以及15min左右的紫外光辐照能够得到清晰、精确的薄膜微图案。     

低轨道紫外、带电粒子、热循环与原子氧协合效应研究进展

文章简述了原子氧、紫外辐照、带电粒子辐照和热循环等低轨道空间环境因素对材料性能的影响,综述了紫外辐照、带电粒子辐照和温度循环对原子氧与材料的交互作用的协合效应,为材料空间环境效应的地面模拟试验提供了参考,也为材料的多因素协合效应研究提供了依据。     

脉冲激光沉积生长单相的Nd_(1.85)Ce_(0.15)CuO_4薄膜及其激光感生热电电压效应

采用脉冲激光沉积(PLD)技术,在SrTiO3单晶衬底表面外延生长单相的1.85 Ce0.15 CuO4(NCCO)薄膜,并首次在斜切衬底上生长的NCCO薄膜中探测到激光感生热电电压(LITV)信号.实验研究表明,在低沉积温度、高沉积氧压和较大的激光脉冲重复频率下生长的NCCO薄膜中存在Nd1-xCexO<<1.75>,(NCO)杂相,是由于衬底表面吸附粒子扩散迁移困难所致;而高温下真空退火导致杂相的产生,则与NCCO的结构相变引起的热分解有关.通过提高沉积温度、降低沉积氧压和激光脉冲重复频率、并采用低温(T≤800℃)真空退火的方式,可以抑制杂相的形成.制备得到的单相的NCCO外延薄膜是一种新型的原子层热电堆材料,能量为1mJ的紫外脉冲激光的辐照,可以在倾斜的NCCO薄膜中诱导产生0.8V的LITV信号.     

C/C复合材料在原子氧辐照下的结构性能演变

通过分析失重率、显微形貌变化讨论了原子氧辐照对C/C复合材料以及SiC基体改性C/C复合材料(C/C-SiC)的损伤机制; 并通过热膨胀系数(CTE)、热扩散率(TD)以及弯曲强度等性能的变化, 进一步讨论了原子氧辐照损伤对材料热物理及力学性能影响。结果表明, C/C复合材料受原子氧辐照损伤是物理化学综合作用, 属于冲击诱发-增强表面化学刻蚀; SiC组元表现出良好的抗原子氧侵蚀性能, 阻碍了原子氧向材料内部侵蚀, 但是SiC组元在更长时间辐照后出现机械破损; C/C复合材料在原子氧辐照下失重率呈线性增加, 而C/C-SiC复合材料失重率小于C/C复合材料且增长幅度越来越小; C/C复合材料和C/C-SiC复合材料的整体结构性能在辐照损伤后发生了一定变化。     

配氧系数对Al2O3/Cu粉末微观组织及硬度的影响

研究了配氧系数对Al_2O_3/Cu粉末微观组织和硬度的影响。研究表明,低配氧系数下铝原子的逆向扩散十分明显,高配氧系数下铝原子的逆向扩散得到了有效控制。与配氧系数为0.6X和X相比,配氧系数为1.5X时制备的Al_2O_3/Cu粉末中铝元素分布最为均匀,平均显微硬度最高。     

Structural and optical properties of AlxOy/Pt/AlxOy multilayer absorber

We report on the microstructure and optical properties of Al_xO_y–Pt–Al_xO_y interference-type multilayer films, deposited by electron beam (e-beam) deposition onto corning 1737 glass, silicon (1 1 1) and copper substrates. The structural properties were investigated by Rutherford backscattering spectrometry, X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy and atomic force microscopy. The optical properties were extracted from specular reflection/transmission, diffuse reflectance and emissometer measurements. The stratification of the coatings consists of a semi-transparent middle Pt layer sandwiched between two layers of Al_xO_y. The top and bottom Al_xO_y layers were non-stoichiometric with no crystalline phases present. The Pt layer is in the fcc crystalline phase with a broad size distribution and spheroidal shape in and between the rims of Al_xO_y. The surface roughness of the stack was found to be comparable to the inter-particle distance. The optical calculations confirm a high solar absorptance of ∼0.94 and a low thermal emittance of ∼0.06 for the multilayer stack, which is attributed not only to the optimized nature of the multilayer interference stacks, but also to the specific surface morphology and texture of the coatings. These optical characteristics validate the spectral selectivity of the Al_xO_y–Pt–Al_xO_y interference-type multilayer stack for use in high temperature solar-thermal applications.     

Optimization of AlxOy/Pt/AlxOy multilayer spectrally selective coatings for solar-thermal applications

Spectrally selective Al_xO_y/Pt/Al_xO_y multilayer absorber coatings were deposited onto corning 1737 glass, Si (111) and copper substrates using electron beam (e-beam) vacuum evaporator at room temperature. The employment of ellipsometric measurements and optical simulation was proposed as an effective method to optimize and deposit multilayer solar absorber coatings. The optical constants (n and k) measured using spectroscopic ellipsometry, showed that both Al_xO_y layers, which used in the coatings, were dielectric in nature and the Pt layer was semi-transparent. The optimized multilayer coatings exhibited high solar absorptance α ∼ 0.94 ± 0.01 and low thermal emittance ? ∼ 0.06 ± 0.01 at 82 °C. The Rutherford backscattering spectroscopy (RBS) data of Al_xO_y/Pt/Al_xO_y multilayer absorber indicated the Al_xO_y layers present in the coating were nearly stoichiometry. The scanning electron microscope analysis (SEM) result indicated that the average diameter and inter-particles distance of Pt grains were statistically about 146 ± 0.17 nm and 6-10 ± 0.2 nm respectively.     

Interfacial microstructure of NiSix/HfO2/SiOx/Si gate stacks

Integration of NiSi_x based fully silicided metal gates with HfO₂ high-k gate dielectrics offers promise for further scaling of complementary metal-oxide- semiconductor devices. A combination of high resolution transmission electron microscopy and small probe electron energy loss spectroscopy (EELS) and energy dispersive X-ray analysis has been applied to study interfacial reactions in the undoped gate stack. NiSi was found to be polycrystalline with the grain size decreasing from top to bottom of NiSi_x film. Ni content varies near the NiSi/HfO_x interface whereby both Ni-rich and monosilicide phases were observed. Spatially non-uniform distribution of oxygen along NiSi_x/HfO₂ interface was observed by dark field Scanning Transmission Electron Microscopy and EELS. Interfacial roughness of NiSi_x/HfO_x was found higher than that of poly-Si/HfO₂, likely due to compositional non-uniformity of NiSi_x. No intermixing between Hf, Ni and Si beyond interfacial roughness was observed.     

Optimization of the thickness of glass/TiO2/Ag/Ti/TiO2/SiON multilayer film

The TiO₂/Ag/Ti/TiO₂/SiON multilayer film was deposited on glass substrate at room temperature using magnetron sputtering method. By varying the thickness of each layer, the optical property was optimized to achieve good selective spectral filtering performance in Vis-NIR region. The multilayer film achieves maximum transmittance of 92.7% at 690 nm, in which the both TiO₂ layers are 33 nm. For good conductivity and transmittance, a 4 nm Ti layer and a 30 nm SiON layer are necessary.     

Effect of pressure onTc in La2-xBaxCuO4 withx=0.125

The superconducting transition temperature,T _c , of La_2–x Ba _x CuO₄ has been measured under high pressure up to 8 GPa.T _c is found to change drastically at the pressure where the structural phase transition takes place. This finding clearly indicates that there exists an intimate relation between the crystal structure and superconductivity.     

t-Model mechanism of high-Tc cuprates

A doublon formalism ofd-p model Hubbard Hamiltonian is studied only with transfer integrals, and without the superexchange term. This gives excellent doping-dependent features ofT _c in high-T _c cuprates.     

Magnetron sputtering of TiOxNy films

This article reports on the characterization and preparation of N-doped titanium dioxide (TiO₂) films by reactive magnetron sputtering from Ti(99.5) targets in a mixture of Ar/O₂/N₂ atmosphere on unheated glass substrates. A dual magnetron system supplied by a dc bipolar pulsed power source was used to sputter the TiO_xN_y films. The amount of N in the TiO_xN_y film ranges from 5 to 40 at%. Its structure was measured using X-ray diffraction (XRD), the optical band gap was calculated from Tauc plots and the decrease of the water contact angle α_ir after the film activation by UV irradiation was investigated as a function of at% of N in the TiO_xN_y film. The yellow-coloured TiO_xN_y films with high (≈8 at%) amount of N exhibited a strong decrease of the band gap E_g down to 2.7 eV. A significant decrease of the water contact angle α_ir after UV irradiation has been observed for 2 μm thick transparent nanocrystalline (anatase+rutile) N-doped TiO₂ films containing less than 6 at% of N.     

Properties of CdxPb1−xTe thin films

Thin films of Cd_xPb_1?xTe have been grown on mica substrates using a flash evaporation technique and isothermal substrate heaters. The Cd concentration of the films was found to increase with decreasing substrate temperature and increasing deposition rates. The Hall coefficient changed from positive to negative with increasing substrate temperature, as did the Seebeck coefficient. Both these changes were associated with an increase in the rate of re-evaporation of Te and an improvement in the crystallinity of the films. Carrier mobilities less than bulk values were obtained; scattering mechanisms are discussed.