A two-stage shape retrieval (TSR) method with global and local features

A robust two-stage shape retrieval (TSR) method is proposed to address the 2D shape retrieval problem. Most state-of-the-art shape retrieval methods are based on local features matching and ranking. Their retrieval performance is not robust since they may retrieve globally dissimilar shapes in high ranks. To overcome this challenge, we decompose the decision process into two stages. In the first irrelevant cluster filtering (ICF) stage, we consider both global and local features and use them to predict the relevance of gallery shapes with respect to the query. Irrelevant shapes are removed from the candidate shape set. After that, a local-features-based matching and ranking (LMR) method follows in the second stage. We apply the proposed TSR system to MPEG-7, Kimia99 and Tari1000 three datasets and show that it outperforms all other existing methods. The robust retrieval performance of the TSR system is demonstrated.     

A semi-automated system based on level sets and invariant spatial interrelation shape features for Caenorhabditis elegans phenotypes

Caenorhabditis elegans shares several molecular and physiological homologies with humans and thus plays a key role in studying biological processes. As a consequence, much progress has been made in automating the analysis of C. elegans. However, there is still a strong need to achieve more progress in automating the analysis of static images of adult worms. In this paper, a three-phase semi-automated system has been proposed. As a first phase, a novel segmentation framework, based on variational level sets and local pressure force function, has been introduced to handle effectively images corrupted with intensity inhomogeneity. Then, a set of robust invariant symbolic features for high-throughput screening of image-based C. elegans phenotypes are extracted. Finally, a classification model is applied to discriminate between the different subsets. The proposed system demonstrates its effectiveness in measuring morphological phenotypes in individual worms of C. elegans.     

(2+1)维Gardner方程的对称、约化及其群不变解

利用经典李群方法,得到了一类(2+1)维Gardner方程的显式解,推广了唐和陈勇的某些结果,并且得到了该方程的对称、约化及其群不变解.     

Phase relations in Cu- RO1.5- O (R < Ho,Er, Yb) and gibbs energy of formation of Cu2R2O5 (R < Ho,Er, Yb) between 1000 and 1325K

Phase relations in Cu-RO_1.5-O(R < Ho,Er,Yb) ternary systems at 1273K have been established by isothermal equilibration of samples containing different ratios of Cu:R(R < Ho,Er,Yb) in flowing air or high purity argon atmosphere for four days. The samples were then rapidly cooled to ambient temperature and the coexisting phases were identified by powder x-ray diffraction analysis. Only one ternary oxide, Cu₂R₂O₅(R < Ho,Er,Yb) was found to be stable. The chemical potential of oxygen for the coexistence of the three phase assemblage, Cu₂O + R₂O₃ + Cu₂R₂O₅(R < Ho,Er,Yb) has been measured by employing the solid-state galvanic cells,< (−) Pt, Cu₂O + Ho₂O₃+ Cu₂Ho₂O₅//CSZ//Air (Po₂< 2.12 × 10⁴ Pa), Pt (+) (−) Pt, Cu₂O + Er₂O₃+ Cu₂Er₂O//CSZ//Air (Po₂< 2.12 × 10⁴ Pa), Pt (+) (−) Pt, Cu₂O + Yb₂O₃ + Cu₂Yb₂O₅//CSZ//Air (Po₂ < 2.12 × 10⁴ Pa), Pt (+) in the temperature range of 1000 to 1325K. Combining the measured emf of the above cells with the chemical potential of oxygen at the reference electrode, using the Nernst relationship, gives for the reactions, 2Cu₂O(s) + 2Ho₂O₃(s) + O₂(g) → 2Cu₂Ho₂O₅(s) (1) 2Cu₂O(s) + 2Er₂O₃(s) + O₂(g) → 2Cu₂Er₂O₅(s) (2) and 2Cu₂O(s) + 2Yb₂O₃(s) + O₂(g) → 2Cu₂Yb₂O₅(s) (3) δΜo₂ = −219,741.3 + 145.671 T (±100) Jmol⁻¹ (4) δΜo₂ = −222,959.8 + 147.98 T(±100) Jmol⁻¹ (5) and δΜo₂ = −231,225.2 + 151.847 T(±100) Jmol⁻¹ (6) respectively. Combining the chemical potential of oxygen for the coexistence of Cu₂O + R₂O₃ + Cu₂R₂O₅(R− Ho,Er,Yb) obtained in this study with the oxygen potential for Cu₂O + CuO equilibrium gives for the reactions, 2 CuO(s) + Ho₂O₃(s) → Cu₂Ho₂O₅(s) (7) 2 CuO(s) + Er₂O₃(s) → Cu₂Er₂O₅(s) (8) and 2 CuO(s) + Yb₂O₃(s) → Cu₂Yb₂O₅(s) (9) δG‡ < 22,870.3 − 23.160 T (±100) Jmol⁻¹ (10) δG‡ < 21,261.1 − 22.002 T (±100) Jmol⁻¹ (11) and δG‡ < 17,128.4 - 20.072 T (±100) Jmol^-1 (12) It can be clearly seen that the formation of Cu₂R₂O₅R < Ho,Er,Yb) from the component oxides is endothermic. Further, Cu₂R₂O₅(R < Ho,Er,Yb) are an entropy stabilized phases. Based on the results obtained in this study, the oxygen potential diagram for Cu-R-O(R < Ho,Er,Yb) ternary system at 1273K has been composed.     

通过Ir(ppy)3敏化黄光发射的白色有机电致发光器件

通过Ir(ppy)3的磷光敏化作用,制作了结构为:ITO/2T-NATA(20 nm)/NPBX(20 mm)/CPB∶x%Ir(ppy)3∶0.5%rubrene(8 nm)/NPBX(5 nm)/DPVBi(30 nm)/Alq(30 nm)/LiF(0.5 nm)/Al的有机白光器件.当Ir(ppy)3的掺杂浓度为6%时,器件的性能最好.在15 V的电压下最大亮度达到24 960 cd/m2,在电压为8 V的情况下,发光效率达到最大,为5.17 cd/A.该器件的色坐标在白光等能点附近,是色度较好的白光器件.     

The Zn(S,O,OH)/ZnMgO buffer in thin film Cu(In,Ga)(S,Se)2‐based solar cells part I: Fast chemical bath deposition of Zn(S,O,OH) buffer layers for industrial application on Co‐evaporated Cu(In,Ga)Se2 and electrodeposited CuIn(S,Se)2 solar cells

This paper is focused on the basic study and optimization of short time (<10 min) Chemical Bath Deposition (CBD) of Zn(S,O,OH) buffer layers in co‐evaporated Cu(In,Ga)Se₂ (CIGSe) and electrodeposited CuIn(S,Se)₂ ((ED)‐CIS) solar cells for industrial applications. First, the influence of the deposition temperature is studied from theoretical solution chemistry considerations by constructing solubility diagrams of ZnS, ZnO, and Zn(OH)₂ as a function of temperature. In order to reduce the deposition time under 10 min, experimental growth deposition studies are then carried out by the in situ quartz crystal microgravimetry (QCM) technique. An optimized process is performed and compared to the classical Zn(S,O,OH) deposition. The morphology and composition of Zn(S,O,OH) films are determined using SEM and XPS techniques. The optimized process is tested on electrodeposited‐CIS and co‐evaporated‐CIGSe absorbers and cells are completed with (Zn,Mg)O/ZnO:Al windows layers. Efficiencies similar or even better than CBD CdS/i‐ZnO reference buffer layers are obtained (15·7% for CIGSe and 8·1% for (ED)‐CIS). Copyright © 2009 John Wiley & Sons, Ltd.     

高浓度掺杂Ir(ppy)3和Rubrene的高效率有机发光器件

通过采用CBP主体材料中高浓度掺杂Ir(ppy)a和Rubrene,利用Ir(ppy)3敏化黄光发射的方法,制备了高性能的有机电致发光器件(OLED).器件采用的结构为:ITO/2T-NATA(20 nm)/NPBX(40 nm)/x%CBP:y%(ppy)3:z%rubrene(20 nm)/NPBX(10 nm)/DPVBi(60 nm)/Alq(60 nm)/LiF(1 nm)/Al,在该器件中限定.各功能层的厚度保持不变,当CBP、Ir(ppy)3、Rubrene各组分的比例x、y、z分别为:65%、20%、15%时,器件的性能较好,在电压为12 V时,其电流效率最大为21.1 ed/A.在电压为24 V时,其亮度为最大,达到22 670 ca/m2.该器件的色度随电压的增加逐步趋近于白光等能点(0.33,0.33).     

基于(2,1,7)卷积码实现低误码率通信的DSP设计

为降低数字通信系统传输差错并提高可靠性,从工程应用角度出发,在DSP硬件平台上实现(2,1,7)卷积码。用MATLAB仿真影响(2,1,7)卷积码性能的各个参数,与约束度为3和码率为3/4、2/3的卷积码进行对比,其仿真结果为DSP硬件实现奠定理论基础。最后选用TI公司的TMS320DM6437型号,在CCS3.3开发环境上运行。实验表明:约束度为7、码率为1/2的卷积码在较低的信噪比(SNR=6 dB)下误码率则可达到10-6,且DSP实现的(2,1,7)卷积码方便可行,快速稳定,译码准确,并具有较强的纠错能力。     

Impact of oxygen concentration during the deposition of window layers on lowering the metastability effects in Cu(In,Ga)Se2/CBD Zn(S,O) based solar cell

The purpose of the present paper is to focus on the impact of oxygen gas partial pressure during the sputtering of i‐ZnO and ZnMgO on the transient behavior of Cu(In,Ga)Se₂ (CIGSe) based solar cells parameters when a CBD‐Zn(S,O) buffer layer is used. Based on electrical characterization of cells, it is observed that the effect of light soaking is different on J–V characteristics depending on whether oxygen is or is not present during the first deposition time of the i‐ZnO or ZnMgO layers. In fact, when cells are prepared with standard i‐ZnO, the efficiencies are very low and a pronounced transient behavior is observed. However, when the first 10 nm of i‐ZnO or ZnMgO is formed by sputtered layer without adding oxygen during the process, depending on the thickness of the buffer layer, the transient effects strongly decreases. It is then possible to get stable cells reaching efficiencies quite similar to the CdS reference cells, especially with ZnMgO, without any post‐treatments. Copyright © 2015 John Wiley & Sons, Ltd.     

Growth of Cu(In,Ga)Se2 thin films by a novel single‐stage route based on pulsed electron deposition

We report a novel route for growing Cu(In,Ga)Se₂ (CIGS) thin films, based upon the Pulsed Electron Deposition (PED) technique. Unlike other well‐known deposition techniques, PED process allows the stoichiometric deposition of CIGS layers in a single stage, without requiring any further treatments for Cu/(In + Ga) ratio adjustment nor selenization. The structural properties of polycrystalline CIGS films strongly depend on the growth temperature, whereas post‐deposition annealing enhances the grain size and the <112> out‐of‐plane preferred orientation of the chalcopyrite structure, without affecting the film composition. Preliminary measurements of the performances of solar cells based on these films confirm the great potentiality of PED‐grown CIGS as absorber layers. Copyright © 2011 John Wiley & Sons, Ltd.