Enhancement of Critical Current Density in Graphite Doped MgB2 Wires

Graphite doped MgB2-xCx (x = 0.00, 0.05, 0.10) wires were fabricated via the in situ powder-in-tube method in flowing argon by using low carbon steel tubes as the sheath materials. With the increase of graphite concentration,the amount of unreacted graphite in the core area increases, and the average grain size of MgB2 decreases. It is found that the critical current density Jc can be significantly improved by graphite doping. The MgB2 wire with x = 0.05 exhibits the best Jc value of 16710 A/cm^2 at 6K, 4.5T, but the MgB1.9C0.1 wire has the highest Jc value of 2060 A/cm^2 at 6 K, 8 T. It is suggested that the enhancement of Jc is due to not only the improvement of the microstructure features but also the introduction of pinning centres.     

Superconducting Transition Temperature and Metal--Semiconductor Transition Temperature in YBa2Cu4O8/La0.67Ca0.33MnO3/YBa2Cu4O8 Trilayer Films

YBa₂Cu₄O₈/La_0.67Ca_0.33MnO₃/YBa₂Cu₄O₈(YBCO/LCMO/YBCO) trilayer films were prepared by magnetron facing-target sputtering. For the first time, the oscillatory behaviour of superconducting transition temperature T_c,ON with the thickness of LCMO (d_L) has been observed. The strongest nonmonotonic information in the T_c,ON--d_L curves appears clearly when d_L is larger than the critical thickness d_L^CR. The metal--semiconductor transition temperature can only be detected at d_L>d_L^CR. The dependence on the ferromagnetic spacer layer in YBCO/LCMO/YBCO systems suggests strongly the interplay of ferromagnetic and superconducting couplings.     

Near Infrared Photoluminescence from Yb,Al Co-implanted SiO2 Films on Silicon

Intense room-temperature near infrared （NIR） photoluminescence （980 nm and 1032 nm） is observed from Yb,Al co-implanted SiO2 films on silicon. The optical transitions occur between the ^2F5/2 and ^2F7/2 levels of Yb^3＋ in SiO2. The additional Al-implantation into SiO2 films can effectively improve the concentration quenching effect of Yb^3＋ in SiO2. Photoluminescence excitation spectroscopy shows that the NIR photoluminescence is due to the non-radiative energy transfer from Al-implantation-induced non-bridging oxygen hole defects in SiO2 to Yb^3＋ in the Yb-related luminescent complexes. It is believed that the defect-mediated luminescence of rare-earth ions in SiO2 is very effective.     

Electronic Structure and Magnetic Properties of SmCo7-xZrx

The electronic structure and magnetism of SmCo_7-xZr_x alloy are investigated using the spin-polarized MS-X. method. The results show that a few of electrons are transferred to the Sm(5d⁰) orbital due to orbital hybridization between Sm and Co atoms. The exchange interactions between 3d and 5d electrons are more important than the polarization effects of the conductive electrons, thus it is the main reason resulting in the long-range ferromagnetic order in SmCo_7-xZr_x. The Curie temperature of SmCo_7-xZr_x is generally lower than that of corresponding pure Co, which may be explained by the weaker average coupling strength between Co lattices due to some negative couplings mainly occurring of 2e site. The calculated results for the Sm₅Co₃₂Zr₂ cluster may lead to a better understanding of why SmCo_7-xZr_x is stable phase. Since the spin-up DOS peak of d electrons at E_F arises and the bonding of electrons at E_F strengthens with increasing Zr concentration, which results in the internal energy of the system decrease, the stable ferromagnetic order forms in SmCo_7-xZr_x.     

Response of Makrofol polycarbonate plastic track detector to 1.1 MeV/N 54 132 Xe-ion

Makrofol polycarbonate plastic track detectors have been exposed to ₅₄ ¹³² Xe -ions of energy 1.1 MeV/N from the cyclotron beam. The bulk etch rate and track etch rate are measured for different temperatures and the activation energies are calculated. The maximum etched track length is compared with the theoretically computed range. The critical energy loss is (dE/dx) _c =5 MeV cm² mg⁻¹ for this detector material.     

Characteristics of High In-Content InGaN Alloys Grown by MOCVD

InN and In0.46 Ca0.54N films are grown on sapphire with a CaN buffer by metalorganic chemical vapour deposition （MOCVD）. Both high resolution x-ray diffraction and high resolution transmission electron microscopy results reveal that these films have a hexagonal structure of single crystal. The thin InN film has a high mobility of 4 75 cm^2V^-1s^-1 and that oflno.46 Gao.54N is 163 cm^2 V^-1s^-1. Room-temperat ure photoluminescence measurement of the InN film shows a peak at 0.72eV, confirming that a high quality InN film is fabricated for applications to full spectrum solar cells.     

Numerical Study on a Lateral Double-Gate Tunnelling Field Effect Transistor

A novel lateral double-gate tunnelling field effect transistor （DG-TFET） is studied and its performance is presented by a two-dimensional device simulation with code ISE. The result demonstrates that this new tunnelling transistor allows for the steeper sub-threshold swing below 60mV/dec, the super low supply voltage （operable at VDD 〈 0.3 V） and the rail-to-rail logic （significant on-state current at the drain-source voltage VDS = 50mV） for the aggressive technology assumptions of the availability of high-k/metal stack with equivalent gate oxide thickness EOT =0.24 nm and the work function difference 4.5 eV of materials.     

Magnetic Properties of Exchange-Coupled Dual-Layer SmTbCo Thin Films

Exchange-coupled SmTbCo dual-layer media are prepared by an r.f magnetron sputtering system and their magnetic properties are investigated. The prepared SmTbCo dual layer is composed of a 340 emu/cm^3 TM-rich readout layer and a 5.80 kOe RE-rich memory layer, meeting the requirements of high saturation magnetization and large coercivity for hybrid recording. Through exchange coupling, the coercivity of the high-saturation- magnetization SmTbCo layer is greatly enhanced from 1.85 to 5.96 kOe. The calculated interface wall energy for Sm6.65Tb12.35Co81 （20nm）/Sm1.22Tb42.16Co56.62 （20hm） is about 3.85erg/cm62. The reversal magnetization of the SmTbCo exchange-coupling dual-layer films is analysed based on a micro-magnetic model.     

Relation of Structure and Superconductivity in Self-Compensating Y1-χCaχBa2-χLaχCu3Oy

The self-compensating compound of Y1-χ CaχBa2-χLaχ Cu3Oy is synthesized through a solid-state reaction method with χ from 0.25 to 0.55. Structural and superconducting properties have been investigated by χ-ray diffraction, Rietveld refinement, and dc magnetization measurement, respectively. The impure peaks appear when χ is more than 0.5 in the diffraction pattern. Orthorhombic-tetragonal transition occurs at χ = 0.45. Some local structural parameters, such as Cu（1）-O（4）, Cu（2）-O（4） bond lengths, change randomly in a narrow range. The relationship between the character of （Ba/La）-O plane and Tc is rather interesting. We attribute the behaviour of superconductivity to the joint effects of these local structural parameters. The results give the evidence that the influence of the structural change on superconductivity is essential and independent of carrier concentration.     

Determination ofβ-particle longitudinal polarization in the decay of210Bi

The longitudinal polarization ofβ-particles from²¹⁰Bi has been measured at three values of the energy, using a double-focusing crossed field electron spin polarimeter. The results are:E=150keV,P/(?υ/c)=0.70±0.07,E=220keVP/(?υ/c)=0.70±0.05,E=300keV,P/(?υ/c)=0.71±0.05.     

Coherent bremsstrahlung at the HERA collider

We consider a new type of radiation at colliders with short bunches—coherent bremsstrahlung (CBS) which is the radiation of the first bunch particles caused by the collective electromagnetic field of the second bunch. The number of CBS photons for a single collision isdN _λ ≈N ₀ dE _λ /E _λ > in the energy rangeE _λ ?E _c = 4γ ₁ ² ?c/l ₂. Hereγ ₁=E ₁/m ₁ c ²;l ₂ is the length of the opposing (second) bunch andN ₀ is proportional toN ₁ N ₂ ² whereN _j is thej-th bunch population. For the HERA colliderN ₀=14,E _c =73 eV in the case when photons are emitted by protons andN ₀=6·10⁷,E _c =24 keV—when photons are emitted by electrons. Unusual properties of such a coherent bremsstrahlung and the possibility to use CBS for fast beam steering and for luminosity optimization are discussed.     

Electronic States and Spatial Charge Distribution of Single Mn Impurity in Diluted Magnetic Semiconductors

The electronic and magnetic properties as well as the spatial charge distribution of single Mn impurity in III--V diluted magnetic semiconductors are obtained when the degeneracy of the p orbits contributed from the four nearest-neighbouring As(N) atoms is taken into account. We show that in the ground state, the Mn spin is strongly antiferromagnetically coupled to the surrounding As(N) atoms when the p-d hybridization V_pd is large and both the hole level E_v and the impurity level E_d are close to the Fermi energy. The spatial charge distribution of the Mn acceptor in the (110) plane is non-spherically symmetric, in good agreement with the recent STM images.     

First-Principles Study on the Electronic Structures for Y^3＋：PbWO4 Crystals

The possible defect models of Y^3＋：PbWO4 crystals are discussed by defect chemistry and the most possible substituting positions of the impurity Y^3＋ ions are studied by using the general utility lattice program （GULP）. The calculated results indicate that in the lightly doped Y^3＋ ：PWO crystal, the main compensating mechanism is [2Ypb^＋ ＋ VPb^2-], and in the heavily doped Y^3＋ ：PWO crystal, it will bring interstitial oxygen ions to compensate the positive electricity caused by YPb^＋, forming defect clusters of [2Ypb^＋ ＋Oi^2-] in the crystal. The electronic structures of Y3＋ ：PWO with different defect models are calculated using the DV-Xα method. It can be concluded from the electronic structures that, for lightly doped cases, the energy gap of the crystal would be broadened and the 420nm absorption band will be restricted; for heavily doped cases, because of the existence of interstitial oxygen ions, it can bring a new absorption band and reduce the radiation hardness of the crystal.     

Characteristics of Nd：GdVO4 Laser with Different Nd-Doping Concentrations

We report the properties of a compact diode-pumped continuous-wave Nd：GdV04 laser with a linear cavity and different Nd-doped laser crystals. In a 0.2at.% Nd-doped Nd：GdVO4 laser, 1.54 W output laser power is achieved at 912nm wavelength with a slope efficiency of 24.8% at an absorbed pump power of 9.4W. With 0.3at.% Nd-doping concentration, we can obtain the either single-wavelength emission at 1064nm or 912nm or the dual-wavelength emission at 1064nm and 912nm by controlling the incident pump power. From an incident pump power of 11.6 W, the 1064nm emission between ^4Fa/2 and ^4I11/2 is suppressed completely by the 912nm emission between ^4Fa/2 and ^4I9/2. We obtain 670 mW output of the 912nm single-wavelength laser emission with a slope efficiency of 5.5% by taking an incident pump power of 18.4 W. Using a Nd：GdV04 laser with 0.4at.% Nd-doping concentration, we obtain either the single-wavelength emission at 1064nm or the dual-wavelength emission at both 1064nm and 912nm by increasing the incident pump power. We observe a strong competition process in the dualavelength laser.     

Characterization of GaAs/AlxGa1-xAs heterointerface defects by means of capacitive measurememts

x Ga_1-xAs heterojunctions grown by liquid-phase epitaxy. Interface states with hiqh concentration, N_t=3×10¹¹ cm^-2 and energy level E_c-E_t=0.14 eV distributed in a box 150 Å wide at the heterointerface and acting as electron traps are observed. The possible origin could be the isolated arsenic vacancy V_As in n-GaAs. Received: 25 April 1996/Accepted: 22 January 1997     

Cross section and resonance strength measurements of 19F(p, αγ)16O at Ep= 200–800 keV

An excitation function of the ¹⁹F(p, αγ)¹⁶O reaction has been measured over the proton beam energy range E_p= 200–800 keV using a 4 π NaI summing spectrometer. A new resonance was found at E_R= 237 keV and its properties Γ_R, σ_R and ωγ have been extracted. The strengths of all resonances at E_p= 200–800 keV have been also extracted. The importance of the 1⁺ resonance at E_R= 11 keV is discussed and its width has been estimated taking into account interference effects with the strong 1⁺ resonance at E_R= 340 keV. The reaction rates have been calculated over a wide range of temperatures and compared with the rates of the (p, α₀) and (p, α_π) branches of the ¹⁹F(p, α)¹⁶O reaction. Received: 21 June 1999 / Revised version: 30 September 1999     

Optical phonons in CuAlS2

The optical phonons at k=0 of CuAlS₂ have been investigated by Raman scattering, infrared reflectivity and absorption measurements from 50 to 1000 cm^-1 at T=300 K. Eleven of the thirteen expected optically active phonons have been observed and identified with respect to their symmetry types. The phonon frequencies appear in a range from 498 to 76 cm^-1 with predominant polar modes at 445 and 266 cm^-1. The dielectric dispersion for E ⊥ c and E ∥ c has been determined by Kramers-Kronig integrations.     

Structural Transition of Gd2O3：Eu Induced by High Pressure

The structural transition of bulk and uano-size Gd2O3：Eu are studied by high pressure energy disperse x-ray diffraction （XRD） and high pressure photoluminescence. Our results show that in spite of different size of Gd2O3 particles, the cubic structure turns into a possible hexagonal one above 13.4 GPa. When the pressure is released, the sample reverses to the monoclinic structure. No cubic structure presents in the released samples. That is to say, the compression and relaxation of the sample leads to the cubic Gd2O3：Eu then turns into the monoclinic one.     

Electrical Properties of La-Doped Al2O3 Films on Si （100） Substrates as a High-Dielectric-Constant Gate Material

Amorphous La-doped Al2O3 （La： Al2O3） thin films are deposited on n-type （100） Si substrates by rf magnetron co-sputterlng. The composition of the deposited films is measured by energy dispersive x-ray spectroscopy： Capacitance-voltage measurement shows that the dielectric constant k of La-doped Al2O3 films ranges from 8.5 to 11.6 with the increasing La content, and the highest k value of 11.6 is obtained for the 20.14% La content film. In the structure of the Al/La：Al2O3/Si metal oxide semiconductor, the dominant conduction stems from the space- charge-limited current at different temperatures. In addition, the wavelength dependence of the transmittance is studied by ultraviolet spectroscopy and the band gap of all the deposited films is above 5.5eV. The results demonstrate that La-doped Al2O3 can meet the requirement of next-generation gate materials.     

电子辐照硅层中缺陷能级的研究

用12MeV电子辐照硅p⁺n结,在硅中除引入氧空位E₁(E_c-0.19eV),双空位E₂(E_c-0.24eV)和E₄(E_c-0.44eV)外,还引入缺陷E₃(E_c-0.37eV)。用DLTS方法和反向恢复时间测量研究了这些能级的退火行为,可以看到,E₃的退火温度最高(≈520℃)。由退火特 关键词：