Effect of LaNiO3 electrodes and lead oxide excess on chemical solution deposition derived Pb(Zrx,Ti1 − x)O3 films

The effects of LaNiO₃ (LNO) and Pt electrodes on the properties of Pb(Zr_x,Ti_1 − x)O₃ (PZT) films were compared. Both LNO and PZT were prepared by chemical solution deposition (CSD) methods. Specifically, the microstructure of LNO and its influence on the PZT properties were studied as a function of PbO excess. Conditions to minimize the Pyrochlore phase and porosity were found. Remnant polarization, coercive field and fatigue limit were improved in the PZT/LNO films relative to the PZT/Pt films. Additionally, the PZT crystallization temperature over LNO was 500 °C, about ~ 50 °C lower than over Pt. The crystallization temperature reported here is amongst the lowest values for CSD-based PZT films.     

Preparation and characterization of CuIn1 − xGaxSe2 − ySy thin film solar cells by rapid thermal processing

This paper describes the synthesis and characterization of CuIn_1 − xGa_xSe_2 − yS_y (CIGSeS) thin-film solar cells prepared by rapid thermal processing (RTP). An efficiency of 12.78% has been achieved on ~ 2 µm thick absorber. Materials characterization of these films was done by SEM, EDS, XRD, and AES. J-V curves were obtained at different temperatures. It was found that the open circuit voltage increases as temperature decreases while the short circuit current stays constant. Dependence of the open circuit voltage and fill factor on temperature has been estimated. Bandgap value calculated from the intercept of the linear extrapolation was 1.1-1.2 eV. Capacitance-voltage analysis gave a carrier density of 4.0 × 10¹⁵ cm^− 3.     

Band alignment of Cd(1 − x)ZnxS produced by spray pyrolysis method

Cd_(1 − x)Zn_xS thin films have been grown on glass substrates by the spray pyrolysis method using CdCl₂ (0.05 M), ZnCl₂ (0.05 M) and H₂NCSNH₂ (0.05 M) solutions and a substrate temperature of 260 °C. The energy band gap, which depends on the mole fraction × in the spray solution used for preparing the Cd_(1 − x)Zn_xS thin films, was determined. The energy band gaps of CdS and ZnS were determined from absorbance measurements in the visible range as 2.445 eV and 3.75 eV, respectively, using Tauc theory. On the other hand, the values calculated using Elliott-Toyozawa theory were 2.486 eV and 3.87 eV, respectively. The exciton binding energies of Cd_0.8Zn_0.2S and ZnS determined using Elliott-Toyozawa theory were 38 meV and 40 meV, respectively. X-ray diffraction results showed that the Cd_(1 − x)Zn_xS thin films formed were polycrystalline with hexagonal grain structure. Atomic force microscopy studies showed that the surface roughness of the Cd_(1 − x)Zn_xS thin films was about 50 nm. Grain sizes of the Cd_(1 − x)Zn_xS thin films varied between 100 and 760 nm.     

Electrical conductivity of 5 mol.% Yb2O3 and 5 mol.% Gd2O3 co-doped Sm2Zr2O7

Sm₂Zr₂O₇ co-doped with and without 5 mol.% Yb₂O₃ and 5 mol.% Gd₂O₃ were prepared by a pressureless-sintering method at 1973 K for 10 h in air. The relative density, structure and electrical conductivity were investigated by the Archimedes method, X-ray diffraction, scanning electron microscopy and impedance spectra measurements. Both Sm₂Zr₂O₇ and (Sm_0.9Gd_0.05Yb_0.05)₂Zr₂O₇ ceramics exhibit a single phase of pyrochlore-type structure. The grain conductivity, grain-boundary conductivity and total conductivity obey the Arrhenius relation, respectively, and gradually increase with increasing temperature from 723 to 1173 K. (Sm_0.9Gd_0.05Yb_0.05)₂Zr₂O₇ ceramic is the oxide-ion conductor in an oxygen partial pressure range of 1.0 × 10⁻⁴ to 1.0 atm at all test temperature levels. The grain conductivity, grain-boundary conductivity and total conductivity of (Sm_0.9Gd_0.05Yb_0.05)₂Zr₂O₇ with dual Yb³⁺ + Gd³⁺ doping are higher than those of undoped Sm₂Zr₂O₇ at identical temperature levels.     

Synthesis and electrochemical properties of Ti doped Li3 − xFe2 − xTix(PO4)3/C cathode materials

Li_3 − xFe_2 − xTi_x(PO₄)₃/C (x = 0-0.4) cathodes designed with Fe doped by Ti was studied. Both Li₃Fe₂(PO₄)₃/C (x = 0) and Li_2.8Fe_1.8Ti_0.2(PO₄)₃/C (x = 0.2) possess two plateau potentials of Fe³⁺/Fe²⁺ couple (around 2.8 V and 2.7 V vs. Li⁺/Li) upon discharge observed from galvanostatic charge/discharge and cyclic voltammetry. Li_2.8Fe_1.8Ti_0.2(PO₄)₃/C has higher reversibility and better capacity retention than that of the undoped Li₃Fe₂(PO₄)₃/C. A much higher specific capacity of 122.3 mAh/g was obtained at C/20 in the first cycle, approaching the theoretical capacity of 128 mAh/g, and a capacity of 100.1 mAh/g was held at C/2 after the 20th cycle.     

Electrical properties of lead-free thick film NTC thermistors based on perovskite-type BaCoxCo2xBi1 − 3xO3

Lead-free thick film negative temperature coefficient (NTC) thermistors based on perovskite-type BaCo^II_xCo^III_2xBi_1 − 3xO₃ (x ≤ 0.1) were prepared by mature screen-printing technology. The microstructures of the thick films sintered at 720 °C were examined by X-ray diffraction and scanning electron microscopy. The electrical properties were analyzed by measuring the resistance-temperature characteristics. For the BaBiO₃ thick films, the room-temperature resistivity is 0.22 MΩ cm, while the room-temperature resistivity is sharply decreased to about 3 Ω cm by replacing of Bi with a small amount of Co. For compositions 0.02 ≤ x ≤ 0.1, the values of room-temperature resistivity (ρ₂₃), thermistor constant (B_25/85) and activation energy are in the range of 1.995-2.975 Ω cm, 1140-1234 K and 0.102-0.111 eV, respectively.     

Enhanced thermoelectric properties of NaCo2O4 by adding ZnO

The primary phase present in the as-sintered Na(Co_1 − xZn_x)₂O₄ (0 ≤ x ≤ 0.1) bodies was the solid solution of the constituent oxides with a bronze-type layered structure. The electrical conductivity of the Na(Co_1 − xZn_x)₂O₄ samples significantly increased with an increase in ZnO content. The sign of the Seebeck coefficient for all samples was positive over the whole temperature range (723-1073 K), i.e., p-type conduction. The power factor of Na(Co_0.95Zn_0.05)₂O₄ showed an outstanding power factor (1.7 × 10^− 3Wm^− 1 K^− 2) at 1073 K. The power factor was above four times superior to that of ZnO-free NaCo₂O₄ (0.4 × 10^− 3Wm^− 1 K^− 2). This originates from an unusually large Seebeck coefficient (415 μVK^− 1) accompanied with high conductivity (127Ω^− 1 cm^− 1) at 1073 K.     

Tuning the optical properties of alloyed CdSexS1 − x nanoparticles by changing the constituent stoichiometry

The spherical particles CdSe_xS_1 − x with 30-80 nm in radius have been successfully prepared by the hydrothermal reaction at 200 °C. The structure characterization which has been carried out using X-ray diffraction (XRD) shows hexagonal crystal structure. Novel properties have been observed via UV-visual absorption spectra and photoluminescence (PL) spectra. The absorption shoulder and the luminescence emission peaks have been tuned by changing the mole ratio of Se in the CdSe_xS_1 − x samples.     

The properties of transparent semiconductor Zn1 − xTixO thin films prepared by the sol-gel method

Transparent semiconductor thin films of Zn_1 − xTi_xO (0 ≦ x ≦ 0.12) were deposited on alkali-free glass substrates by the sol-gel method. The effects of Ti addition on the crystallization, microstructure, optical properties and resistivity of ZnO thin films were investigated. The as-coated films were preheated at 300 °C, and then annealed at 500 °C in air ambiance. X-ray diffraction results showed all polycrystalline Zn_1 − xTi_xO thin films with preferred orientation along the (002) plane. Ti incorporated within the ZnO thin films not only decreased surface roughness but also increased optical transmittance and electrical resistivity. In the present study, the Zn_0.88Ti_0.12O film exhibited the best properties, namely an average transmittance of 91.0% (an increase of ~ 12% over the pure ZnO film) and an RMS roughness value of 1.04 nm.     

Enhanced ferromagnetic properties of multiferroic BiCoxFe1 − xO3 synthesized by hydrothermal method

The BiCo_xFe_1 − xO₃ samples have been successfully synthesized by hydrothermal process. The resulting products were characterized by X-ray powder diffraction (XRD), energy dispersive X-ray (EDS), differential thermal analysis (DTA), and physical property measurement system (PPMS).It was found that the magnetization of the obtained products was greatly enhanced by Co substituting for Fe ions. Furthermore, the value of magnetism of BiCo_xFe_1 − xO₃ samples can be adjusted by Fe doping concentration. DTA curve indicates the ferroelectric properties of the obtained BCFO samples are not affected by Co substitution. Therefore, it would be interesting to realize thin films with similar compositions and study their properties in the interest of device applications.     

Order-disorder phase transitions and high-temperature oxide ion conductivity of Er2+xTi2−xO7−δ (x = 0, 0.096)

The Er_2+xTi_2−xO_7−δ (x = 0.096; 35.5 mol% Er₂O₃) solid solution and the stoichiometric pyrochlore-structured compound Er₂Ti₂O₇ (x = 0; 33.3 mol% Er₂O₃) are characterized by X-ray diffraction (phase analysis and Rietveld method), thermal analysis and optical spectroscopy. Both oxides were synthesized by thermal sintering of co-precipitated powders. The synthesis study was performed in the temperature range 650-1690 °C. The amorphous phase exists below 700 °C. The crystallization of the ordered pyrochlore phase (P) in the range 800-1000 °C is accompanied by oxygen release. The ordered pyrochlore phase (P) exists in the range 1000−1200 °C. Heat-treatment at T ≥ 1600 °C leads to the formation of an oxide ion-conducting phase with a distorted pyrochlore structure (P2) and an ionic conductivity of about 10⁻³ S/cm at 740 °C. Complex impedance spectra are used to separately assess the bulk and grain-boundary conductivity of the samples. At 700 °C and oxygen pressures above 10⁻¹⁰ Pa, the Er_2+xTi_2−xO_7−δ (x = 0, 0.096) samples are purely ionic conductors.     

Composition dependent thermoelectric properties of sintered Mg2Si1−xGex (x = 0 to 1) initiated from a melt-grown polycrystalline source

Fabrication of Mg₂Si_1−xGe_x (x = 0-1.0) was carried out using a spark plasma sintering technique initiated from melt-grown polycrystalline Mg₂Si_1−xGe_x powder. The thermoelectric properties were evaluated from RT to 873 K. The power factor of Mg₂Si_1−xGe_x with higher Ge content (x = 0.6-1.0) tends to decrease at higher temperatures, and the maximum value of about 2.2 × 10^− 5 Wcm^− 1K^− 2 was observed at 420 K for Mg₂Si and Mg₂Si_0.6Ge_0.4. The coexistence of Si and Ge gave rise to a decrease in the thermal conductivity in the Mg₂Si_1−xGe_x. The values close to 0.02 Wcm^− 1K^− 1 were obtained for Mg₂Si_1−xGe_x (x = 0.4-0.6) over the temperature range from 573 to 773 K, with the minimum value being about 0.018 Wcm^− 1K^− 1 at 773 K for Mg₂Si_0.4Ge_0.6. The maximum dimensionless figure of merit was estimated to be 0.67 at 750 K for samples of Mg₂Si_0.6Ge_0.4.     

Optical and electrical properties of vapour phase grown Zn1 − xCrxTe crystals

The optical and electrical properties of vapour phase grown crystals of diluted magnetic semiconductor Zn_1 − xCr_xTe were investigated for 0 ≤ x ≤ 0.005. The diffuse reflectance spectra exhibited an increase in the fundamental absorption edge (E₀) with composition x and were also dominated by a broad absorption band around 5200 cm^− 1 arising from ⁵T₂ → ⁵E transition. The ⁵T₂ and ⁵E levels originate from the crystal field splitting of the ⁵D free ion in the ground state. The electrical resistivity measurements revealed semiconducting behaviour of the samples with p-type conductivity in the temperature range of 200-450 K.     

Structure and negative thermal expansion of Pb1 −xBixTiO3

Pb_1-xBi_xTiO₃ (x = 0.0-0.1) compounds were prepared to study the unique dopant effect of bismuth in PbTiO₃. Their thermal expansions and structures were investigated by high-temperature X-ray diffraction and X-ray Rietveld method. The results indicated that Bismuth substitution evidently weakened the tetragonality of PbTiO₃ solid solution, but increased the spontaneous polarization. Both the enhanced spontaneous polarization and the decreased tetragonality led to small volume shrinkage with temperature rising, where the average volumetric thermal expansion coefficient changed from − 1.99 × 10^− 5/°C for pure PbTiO₃ to − 0.56 × 10^− 5/°C for Pb_0.90Bi_0.10TiO₃. The Curie point of Pb_1 − xBi_xTiO₃ was slightly raised compared to PbTiO₃ and permitted one to use it in a wide temperature range.     

Luminescence properties of Eu ions doped in Y2−xGdxO3 thin films grown by pulsed laser deposition method

Luminescence properties of Y_2−xGd_xO₃:Eu³⁺ (x = 0 to 2.0) thin films are investigated by site-selective laser excitation spectroscopy. The films were grown by pulsed laser deposition method on SiO₂ (100) substrates. Cubic phase Y₂O₃ and Gd₂O₃ and monoclinic phase Gd₂O₃ are identified in the excitation spectrum of the ⁷F₀ → ⁵D₀ transition of Eu³⁺. The emission spectra of the ⁵D₀ → ⁷F_J (J = 1 and 2) transition from individual Eu³⁺ centers were obtained by tuning the laser to resonance with each excitation line. The excitation line at around 580.60 nm corresponds to the line from Eu³⁺ with C₂ site symmetry of cubic phase. New lines at 578.65 and 582.02 nm for the C_S sites of Gd₂O₃ with monoclinic phase are observed by the incorporation of Gd in Y₂O₃ lattice. Energy transfer occurs between Eu³⁺ ions at the C_S sites and from Eu³⁺ ions at the C_S sites to those at the C₂ site in Y_2−xGd_xO₃.     

Structural study of Si1 − xGex nanocrystals embedded in SiO2 films

We have investigated the structural properties of Si_1 − xGe_x nanocrystals formed in an amorphous SiO₂ matrix by magnetron sputtering deposition. The influence of deposition parameters on nanocrystal size, shape, arrangement and internal structure was examined by X-ray diffraction, Raman spectroscopy, grazing incidence small angle X-ray scattering, and high resolution transmission electron microscopy. We found conditions for the formation of spherical Si_1 − xGe_x nanocrystals with average sizes between 3 and 13 nm, uniformly distributed in the matrix. In addition we have shown the influence of deposition parameters on average nanocrystal size and Ge content x.     

Composition dependence of optical constants in ferroelectric Ba(Ti1 − x,Nix)O3 thin films by optical transmittance technique

Ba(Ti_1 − x,Ni_x)O₃ ferroelectric thin films with perovskite structure are prepared on fused quartz substrates by a sol-gel process. Optical transmittance measurements indicate that Ni-doping has an obvious effect on the energy band structure of BaTiO₃. It has been found that the refractive index n, extinction coefficient k, and band gap energy E_g of the films are functions of the film composition. The E_g of Ba(Ti_1 − x,Ni_x)O₃ decreases approximately linearly as the Ni content increases, which is attributed to the decline of conduction band energy level with increasing the Ni content. On the other hand, n and k both increase linearly with increasing the Ni content because of the increase of packing density. These results indicate that thin films might have potential applications in BaTiO₃-based thin-film optical devices.     

Dye-sensitized solar cells composed of Ti1−xSnxO2 nanocrystals

Ti_1−xSn_xO₂ nanocrystals were successfully synthesized by using a simple solvothermal route, and its band energy gap broaden and flat band potential can be rationally regulated with increasing x value. Furthermore, Ti_1−xSn_xO₂ nanocrystals were first used as the photoelectrode material for dye-sensitized solar cells. A cell made of Ti_1−xSn_xO₂ (x = 0.3) exhibited the best photovoltaic performance. This is due to its most narrow band gap energies, most negative flat band potential and lowest dark current densities. After the surface of Ti_1−xSn_xO₂ (x = 0.3) electrode was treated with TiCl₄ solution, the cell sensitized by a mixed solution of N719 and D131 dye exhibited the best efficiency of 4.64% under the illumination of 1 sun (AM1.5, 100 mW cm⁻²).     

The microwave-assisted synthesis and characterization of Zn1 − xCoxO nanopowders

In this paper, we present a simple microwave-assisted synthesis of Zn_1 − xCo_xO nanopowders. With the advantages of the microwave-assisted method, we have successfully synthesized good crystalline quality and good surface morphology Zn_1 − xCo_xO nanopowders. The nanopowders are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), UV-VIS absorption, and micro-Raman spectroscopy. We found, in the synthesis process, the surfactant Triethanolamine (TEA) plays an important role on the morphology of Zn_1 − xCo_xO nanoparticles. The XRD study shows that for Co doping up to 5%, Co²⁺ ions are successfully incorporated into the ZnO host matrix. The absorption spectra of Zn_1 − xCo_xO (x = 1-5%) nanopowders show several peaks at 660, 611 and 565 nm, indicating the presence of Co²⁺ ions in the tetrahedral sites. The Raman study shows that the linewidth of E₂^low mode increases with Co concentration, which further indicates the incorporation of Co²⁺ ions into the ZnO host matrix.     

Improved thermoelectric properties by adding Al for Zn in (ZnO)mIn2O3

The grain size and density of the sintered (Zn_1 − xAl_xO)_mIn₂O₃ bodies decreased with the small Al₂O₃ content (≤ 0.012), and then increased gradually by further increasing the Al₂O₃ content. The addition of Al for Zn in the (ZnO)_mIn₂O₃ led to an increase in both the electrical conductivity and the absolute value of the Seebeck coefficient. This indicates that the power factor was significantly enhanced by adding Al for Zn. The thermoelectric power factor was maximized to 1.67 × 10^− 3 W m^− 1 K^− 2 at 1073 K for the (Zn_0.992Al_0.008O)_mIn₂O₃ sample.