MCM基板电测试技术

对于复杂的ＭＣＭ多层互连基板，电测试是控制成本、确保质量的关键环节。本文简要介绍了探针电阻、电容、电子束、潜在路缺陷电测试主其测试技术的应用。     

MCM(MCP)封装测试技术及产品

1、简介南通富士通的MCM封装测试技术是利用陶瓷基板或硅基板作为芯片间的互连,将二片以上的超大规模集成电路芯片安装在多层互连基板上,再用金丝与金属框架相连通,而后由树脂包封外壳的多芯片半导     

MCM—C多层基板技术及其发展应用

本文系统阐述了MCM－C（陶瓷厚膜型多芯片组件）的三类多层基板的基本结构与工艺技术，并对MCM－C的发展趋势及应用进行了介绍。     

MCM的组装和测试

多芯片组件（MCM）是介于IC和PWB的中间形式，由此而来，对于MCM的可制造性和可测试性问题必须在电路设计和封装设计的各个阶段中都予以重视。本文阐述了MCM基片、封装的选择及与系统可靠性有关的测试方法和程序。     

高速多功能信号处理MCM的设计与制作

以一款T/R组件中的实用控制电路为对象,研究了基于多层陶瓷电路基板的MCM结构设计.针对高速信号的MCM多层基板布线技术及多层陶瓷基板的制作技术,研制出具有高速电路性能的实用化MCM组件,其体积和重量大幅度减少,基板层数达到12层,最小线宽/线间距0.2mm,组装密度57%.     

与组装技术发展保持同步的MCM测试技术

随着电子技术的发展,人们对多芯片模块(multichip modules简称MCM)的需求正在不断地快速增长,这是因为该封装形式能够提供微型化、轻量化的子系统,从而节省系统级的成本。MCM是通过将若干个集成电路芯片装入一个封装内所获得的,该封装的尺寸大小与一个单芯片封装相同。如果采用了MCM器件的话,系统板能够做得非常小。由于MCM解决方法中焊点少于单芯片的解决方法,所以可靠性也随之增加了。     

多晶硅薄膜热膨胀系数的电测试结构

提出了一种新型多晶硅薄膜热膨胀系数的电测试结构,给出了热机电耦合模型和测试方法,并利用Coventor软件和ANSYS软件进行模拟和验证.分析表明模拟结果和理论结果基本一致,从而验证了该模型.该方法能够实现多晶硅薄膜热膨胀系数的在线提取,测量方便,独立性较高,以电学量形式输出,对于薄膜热膨胀系数的在线检测有一定参考价值.     

Electrical and structural characteristics of tin-doped GaN thin films and its hetero-junction diode made all by RF reactive sputtering

Tin (Sn) doping in gallium nitride (GaN) has been mainly reported from the theoretical view only. Based upon the availability of Sn precursor and commercialization, Sn-GaN film has not been deposited magnetron sputtering until this work. By using the cheap and safe reactive sputtering technique, here we present Sn-GaN thin films with single cermet targets at the Sn/(Sn+Ga) molar ratios of x=0, 0.03, 0.07, and 0.1 to form Sn-x-GaN films under the atmosphere of the mixture of Ar and N₂. The Sn-GaN films had the wurtzite structure. Sn can be added to GaN to form SnGaN alloy with a maximal amount of ~10%. The structural, electrical, and optical properties had changed with the Sn content until the oversaturation of Sn in Sn-0.1-GaN. The Sn doping led to the lattice expansion, worsened crystallinity, n-type GaN, increased electrical concentration, decreased the electrical mobility etc. Moreover, n-Sn-x-GaN/p-Si diodes were successfully made and their performance was evaluated in terms of the barrier height, ideality factor, and series resistance. This work has opened the door for studying the different kinds of dopants on the important III nitrides.     

低能离子束在薄膜淀积中的应用

本文介绍利用已建成的双束低能离子束薄膜淀积系统,制备Si、Ge、GaN低温外延膜,Si/CoSi_2/Si多层结构膜,以及金刚石多晶膜。     

The effect of temperature on the growth and properties of green light-emitting In0.5Ga0.5N films prepared by reactive sputtering with single cermet target

We have grown In_0.5Ga_0.5N films on SiO₂/Si (100) substrate at 100–400 °C for 90 min by rf reactive sputtering with single cermet target. The target was made by hot pressing the mixture of metallic indium, gallium and ceramic gallium nitride powder. X-ray diffraction (XRD) measurements indicated that In_0.5Ga_0.5N films had wurtzite structure and showed the preferential (1 0 -1 0) diffraction. Both SEM and AFM showed that In_0.5Ga_0.5N films were smooth and had small roughness of 0.6 nm. Optical properties were measured by photoluminescence (PL) spectra from room temperature to low temperature of 20 K. The 2.28 eV green emission was achieved at room temperature for all our InGaN films. The electrical properties of In_0.5Ga_0.5N films on a SiO₂/Si (100) substrate were measured by the Hall measurement at room temperature. InGaN films showed the electron concentration of 1.51×10²⁰–1.90×10²⁰ cm⁻³ and mobility of 5.94–10.5 cm² V⁻¹ s⁻¹. Alloying of InN and GaN was confirmed for the sputtered InGaN.     

电气设备防潮关键问题探讨

分析了潮湿对电气设备的危害,分析了潮湿环境条件下电气设备的腐蚀机理;研究了无源电气配电柜的防潮技术,探讨了防潮配电柜的优化设计方案。     

铜表面硫化膜形成及其电接触特性

用库仑分析法测定了在湿热含Ｈ２Ｏ气氛中铜表面腐蚀膜层的厚度及其随腐蚀时间的变化，对不同Ｈ２Ｓ浓度的膜层变化曲线存在的差异进行了探讨。分析了膜层厚度变化对电接触性能的影响及其异常现蟓 。     

Uniformity of Electrical Parameters on MCT Epitaxy Film

For Hall measurement under different magnetic fields at LN2 temperature, Hg1-xCdxTe (MCT) film (radius 1 cm) grown on CdTe substrate by LPE is photoengraved into many small Van Der Pauw squares, then their Hall coefficients and mobilities are measured and analyzed, respectively. Two films were Hall-tested during the temperature range from LHe 4. 2K to about 200K. An actual impression on the uniformity of electrical parameters for MCT film can obtained by means of the methods presented in this paper.     

金属粒子-介质复合薄膜中非平衡态电子瞬态弛豫的研究

利用飞秒脉冲激光和泵浦－探测技术测量了贵金属－介质复合薄膜（Ｃｕ－Ｂａ－Ｏ、Ａｕ－Ｂａ－Ｏ）的瞬态光学透过率随延迟时间的变化曲线，观察到了薄地光的吸收迅速增大并在皮秒时间内的状的现象，该现象是薄膜中超微粒子内费米能级附近电子被飞秒激光脉冲激光，产生非平衡态电子而经历瞬态弛豫造成的，本文从理论上给出了复合薄膜中Ａｕ超微粒子的电子声子相互作用常数ｇ的数值。     

Electrical resistivity of thin electroless Ag–W films for metallization

It is shown that optimization of the electroless deposition and the use of vacuum annealing yield dramatic decrease in the resistivity and its scatter in 100- and 50-nm silver–tungsten (Ag–W) films. Physical processes, which control the resistivity drop during low-temperature annealing and the residue resistivity in the annealed films are discussed.     

纳米结构Ag-TCNQ电双稳薄膜的制备及分析

采用真空蒸发和大气环境下后热处理的方法制备了纳米量级颗粒均匀的Ag-TCNQ薄膜。通过可见光范围透射谱、x射线衍射、原子力显微镜、傅里叶红外光谱以及x光电子谱等分析研究了薄膜的物理和化学性质，发现热处理可促使Ag和TCNQ发生充分的络合反应并减小薄膜的颗粒度，在此基础上利用STM实现了局城电双稳态的转变和纳米存储点的写入。