离子注入法制备超薄氚源

叙述了一种用于中微子静止质量测量的大面积高活度氚源的离子注入制备过程。氚注入在微晶玻璃基板上的碳膜中，由此获得窄条形（０．２ｍｍ宽）、大面积（４０×３０ｍｍ２）、高活度（约２０ＭＢｑ／ｃｍ２）、氚分布均匀（９５％）、氖注入厚度为２μｇ／ｃｍ２、氚的逃逸速度≤４×１０２Ｂｑ／ｈ的氚源。     

POLYMER DIODES MADE OF ION IMPLANTED POLYACETYLENE FILMS

Polyacetylene films were doped with FeCl3 and implanted with 30 k'eV K+ ions. Physical changes to the films were examined by a series of measurements, which include the four-probe test, infrared ray absorption and 2 MeV He+ particle elastic recoil dettection and Rutherford backscattering. The chemical dopants (Fe+++ and Cl-) were redistributed after the implantation and the different species (K+. Fe+++ and Cl-ions) formed p - n junctions at the implantation depths. The implanted films exhibited desirable Ⅰ-Ⅴ characteristics, with current densities as high as 600 mA/cm- at 3V and back - to - forward ratio of current over 300. The polymer diodes kept their behavior for over 60 days. Discussions on the results were given in detail.     

离子注入对GCr15和Cr4Mo4V轴承材料的显微硬度及摩擦系数的影响

文章报导了经Cr,Mo,N,B离子注入后GCr15和Cr4 Mo4V二种轴承材料的显微硬度和摩擦系数的测试结果。测试结果发现经注入后材料表面的显微硬度提高,摩擦系数降低,经Cr+Mo+B和Cr+Mo+N注入试样的摩擦系数降为末注试样的1/3以下。     

Ti／Mo的离子束混合研究

采用Xe~+(300 keV)和Ar~+(90—120 keV)离子束,在室温下轰击双层型及多层膜样品,离子注量范围为1×10~(15)-1×10~(17)cm~(-2)。用俄歇电子能谱,X射线光电子能谱及卢瑟福背散射法分析成分的深度分布,并用透射电镜观察多层膜的结构。结果表明,体系中主要发生级联混合。对多层膜有Q∝φ1/2。而双层样品,则为Dt∝φ1/2。用Xe~+混合时,多层膜中部的混合显著多于两侧,与TRIM计算的能量沉积密度分布相符。多层膜混合后形成体心立方的β-Ti-Mo亚稳固溶体。碳、氧杂质对混合有显著的抑制作用,并在混合过程中重新分布。     

RBS ANALYSIS OF DAMAGE AND ANNEALING OF ION IMPLANTED InP:Fe

Rutherford backscattering spectroscopy (RBS) with channeling technique has been used to analyze the damage and its annealing of Si+ and P+ implanted InP:Fe. 150 keV Si ions and 160 keV P ions were implanted with doses ranging from 1×1013 to 1×1015 / cm2 at room temperature, 200℃ and 77K. Thermal annealing was performed in a conventional open tube furnace under flow of pure N2 for 15 minutes. Annealing temperature was chosen from 150℃ to 800 ℃ It was found that a dose of 8×1013cm2 Si+ was sufficient to produce an amorphous layer at room temperature and its epitaxial regrowth takes place at temperature below 150 ℃. The epitaxial regrowth of amorphous layer produced by 1×1014/cm2 Si ions occurs from both substrate and surface while that produced by co-implantation of 1×1014 /cm2 Si ions with the same dose of P ions takes place from substrate only. It was also noticed that for the former sample, its amorphized layer can be nearly completely recrystallized by epitaxial growth at 650 ℃, but for the latter much residual disorder remains even after annealing at 750 ℃. As for 77K implant at dose as low as 5×1013/cm2, Si ions begin to produce an amorphous layer that can be wholly reordered at 750℃. Samples implanted at 200℃remain crystalline only with small fraction of disorder due to self-annealing effect during the implantation. The damage annealing in the implanted layer corresponds to the change of electrical parameters got from Hall measurements.     

A COMPUTER SIMULATION OF HIGH-DOSE ION IMPLANTATION INTO AMORPHOUS MATERIALS

A computer program MACA was developed for simulating high-dose ion implantation into amorphous solids. The topology of amorphous solids was modelled by adjusting the free flight path distribution between collisions, so that the radial distribution function will characterize the short - range order and long - range disorder of amorphous targets. A simulation example is given.     

离子轰击模拟中子辐照在核材料研究中的应用

简要综述了离子轰击模拟中子辐照对材料，尤其是对堆用Ｚｒ合金的结构和性能影响的相关性，方法特点和研究。讨论了离子品种，能量，辐照剂量，束流密度和温度等实验参量的选择及其对材料组织，结构，力学和耐腐蚀性能等的影响。离子轰击模拟堆内中子辐照研究核材料是１种具有成熟理论体系，高效，安全和经济的好方法。     

ION BEAM STUDY ON EPITAXIAL GROWTH FEATURES OF YBaCuO FILMS

The epitaxial growth features of YBa2Cu3O7-x (YBCO) films on (100) SrTiO3 substrates have been studied by Rutherford backscattering spectrometry and axial channeling technique. A typical minimum yield value, Xmin, of Ba yielded in channeling spectrum is 4.6 % for the film of 166 nm. Only (00L) peaks appeared in X ray diffraction patterns of the films. The results indicate that the YBCO films have good epitaxial growth quality with c- axis orientation perpendicular to the substrate surface. Simulation of RB process in films and substrates have also been performed using RUMP program, and analysis shows that compositions of the films are uniform with near (123) stoichiometry. The higher interface yields in the aligned spectrum reveal that there are extra defects in the interface layer owing to lattice mismatch and interface interaction.     

用As离子注入法生成Nb(As)超导膜实验研究

用150keV的As离子大剂量注入到铌膜上,在一定条件下制备了超导膜。其超导转变温度为6.6 K。注入层的厚度约67 nm,用迭代扣普法求得了此层中的砷浓度分布,得到了Nb与As原子浓度的比值为2.2。此样品是富铌的Nb(As)超导膜,其超导转变温度比理想的Ti_3P结构的Nb_3As(Tc=0.3 K)高6.3 K。     

PHASE ANALYSES FOR DUAL ION BEAM DEPOSITED ZrO2 FILMS ON NaCl SUBSTRATE

ZrO2 films on NaCl(100) substrate produced by oxygen ion bombardment and argon ion sputtering of Zr are analysed using TEM,XRD and XPS.The result of TEM shows that only cubic phase exists for the ZrO film produced by oxygen ion bombardment with 30μA/cm^2 and 200eV,while the XRD result shows that there seems to exhibit a smlaa quanitity of monoclinic phase apart from cubic one under the production condition of oxygen ion of 25μA/cm^2,100eV.     

低能氮离子注入固体乙酸钠的质量沉积效应

对２５ｋｅＶ氮离子束辐照固体乙酸钠引起基分子结构的变化进行了研究，通过红外光谱的测定，发现氮离子辐照乙酸钠样品后的产物中含有新的化学基团，再配合 水合茚三酮反应等化学方法，分析得知辐照后的样品中含有氰基和氨基等产物。     

MoSx FILMS DEPOSITED ON DIFFERENT MATRIXES BY ION BEAM TECHNIQUE

MoSx(x=1.79-2.34) films of 200nm thickness are deposited onto brass and C20 steel substrates by the ion beam assisted technique,respectively,Stuctures and compositions of these films,and changes in valence states of the Mo element are examined by XRD and XPS before and after wear,The lubriucation properties and wear resistances for two kinds of samples are evaluated using a pin-on-disk installation in betwwen two kinds of samples exhibit obvious differences.     

Modification of DLC films by Ni ions implantation

Enhanced diamond-like carbon (DLC) multilayer films were produced by a method of alternating the magnetic filtered vacuum cathode arc deposition and the metal vapor vacuum arc (MEVVA) implantation of Ni⁺ ions. The microstructure and mechanical properties of these multilayer films were studied by XPS, Raman, SEM, AFM, XRD, nano-intender and internal stress measurement. The results reveal that with the increasing dose of implanted Ni⁺ ions, the sp³ contents are declining and reduction of the nanohardness and release of the internal stress are observed.     

氩离子辐照对ZrO2—Y2O3薄膜的结构影响

为了研究离子辐照对薄膜结构的影响,对氩离子辐照磁控溅射沉积的ZrO_2-8%(m/m)Y_20_3薄膜,用XRD、AES及XPS进行微观分析。结果表明,溅射沉积的无定形薄膜经离子辐照后发生了晶化,膜内元素与基体元素发生了显著的混合,表面污染的碳向膜内迁移。此外,还研究磁控溅射沉积ZrO_2-8%(m/m)Y_2O_3薄膜氩离子辐照前后表面Zr(3d),Y(3d),O(1s)结合能的位移情况。     

GIC－4117／HC1．7MV Tandetron上的MeV离子注入系统

利用通用离子公司（ＧＩＣ）的４１１７型１．７ＭＶＴａｎｄｅｔｒｏｎ离子束分析设备进行ＭｅＶ级离子注入。所注入的离子能量范围由５００ｋｅＶ到１０ＭｅＶ，离子的质量在２４０ｕ以下，某些元素的负离子束流强度在１５０μＡ以上。双向机械扫描技术可将离子均匀地注入样片。     

Freeman离子源~(11)B离子比的提高

为了提高电子温度,对Freeman源电子反射屏与弧放电室的结构作了改进,使~(11)B离子比达到40%左右。     

Influence of ion irradiation on internal residual stress in DLC films

The dependence of internal residual stress in thin diamond-like carbon films grown on Si substrate by PECVD technique on most important growth parameters, namely RF-power, DC bias voltage and substrate temperature, is described. Results show that compressive stress reaches the highest value of 2.7 GPa at low RF-power and DC bias. Increase of substrate temperature from 250 to 350 °C leads to nonlinear increase of stress value. Inhomogeneity of residual stress along the film surface disappears when film is deposited at temperatures above 275 °C. Post-growth film irradiation by P⁺ and In⁺ ions cause decrease of compressive stress followed by its inversion to tensile. For all ion energy combinations used residual stress changes linearly with normalized fluence up to 0.2 DPA with slope (8.7 ± 1.3) GPa/DPA.     

氘双等离子体离子源的进展

一、引言低能加速器型中子发生器利用D-T反应能产生单色的14MeV快中子。发生器对离子束的要求既可以是原子离子(即必须分析),也可以是混合束(即不经分析)。现在中子发生器大多采用磁分析,虽然设备复杂些,但还是有其优点的。在原先调试的基础上,我们又进行了束分析的调试,源的结构也做了一些改进,使源的性能有了进一步提高。     

离子引出过程的实验与数值模拟的比较

研究了原子蒸汽激光同位素分离器中离子的引出过程，将阴极离子流随时间的变化，离子引出时间受外电场和等离子密度的影响以及离子密度分布的变化等实验结果与数值模拟结果进行了比较，两者符合得较好，从实验上验证了２－Ｄ离子引出理论模型有较好的适用性。     

STUDY OF THE FOCUSED ION BEAM AND ITS APPLICATION TO METAL IMPLANTATION MODIFICATION

The properties and designment of the strong focusing lens system and the application to metal modification of gear cutting tools are described. The focused ion beam produced by a special three asymmetric voltage lens has the unique features of short midfocal length, strong focusing and omitted focusing electric power. These properties of strong focusing lens system are due to the application of the high energy ratio of 20 to 50 onto the lens.