共查询到19条相似文献,搜索用时 62 毫秒
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垂直腔面发射激光器(VCSEL)具有生产成本低、调制速率高等优点,在光通信领域占有重要地位。随着数据需求量的飞速增长,在长距离信息传输中,具有低损耗的1 550 nm波长的VCSEL引起了研究人员的兴趣。本文首先介绍了1 550 nm VCSEL的结构,然后讨论了其带宽限制因素以及相应的改进方法,接着从NRZ(不归零)调制和PAM4(四电平脉冲幅度)调制两方面对近年来高速1 550 nm VCSEL的研究进展进行了综述,最后展望了高速1 550 nm VCSEL在未来光通信领域的发展和应用。 相似文献
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利用传输矩阵理论和TFCalc薄膜设计软件分析了分布布拉格反射镜和垂直腔面发射激光器(VCSEL)的反射率谱特性,对比了从谐振腔入射与从表面入射时反射率谱的差异,为白光反射谱表征VCSEL外延片提供了依据.利用Crosslight软件模拟了InGaAs/AlGaAs应变量子阱的增益谱随温度的变化特性及VCSEL器件内部温度分布,设计了增益-腔模调谐的VCSEL.采用金属有机物化学气相淀积设备外延生长了顶发射VCSEL,制作了氧化孔径为7.5μm的氧化限制型VCSEL器件,测试了器件的直流特性、光谱特性和眼图特性;6 mA,2.5 V偏置条件下输出光功率达5 mW,4级脉冲幅度调制传输速率达50 Gbit/s. 相似文献
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计算了InGaAs/AlGaAs量子阱的激射波长与阱垒厚度的关系,并通过Rsoft软件计算了不同温度下的材料增益特性.计算并分析了渐变层厚度对分布布拉格反射镜(distributed Bragg reflectors,DBRs)势垒尖峰及反射谱的影响,通过传输矩阵理论得到P-DBR和N-DBR的反射谱和相位谱.模拟了垂直腔面发射激光器(vertical surface emitting lasers,VCSEL)结构整体的光场分布,驻波波峰与量子阱位置符合,基于有限元分析模拟了氧化层对电流限制的影响.通过计算光子晶体垂直腔面发射激光器(photonic crystal vertical cavity surface emitting lasers,PC-VCSEL)中不同的模式分布及其品质因子Q,证明该结构可以有效地实现基横模输出.通过光刻、刻蚀、沉积、剥离等半导体工艺成功制备出氧化孔径为22μm的VCSEL和PC-VCSEL,VCSEL的阈值电流为5.2 mA,斜率效率0.67 mW/mA,在不同电流光谱测试中均是明显的多横模输出;PC-VCSEL的阈值电流为6.5 mA,基横模输出... 相似文献
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短距离光互联技术在云计算、5G通信、物联网技术等方面有重要的商业应用价值。基于高速垂直腔面发射激光器(Vertical-cavity surface-emitting laser,VCSEL)与多模光纤组成链路、采用直接调制检测、并使用如四电平脉冲幅度调制(Four-level pulse amplitude modulation,PAM4)等的高阶调制模式是现阶段短距离光互联链路方案的首选。本文首先介绍了短距离光互联应用的研究现状;第二部分介绍了VCSEL的发展、结构以及动态参数;第三部分介绍了PAM4调制方法及伴随使用的各种电子技术(均衡,前向纠错,脉冲整形);第四部分介绍了提高单链路速率的波分复用(Wavelength division multiplexing,WDM)技术;最后对以高速VCSEL、多模光纤、直接调制检测、PAM4调制以及波分复用技术的短距离光互联方案应用前景做了总结和展望。 相似文献
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短距离光互联技术在云计算、5G通信、物联网技术等方面有重要的商业应用价值。基于高速垂直腔面发射激光器(Vertical-cavity surface-emitting laser,VCSEL)与多模光纤组成链路、采用直接调制检测、并使用如四电平脉冲幅度调制(Four-level pulse amplitude modulation,PAM4)等的高阶调制模式是现阶段短距离光互联链路方案的首选。本文首先介绍了短距离光互联应用的研究现状;第二部分介绍了VCSEL的发展、结构以及动态参数;第三部分介绍了PAM4调制方法及伴随使用的各种电子技术(均衡,前向纠错,脉冲整形);第四部分介绍了提高单链路速率的波分复用(Wavelength division multiplexing,WDM)技术;最后对以高速VCSEL、多模光纤、直接调制检测、PAM4调制以及波分复用技术的短距离光互联方案应用前景做了总结和展望。 相似文献
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垂直腔面发射激光器(VCSEL)中的载流子聚集效应使注入到有源区的工作电流只是通过边缘环形区域很窄的通道,激光功率密度分布不均匀;尤其当器件尺寸较大时,激射光斑呈现环状,环中间光强很弱.这是研制电抽运高功率大尺寸VCSEL尤为突出的技术难题.采用新型结构成功研制出808 nm波段高功率大孔径VCSEL,在注入电流为1A时,室温下连续输出功率达0.3 W.
关键词:
半导体激光器
垂直腔面发射激光器
高功率
大孔径 相似文献
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A low-threshold and high-power oxide-confined 850-nm AlInGaAs strained quantum-well vertical-cavity surface-emitting laser 下载免费PDF全文
A low-threshold and high-power oxide-confined 850-nm AlInGaAs strained quantum-well (QW) vertical-cavity surface-emitting laser (VCSEL) based on an intra-cavity contacted structure is fabricated. A threshold current of 1.5 mA for a 22 μm oxide aperture device is achieved, which corresponds to a threshold current density of 0.395 kA/cm2. The peak output optical power reaches 17.5 mW at an injection current of 30 mA at room temperature under pulsed operation. While under continuous-wave (CW) operation, the maximum power attains 10.5 mW. Such a device demonstrates a high characteristic temperature of 327 K within a temperature range from -12℃ to 96℃ and good reliability under a lifetime test. There is almost no decrease of the optical power when the device operates at a current of 5 mA at room temperature under the CW injection current. 相似文献
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A multi-hole vertical-cavity surface-emitting laser (VCSEL) operating in stable single mode with a low threshold current was produced by introducing multi-leaf scallop holes on the top distributed Bragg-reflector of an oxidation-confined 850 nm VCSEL. The single-mode output power of 2.6 mW, threshold current of 0.6 mA, full width of half maximum lasing spectrum of less than 0.1 nm, side mode suppression ratio of 28.4 dB, and far-field divergence angle of about 10° are obtained. The effects of different hole depths on the optical characteristics are simulated and analysed, including far-field divergence, spectrum and lateral cavity mode. The single-mode performance of this multi-hole device is attributed to the large radiation loss from the inter-hole spacing and the scattering loss at the bottom of the holes, particularly for higher order modes. 相似文献
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基于自旋反转模型, 对双光注入下1550 nm 垂直腔表面发射半导体激光器(1550 nm-VCSEL)的非线性动力学行为进行了理论分析和数值仿真研究. 结果表明: 当一个中心波长位于1550 nm 的副VCSEL(S-VCSEL)同时受到来自两个主VCSELs (M-VCSELs)的光注入时, 在适当的注入条件下, S-VCSEL可处于双光注入锁定态. 此时, S-VCSEL中的两偏振模式均呈现频率为两注入光频率之差的周期性振荡, 输出的光谱仅包含两个主频率部分, 即光谱具有单边带特征. 因此, 基于双光注入下S-VCSEL的周期性振荡可以获得两个相互正交的光毫米波. 通过调节两个M-VCSELs之间的频率差异可使毫米波频率在较大范围内连续可调, 通过调节系统参量可以控制毫米波功率以及调制深度.
关键词:
垂直腔表面发射激光器
双光注入
毫米波
调制深度 相似文献
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We report the study on a short wavelength-tunable vertical-cavity
surface-emitting laser utilizing a monolithically integrated bridge tuning
microelectromechanical system. A deformable-bridge top mirror
suspended above an active region is utilized. Applied bridge-substrate bias
produces an electrostatic force which reduces the spacing of
air-gap and tunes the resonant wavelength toward a shorter wavelength
(blue-shift). Good laser characteristics are obtained: such as continuous tuning
ranges over 11 nm near 940 nm for 0--9 V tuning bias, the peak output power
near 1 mW and the full-width-half-maximum limited to approximately
3.2--6.8 nm. A detailed simulation of the micromechanical and optical
characteristics of these devices is performed, and the ratio of
bridge displacement to wavelength shift has been found to be 3:1. 相似文献
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Polarization switching and synchronization of mutually coupled vertical-cavity surface-emitting semiconductor lasers 下载免费PDF全文
Polarization switching (PS) dynamics and synchronization
performances of two mutually coupled vertical-cavity
surface-emitting lasers (VCSELs) are studied theoretically in
this paper. A group of dimensionless rate equations is derived
to describe our model. While analysing the PS characteristics,
we focus on the effects of coupling rate and frequency detuning
regarding different mutual injection types. The results indicate
that the x-mode injection defers the occurrence of PS, while
the y-mode injection leads the PS to occur at a lower current.
Strong enough polarization-selective injection can suppress the
PS. Moreover, if frequency detuning is considered, the effects
of polarization-selective mutual injection will be weakened. To
evaluate the synchronization performance, the correlation
coefficients and output dynamics of VCSELs with both pure mode
and mixed mode polarizations are given. It is found that
performance of complete synchronization is sensitive to the
frequency mismatch but it is little affected by mixed mode
polarizations, which is opposite to the case of
injection-locking synchronization. 相似文献