共查询到20条相似文献,搜索用时 125 毫秒
1.
我国印制电路板(PCB)的非ODS清洗技术,已基本解决。当今需面对的是:(1)新型元器件的组装、(2)无铅焊工艺、(3)小产量生产的清洗技术,以及(4)优化方案的思考。 相似文献
2.
CMP后清洗技术的研究进展 总被引:3,自引:0,他引:3
化学机械抛光(CMP)技术是目前广泛采用的几乎唯一的高精度全局平面化技术,抛光后表面的清洗质量直接关系到CMP技术水平的高低.介绍了各种机械、物理及化学清洗方法与工艺技术优缺点,指出了清洗荆、清洗方式是CMP后清洗技术中的关键要素.综述了CMP后清洗技术的发展现状,分析了CMP后清洗存在的问题,并对其发展趋势进行了展望. 相似文献
3.
4.
5.
主要论述了PCBA清洗设备的种类,着重论述了全自动水清洗设备的结构、功能(喷淋技术和清洗方式)及性能(清洁度监测、清洗温度及时间、漂洗水量及次数、喷淋压力和溶剂回流延时),并对市场上各类型的水清洗设备进行了关键指标的比较,为研究院所小批量多品种PCBA的高标准清洗选择合适的清洗机提供一个参考. 相似文献
6.
7.
8.
9.
10.
《电子工业专用设备》2005,34(7):66-67
奥地利VILLACH(维拉赫)和瑞士苏黎世,2005年6月27日讯-半导体业界中单晶圆湿式清洗技术市场领先者和首要的技术创新者SEZ(瑟思)集团宣布,诚邀Glenn Gale博士出任新创立部门一前段工艺过程(FEOL)清洗项目部副总裁职位,负责管理SEZ集团全球FEOL清洗制程工艺。在全球客户的范围内,指导公司FEOL清洗解决方案的引进和实施,集中关注围绕65nm和45nm技术标准的直接需求。 相似文献
11.
CIGS薄膜(InGa)2Se3-富Cu-富In(Ga)的演变 总被引:1,自引:0,他引:1
采用三步共蒸发工艺顺序沉积铜铟镓硒(CuInGaSe2,CIGS)薄膜.薄膜的厚度、组份、晶相结构分别由台阶仪、X射线荧光光谱仪(XRF)和X射线衍射仪(XRD)来表征.在(In,Ga)2Se3预制层-富Cu相的演变过程中,依次发生以下相变:Cu(In,Ga)5Se8、Cu(In,Ga)3Se5、Cu2(In,Ga)4Se7(或Cu(In,Ga)2Se3.5)、Cu(In,Ga)Se2(液相CuxSe).在富Cu相-富In(Ga)相的演变过程中,依次发生以下相变:Cu(In,Ga)Se2(液相CuxSe)、Cu2(In,Ga)4Se7(或Cu(In,Ga)2Se3.5)、Cu(In,Ga)3Se5、Cu(In,Ga)5Se8.对这两个演变过程中薄膜的生长机理和结构特性进行了讨论. 相似文献
12.
Maximum likelihood estimation of parameters of several continuous and discrete failure distributions
A comprehensive quantitative treatment is presented for maximum-likelihood estimation of parameters of the following continuous and discrete failure distributions: (1) Exponential, (2) Gamma, (3) Weibull, (4) Normal, (5) Lognormal, (6) Extreme value, (7) Poisson, (8) Binomial and (9) Geometric. 相似文献
13.
A series of novel aminoalkyl-substituted fluorene/carbazole-based main chain copolymers with benzothiadiazole (BTDZ) of different contents: poly[3,6-(N-(2-ethylhexyl)carbazole)-(9,9-bis(3'-(N,N-dimethyl-amino)propyl)-2,7-fluorene)-4,7-(2,1,3-benzothiadiazole)] (PCzN-BTDZ) were synthesized by Suzuki coupling reaction. Through a postpolymerization treatment on the precursor polymer, a corresponding quaternized ammonium polyelectrolyte derivatives: poly[3,6-(N-(2-ethylhexyl)carbazole)-(9,9-bis(3'-((N,N-dimethyl)-N-ethylammonium)propyl)-2,7-fluorene)-4,7-(2,l, 3-benzothiadiazole)] dibromide (PCzNBr-BTDZ) were obtained. It was found that devices from such polymers with high work-function metal cathode such as Al showed similar device performance to that by using low work-function cathode such as Ba, indicating the excellent electron injection ability of these polymers. The efficient energy transfer from fluorene-carbazole segment to the narrow band gap BTDZ site for both the neutral and the quaternized copolymers was also observed. The addition of BTDZ into the polymer main chain can also improve polymer LED (PLED) device performance. When poly(3,4-ethylenedioxythiophene) (PEDOT)/poly(vinylcarbazole) (PVK) was used as an anode buffer, the external quantum efficiency of the copolymer PCzN-BTDZ1 was 0.99%, which was much higher than the copolymer PCzN without the incorporation of BTDZ in the same device configuration. 相似文献
14.
不同物相二氧化钒间的相互转化及其相变性能研究 总被引:1,自引:0,他引:1
利用乙醇还原[VO(O2)2]-配合离子可以成功制备出VO2(B)纳米带;考察了VO2(B)在煅烧和水热条件下转化其它物相VO2的条件.结果表明,在惰性氛围中,VO2(B)在700℃的条件下煅烧2 h可以转化为VO2(M);在水热条件下,如果体系中无掺杂剂,VO2(B)可以转化成VO2(A);如果体系中存在掺杂剂(如钼酸),则VO2(B)转化为掺杂的VO2(M).在一步水热法制备VO2(M)过程中,选择掺杂剂是至关重要的,掺杂剂有利于形成掺杂VO2(M),使VO2(M)在水热条件下能够稳定存在.VO2(A)在惰性氛围中煅烧,发现VO2(A)也可以转化为VO2(M).不同物相VO2具有均一的带状形貌,初步探讨了VO2之间的转化机理.VO2(A)的相变温度为162.4℃;Mo掺杂VO2(M)的相变温度为53.7℃,说明掺杂Mo原子可以有效降低VO2(M)的相变温度,也表明Mo原子可以有效地进入VO2(M)晶格中. 相似文献
15.
非对称多模量子叠加态光场的等幂高次和压缩 总被引:1,自引:0,他引:1
根据量子力学中的态叠加原理,构造了由多模复共轭相干态|{zj(a)*}>q和多模复共轭相干态|{zj(b)*}>q的相反态|{-zj(b)*}>q的线性叠加所组成的非对称两态叠加多模量子叠加态光场|ψ(2)>q,利用多模压缩态理论研究了态|ψ1f(2)>q的等幂高次和压缩特性,结果表明: 1)当Rj(a)=Rj(b)和ψj(a)-ψj(b)=±(2k 1)π(k=0,1,2,3……),态|ψ1f(2)>q的两个正交相位分量均处于N-H最小测不准态的结果;2)当Rj(a)=Rj(b)=Rj和ψj(a)=ψj(b)=ψj,ψ态|1f(2)>q的等幂高次和压缩与文献3的结果相似; 3)当Rj(a)≠Rj(b)=Rj和ψj(a)=ψj(b)=ψj,且和满足一定条件时,无论qN为奇数还是偶数,态|ψ1f(2)>q的两个正交相位分量均可分别呈现周期性变化的等幂高次和压缩效应,但qN为奇数时的压缩深度大于qN为偶数时的压缩深度。 相似文献
16.
Two kinds of superlattices (i) with and (ii) without growth interrupt (GI) after deposition of 1.77 monolayers (ML) of InAs on GaAs (0 0 1) were grown by solid-source molecular beam epitaxy (MBE) and assessed by transmission electron microscopy (TEM) techniques, double crystal X-ray diffraction (DCXRD) and photoluminescence (PL) measurements in order to gain an understanding of the structural and compositional properties. In case (i) formation of coherent dislocation free self-organized quantum dots (SOQDs) with 2.8-3.2 nm height and 13-16 nm lateral size was observed, whereas in case (ii) no quantum dots had formed. In order to better understand the implication of growth interruption for the formation mechanism, highly localised assessment of the composition of the QD was carried out via atomic resolution Z-contrast imaging and electron energy loss spectroscopy (EELS). 相似文献
17.
制备了采用9,10-di-(2-naphthyl)anthracene(ADN)作为主体,4-(dicya-nomethylene)-2-t-butyl-6(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran(DCJTB)作为红色发光中心,2,5,8,11-tetra-tertbutylperylene(TBPe)作为辅助掺杂剂的红光有机电致发光器件。4,4′,4″-tris[2-naphthyl(phenyl)amino]triphenylamine(2TNATA)用作空穴注入材料,4,4′-bis[N-(1-naphthyl)-N-phenylamino]biphenyl(NPB),tris-(8-hydroxyquinoline)aluminum(Alq3)用于空穴和电子传输。实验结果表明,掺有DCJTB的ADN也可实现红色发光,掺入TBPe作为辅助掺杂,可以提高该红光器件的效率,但几乎不改变器件色坐标。此外,2%TBPe(质量分数)作为辅助掺杂的器件表现出最佳的流明效率和最大升温速率。 相似文献
18.
面向对注氢硅片中微结构的影响 总被引:1,自引:1,他引:0
把不同面向的注氢硅片制成横截面样品,在高分辨率透射电子显微镜下进行观察,发现衬底面向对其中的微结构有明显的影响.首先表现为衬底中主要出现平行于正表面的氢致片状缺陷,即(10 0 )衬底中,主要出现平行于正表面的{ 10 0 }片状缺陷,而(111)衬底中出现的主要是平行于正表面的{ 111}片状缺陷.其原因是注入引起垂直正表面的张应变.另外,面向的影响还表现为,(10 0 )衬底中出现的{ 113}缺陷在(111)衬底中不出现.在(111)衬底中出现的晶格紊乱团和空洞在(10 0 )衬底中不出现.从而推测,{ 111}片状缺陷的形成不发射自间隙原子,而(10 0 )片状缺陷的形成将发射自 相似文献
19.
采用固相反应法制备了ZnO1-xSx块体材料(0≤x≤0.05);通过对样品X射线衍射谱(XRD)、电导率和Seebeck系数的测量,研究了S掺杂对ZnO晶体结构及热电性能的影响。结果表明:所有试样均为六方纤锌矿结构。在573 K时,ZnO1-xSx(0相似文献
20.
Marie Buffire Nicolas Barreau Ludovic Arzel Pawel Zabierowski John Kessler 《Progress in Photovoltaics: Research and Applications》2015,23(4):462-469
Chemical bath deposited (CBD)Zn(S,O,OH) is among the alternatives to (CBD)CdS buffer layers in Cu(In,Ga)Se2(CIGSe)‐based devices. Nevertheless, the performances reached by devices buffered with (CBD)Zn(S,O,OH) vary strongly from one sample to another and from one laboratory to another, indicating that parameters of minority impact with (CBD)CdS‐buffered devices have major influence when buffered with (CBD)Zn(S,O,OH). Moreover, the literature reports, but not systematically, the requirement of substituting the standard resistive intrinsic ZnO by (Zn,Mg)O and/or soaking the devices in ultraviolet‐containing light in order to reach optimal device operation. The present study investigates the impact of the three following parameters on the optoelectronic behavior of the Cu(In,Ga)Se2/(CBD)Zn(S,O,OH)/i‐ZnO‐based solar cells: (i) CIGSe surface composition; (ii) (CBD)Zn(S,O,OH) layer thickness; and (iii) i‐ZnO layer resistivity. The first conclusion of this study is that all of these parameters are observed to influence the electrical metastabilities of the devices. The second conclusion is that the light soaking time needed to achieve optimal photovoltaic parameters is decreased by (i) using absorbers with Cu content close to stoichiometry, (ii) increasing the buffer layer thickness, and (iii) increasing the resistivity of i‐ZnO. By optimizing these trends, stable and highly efficient Zn(S,O,OH)‐buffered CIGSe solar cells have been fabricated. Copyright © 2014 John Wiley & Sons, Ltd. 相似文献