On the universal behavior of scattering from a rough surface forsmall grazing angles

It is shown that for scattering from a plane of an average rough surface, the scattering cross section of the range of small grazing angles of the scattered wave demonstrates a universal behavior. If the angle of incidence is fixed (in general, it should not be small), the diffuse component of the scattering cross section for the Dirichlet problem is proportional to &thetas;² where &thetas; is the (small) angle of elevation and for the Neumann problem it does not depend on &thetas;. For the backscattering case, these dependencies correspondingly become &thetas;⁴ and &thetas;⁰. The result is obtained from the structure of the equations that determine the scattering problem rather than the use of an approximation     

95-GHz scattering by terrain at near-grazing incidence

This study, consisting of three complimentary topics, examines the millimeter-wave backscattering behavior of terrain at incidence angles extending between 70 and 90°, corresponding to grazing angles of 20° to 0°. The first topic addresses the character of the statistical variability of the radar backscattering cross section per unit area σ_A. Based on an evaluation of an extensive data set acquired at 95 GHz, it was determined that the Rayleigh fading model (which predicts that σ_A is exponentially distributed) provides an excellent fit to the measured data for various types of terrain covers, including bare surfaces, grasses, trees, dry snow, and wet snow. The second topic relates to the angular variability and dynamic range of the backscattering coefficient σ⁰, particularly near grazing incidence. We provide a summary of data reported to date for each of several types of terrain covers. The last topic focuses on bare surfaces. A semi-empirical model for σ⁰ is presented for vertical (VV), horizontal (HH), and cross (HV) polarizations. The model parameters include the incidence angle &thetas;, the surface relative dielectric constant ϵ, and the surface roughness ks, where k=2π/λ and s is the surface root mean square (RMS) height     

Ocean imaging with two-antenna radars

Synthetic-aperture radar (SAR) measurements are affected both by the radar backscattering cross section (σ⁰) and by the radial velocity (V_r) of the surface. An analysis of the capabilities of two-antenna SARs using a method for forming radial-velocity images to provide a general framework for evaluating the performance of different possible measurements is presented. Several key results are derived. One can measure σ⁰ and V _r separately, given a properly designed SAR. The error in V_r depends on the thermal noise in the receivers, the spacing of the two antennas, the coherence time of the surface (τ_c) and the spatial resolution of the measurement. There is an optimal separation of the antennas proportional to vτ _c, where v is the speed of the aircraft. In cases where radial velocities are unimportant, two-antenna SARs can be used to image azimuth-traveling waves with wavenumbers larger than the usual azimuth cutoff. The authors show how phase errors affect the accuracy of the measurement of V_r. In this development, they also provide a simple explanation for velocity bunching, a subject that has caused much controversy     

Emission cross sections and spectroscopy of Ho3+ laserchannels in KGd(WO4)2 single crystal

The spectroscopic properties of Ho³⁺ laser channels in KGd(WO₄)₂ crystals have been investigated using optical absorption, photoluminescence, and lifetime measurements. The radiative lifetimes of Ho³⁺ have been calculated through a Judd-Ofelt (JO) formalism using 300-K optical absorption results. The JO parameters obtained were Ω₂=15.35×10^-20 cm², Ω ₄=3.79×10^-20 cm², Ω₆ =1.69×10^-20 cm². The 7-300-K lifetimes obtained in diluted (8·10¹⁸ cm^-3) KGW:0.1% Ho samples are: τ(⁵F₃)≈0.9 μs, τ( ⁵S₂)=19-3.6 μs, and τ(⁵F₅ )≈1.1 μs. For Ho concentrations below 1.5×10²⁰ cm^-3, multiphonon emission is the main source of non radiative losses, and the temperature independent multiphonon probability in KGW is found to follow the energy gap law τ_ph ^-1(0)=βexp(-αΔE), where β=1.4×10^-7 s^-1, and α=1.4×10³ cm. Above this holmium concentration, energy transfer between Ho impurities also contributes to the losses. The spectral distributions of the Ho³⁺ emission cross section σ_EM for several laser channels are calculated in σ- and π-polarized configurations. The peak a σ_EM values achieved for transitions to the ⁵I₈ level are ≈2×10^-20 cm² in the σ-polarized configuration, and three main lasing peaks at 2.02, 2.05, and 2.07 μm are envisaged inside the ⁵I₇→⁵I₈ channel     

Petrophysics of magnetic dipole fields in an anisotropic earth

Measurement-while-drilling (MWD) resistivity log data are often acquired in highly deviated or horizontal holes. The loop sensors are located on the drill collar and are approximated as magnetic dipoles. The conductivity of the earth in the vertical direction σ_v and horizontal direction σ_h are almost always different. When an MWD resistivity tool enters a new bed, the response is compared with the precomputed logs to aid in the determination of the location of the drill bit. The MWD tool response, however, is sensitive to resistivity anisotropy. An alternative method is used to derive analytical expressions for the Sommerfeld-type integrals. Numerical results give typical MWD tool response as a function of the inclination angle &thetas; the tool makes with respect to the axes of anisotropy and also as a function of the anisotropy index κ=(σ_h/σ_v)^1/2     

A numerical procedure for recovering scattering coefficients frommeasurements with wide-beam antennas

A numerical procedure for estimating true scattering coefficients, σ⁰, from measurements made using wide-beam antennas is discussed. The use of wide-beam antennas results in an inaccurate estimate of σ⁰. To reduce this error, the authors propose a correction procedure that estimates the error resulting from the use of narrow-beam approximation and utilizes the error to obtain a more accurate estimate of σ⁰. An exponential model is assumed to take into account the variation of σ⁰ with incidence angles, and the model parameters are estimated from measured data. Based on the model and knowledge of the antenna pattern, the procedure calculates the error due to the narrow-beam approximation. The procedure is shown to provide a significant improvement in the estimation of σ⁰ obtained in wide-beam antennas. The proposed procedure is also shown to be insensitive to the assumed σ⁰ model     

The physics and fabrication of in situ back-gated (311)A hole gas heterojunctions

This paper reports the fabrication of an in situ back-gated hole gas on the (311)A surface of GaAs. The hole density can be varied from fully depleted to p_s = 2.1 × 10¹¹ cm⁻² with mobilities of up to μ = 1.1 × 10⁶ cm²V⁻¹ s⁻¹. It is seen that for carrier densities down to p_s = 4 × 10¹⁰ cm⁻² the mobility in the [ ] direction is greater than that in the [ ] direction. Using a combination of front- and back-gates we are able to keep the carrier density constant and deform the hole gas wavefunction such that the holes are pushed up against or moved further away from the heterointerface. Thus we are able to separately investigate the various scattering mechanisms that determine the mobility, and compare the experimental data with theoretical calculations based on the shape of the wavefunction.     

Theoretical and experimental investigation of rhodamine B-dopedpolymer optical fiber amplifiers

High-power (620 W) and high-gain (28 dB) amplification was achieved by a rhodamine B (RB)-doped GI polymer-optical fiber amplifier (POFA) with a l-m length. A theoretical analysis of the amplification in the RE-doped GI POFA was carried out using the rate equation for the fast three level system. The calculated gain behaviour reasonably fit the experimental data. The possibility of higher power (more than 620 W) and higher gain (more than 28 dB) amplification covering a wide range in the visible region is shown from the calculation. Absorption and emission cross sections of RE in poly(methyl methacrylate) bulk were determined and used in the calculation. The values of the cross sections (σ_{a max}=3.4·10^-20m² ,σ_{e max}=3.4·10^-20 m ²) were approximately 10,000 times larger than those of Er ³⁺ in GeO₂-SiO₂ glass     

Theoretical study of deep-trap-assisted anomalous currents inworst-bit cells of dynamic random-access memories (DRAM's)

High-level leakage (anomalous) currents in worst-bit cells of dynamic random-access memory (DRAM) devices, i.e., in the tail region of the cumulative probability of the data retention time distribution, are analyzed by utilizing device simulation. Deep-traps are assumed to be located near the metallurgical junction, and the anomalous current is evaluated as a function of the number of traps as well as a function of energy level (E_t) and capture cross-section (σ). Calculated leakage currents are compared with measured data. It is found that: (1) acceptor-type deep-traps located in an n-region, as well as donor-type deep-traps in a p-region, can generate the high-level current flowing through pn junctions; (2) heavy-metal contamination of the order of 10³ atoms/cell can generate the high-level current when E _t is situated near the center in the energy gap and σ is around 10^-15 cm²; and (3) current induced by point defects is two to six orders of magnitude lower than that induced by the heavy-metal contamination. Several sets of material constants are examined for obtaining the best fit between the calculated current and measured data. This examination theoretically predicts Zn and Au atoms (of the order of 10³ per unit cell) as the origins of the anomalous current in worst-bit cells     

Relationship between empirical and theoretical mobility models insilicon inversion layers

The theoretical and empirical expressions most commonly used for modeling the variation of the low field surface mobility of MOSFETs are discussed. It is shown that both approaches may be reconciled, and a new physical definition of the parameters of the empirical model is presented, In particular, we propose an analytical formula of the factor &thetas;₂ characterizing the quadratic dependence of the reciprocal mobility on the inversion charge. Both the formula and experiment agree and show that &thetas;₂ does not only depend on the surface roughness scattering term, but also on phonon scattering     

Maximum likelihood DOA estimation and asymptotic Cramer-Rao boundsfor additive unknown colored noise

This paper is devoted to the maximum likelihood estimation of multiple sources in the presence of unknown noise. With the spatial noise covariance modeled as a function of certain unknown parameters, e.g., an autoregressive (AR) model, a direct and systematic way is developed to find the exact maximum likelihood (ML) estimates of all parameters associated with the direction finding problem, including the direction-of-arrival (DOA) angles Θ, the noise parameters α, the signal covariance Φ_s, and the noise power σ². We show that the estimates of the linear part of the parameter set Φ_s and σ² can be separated from the nonlinear parts Θ and α. Thus, the estimates of Φ_s and σ² become explicit functions of Θ and α. This results in a significant reduction in the dimensionality of the nonlinear optimization problem. Asymptotic analysis is performed on the estimates of Θ and α, and compact formulas are obtained for the Cramer-Rao bounds (CRB's). Finally, a Newton-type algorithm is designed to solve the nonlinear optimization problem, and simulations show that the asymptotic CRB agrees well with the results from Monte Carlo trials, even for small numbers of snapshots     

New-user identification in a CDMA system

We present three detector/estimators (DEs) which allow multiuser detection and parameter estimation without a side channel in a dynamic asynchronous code-division multiple-access (CDMA) system in which users are entering and leaving the system. These DEs optimally detect a new user given only the chip rate and the spreading factor of the new user. Two of these DEs, the maximum-likelihood detector/estimator (MLDE) and the generalized maximum-likelihood detector/estimator (GMLDE), produce maximum-likelihood estimates of the new user's signature sequence, delay, and amplitude, which are then incorporated into a multiuser detector. The third DE, the cyclic detector/estimator (CDE), is the most computationally efficient of the three processors. This DE detects the new user by testing for cyclostationarity and then uses suboptimal schemes to estimate the new user's signature sequence, delay, and amplitude. Simulations indicate that all three DEs reliably detect a new user for an E_s/σ² (symbol-energy-to-noise ratio) of 5 dB. The MLDE and GMLDE produce signature sequence and delay estimates with probability of error less than 0.07 for an E_s/σ² of 10 dB, and the CDE produces signature sequence and delay estimates with probability of error less than 0.13 for an E_s/σ² of 15 dB     

The growth of high mobility heterostructures on (311)B GaAs

We demonstrate that the (311)B surface of GaAs can be used for the fabrication of high mobility (μ 2.4 × 10⁶ cm² V⁻¹ s⁻¹) two-dimensional electron gases, in which the mobility is found to be anisotropic with μ_{[ 33]} > μ_{[01 ]}. This paper reviews the magneto-transport properties of the (311)B system and sheds light on the nature of the scattering mechanisms determining the electron mobility. These results are of particular relevance to the current discussion of the nature of the {311} surface.

It is well known that a similar mobility anisotropy exists in hole gases grown on the (311)A surface, although attempts to interpret such results are complicated by the anisotropic and non-parabolic nature of the valence band structure. For electron gases grown on the (311)B surface we demonstrate experimentally (with ballistic focusing) that the Fermi surface is isotropic, leading to the conclusion that the most likely cause of the mobility anisotropy is anisotropic interface roughness scattering. This is also confirmed by measurements of mobility as a function of carrier density, which can be fitted by a simple interface roughness scattering theory.

Further experiments have demonstrated that ballistic quantization can be observed in both [ 33] and [01 ] directions, despite the large differences in anisotropic mobility.     

Analysis of competing mechanisms in transitions between excitedstates in Er-doped integrated waveguides

A new procedure for determining the prevalence of either excited-state absorption (ESA) or nonradiative cooperative energy transfer between erbium ions in transitions between excited states in Er-doped integrated waveguides is presented. These transitions are currently very attractive for the development of upconversion lasers. The procedure is based on the analysis of the dependence on the transition-originating mechanisms of the modulation transfer from the pump to the excited levels' population. The accuracy and validity range of the method are studied numerically using ordinary integrated structures. By using this procedure, the ratio of the contributions of the two competing mechanisms to the ⁴I_13/2 ⇒ ⁴I_9/2 transition is determined from fluorescence measurements on a Er,Ti:LiNbO₃ sample excited by a 1480-nm pump. Moreover, new values of the excited-state pump-absorption cross section from level ⁴I_13/2, σ₂₄ (≈1480 nm) = 0.8 × 10^-26 m², and of the parameter associated with nonradiative cooperative energy transfer between Er³⁺ ions, C₂₂ = 3 × 10^-24 m³ s·^-1, are reported     

Seasat over-land scatterometer data. I. Global overview of theKu-band backscatterer coefficients

Statistics on the backscatter coefficient σ⁰ from the Ku-band Seasat-A Satellite Scatterometer (SASS) collected over the world's land surfaces are presented. This spaceborne scatterometer provided data on σ⁰ between latitude 80° S and 80° N at incidence angles up to 70°. The global statistics of vertical (V) and horizontal (H) polarization backscatter coefficients for 10° bands in latitude are presented for incidence angles between 20° and 70° and compared with the Skylab and ground spectrometer results. Global images of the time-averaged V polarization σ⁰ at a 45° incidence angle and its dependence on the incidence angle are presented and compared to a generalized map of the terrain type. Global images of the differences between the V an H polarization backscatter coefficients are presented and discussed. The most inhomogeneous region, which contains the deserts of North Africa and the Arabian Peninsula, is studied in greater detail and compared with the terrain type     

Carrier-dependent nonlinearities and modulation in an InGaAs SQWwaveguide

The authors report measurements of optically induced carrier-dependent refractive index changes and their saturation in an InGaAs single quantum well centered within a linear multiple quantum well guided-wave Fabry-Perot resonator using diode laser sources. A low-excitation nonlinear refractive cross-section, σ_n=-1×10^-19 cm³, was deduced for probe wavelengths near the TM (transverse magnetic) absorption edge, falling only to σ_n=-3.1×10^-20 cm³, at over 0.16 μm from the band edge. For an incident irradiance of 18 kW/cm ², refractive index changes in the InGaAs quantum well as large as -0.16 were deduced near the absorption edge, while the index change at a wavelength 0.16 μm from the absorption edge was -0.055. This large off-resonant index change is attributed to an enhanced free-carrier contribution within a 2D system     

On the universality of inversion layer mobility in Si MOSFET's:Part I-effects of substrate impurity concentration

This paper reports the studies of the inversion layer mobility in n- and p-channel Si MOSFET's with a wide range of substrate impurity concentrations (10¹⁵ to 10¹⁸ cm^-3). The validity and limitations of the universal relationship between the inversion layer mobility and the effective normal field (E_eff) are examined. It is found that the universality of both the electron and hole mobilities does hold up to 10¹⁸ cm ^-3. The E_eff dependences of the universal curves are observed to differ between electrons and holes, particularly at lower temperatures. This result means a different influence of surface roughness scattering on the electron and hole transports. On substrates with higher impurity concentrations, the electron and hole mobilities significantly deviate from the universal curves at lower surface carrier concentrations because of Coulomb scattering by the substrate impurity. Also, the deviation caused by the charged centers at the Si/SiO₂ interface is observed in the mobility of MOSFET's degraded by Fowler-Nordheim electron injection     

Carrier transport related analysis of high-power AlGaN/GaN HEMTstructures

Shubnikov-de Haas (SdH) oscillation and Hall measurement results were compared with HEMT DC and RF characteristics for two different MOCVD grown AlGaN-GaN HEMT structures on semiinsulating 4H-SiC substrates. A HEMT with a 40-nm, highly doped AlGaN cap layer exhibited an electron mobility of 1500 cm²/V/s and a sheet concentration of 9×10¹² cm at 300 K (7900 cm²/V/s and 8×10¹² cm^-2 at 80 K), but showed a high threshold voltage and high DC output conductance. A 27-nm AlGaN cap with a thinner, lightly doped donor layer yielded similar Hall values, but lower threshold voltage and output conductance and demonstrated a high CW power density of 6.9 W/mm at 10 GHz. The 2DEG of this improved structure had a sheet concentration of n_SdH=7.8×10¹² cm^-2 and a high quantum scattering lifetime of τ_q=1.5×10^-13 s at 4.2 K compared to n_SdH=8.24×10¹² cm^-2 and τ_q=1.72×10^-13 s for the thick AlGaN cap layer structure, Despite the excellent characteristics of the films, the SdH oscillations still indicate a slight parallel conduction and a weak localization of electrons. These results indicate that good channel quality and high sheet carrier density are not the only HEMT attributes required for good transistor performance     

New CO2 laser lines in the 11-μm wavelength region:new hot bands

Nineteen new laser lines in the 11-μm wavelength region have been observed in CW oscillation from a CO₂ laser with a high-Q, high-resolution cavity at a higher than usual current density. The frequency of each line has been measured using heterodyne frequency measurement techniques. Analysis of the frequencies shows that 15 lines are rotation-vibration transitions of the 01¹2-[11¹1,03¹1]_I band (the first sequence hot band) of the CO₂ molecule and four lines belong to the rotation-vibration transitions of the 02²1-[12 ²0, 04²0]_I band of CO₂     

Second harmonic generation and sum frequency mixing of dualwavelength Nd:YAlO3 laser in flux grown KTiOPO4crystal

On the basis of accurately measured refractive indexes, the authors have obtained the Sellmeier's equations for flux grown KTiOPO ₄ (KTP) crystal and used them to calculate the phase matched angles (&thetas;_m, φ_m) and effective nonlinear coefficients (d_eff) for type I and III second harmonic generation (SHG) and sum frequency mixing (SFM) of radiations at 1.0795 and 1.3414 μm. The optimum phase matching conditions for 1.0795 and 1.3414 μm SHG are that &thetas;_m=86.88 and 58.88°, respectively, in an XZ plane (φ=0) and for SMF of 1.0795 and 1.3414 μm in the same plane 76.02°. The corresponding d_eff values calculated from &thetas; _ms are 18.07×10^-9 and 17.42×10^-9 esu