Structural, electronic and optical properties of Sn1−xSbxO2

The goal of this paper is to undertake a detailed first principle calculation of the structural, electronic and optical properties of Sn_1−xSb_xO₂. The results show that the stability of Sn_1−xSb_xO₂ in the full range of Sb content points to the probability of a continuous solid solution, where the increasing Sb content leads to volume expansion with different variation trends in the lattice constants. The increase of Sb concentration in the semiconductor–metal–semimetal transition occurs in consonance with the corresponding changes in its structural, electronic and optical properties. Two competing mechanisms play essential roles in this transition, namely; the many body effect and the atom disorder. Our calculations concur with previous X-ray diffraction, sheet resistance, resistivity and optical parameters detections. The studies present a practical way of tailoring the physical behaviors of Sn_1−xSb_xO₂ through the alloying technique.     

Sn0.94Sc0.06P2O7的合成及其中温电性能研究

采用固相法合成了Sn0.94Sc0.06P2O7。XRD测试结果表明Sn0.94Sc0.06P2O7表现为单一立方SnP2O7相结构。采用电化学工作站对样品的中温电性能(50~250℃)进行了研究。结果表明,样品在湿润H2气氛中200℃下,电导率达到最大值(2.8×10-2 S·cm-1)。以样品为固体电解质组装氢-空气燃料电池,性能测试表明,在150℃时,其最大输出功率密度为25.02mW·cm-2(厚度:1.7mm),表明Sn0.94Sc0.06P2O7是一种潜在的中温燃料电池的电解质材料。     

Salt-assistant combustion synthesis of nanocrystalline Nd2(Zr1 − xSnx)2O7 (0 ≤ x ≤ 1) solid solutions

Nanocrystalline Nd₂(Zr_{1 − x}Sn_x)₂O₇ series solid solutions were prepared by a convenient salt-assisted combustion process using glycine as fuel. The samples were characterized by X-ray diffraction, Fourier transform infrared spectroscopy, Raman spectroscopy, transmission electron microscopy and high-resolution transmission electron microscopy. The results showed the Zr ion can be partially replaced by Sn ion. The partial substituted products were still single-phase solid solutions and the crystal form remained unchanged. TEM images reveal that the products are composed of well-dispersed square-shaped nanocrystals. The method provides a convenient and low-cost route for the synthesis of nanostructures of oxide materials.     

Selective synthesis of Bi2Se3 nanostructures by solvothermal reaction

Bi₂Se₃ nanobelts, nanoflakes and sheets embedded nanotubes were prepared via solvothermal process with different solvents. The reaction conditions influencing the synthesis of Bi₂Se₃ nanostructures such as solvents, and reaction temperatures were studied and optimized. Results indicated that the mixed solvent composed of triethanolamine and ethanol (TEA-EtOH) or triethanolamine and distilled water (TEA-H₂O) can decrease the threshold temperature (TT) of Bi₂Se₃. With the solvents TEA-EtOH and TEA-H₂O, we originally accomplished the shape-controlled synthesis of Bi₂Se₃ nanocrystals by controlling reaction temperature. Based on the viewpoint of crystallography about Bi₂Se₃, the possible growth mechanisms of Bi₂Se₃ nanostructures were discussed.     

Scintillation and optical properties of Pb-doped YCa4O(BO3)3 crystals

This communication reports optical properties and radiation responses of Pb²⁺ 0.5 and 1.0 mol%-doped YCa₄O(BO₃)₃ (YCOB) single crystals grown by the micro-pulling-down (μ-PD) method for neutron scintillator applications. The crystals had no impurity phases according to the results of X-ray powder diffraction. These Pb²⁺-doped crystals demonstrated blue-light luminescence at 330 nm because of Pb²⁺¹S₀-³P_0,1 transition in the photoluminescence spectra. The main emission decay component was determined to be about 250-260 ns under 260 nm excitation wavelength. When irradiated by a ²⁵²Cf source, the relative light yield of 0.5% Pb²⁺-doped crystal was about 300 ph/n that was determined using the light yield of a reference Li-glass scintillator.     

Magnetic properties of β-FeSi2 single crystals

We investigated temperature and magnetic field dependences of the magnetization of β-FeSi₂ single crystals in the temperature range of 5-300 K in magnetic fields up to 15 kOe. The temperature dependence of the magnetic susceptibility of the Cr- and Ni-doped sample can be explained by temperature-dependent contributions due to paramagnetic centres and due to the carriers excited thermally in the extrinsic conductivity region. The values of the paramagnetic Curie temperature as well as activation energy of the donor and acceptor levels are estimated.     

Low-field magnetic properties of high-TcGdxY1?xBa2Cu3Oy superconductor

The magnetization of Gd_0.85Y_0.15Ba₂Cu₃O _y high-T _c superconductor was measured at low fields (<100 Oe) and at a constant temperature of 77 K. The magnetization curves deviate from linearity at 25 Oe, causing the destruction of the weak couplings of the superconducting grains. The hysteresis due to granular superconductivity was also observed.     

Superconductivity and Ferromagnetism of the Ru-1232 Compounds in the (Ru1?xNbx)Sr2(GdCe1.8Sr0.2)Cu2Oz System

The Ru-1232 compounds have been synthesized in the (Ru_1–xNb _x )Sr₂(GdCe_1.8Sr_0.2)Cu₂O _z system, and effects of Nb substitution for Ru on superconductivity and ferromagnetism of the Ru-1232 compounds have been investigated. First, X-ray powder diffraction study shows that nearly the single 1232 phase samples can be obtained in the x composition range from 0.0 to 0.3. Then, from the electrical resistivity study, it is found that each of the samples shows resistivity dropping phenomenon at two temperatures of T _c ^l and T _c ^h, which originates from superconductivity of the Ru-1232 phase and the Ru-1222 one, respectively. Both of the starting temperatures are lowering with increasing Nb content x. Lastly, from the magnetic susceptibility study, it is found that superconducting transition temperature T _c is 20 K for the Ru-1232 sample with x = 0.0 and the ferromagnetic transition temperature T _m is about 90 K. This study also shows that both of the values of T _c and T _m become low with increasing x from 0.0 to 0.3.     

Instantaneous preparation of CuIn(S1 − x, Sex)2 films by means of sparks using microwave irradiation

CuIn(S_1 − x,Se_x)₂ (CISSe) films aimed at flexible solar cells were directly prepared on Ti foils from elemental In, Cu, S, and Se particle precursor using microwave irradiation. The formation of the CISSe phase was deduced from X-ray diffraction (XRD) patterns. The (112) peaks of CISSe were well defined and the lattice constants increased in direct proportion to the S/(S + Se) ratio almost satisfying Vegard's law. In particular, CuInSe₂ was formed in the desired chalcopyrite lattice as indicated by the presence of (101), (103) and (211) peaks in the XRD pattern. Porous surfaces and formation of by-products were avoided by employing an evaporated In and Cu films instead of In and Cu particles.     

Photoluminescence spectra of MnIn2S4

MnIn₂S₄ single crystals grown by the directional crystallization method were investigated by using the temperature and excitation power dependencies of photoluminescence (PL) spectra. PL spectra consist of one broad band resulting from donor-acceptor pair recombination. The analysis of the temperature quenching of the PL intensity yields one defect donor level with a thermal ionization energy of about 0.17 eV. The broad band of PL spectra indicates that radiative recombination is related to multiphonon optical processes. The energy of the involved phonon was found to be around 0.025 eV and the energy of the acceptor level is about 0.86 eV.     

Preparation and photoelectrochemical performance of TiO2/HS-CH2-COOH/Cu3Se2 composite film

In this paper, the TiO₂/HS-CH₂-COOH/Cu₃Se₂ composite film photoanodes were fabricated on conducting glass plates. Cu₃Se₂ nanoparticles were used as the sensitizer and the bi-functional modifier HS-CH₂-COOH was used at the interface between Cu₃Se₂ and TiO₂ films to improve the properties of the film photoanode. The characterization results show that the sol-gel prepared anatase TiO₂ film has a compact and uniform surface, while the tetragonal Cu₃Se₂ film has a coarse surface which is made up of uniform elongated particles. The photoelectrochemical experimental results indicate that the TiO₂/HS-CH₂-COOH/Cu₃Se₂ composite film photoanodes have a good photovoltaic property.     

Study on structural phase transitions and relaxation processes of Cs2Co(SO4)2·6H2O and Cs2Zn(SO4)2·6H2O crystals

The structural phase transitions and relaxation processes of Cs₂Co(SO₄)₂·6H₂O and Cs₂Zn(SO₄)₂·6H₂O single crystals were investigated, with the phase transitions of both crystals being determined from NMR data. The spin–lattice relaxation time, T₁, of the ¹³³Cs nucleus in two crystals undergoes a significant change near the phase transition temperature, T_C, and these changes coincide with the changes in the splitting of the ¹³³Cs resonance lines. The variations in the temperature dependence for the splitting of the ¹³³Cs resonance lines and T₁ near T_C are related to changes in the symmetry of surrounding Cs⁺. In addition, the ¹³³Cs T₁ of Cs₂Co(SO₄)₂·6H₂O, which contains paramagnetic ions, was found to be shorter than that of Cs₂Zn(SO₄)₂·6H₂O. This relaxation time is inversely proportional to the square of the magnetic moment of the paramagnetic ions. The differences between the ¹³³Cs T₁ of these compounds are probably due to the differences between the electronic structures of their metal ions.     

Zero resistance at 117 K in Bi1.6Pb0.4Sr2Ca2Cu2+xOy compounds

In the Pb-doped Bi-Sr-Ca-Cu-O system, optimization of the composition and heat treatment conditions at which a greater amount of the high-T _c phase forms has been reported in our early paper [1], where the temperature of zero resistance was 107K. Recently, we have achieved zero resistance at 117 K and observed an a.c. susceptibility step at around 150 K by changing the Cu composition in the Bi^1.6Pb^0.4Sr²Ca²Cu^2+x O ^y system (x=0, 0.4, 0.8, 1.2, and 1.6).     

Luminescence properties of Eu ions in K2YF5 crystals

Luminescence properties of Eu³⁺ ions (0.1, 1.0 and 6.0 mol%) in K₂YF₅ crystals are investigated by the site-selective laser-excitation spectroscopy. The excitation spectrum of the ⁵D₀ emission exhibits two strong ⁷F₀ → ⁵D₀ excitation lines together with four weaker lines. Six different emission spectra are obtained under the excitation at each excitation line indicating that there existed at least six different sites for Eu³⁺. The relative intensity of the excitation lines is dependent on the Eu³⁺ concentrations. The ⁵D₀ emissions of Eu³⁺ show two types of decay behavior with lifetimes of 0.5 and 5.0 ms at 15 K. It is suggested that the fast and slow decays correspond to isolated and paired Eu³⁺ ions in K₂YF₅. The results are discussed in relation with one dimensional chain structure of the K₂YF₅ lattice.     

Photoluminescence properties of ion beam synthesized β-FeSi2

Effects of structural changes near the interface, the implantation dose and the precipitate morphology on photoluminescence (PL) properties of ion-beam synthesized (IBS) β-FeSi₂ have been investigated. The intrinsic PL spectrum attributed to the interband transition of β-FeSi₂ was found by examining the dependence of the PL peak energy on temperature and the excitation power.     

Synthesis and characterization of nanocrystalline manganese pyrophosphate Mn2P2O7

Mn₂P₂O₇ polyhedral particles were synthesized by simple and cost-effective method using manganese nitrate hydrate and phosphoric acid in the presence of nitric acid with further calcinations at the temperature of 800 °C. The crystallite size obtained from X-ray line broadening is 31 ± 13 nm for the Mn₂P₂O₇. The X-ray diffraction and SEM results indicated that the synthesized nanoparticles have only the structure without the presence of any other phase impurities. The FT-IR and FT-Raman spectra show characteristic bands of the P₂O₇⁴⁻ anion. The UV–Vis–NIR spectrum confirms the octahedral coordination of Mn²⁺ ion.     

水热合成Sb_2Se_3纳米线及其对Bi_2Te_3纳米粉末热电性能的影响

以SbCl3和Se粉为原料,水合肼(N2H4·H2O)为还原剂,采用水热法在150℃下,分别保温不同的时间合成Sb2Se3纳米粉末.通过X射线衍射(XRD)、场发射电子扫描电镜(FESEM)、透射电镜(TEM)以及高分辨透射电镜(HRTEM)等分析方法对产物的物相成分和微观形貌等进行了表征,实验结果表明保温时间达到24h时,获得产物为单相Sb2Se3纳米线晶体.根据实验结果还研究了水热合成Sb2Se3纳米线晶体可能的反应及生长机理,结果表明一维纳米线沿[001]方向生长,纳米线的形成与其独特的层状晶体结构有关.最后采用放电等离子体快速热压烧结法将水热合成的Bi2Te3纳米粉末与不同含量Sb2Se3纳米线进行复合,分析了Sb2Se3纳米线对Bi2Te3纳米材料热电性能的影响,发现复合约1at%Sb2Se3纳米线可以使Bi2Te3纳米材料热电性能有一定提高.     

Enhanced thermoelectric properties of NaCo2O4 by adding ZnO

The primary phase present in the as-sintered Na(Co_1 − xZn_x)₂O₄ (0 ≤ x ≤ 0.1) bodies was the solid solution of the constituent oxides with a bronze-type layered structure. The electrical conductivity of the Na(Co_1 − xZn_x)₂O₄ samples significantly increased with an increase in ZnO content. The sign of the Seebeck coefficient for all samples was positive over the whole temperature range (723-1073 K), i.e., p-type conduction. The power factor of Na(Co_0.95Zn_0.05)₂O₄ showed an outstanding power factor (1.7 × 10^− 3Wm^− 1 K^− 2) at 1073 K. The power factor was above four times superior to that of ZnO-free NaCo₂O₄ (0.4 × 10^− 3Wm^− 1 K^− 2). This originates from an unusually large Seebeck coefficient (415 μVK^− 1) accompanied with high conductivity (127Ω^− 1 cm^− 1) at 1073 K.     

Influence of sodium compounds at the Cu(In,Ga)Se2/(PVD)In2S3 interface on solar cell properties

The present contribution deals with indium sulfide buffer layers grown by thermal co-evaporation of elemental indium and sulfur. It has been found necessary to deposit these buffer layers at low substrate temperatures in order to reach V_oc values similar to those with (CBD)CdS. However, such deposition conditions lead to the formation of a highly recombinative Cu(In,Ga)Se₂/indium sulfide interface. This behaviour may be associated to the presence of sodium carbonates/oxides at the interface even though the Cu(In,Ga)Se₂ surface was cleaned in NH₃ (1 M, room temperature) prior to the indium sulfide deposition. An explanation is that, despite the chemical etch, sodium carbonates/oxides remain in the air exposed Cu(In,Ga)Se₂ grain boundaries and can migrate towards the surface when the Cu(In,Ga)Se₂ is heated under vacuum. These polluted interface areas act as recombination zones and thus inferior devices. A possibility to improve the device performance (i.e. improve the interface quality) is to sulfurize the remaining sodium carbonates/oxides. The resulting Na₂S can then leave the interface by formation of a solid solution with the indium sulfide. By adapting the buffer layer deposition process, 13.3% efficiency devices with co-evaporated indium sulfide are realized, performance which is close to that reached with (CBD)CdS.