Enhancement of magnetic and dielectric properties of low temperature sintered NiCuZn ferrite by Bi2O3-CuO additives

With a series of 1.0 wt%Bi$_{2}$O$_{3}$-$x$ wt% CuO ($x =0.0$, 0.2, 0.4, 0.6, and 0.8) serving as sintering additives, Ni$_{0.23}$Cu$_{0.32}$Zn$_{0.45}$Fe$_{2}$O$_{4}$ ferrites are successfully synthesized at a low temperature (900 $^\circ$C) by using the solid state reaction method. The effects of the additives on the phase formation, magnetic and dielectric properties as well as the structural and gyromagnetic properties are investigated. The x-ray diffraction (XRD) results indicate that the added Bi$_{2}$O$_{3}$-CuO can lower the synthesis temperature significantly without the appearing of the second phase. The scanning electron microscope (SEM) images confirm that Bi$_{2}$O$_{3}$ is an important factor that determines the sintering behaviors, while CuO affects the grain size and densification. With CuO content $x=0.4$ or 0.6, the sample shows high saturation magnetization, low coercivity, high real part of magnetic permeability, dielectric permittivity, and small ferromagnetic resonance linewidth ($\Delta H$). The NiCuZn ferrites are a promising new generation of high-performance microwave devices, such as phase shifters and isolators.     

The magnetic and dielectric properties of multiferroic Sr- substituted Zn2-Y hexagonal ferrites

The magnetic and dielectric properties of Sr-substituted Zn2-Y hexagonal ferrites （Ba2-x SrxZn2Fe12O22, 1.0 〈 x ≤ 1.5） are studied in this paper. Sr substitution will lead to the variation of cation occupation, which influences both the magnetic and electric properties. As Sr content x rises from 1.0 to 1.5, magnetic hysteresis loop gets wider gradually and the permeability drops rapidly due to the transformation from ferrimagnetic to antiferromagnetic phase. Moreover, permittivity rises with increasing Sr content. Under a certain external magnetic field, the phase transition of helical spin structure of Ba0.5Srl.5Zn2Fe12O22 at about 295 K seems to open a possibility for the room-temperature ferroelectricity induced by magnetic field. But its low resistivity prevents the observation of ferroelectric and magnetoelectric properties at room-temperature.     

Spectroscopic investigation of a new crystal： Nd^3＋,Yb^3＋：YVO4

The absorption and emission spectra of the YVO4 single crystal co-doped with 1 at.% Nd^3＋ and 1 at.% Yb^3＋ are investigated. The efficient Nd^3＋ → Yb^3＋ energy transfer and the back transfer （Yb^3＋ → Nd^3＋） are observed at room temperature. The fluorescence lifetime of the 4F3/2 level of Nd^3＋ in Nd,Yb：YVO4 is measured under 808 nm laser light excitation. The efficiency of Nd^3＋ → Yb^3＋ energy transfer in YVO4 is determined to be about 34%.     

Luminescent characteristics of Tm3+/Tb3+/Eu3+ tri-doped Na5Y9F32 single crystals for white emission with high thermal stability

By using an improved Bridgman method, 0.3 mol% Tm$^{3+}/0.6$ mol% Tb$^{3+}/y$ mol% Eu$^{3+}$ ($y = 0$, 0.4, 0.6, 0.8) doped Na$_{5}$Y$_{9}$F$_{32}$ single crystals were prepared. The x-ray diffraction, excitation spectra, emission spectra and fluorescence decay curves were used to explore the crystal structure and optical performance of the obtained samples. When excited by 362 nm light, the cool white emission was realized by Na$_{5}$Y$_{9}$F$_{32}$ single crystal triply-doped with 0.3 mol% Tm$^{3+}/0.6$ mol% Tb$^{3+}/0.8$ mol% Eu$^{3+}$, in which the Commission Internationale de l'Eclairage (CIE) chromaticity coordinate was (0.2995, 0.3298) and the correlated color temperature (CCT) was 6586 K. The integrated normalized emission intensity of the tri-doped single crystal at 448 K could keep 62% of that at 298 K. The internal quantum yield (QY) was calculated to be $\sim 15.16$% by integrating spheres. These results suggested that the single crystals tri-doped with Tm$^{3+}$, Tb$^{3+}$ and Eu$^{3+}$ ions have a promising potential application for white light-emitting diodes (w-LEDs).     

Effect of lithium-potassium mixed alkali on spectroscopic properties of Er^3＋-doped aluminophosphate glasses

Er^3＋-doped lithium-potassium mixed alkali aluminophosphate glasses belonging to the oxide system xK2O-（15-x）Li2O-4B2O3-11Al2O3-5BaO-65P2O5 are obtained in a semi-continuous melting quenching process. Spectroscopic properties of Er^3＋-doped glass matrix have been analysed by fitting the experimental data with the standard Judd-Ofelt theory. It is observed that Judd-Ofelt intensity parameters Ωt（t = 2, 4 and 6） of Er^3＋ change when the second alkali is introduced into glass matrix. The variation of line strength Sed[^4I13/2,^4I15/2] follows the same trend as that of the/26 parameter. The effect of mixed alkali on the spectroscopic properties of the aluminophosphate glasses, such as absorption cross-section, stimulated emission cross-section, spontaneous emission probability, branching ratio and the radiative lifetime, has also been investigated in this paper.     

Effect of Y3+ substitution on the structural,dielectric, and electrical properties of nanosized ZnAl 2 O 4 spinel

In the present work, we have studied the structural, dielectric, and electrical properties of a series of nanosized $\mathrm{ZnAl}_{2-2x}\mathrm{Y}_{2x}\mathrm{O}_{4}$ ( $x = 0.00$ , 0.01, 0.02, 0.03, 0.04, 0.05, 0.07, and 0.10) system prepared by chemical coprecipitation method. Powder X-ray diffraction (XRD) was carried out to study the influence of $\mathrm{Y}^{3+}$ substitution on the crystal structure of these samples. High Resolution Transmission Electron Microscopy (HRTEM) images reveal the nanocrystalline nature of the samples. The Fourier Transform Infrared (FTIR) spectra confirmed the preference of $\mathrm{Y}^{3+}$ ions at the octahedral B site. The variation of dielectric constant and loss tangent (1 kHz to 1 MHz) at room temperature for all the samples show the normal behavior of spinel compounds. AC conductivity study reveals that the conduction is due to small polaron hopping. The electrical modulus analysis shows that nanocrystalline $\mathrm{ZnAl}_{2-2x}\mathrm{Y}_{2x}\mathrm{O}_{4}$ system exhibits non-Debye-type relaxation. The DC electrical resistivity measured in the temperature range 303–373 K was found to increase with temperature and yttrium content.     

Configurational entropy-induced phase transition in spinel LiMn2O4

The spinel-type LiMn$_{2}$O$_{4}$ is a promising candidate as cathode material for rechargeable Li-ion batteries due to its good thermal stability and safety. Experimentally, it is observed that in this compound there occur the structural phase transitions from cubic ($Fd\bar{3}m)$ to tetragonal ($I4_{1}/{amd}$) phase at slightly below room temperature. To understand the phase transition mechanism, we compare the Gibbs free energy between cubic phase and tetragonal phase by including the configurational entropy. Our results show that the configurational entropy contributes substantially to the stability of the cubic phase at room temperature due to the disordered Mn$^{3+}$/Mn$^{4+}$ distribution as well as the orientation of the Jahn-Teller elongation of the Mn$^{3+}$O$_{6}$ octahedron in the the spinel phase. Meanwhile, the phase transition temperature is predicted to be 267.8 K, which is comparable to the experimentally observed temperature. These results serve as a good complement to the experimental study, and are beneficial to the improving of the electrochemical performance of LiMn$_{2}$O$_{4}$ cathode.     

Lowest- Q2 measurement of the γp → Δ reaction: Probing the pionic contribution

To determine nonspherical angular-momentum amplitudes in hadrons at long ranges (low Q²), data were taken for the p(ˉe, e'p)π⁰ reaction in the Δ region at Q ² = 0.060 (GeV/c)² utilizing the magnetic spectrometers of the A1 Collaboration at MAMI. The results for the dominant transition magnetic dipole amplitude and the quadrupole to dipole ratios at W = 1232 MeV are , Re( )%, and Re( )%. These disagree with predictions of constituent quark models but are in reasonable agreement with lattice calculations with nonlinear (chiral) pion mass extrapolations, with chiral effective field theory, and with dynamical models with pion cloud effects. These results confirm the dominance, and general Q² variation, of the pionic contribution at large distances.     

Local structure of Fe-doped In 2 O 3 films investigated by X-ray absorption fine structure spectroscopy

$(\mathrm{In}_{1-x}\mathrm{Fe}_{x})_{2}\mathrm{O}_{3}$ $(x=0.07, 0.09, 0.16, 0.22, 0.31)$ films were deposited on Si (100) substrates by RF-magnetron sputtering technique. The influence of Fe doping on the local structure of films was investigated by X-ray absorption spectroscopy (XAS) at Fe K-edge and L-edge. For the $(\mathrm{In}_{1-x}\mathrm{Fe}_{x})_{2}\mathrm{O}_{3}$ films with $x=0.07, 0.09 \mbox{ and } 0.16$ , Fe ions dissolve into $\mathrm{In}_{2}\mathrm{O}_{3}$ and substitute for $\mathrm{In}^{3+}$ sites with a mixed-valence state ( $\mathrm{Fe}^{2+}/\mathrm{Fe}^{3+}$ ) of Fe ions. However, a secondary phase of Fe metal clusters is formed in the $(\mathrm{In}_{1-x}\mathrm{Fe}_{x})_{2}\mathrm{O}_{3}$ films with $x=0.22 \mbox{ and } 0.31$ . The qualitative analyses of Fe-K edge extended X-ray absorption fine structure (EXAFS) reveal that the Fe–O bond length shortens and the corresponding Debye–Waller factor ( $\sigma^{2}$ ) increases with the increase of Fe concentration, indicating the relaxation of oxygen environment of Fe ions upon substitution. The anomalously large structural disorder and very short Fe–O distance are also observed in the films with high Fe concentration. Linear combination fittings at Fe L-edge further confirm the coexistence of $\mathrm{Fe}^{2+}$ and $\mathrm{Fe}^{3+}$ with a ratio of ${\sim}3:2$ ( $\mathrm{Fe}^{2+}: \mathrm{Fe}^{3+}$ ) for the $(\mathrm{In}_{1-x}\mathrm{Fe}_{x})_{2}\mathrm{O}_{3}$ film with $x=0.16$ . However, a significant fraction ( ${\sim}40~\mbox{at\%}$ ) of the Fe metal clusters is found in the $(\mathrm{In}_{1-x}\mathrm{Fe}_{x})_{2}\mathrm{O}_{3}$ film with $x=0.31$ .     

Transition energy and dipole oscillator strength for 1s22p-1s2nd of Cr2l+ ion

The transition energies, wavelengths and dipole oscillator strengths of 1s^22p-1s^2nd （3 ≤ n ≤ 9） for Cr^21＋ ion are calculated. The fine structure splittings of 1s^2nd （n ≤ 9） states for this ion are also calculated. In calculating energy, we have estimated the higher-order relativistic contribution under a hydrogenic approximation. The quantum defect of Rydberg series 1s^2nd is determined according to the quantum defect theory. The results obtained in this paper excellently agree with the experimental data available in the literature. Combining the quantum defect theory with the discrete oscillator strengths, the discrete oscillator strengths for the transitions from initial state 1s^22p to highly excited 1s^2nd states （n ≥ 10） and the oscillator strength density corresponding to the bound-free transitions are obtained.     

A comparison of silicon oxide and nitride as host matrices on the photoluminescence from Er+ ions

This paper compares the properties of silicon oxide and nitride as host matrices for Er ions.Erbium-doped silicon nitride films were deposited by a plasma-enhanced chemical-vapour deposition system.After deposition,the films were implanted with Er3+ at different doses.Er-doped thermal grown silicon oxide films were prepared at the same time as references.Photoluminescence features of Er3+ were inspected systematically.It is found that silicon nitride films are suitable for high concentration doping and the thermal quenching effect is not severe.However,a very high annealing temperature up to 1200° C is needed to optically activate Er3+,which may be the main obstacle to impede the application of Er-doped silicon nitride.     

Negative refraction in ferromagnetic materials under external magnetic field: a theoretical analysis

We present a detailed theoretical analysis on the possibilities and conditions for negative permeability and negative refraction occuring in the magnetic materials with both pronounced magnetic and dielectric responses to electromagnetic waves. The results indicate that the permeability is always positive for $\de=(2q+0.5)\pi$ ($\de$ is the initial phase difference of magnetic components $h_{x}$ and $h_{y }$ of incident electromagnetic wave, $q$ is integer), which means that it is difficult to realize negative refraction. However, for $\de=2q\pi, \de=(2q+1)\pi$, or $\de=(2q-0.5)\pi$, the negative permeability occurs at some range of free procession frequency, which means that the refraction can become negative under certain conditions. Further analysis reveals that for general positive permittivity there are various opportunities for realizing the negative refraction provided that some requirements are met. One concludes also that the refractive index for $\de=2q\pi$ case is similar to $\de=(2q+1)\pi$. The only difference between two cases of $\de=2q\pi$ and $\de=(2q+1)\pi$ is that the $x$-direction for $\de=2q\pi$ corresponds to the $y$-direction for $\de=(2q+1)\pi$, and the $y$-direction for $\de=2q\pi$ corresponds to the $x$-direction for $\de=(2q+1)\pi$. The results are valuable for designing and analysing the complex negative refraction of magnetic materials.     

Temperature-frequency dependence and mechanism of dielectric properties for γ-Y2Si2O7

This paper reports that single-phase γ-Y2Si2O7 is prepared via a sufficient blending and cold-pressed sintering technique from Y2O3 powder and SiO2 nanopowder. It studies the dielectric properties of γ-Y2Si2O7 as a function of the temperature and frequency. The γ-Y2Si2O7 exhibits low dielectric loss and non-Debye relaxation behaviour from 25 to 1400℃ in the range of 7.3-18 GHz. The mechanism for polarization relaxation of the as-prepared γ-Y2Si2O7 differing from that of SiO 2 is explained. Such particular dielectric properties could potentially make specific attraction for extensive practical applications.     

Electromagnetic wave absorption properties of Ba(CoTi)xFe12-2xO19@BiFeO3 in hundreds of megahertz band

The high-performance electromagnetic (EM) wave absorption material Ba(CoTi)$_{x}$Fe$_{12-2x}$O$_{19}$@BiFeO$_{3}$ was prepared by solid-state reaction, and its EM wave absorption properties were deeply studied. The results revealed that Ba(CoTi)$_{x}$Fe$_{12-2x}$O$_{19}$@BiFeO$_{3}$ could obtain excellent absorption properties in hundreds of megahertz by adjusting the Co$^{2+}$-Ti$^{4+}$ content. The best comprehensive property was obtained for $x=1.2$, where the optimal reflection loss ($RL$) value reaches $-30.42$ dB at about 600 MHz with thickness of 3.5 mm, and the corresponding effective absorption band covers the frequency range of 437 MHz-1 GHz. Moreover, the EM wave absorption mechanism was studied based on the simulation methods. The simulated results showed that the excellent EM wave absorption properties of Ba(CoTi)$_{x}$Fe$_{12-2x}$O$_{19}$@BiFeO$_{3}$ mainly originated from the internal loss caused by natural resonance, and the interface cancelation further improved the absorption properties and resulted in $RL$ peaks.     

The splitting of low-lying states for hydroxyl molecule under spin--orbit coupling

The splitting of potential energy curves for the states $X^{2}\Pi _{3/2}$, $^{2}\Pi _{1/2}$ and $A^{2}\Sigma ^{ +}$ of hydroxyl OH under spin--orbit coupling (SOC) has been calculated by using the SO multi-configuration quasi-degenerate perturbation theory (SO-MCQDPT). Their Murrell--Sorbie (M--S) potential functions have been derived, then, the spectroscopic constants for $X^{2}\Pi _{3/2}$,$^{ 2}\Pi _{1/2}$ and $A^{2}\Sigma ^{ + }$ have been derived from the M--S function. The calculated dissociation energies for the three states are $D_{0}$[OH($X^{2}\Pi _{3/2})$]=34966.632cm$^{-1}$, $D_{0}$[OH($^{2}\Pi _{1/2})$]=34922.802cm$^{-1}$, and $D_{0}$[OH($A^{2}\Sigma ^{ + })$]=17469.794cm$^{-1}$, respectively. The vertical excitation energy $\nu [ {{ }^2\Pi _{1/2} ( {\nu = 0} ) \to {X}{ }^2\Pi _{3/2} ( {\nu = 0} )} ] = 139.6{\rm cm}^{-{\rm 1}}$. All the spectroscopic data for the $X^{2}\Pi _{3/2}$ and $^{2}\Pi _{1/2 }$ are given for the first time except the dissociation energy of $X^{2}\Pi _{3/2}$.     

Incommensurate-commensurate magnetic phase transition in double tungstate Li2Co(WO4)2

Magnetic susceptibility, specific heat, and neutron powder diffraction measurements have been performed on polycrystalline Li$_{2}$Co(WO$_{4}$)$_{2}$ samples. Under zero magnetic field, two successive magnetic transitions at $T_{\rm N1}\sim 9.4$ K and $T_{\rm N2}\sim 7.4$ K are observed. The magnetic ordering temperatures gradually decrease as the magnetic field increases. Neutron diffraction reveals that Li$_{2}$Co(WO$_{4}$)$_{2}$ enters an incommensurate magnetic state with a temperature dependent $\bm k$ between $T_{\rm N1}$ and $T_{\rm N2}$. The magnetic propagation vector locks-in to a commensurate value $\bm k = (1/2, 1/4, 1/4)$ below $T_{\rm N2}$. The antiferromagnetic structure is refined at 1.7 K with Co$^{2+}$ magnetic moment 2.8(1) $\mu_{\rm B}$, consistent with our first-principles calculations.     

Cluster-assisted generation of multicharged ions in nanosecond laser ionization of carbon bisulfide clusters at 1064nm

The photoionization of seeded carbon bisulfide molecular beam by a 1064\,nm nanosecond Nd-YAG laser with intensities varying from $0.8\times10^{11}$ to $5.6\times10^{11}$\,W/cm$^{2}$ have been studied by time-of-flight mass spectrometry. Multiply charged ions of S$^{q + }$ ($q$ = 2--6) and C$^{q +}$ ($q$ = 2--4) with kinetic energy of hundreds of electron volts have been observed, and there are strong experimental evidences indicating that those multicharged ions originate from the ionization of CS$_{2}$ neat clusters in the beam. An electron recolliding ionization model is proposed to explain the appearance of those multiply charged atomic ions under such low laser intensities.     

Influence of temperature on the electric,dielectric and AC conductivity properties of nano-crystalline zinc substituted cobalt ferrite synthesized by solution combustion technique

Cobalt–zinc nanoferrites with formulae Co $_{1-x}$ Zn $_{x}$ Fe $_{2}$ O $_{4}$ , where x = 0.0, 0.1, 0.2 and 0.3, have been synthesized by solution combustion technique. The variation of DC resistivity with temperature shows the semiconducting behavior of all nanoferrites. The dielectric properties such as dielectric constant ( $\varepsilon $ ’) and dielectric loss tangent (tan $\delta )$ are investigated as a function of temperature and frequency. Dielectric constant and loss tangent are found to be increasing with an increase in temperature while with an increase in frequency both, $\varepsilon $ ’ and tan $\delta $ , are found to be decreasing. The dielectric properties have been explained on the basis of space charge polarization according to Maxwell–Wagner’s two-layer model and the hopping of charge between Fe $^{2+}$ and Fe $^{3+}$ . Further, a very high value of dielectric constant and a low value of tan $\delta $ are the prime achievements of the present work. The AC electrical conductivity ( $\sigma _\mathrm{AC})$ is studied as a function of temperature as well as frequency and $\sigma _\mathrm{AC}$ is observed to be increasing with the increase in temperature and frequency.     

Effects of preparation parameters on growth and properties of β-Ga2O3 film

The Ga$_{2}$O$_{3}$ films are deposited on the Si and quartz substrates by magnetron sputtering, and annealing. The effects of preparation parameters (such as argon-oxygen flow ratio, sputtering power, sputtering time and annealing temperature) on the growth and properties ($e.g.$, surface morphology, crystal structure, optical and electrical properties of the films) are studied by x-ray diffractometer (XRD), scanning electron microscope (SEM), and ultraviolet-visible spectrophotometer (UV-Vis). The results show that the thickness, crystallization quality and surface roughness of the $\beta $-Ga$_{2}$O$_{3}$ film are influenced by those parameters. All $\beta $-Ga$_{2}$O$_{3 }$films show good optical properties. Moreover, the value of bandgap increases with the enlarge of the percentage of oxygen increasing, and decreases with the increase of sputtering power and annealing temperature, indicating that the bandgap is related to the quality of the film and affected by the number of oxygen vacancy defects. The $I$-$V$ curves show that the Ohmic behavior between metal and $\beta $-Ga$_{2}$O$_{3}$ films is obtained at 900 ${^\circ}$C. Those results will be helpful for the further research of $\beta $-Ga$_{2}$O$_{3}$ photoelectric semiconductor.     

High density Al2O3/TaN-based metal--insulator-- metal capacitors in application to radio frequency integrated circuits

Metal-insulator-metal （MIM） capacitors with atomic-layer-deposited Al2O3 dielectric and reactively sputtered TaN electrodes in application to radio frequency integrated circuits have been characterized electrically. The capacitors exhibit a high density of about 6.05 fF/μm^2, a small leakage current of 4.8 × 10^-8 A/cm^2 at 3 V, a high breakdown electric field of 8.61 MV/cm as well as acceptable voltage coefficients of capacitance （VCCs） of 795 ppm/V2 and 268ppm/V at 1 MHz. The observed properties should be attributed to high-quality Al2O3 film and chemically stable TaN electrodes. Further, a logarithmically linear relationship between quadratic VCC and frequency is observed due to the change of relaxation time with carrier mobility in the dielectric. The conduction mechanism in the high field ranges is dominated by the Poole-Frenkel emission, and the leakage current in the low field ranges is likely to be associated with trap-assisted tunnelling. Meanwhile, the Al2O3 dielectric presents charge trapping under low voltage stresses, and defect generation under high voltage stresses, and it has a hard-breakdown performance.