Performance Analysis of Germanium-Silicon Vertical Tunnel Field-Effect Transistors (Ge-Si-VTFETs) for Analog/RF Applications

Silicon - The performance analysis of Ge-Si-VTFETs for analog/RF applications has been studied in this article under various gate dielectric materials. In the proposed device, Ge/Si materials were...     

A Review of Tunnel Field-Effect Transistors for Improved ON-State Behaviour

Silicon - Tunnel Field-effect transistor (TFET) is regarded as the most promising candidate which can possibly replace the traditional MOSFET from current IC technology. It has gained much...     

Novel Linearly Graded Nanotube Field-Effect Transistors for Improved Analog Performance and Reduced Leakage Current

Silicon - In present work, a Linearly Graded (LG) work function is studied by considering the binary metal alloy AσB1−σ composition for the gate electrode. A high-k gate stack LG...     

High-Temperature Stable Operation of Nanoribbon Field-Effect Transistors

We experimentally demonstrated that nanoribbon field-effect transistors can be used for stable high-temperature applications. The on-current level of the nanoribbon FETs decreases at elevated temperatures due to the degradation of the electron mobility. We propose two methods of compensating for the variation of the current level with the temperature in the range of 25–150°C, involving the application of a suitable (1) positive or (2) negative substrate bias. These two methods were compared by two-dimensional numerical simulations. Although both approaches show constant on-state current saturation characteristics over the proposed temperature range, the latter shows an improvement in the off-state control of up to five orders of magnitude (−5.2 × 10⁻⁶).     

Design and Analog/RF Performance Analysis of a Novel Symmetric Raised-Channel SiGe Heterojunction Tunnel Field-Effect Transistor (TFET)

Silicon - In this paper, a novel symmetric double-gate TFET with elevated mid-channel is proposed with Si1-xGex heterojunction as the source and its performance has been extensively analyzed....     

Investigation of Noise Characteristics in Gate-Source Overlap Tunnel Field-Effect Transistor

Silicon - The analog circuit performance of tunnel field-effect-transistor (TFET) can be improved by implementing the concept of gate-source overlap. This paper investigates the impact of variation...     

Effect of Temperature on Performance of 5-nm Node Silicon Nanosheet Transistors for Analog Applications

Silicon - This work investigates the effects of temperature on the performance of a 5-nm node N-channel Nanosheet Transistor (NST) for analog applications. A fully calibrated commercial TCAD...     

Effects of Energy Relaxation via Quantum Coupling Among Three-Dimensional Motion on the Tunneling Current of Graphene Field-Effect Transistors

We report theoretical study of the effects of energy relaxation on the tunneling current through the oxide layer of a two-dimensional graphene field-effect transistor. In the channel, when three-dimensional electron thermal motion is considered in the Schrödinger equation, the gate leakage current at a given oxide field largely increases with the channel electric field, electron mobility, and energy relaxation time of electrons. Such an increase can be especially significant when the channel electric field is larger than 1 kV/cm. Numerical calculations show that the relative increment of the tunneling current through the gate oxide will decrease with increasing the thickness of oxide layer when the oxide is a few nanometers thick. This highlights that energy relaxation effect needs to be considered in modeling graphene transistors.     

多种药剂防治水稻稻纵卷叶螟药效对比研究

对15%甲维·茚虫威SC等6种药剂防治水稻稻纵卷叶螟的效果进行了对比研究。结果表明:6种药剂对水稻稻纵卷叶螟都有较为理想的防治效果,其中15%甲维·茚虫威SC、25%甲维·茚虫威SC、20%甲维·茚虫威SC、30%茚虫威WG等4种药剂药后14 d的保叶效果在85%以上,杀虫效果在90%以上。在今后水稻稻纵卷叶螟的防治工作中可以考虑推广使用。     

涂料应用中的流变技术

涂料的流变参数影响到涂料的贮存稳定性和涂膜的外观性能。重点介绍了振荡模式在测定涂料和涂膜的流变参数,如储能模量G′、损耗模量G″和损耗角正切tanδ等方面的应用。     

Selection of Low Dimensional Material Alternatives to Silicon for Next Generation Tunnel Field Effect Transistors

Silicon - This paper presents a method-based investigation on the application of low dimensional materials like graphene, carbon nanotube (CNT), transition metal dichalcogenides (TMDCs) in tunnel...     

Rapid Detection of Biomolecules in a Junction Less Tunnel Field-Effect Transistor (JL-TFET) Biosensor

Silicon - In this paper, we present a double gate JL-TFET based biosensor by varying the gate dielectric constant to detect various biomolecules through label-free detection technique. An...     

Investigation of Charge-plasma Based Dopingless Tunnel FET for Analog/RF and Linear Applications

Silicon - Tunnel FET (TFET) based upon charged-plasma (CP) concept have came out as a potential Metal-Oxide-Semiconductor-Field-Effect-Transistor (MOSFET) replacement as it provides immunization...     

Comparative Analysis of Boron Powders Obtained by Various Methods. I. Microstructure and Oxidation Parameters during Heating

This paper describes a study of boron powders and powder compounds, obtained by various methods, including metallothermal, electrolytic, and borane cracking methods. The crystal state, particle size and microstructure, presence and composition of impurities, and chemical composition of the oxide layer of boron particles are profoundly investigated. The effects of the above-mentioned characteristics on the particle oxidation parameters during heating with a constant rate are analyzed. The determining influence of chemical composition of the particle surface layer on the initial temperature of their intense oxidation is established. It is shown that the maximum increase in the mass and heat release value during oxidation of the boron powders is almost independent of microstructural features, crystal state, and chemical composition of and oxide layer thickness of the particles, and cannot serve as indicators of completeness of boron oxidation during heating.     

Stability of Mullite Protective Coatings for Silicon-Based Ceramics

Silicon-based ceramics are prone to severe oxidation and volatilization problems in the presence of water vapor. To address these issues, mullite has been investigated in recent years as a possible protective coating material. To analyze the stability of such coatings, a multi-species diffusion model for ionic species is developed. Onsager reciprocity is assumed for the mobility coefficients and the resulting moving boundary problem is solved numerically. The formulation also accounts for substantial Si volatilization away from the outer surface of the coating. This model is used to analyze an initial transient leading to the formation of an internal silica layer, a second transient period that follows this silica formation, and a steady-state regime that can only be attained if Si diffusion is sufficiently fast.     

Comparative Analysis of Dielectric Engineered Tunnel FET for Biosensing Applications

Silicon - Among several types of innovative bio-sensing technologies, label free dielectric modulated field-effect transistor (DM-FET) based biosensors, stand out because of their appealing...     

A Comprehensive Investigation of Vertically Stacked Silicon Nanosheet Field Effect Transistors: an Analog/RF Perspective

Silicon - In this article, the analog/RF performance of n-channel vertically stacked gate all around (GAA) silicon nanosheet field effect transistors (Si-NSFETs) are investigated using 3-D TCAD...     

软岩大变形隧道最优支护参数选择

目前国内外软岩隧道施工出现了大量变形问题,软岩隧道变形过大将无法实施二次支护,因此软岩隧道施工初期支护参数的设置至关重要.本研究构建了基于统一强度理论的应变软化模型,并结合松动圈理论计算得到锚杆最优支护参数的计算方法.依托软岩隧道A的实际施工,使用数值模拟和现场监测两种方式,验证最优支护参数计算方法的有效性.结果表明:...