The origin of spin current in YIG/nonmagnetic metal multilayers at ferromagnetic resonance

Spin pumping in yttrium-iron-garnet(YIG)/nonmagnetic-metal(NM) layer systems under ferromagnetic resonance(FMR) conditions is a popular method of generating spin current in the NM layer.A good understanding of the spin current source is essential in extracting spin Hall angle of the NM and in potential spintronics applications.It is widely believed that spin current is pumped from precessing YIG magnetization into NM layer.Here,by combining microwave absorption and DC-voltage measurements on thin YIG/Pt and YIG/NM_1/NM_2(NM_1 =Cu or Al,NM_2 =Pt or Ta),we unambiguously showed that spin current in NM,instead of from the precessing YIG magnetization,came from the magnetized NM surface(in contact with thin YIG),either due to the magnetic proximity effect(MPE) or from the inevitable diffused Fe ions from YIG to NM.This conclusion is reached through analyzing the FMR microwave absorption peaks with the DC-voltage peak from the inverse spin Hall effect(ISHE).The voltage signal is attributed to the magnetized NM surface,hardly observed in the conventional FMR experiments,and was greatly amplified when the electrical detection circuit was switched on.     

NiFe/Pt薄膜中角度相关的逆自旋霍尔效应

NiFe/Pt双层薄膜样品在铁磁共振时, NiFe磁矩进动所产生的自旋流注入到Pt层中, 由于逆自旋霍尔效应产生直流电压V_ISHE, 此电压会叠加到NiFe薄膜由于自旋整流效应而产生的电压V_SRE 上, 实验测量所得电压为V_ISHE和V_SRE的叠加. 为了区分这两种不同机理对电压的贡献, 本文采取旋转外加静磁场的方法, 通过分析所测电压随磁场角度的变化从而分离出V_ISHE 的大小. 研究结果表明, 相比于单层NiFe(20 nm)薄膜样品, NiFe(20 nm)/Pt(10 nm)双层膜样品中由于NiFe自旋注入到Pt 中导致铁磁共振线宽增加. 与逆自旋霍尔效应产生的电压相比, 自旋整流效应的贡献较小, 但不可忽略. 本文工作有助于认清铁磁/非磁性金属材料中的自旋相关效应, 并提供了一种准确的分析逆自旋霍尔效应的方法.     

Temperature dependence electron spin resonance spectra of a magnetic fluid

ESR spectra of a laboratory synthesized kerosene base magnetic fluid containing ultrafine magnetic particles (average diameter of 100A) of Zn_0.1 Fe_0.9Fe₂O₄ are recorded at different temperatures. A narrow signal was observed above the melting point of the carrier liquid (200 K) which can be attributed to a very small volume fraction of superparamagnetic particles in the system. The peak-to-peak line width for both low and high field cooled configurations show an increase with decreasing temperature. This observed behaviour has been explained by considering various energy terms which contribute to the line width.     

Temperature dependence of the P-hit single event transient pulse width in a three-transistor inverter chain

A comparison of the temperature dependence of the P-hit single event transient (SET) in a two-transistor (2T) inverter with that in a three-transistor (3T) inverter is carried out based on a three-dimensional numerical simulation.Due to the significantly distinct mechanisms of the single event change collection in the 2T and the 3T inverters,the temperature plays different roles in the SET production and propagation.The SET pulse will be significantly broadened in the 2T inverter chain while will be compressed in the 3T inverter chain as temperature increases.The investigation provides a new insight into the SET mitigation under the extreme environment,where both the high temperature and the single event effects should be considered.The 3T inverter layout structure (or similar layout structures) will be a better solution for spaceborne integrated circuit design for extreme environments.     

Temperature dependence of the P-hit single event transient pulse width in a three-transistor inverter chain

A comparison of the temperature dependence of the P-hit single event transient (SET) in a two-transistor (2T) inverter with that in a three-transistor (3T) inverter is carried out based on a three-dimensional numerical simulation. Due to the significantly distinct mechanisms of the single event change collection in the 2T and the 3T inverters, the temperature plays different roles in the SET production and propagation. The SET pulse will be significantly broadened in the 2T inverter chain while will be compressed in the 3T inverter chain as temperature increases. The investigation provides a new insight into the SET mitigation under the extreme environment, where both the high temperature and the single event effects should be considered. The 3T inverter layout structure (or similar layout structures) will be a better solution for spaceborne integrated circuit design for extreme environments.     

选择性埋氧层上硅器件的单粒子瞬态响应的温度相关性

本文建立了90 nm工艺下的绝缘体上硅浮体器件和选择性埋氧层上硅器件模型,通过器件电路混合仿真探究了工作温度对上述两种结构的多级反相器链单粒子瞬态脉冲宽度以及器件内部电荷收集过程的影响.研究表明, N型选择性埋氧层上硅器件相较于浮体器件具有更好的抗单粒子能力,但P型选择性埋氧层上硅器件的抗单粒子能力在高线性能量转移值下与浮体器件基本相同.同时电荷收集的温度相关性分析表明,N型选择性埋氧层上硅器件只存在漂移扩散过程,当温度升高时其电荷收集量变化很小,而N型浮体器件存在双极放大过程,电荷收集量随着温度的升高而显著增加;另外, P型选择性埋氧层上硅器件和浮体器件均存在双极放大过程,当温度升高时P型选择性埋氧层上硅器件衬底中的双极放大过程越来越严重,由于局部埋氧层的存在,反而抑制了其源极的双极放大过程,导致它的电荷收集量要明显少于P型浮体器件.因此选择性埋氧层上硅器件比浮体器件更好地抑制了温度对单粒子瞬态脉冲的影响.     

Temperature evolution of spin-transfer switching in nonlocal spin valves with dipolar coupling

The spin-transfer effect has been achieved in nanoscale metallic nonlocal spin valves. A magnetic domain (∼70×150 nm²) in an extended wire can be switched by a pure spin current between 4.5 and 200 K. The dipolar coupling between the magnetic spin injector (F₁) and spin detector (F₂), the surface anisotropy of the thin F₂ layer, and the thermal instability of F₂ generates complex switching characteristics. Analysis of the results allows for detailed understanding of magnetic configurations during the current-sweep and the field-sweep measurements. The critical current (I_c) for spin-transfer switching gradually decreases as the temperature increases. The I_c⁺ for the transition from parallel (P) state to antiparallel (AP) state decreases faster than the I_c^‐ for the transition from AP to P due to the dipolar coupling. Above 200 K, the dipolar coupling and the thermal instability prevents a stable P state in the absence of an external field.     

Electrodynamics of spin currents in superconductors

In recent work we formulated a new set of electrodynamic equations for superconductors as an alternative to the conventional London equations, compatible with the prediction of the theory of hole superconductivity that superconductors expel negative charge from the interior towards the surface. Charge expulsion results in a macroscopically inhomogeneous charge distribution and an electric field in the interior, and because of this a spin current is expected to exist. Furthermore, we have recently shown that a dynamical explanation of the Meissner effect in superconductors leads to the prediction that a spontaneous spin current exists near the surface of superconductors (spin Meissner effect). In this paper we extend the electrodynamic equations proposed earlier for the charge density and charge current to describe also the space and time dependence of the spin density and spin current. This allows us to determine the magnitude of the expelled negative charge and interior electric field as well as of the spin current in terms of other measurable properties of superconductors. We also provide a `geometric' interpretation of the difference between type I and type II superconductors, discuss how superconductors manage to conserve angular momentum, discuss the relationship between our model and Slater's seminal work on superconductivity, and discuss the magnitude of the expected novel effects for elemental and other superconductors.     

Generation of adjustable pure spin currents in negative-U systems

Single-particle sequential tunneling is studied through a negative-U center hybridized with a superconducting, a ferromagnetic, and a normal metal electrodes. In stark contrast to the case of positive U, the single-particle tunneling in attractive charging energy is usually prohibited by ground states with electrons in pairs. We find a microscopic mechanism to induce single-particle sates from pair states. As a consequence, in the nonpolarized metal terminal a remarkable pure spin current with no charge currents survives over a wide range of gate- and bias- voltages, which is rather crucial for experimental observation and design of spintronic devices. In addition, a significant spin-filter effect is presented in certain bias regime.     

Temperature dependence of the luminescence properties of LaCl3：Ce crystal

The optical properties of LaCl3：Ce crystal are reported in this paper. Optical transmission spectrum, photoluminescence and time resolved photoluminescence spectra at different temperatures are investigated. It is found that optical transmittance is as high as 80% between 320 nm and 600 nm, and no obvious absorption band is found in this region. Emission intensity and decay time of photoluminescence are quite stable with the change of the temperature between 80 K and 500 K. No thermal quenching is present up to 500 K, and decay time keeps at 17±2 ns. With the increase of the temperature, the whole emission bands and excitation bands present broadening and overlapping, leading to the strengthening of re-absorption of the Ce^3＋ emission, which makes the emission spectra have a red shift trend.     

自旋-轨道耦合系统中的自旋流定义

通常的自旋流定义在描述自旋-轨道耦合系统中的自旋输运是不完整的与非物理的.文章作者提出在这类系统中自旋流的恰当定义.新定义的自旋流克服了通常定义下的本质缺点,可通过实验直接观测.     

肖特基势垒对铁磁/有机半导体结构自旋注入性质的影响

理论研究了铁磁/有机半导体肖特基接触时的电流自旋极化注入,并讨论了电流自旋极化率随界面处肖特基势垒高度、有机半导体层中特殊载流子及其迁移率、界面附近掺杂浓度的变化关系.通过计算发现,寻找在势垒区中载流子迁移率比较大的有机半导体材料对实现有效的自旋注入是必要的;同时还发现,由于铁磁/有机半导体接触而形成的肖特基势垒不利于自旋注入.因此要想实现有效的自旋注入,界面附近必须采用重掺杂来有效减少势垒区的宽度,且势垒的高度要限制在一定的范围内.     

Temperature dependence of the linewidth of the first-order Raman spectra for MnF2 crystal

The first-order Raman spectra ofE _gandA _1g modes in MnF₂ crystal were measured at temperatures from 4.2 to 563 K, and the values of the linewidths obtained. The temperature dependence of the linewidths was analyzed by the phonon dispersion curves based on the rigid ion model, and the result showed that it was caused approximately by the cubic anharmonic term in crystal potential energy.     

The observation of inherent spin Seebeck effect in Rh/YIG hybrid structure

Rhodium (Rh) is a 4d metal possessing a large spin orbit coupling strength and spin-Hall conductivity with a very small magnetic susceptibility, implying an insignificant magnetic proximity effect (MPE). We report here the observation of longitudinal spin Seebeck effect (LSSE) using Rh as a normal metal. A Rh film was sputtered on nanometer thick YIG films of highly crystalline nature and extremely low magnetic damping to obtain Rh/YIG hybrid structure. A clear thermal voltage V_th (SSE voltage) was obtained when a temperature gradient was applied on the Rh/YIG hybrid. The Rh film showed a very weak anomalous Hall resistance and the magneto-resistive testing clearly ruled out the magnetization of the Rh films via MPE. The anisotropic magnetoresistance (AMR) revealed a clear spin hall magnetoresistance (SMR) signal in Rh film implying a purely intrinsic spin current generation, free from any parasitic magnetic effects. The work can open a new window in the study of pure and uncontaminated spin current, generated in ferromagnetic insulators, using Rh as spin current detector.     

Pure spin currents generation in magnetic tunnel junctions by means of adiabatic quantum pumping

We study the spin polarized currents generation in a magnetic (ferromagnetic/ferromagnetic) tunnel junction by means of adiabatic quantum pumping. Using a scattering matrix approach, it is shown that a pure spin current can be pumped from one ferromagnetic lead into the adjacent one by adiabatic modulation of the magnetization and the height of the barrier at the interface in absence of external bias voltage. We numerically study the characteristic features of the pure spin current and discuss its behavior for realistic values of the parameters. We show that the generated pure spin current is robust with respect to the variation of the magnetization strength, a very important feature for a realistic device, and that the proposed device can operate close to the optimal pumping regime. An experimental realization of a pure spin current injector is also discussed.     

Temperature dependence of birefringence in olarization-maintaining photonic crystal fibres

In this paper,the temperature dependence of birefringence in polarization maintaining photonic crystal fibres(PMPCFs) is investigated theoretically and experimentally.Utilizing the structural parameters of the PM-PCF samples in the experiment,two effects leading to the birefringence variation under different temperatures are analysed,which are the thermal expansion of silica material and the refractive index variation due to the temperature variation.The actual birefringence variation of the PM-PCF is the combination of the two effects,which is in the order of 10-9 K-1 for both fibre samples.Calculation results also show that the influence of refractive index variation is the dominant contribution,which determines the tendency of the fibre birefringence variation with varying temperature.Then,the birefringence beat lengths of the two fibre samples are measured under the temperature,which varies from -40℃ to 80℃.A traditional PANDA-type polarization maintaining fibre(PMF) is also measured in the same way for comparison.The experimental results indicate that the birefringence variation of the PM-PCF due to temperature variation is far smaller than that of the traditional PMF,which agrees with the theoretical analysis.The ultra-low temperature dependence of the birefringence in the PM-PCF has great potential applications in temperature-insensitive fibre interferometers,fibre sensors,and fibre gyroscopes.     

Intrinsic Hall effect and separation of Rashba and Dresselhaus spin splittings in semiconductor quantum wells

We have proposed a method to separate Rashba and Dresselhaus spin splittings in semiconductor quantum wells by using the intrinsic Hall effect. It is shown that the interference between Rashba and Dresselhaus terms can deflect the electrons in opposite transverse directions with a change of sign in the macroscopic Hall current, thus providing an alternative way to determine the different contributions to the spin--orbit coupling.     

Temperature and drain bias dependence of single event transient in 25-nm FinFET technology

In this paper,we investigate the temperature and drain bias dependency of single event transient(SET) in 25-nm fin field-effect-transistor(FinFET) technology in a temperature range of 0-135°C and supply voltage range of 0.4 V-1.6 V.Technology computer-aided design(TCAD) three-dimensional simulation results show that the drain current pulse duration increases from 0.6 ns to 3.4 ns when the temperature increases from 0 to 135°C.The charge collected increases from 45.5 fC to 436.9 fC and the voltage pulse width decreases from 0.54 ns to 0.18 ns when supply voltage increases from 0.4 V to 1.6 V.Furthermore,simulation results and the mechanism of temperature and bias dependency are discussed.     

铁磁异质结构中的超快自旋流调制实现相干太赫兹辐射

利用飞秒激光脉冲在生长于二氧化硅衬底上的W/CoFeB/Pt和Ta/CoFeB/Pt两类铁磁/非磁性金属异质结构中实现高效、宽带的相干THz脉冲辐射.实验中, THz脉冲的相位随外加磁场的反转而反转,表明THz辐射与样品的磁有序密切相关.为了考察三层膜结构THz辐射的物理机制,分别研究了构成三层膜结构的双层异质结构(包括CoFeB/W, CoFeB/Pt和CoFeB/Ta)的THz辐射.实验结果都与逆自旋霍尔效应相符合, W/CoFeB/Pt和Ta/CoFeB/Pt三层膜结构所辐射的THz强度优于同等激发功率下的ZnTe (厚度0.5 mm)晶体.此外,还研究了两款异质结构和ZnTe的THz辐射强度与激发光脉冲能量密度的关系,发现Ta/CoFeB/Pt的饱和能量密度略大于W/CoFeB/Pt的饱和能量密度,表明自旋电子在Ta/CoFeB/Pt中的界面积累效应相对较小.