A 80-MHz bandpass ΔΣ modulator for a 100-MHz IFreceiver

A fully differential fourth-order bandpass ΔΣ modulator is presented. The circuit is targeted for a 100-MHz GSM/WCDMA-multimode IF-receiver and operates at a sampling frequency of 80 MHz. It combines frequency downconversion with analog-to-digital conversion by directly sampling an input signal from an intermediate frequency of 100 MHz to a digital intermediate frequency of 20 MHz. The modulator is based on a double-delay single-op amp switched-capacitor (SC) resonator structure which is well suited for low supply voltages. Furthermore, the center frequency of the topology is insensitive to different component nonidealities. The measured peak signal-to-noise ratio is 80 and 42 dB for 270 kHz (GSM) and 3.84-MHz (WCDMA) bandwidths, respectively. The circuit is implemented with a 0.35-μm CMOS technology and consumes 56 mW from a 3.0-V supply     

A double-sampling pseudo-two-path bandpass ΔΣ modulator

A double-sampling pseudo-two-path bandpass ΔΣ modulator is proposed. This modulator has an output rate equal to twice the clock rate, uses n/2 operational amplifiers (op-amps) for an nth-older noise transfer function, and has reduced clock feedthrough in the signal path band. The required clocks can be simpler to implement than the conventional pseudo-two-path techniques. The measured signal-to-noise ratio and dynamic range of the fourth-order double-sampling pseudo-two-path bandpass ΔΣ modulator in a 30-kHz bandwidth at a center frequency of 2.5 MHz (at a clock frequency of 5 MHz) are 62 and 68 dB, respectively     

A GMSK modulator using a ΔΣ frequencydiscriminator-based synthesizer

This paper describes a new transmitter architecture suitable for wideband GMSK modulation. The technique uses direct modulation of ΔΣ frequency discriminator (ΔΣFD)-based synthesizer to produce the modulated RF signal without any up-conversion. Digital equalization is used to extend the modulation data rate far beyond the synthesizer closed-loop BW. A prototype 1.9-GHz GSM transmitter was constructed consisting of a ΔΣFD-based synthesizer and a digital transmit filter. The synthesizer consists of an 0.8-μm BiCMOS ΔΣFD chip, a digital signal processor FPGA, and an off-chip D/A converter, filter, and VCO. Measured results, using 271-kbit/s GSM modulation, demonstrate data rates well in excess of the 30-kHz synthesizer closed-loop BW are possible with digital equalization. Without modulation, the synthesizer exhibits a -76-dBc spurious noise level and a close-in phase noise of -74 dBc/Hz     

A 15-b resolution 2-MHz Nyquist rate ΔΣ ADC in a1-μm CMOS technology

A high-resolution high-speed fourth-order cascaded ΔΣ analog-to-digital converter, based on a 2-1-1 topology, is presented. The converter is implemented with fully differential switched capacitor circuits in a standard 1-μm CMOS technology. The converter uses two symmetrical reference voltages of 1 V, and is driven by a single 48-MHz clock signal. With an oversampling ratio of only 24, the converter achieves a resolution of 91 dB, a peak SNR of 90 dB, and a peak SNDR of 85 dB at a Nyquist rate of 2 MHz after comb filtering. The power consumption of the converter is 230 mW, from a single 5-V supply voltage     

A 1.8-V ΔΣ modulator interface for an electretmicrophone with on-chip reference

The design of a delta-sigma (ΔΣ) analog-to-digital converter (ADC) for direct voltage readout of an electret microphone is presented. The ADC is integrated on the same chip with a bandgap voltage reference and is designed to be packaged together with an electret microphone. Having a power consumption of 1.7 mW from a supply voltage of 1.8 V, the circuit is well suited for use in mobile applications. The single-loop, single-bit, fourth-order ΔΣ ADC operates at 64 times oversampling for a signal bandwidth of 11 kHz. The measured dynamic range is 80 dB and the peak signal-to-(noise+distortion) ratio is 62 dB. The harmonic distortion is minimized by using an integrator with an instrumentation amplifier-like input which directly integrates the 125-mV peak single-ended voltage generated by the microphone. A combined continuous-time/switched-capacitor design is used to minimize power consumption     

A 0.2-mW CMOS ΣΔ modulator for speech coding with 80 dBdynamic range

A CMOS ΣΔ modulator for speech coding with continuous-time loopfilter is presented. Compared to switched-capacitor implementations, the relaxed bandwidth requirements of the active elements of the loopfilter reduce the power consumption. Furthermore, the need for an antialiasing filter at the modulator input is eliminated. A fourth-order, 64× oversampling ΣΔ modulator for application in portable telephones was designed and shows 80 dB dynamic range over the 300-3400 Hz voice bandwidth. Its input is directly connected to the microphone (maximum 40 mV_RMS). Total harmonic distortion (THD) is below -70 dB at 95 μA current consumption from a 2.2 V supply voltage. The active die area of the modulator is 0.5 mm² in a standard 0.5-μm CMOS process     

A 1.1-GHz CMOS fractional-N frequency synthesizer with a 3-bthird-order ΔΣ modulator

A 1.1-GHz fractional-N frequency synthesizer is implemented in 0.5-μm CMOS employing a 3-b third-order ΔΣ modulator. The in-band phase noise of -92 dBc/Hz at 10-kHz offset with a spur of less than -95 dBc is measured at 900.03 MHz with a phase detector frequency of 7.994 MHz and a loop bandwidth of 40 kHz. Having less than 1-Hz frequency resolution and agile switching speed, the proposed system meets the requirements of most RF applications including multislot GSM, AMPS, IS-95, and PDC     

A two-path bandpass ΣΔ modulator for digital IFextraction at 20 MHz

Oversampled bandpass A/D converters based on sigma-delta (ΣΔ) modulation can be used to robustly digitize the types of narrowband intermediate frequency (IF) signals that arise in radios and cellular systems. This paper proposes a two-path architecture for a fourth-order, bandpass modulator that is more tolerant of analog circuit limitations at high sampling speeds than conventional implementations based on the use of switched-capacitor biquadratic filters. An experimental prototype employing the two-path topology has been integrated in a 0.6-μm, single-poly, triple-metal CMOS technology with capacitors synthesized from a stacked metal structure. Two interleaved paths clocked at 40 MHz digitize a 200-kHz bandwidth signal centered at 20 MHz with 75 dB of dynamic range while suppressing the undesired mirror image signal by 42 dB. At low input signal levels, the mixing of spurious tones at DC and f_s/2 with the input appears to degrade the performance of the modulator; out-of-band sinusoidal dither is shown to be an effective means of avoiding this degradation. The experimental modulator dissipates 72 mW from a 3.3 V supply     

An eighth-order bandpass ΔΣ modulator for A/Dconversion in digital radio

This paper examines the design and implementation of an eighth-order bandpass delta-sigma modulator. The design process is investigated from the signal flow graph level, through to the details of the switched capacitor implementation and layout considerations. Simulation results, highlighting the effects of process variation, are provided and the experimental performance of the modulator described. The modulator is implemented in a 0.8-μm BiCMOS process and occupies an active area of 1.7 mm². Operating from ±2.5-V supplies, the fabricated prototype exhibits stable behaviour and achieves a dynamic range of 67 dB over a 200-kHz bandwidth centered at the commonly used intermediate frequency of 10.7 MHz. This paper, therefore, demonstrates the viability of high-order single-bit bandpass delta-sigma modulation     

A low oversampling ratio 14-b 500-kHz ΔΣ ADC with aself-calibrated multibit DAC

Delta-sigma (ΔΣ) analog-to-digital converters (ADC's) rely on oversampling to achieve high-resolution. By applying multibit quantization to overcome stability limitations, a circuit topology with greatly reduced oversampling requirements is developed. A 14-bit 500-kHz ΔΣ ADC is described that uses an oversampling ratio of only 16. A fourth-order embedded modulator, four-bit quantizer, and self-calibrated digital-to-analog converter (DAC) are used to achieve this performance. Although the high-order embedded architecture was previously thought to be unstable, it is shown that with proper design, a robust system can be obtained. Circuit design and implementation in a 1.2-μm CMOS process are presented. Experimental results give a dynamic range of 84 dB with a sampling rate of 8 MHz and oversampling ratio of 16. This is the lowest oversampling ratio for this resolution and bandwidth achieved to date     

A quadrature data-dependent DEM algorithm to improve imagerejection of a complex ΣΔ modulator

A dynamic element matching (DEM) algorithm is presented that is controlled by the quadrature output data of a complex sigma-delta modulator. This DEM technique is used to correct the gain and phase errors between the circuits in the in-phase and quadrature-phase feedback paths of the modulator. The key feature of this DEM technique is that it does not cause leakage of high-frequency quantization noise in the signal band, as encounters with the periodic or pseudorandom DEM techniques. No test signal is required to measure the gain and phase errors, and as the DEM circuit is operating continuously, it compensates for changes in, e.g., temperature and supply voltage. A 0.35-μm CMOS prototype chip has been designed to test the DEM circuit. A batch of 38 measured samples shows a typical mismatch-independent image rejection ratio of 63 dB with DEM     

A multibit ΣΔ modulator in floating-body SOS/SOI CMOSfor extreme radiation environments

This paper presents the design of an experimental first-order ΣΔ modulator with 4-bit internal quantization, fabricated in a 1.5-μm space-qualified radiation-hard partially depleted silicon-on-sapphire (SOS) digital CMOS process. This converter architecture has been chosen partly to allow investigation into the design of a range of common analog functions with two key issues in mind: one of technology and one environmental. First, both the architecture and the circuit design are optimized using a variety of unconventional techniques to account for the influence of extreme bias-dependent, radiation-induced threshold-voltage shifts of up to 1 V, as well as poor 1/f device noise. Second, the circuitry is specially adapted to accommodate the floating-body behavior of this type of process, wherein drain conductance varies considerably with drain bias and frequency. The design techniques are directly applicable to very large-scale-integration silicon-on-insulator (SOI) design, where similar device physics are encountered. Notwithstanding the severe constraints on the design, the fabricated circuit provides 9.7 bits of dynamic range in a 63-kHz signal bandwidth, only degrading to 9.1 bits after 23 Mrad(Si) of total dose γ radiation     

Multi-bit cascade ΣΔ modulator for high-speed A/Dconversion with reduced sensitivity to DAC errors

The authors present a ΣΔ modulator (ΣΔM) which combines single-bit and multi-bit quantisation in a cascade architecture to obtain high resolution with a low oversampling ratio. It is less sensitive to the nonlinearity of the digital-to-analogue (DAC) than those previously reported, thus enabling the use of very simple analogue circuitry with neither calibration nor trimming required     

Very low-voltage digital-audio ΔΣ modulator with 88-dBdynamic range using local switch bootstrapping

A 1-V 1-mW 14-bit ΔΣ modulator in a standard CMOS 0.35-μm technology is presented. Special attention has been given to device reliability and power consumption in a switched-capacitor implementation. A locally bootstrapped symmetrical switch that avoids gate dielectric overstress is used in order to allow rail-to-rail signal switching. The switch constant overdrive also enhances considerably circuit linearity. Modulator coefficients of a single-loop third-order topology have been optimized for low power. Further reduction in the power consumption is obtained through a modified two-stage opamp. Measurement results show that for an oversampling ratio of 100, the modulator achieves a dynamic range of 88 dB, a peak signal-to-noise ratio of 87 dB and a peak signal-to-noise-plus-distortion ratio of 85 dB in a signal bandwidth of 25 kHz     

A 3-V, 2%-mW multibit current-mode ΣΔ DAC with 100 dBdynamic range

The area ratio of analog to digital for mixed-mode chip has been inversely proportional to the process design rule for a given dynamic range objective, in contradiction to the LSI trend. This paper presents a design approach to realize a high degree of size reduction with process design rules for analog circuitry and a signal processing architecture for digital circuitry. A five-level current-mode ΣΔ digital-to-analog converter (DAC) system reveals full scale total harmonic: distortion plus noise (THD+N) of -90 dB and dynamic-range of 100 dB at 3 V (low power of 22 mW). Analog-area down-scaling can be accomplished by this architecture to be 1.09 mm², using 0.6-μm double-poly double-metal (DPDM) CMOS. For the digital filter, a pipeline instruction sequence with multiplierless architecture also gives small area of 1.98 mm²     

A 1.8-mW CMOS ΣΔ modulator with integrated mixer forA/D conversion of IF signals

In this paper, the design of a continuous-time baseband sigma-delta (ΣΔ) modulator with an integrated mixer for intermediate-frequency (IF) analog-to-digital conversion is presented. This highly linear IF ΣΔ modulator digitizes a GSM channel at intermediate frequencies up to 50 MHz. The sampling rate is not related to the input IF and is 13.0 MHz in this design. Power consumption is 1.8 mW from a 2.5-V supply. Measured dynamic range is 82 dB, and third-order intermodulation distortion is -84 dB for two -6-dBV IF input tones. Two modulators in quadrature configuration provide 200-kHz GSM bandwidth. Active area of a single IF ΣΔ modulator is 0.2 mm² in 0.35-μm CMOS     

2.7 V 50 MHz IF sampling ΔΣ modulator with +37 dBV IIP3

The design and experimental results of a 2.7 V 50 MHz switched-capacitor DS modulator in a 0.35 μm BiCMOS process are presented. The circuit is targeted for the IF section of a radio receiver in a GSM cellular phone. It combines frequency downconversion with analogue to digital conversion by directly sampling an input signal from an IF of 50 MHz. The measured peak signal-to-noise ratio for a 100 kHz bandwidth is 81 dB with a 53 MHz blocking signal and the measured IIP3 for IF input is +36.9 dBV     

A 1-V 10-MHz clock-rate 13-bit CMOS ΔΣ modulator usingunity-gain-reset op amps

The problem of low-voltage operation of switched-capacitor circuits is discussed, and several solutions based on using unity-gain-reset of the opamps are proposed. Due to the feedback structure, the opamps do not need to be switched off during the reset phase of the operation, and hence can be clocked at a high rate. A low-voltage ΔΣ modulator, incorporating pseudodifferential unity-gain-reset opamps, is described. A test chip, realized in a 0.35-μm CMOS process and clocked at 10.24 MHz, provided a dynamic range of 80 dB and a signal-to-noise+distortion (SNDR) ratio of 78 dB for a 20-kHz signal bandwidth, and a dynamic range of 74 dB and SNDR of 70 dB for a 50-kHz bandwidth, with a 1-V supply voltage     

A stereo multibit ΣΔ DAC with asynchronous master-clockinterface

A two-channel multibit ΣΔ audio digital-to-analog converter (DAC) with on-chip digital phase-locked loop and sample-rate converter is described. The circuit requires no over-sampled synchronous clocks to operate and rejects input sample clock jitter above 16 Hz at 6 dB/octave. A second-order modulator with a multibit quantizer, switched-capacitor (SC) DAC, and single-ended second-order SC filter provides a measured out-of-band noise of -63 dBr with less than 0.1° phase nonlinearity. Measured S/(THD+N) of the DAC channel including a 0-63 dB, 1 dB/step attenuator is greater than 90 dB unweighted. The circuit is implemented in 0.6-μm DPDM CMOS, dissipating 220 mW at 5 V. Die size is 3 mm×4 mm