共查询到18条相似文献，搜索用时 93 毫秒
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我们成功研制了栅长为0.15 μm、栅宽为2?50 μm、源漏间距为2 μm 的InP 基In0.52Al0.48As/In0.53Ga0.47As高电子迁移率器件。室温下,当器件VDS为1.7 V,VGS为0.1 V时,其有效跨导达到了1052 mS/mm。传输线方法(TLM)测试显示器件的接触电阻为0.032 Ω.mm,器件欧姆接触电阻率为1.03?10-7Ω.cm-2. 正是良好的欧姆接触及其短的源漏间距减小了源电阻,进而使得有效跨导比较大。器件还有比较好的射频特性：当VDS＝1.5 V, VGS ＝0.1 V 时,fT和fmax分别为151 GHz,303 GHz。文章报道的HEMT器件非常适合毫米波段集成电路的研制。 相似文献
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利用新型的PMMA/PMGI/ZEP520/PMGI四层胶T形栅电子束光刻技术制备出120nm栅长InP基雁配In0.7Ga0.3As/In0.52Al0.48As 高电子迁移率晶体管。制作出的InP基HEMT器件获得了良好的直流和高频性能,跨导、饱和漏电流密度、阈值电压、电流增益截止频率和最大单向功率增益频率分别达到520 mS/mm, 446 mA/mm, -1.0 V, 141 GHz 及 120 GHz。文中的材料结构和所有器件制备均为本研究小组自主研究开发。 相似文献
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将In0.53Ga0.47As吸收层设计为多个薄层,通过不同浓度掺杂实现吸收层杂质指数分布,建立了InP/In0.53Ga0.47As/InP红外光电阴极模型,在皮秒级响应时间的前提下模拟了吸收层厚度、掺杂浓度和阴极外置偏压对阴极内量子效率的影响,给出了光电子在吸收层和发射层的一维连续性方程和边界条件,计算了光电子克服激活层势垒发射到真空中的几率,进而获得阴极外量子效率随上述三个因素的变化规律,结果表明,吸收层掺杂浓度在1015~1018 cm-3范围内变化时,内量子效率变化很小;随着吸收层厚度在0.09~0.81 m内增大,内量子效率随之增大;随着外置偏压升高,内量子效率先增大后趋于平稳。文中给出一组既能获得高量子效率又能有快时间响应的阴极设计参数,理论上1.55 m入射光可以获得8.4%的外量子效率,此时响应时间为49 ps。 相似文献
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建立了SACM型In0.53Ga0.47As/In0.52Al0.48As雪崩光电二极管(APD)的分析模型,通过数值研究和理论分析设计出高性能的In0.53Ga0.47As/In0.52Al0.48As APD。器件设计中,一方面添加了In0.52Al0.48As势垒层来阻挡接触层的少数载流子的扩散,进而减小暗电流的产生;另一方面,雪崩倍增区采用双层掺杂结构设计,优化了器件倍增区的电场梯度分布。最后,利用ATLAS软件较系统地研究并分析了雪崩倍增层、电荷层以及吸收层的掺杂水平和厚度对器件电场分布、击穿电压、IV特性和直流增益的影响。优化后APD的单位增益可以达到0.9 A/W,在工作电压(0.9 Vb)下增益为23.4,工作暗电流也仅是纳安级别(@0.9 Vb)。由于In0.52Al0.48As材料的电子与空穴的碰撞离化率比InP材料的差异更大,因此器件的噪声因子也较低。 相似文献
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正An 88 nm gate-length In_(0.53)Ga_(0.47)As/In_(0.52)Al_(0.48)As InP-based high electron mobility transistor (HEMT) was successfully fabricated with a gate width of 2×50μm and source-drain space of 2.4μm.The T-gate was defined by electron beam lithography in a trilayer of PMMA/A1/UⅧ.The exposure dose and the development time were optimized,and followed by an appropriate residual resist removal process.These devices also demonstrated excellent DC and RF characteristics:the extrinsic maximum transconductance,the full channel current, the threshold voltage,the current gain cutoff frequency and the maximum oscillation frequency of the HEMTs were 765 mS/mm,591 mA/mm,-0.5 V,150 GHz and 201 GHz,respectively.The HEMTs are promising for use in millimeter-wave integrated circuits. 相似文献
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120 nm gate-length In_(0.7)Ga_(0.3)As/In_(0.52)Al_(0.48) As InP-based high electron mobility transitions(HEMTs) are fabricated by a new T-shaped gate electron beam lithograph(EBL) technology,which is achieved by the use of a PMMA/PMGI/ZEP520/PMGI four-layer photoresistor stack.These devices also demonstrate excellent DC and RF characteristics:the transconductance,maximum saturation drain-to-source current,threshold voltage,maximum current gain frequency,and maximum power-gain cutoff frequency of InGaAs/I... 相似文献
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A new PMMA/PMGI/ZEP520/PMGI four-layer resistor electron beam lithography technology is successfully developed and used to fabricate a 120 nm gate-length lattice-matched In_(0.53)Ga_(0.47)As/In_(0.52)Al_(0.48) As InP-based HEMT,of which the material structure is successfully designed and optimized by our group.A 980 nm ultra-wide T-gate head,which is nearly as wide as 8 times the gatefoot(120 nm),is successfully obtained,and the excellent T-gate profile greatly reduces the parasitic resistance and capaci... 相似文献
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InP-based high electron mobility transistors (HEMTs) were fabricated by depositing Pt-based multilayer metallization on top of a 6-nm-thick InP etch stop layer and then applying a post-annealing process. The performances of the fabricated 55-nm-gate HEMTs before and after the post-annealing were characterized and were compared to investigate the effect of the penetration of Pt through the very thin InP etch stop layer. After annealing at 250 °C for 5 min, the extrinsic transconductance (Gm) was increased from 1.05 to 1.17 S/mm and Schottky barrier height was increased from 0.63 to 0.66 eV. The unity current gain cutoff frequency (fT) was increased from 351 to 408 GHz, and the maximum oscillation frequency (fmax) was increased from 225 to 260 GHz. These performance improvements can be attributed to penetration of the Pt through the 6-nm thick InP layer, and making contact on the InAlAs layer. The STEM image of the annealed device clearly shows that the Pt atoms contacted the InAlAs layer after penetrating through the InP layer. 相似文献
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利用新型的PMMA/PMGI/ZEP520/PMGI四层胶电子束光刻胶研制出一种性能卓越的T型栅,该T型栅栅头宽980纳米,栅脚宽120纳米,有效地减小了栅的寄生电阻和电容效应, 增强了器件的高频特性。利用该T型栅工艺制备出的120nm栅长晶格匹配In0.53Ga0.47As/In0.52Al0.48As InP基HEMT器件获得了优越的直流和高频性能,电流增益截止频率和最大单向功率增益频率分别达到190 GHz 及 146 GHz。文中的材料结构和所有器件制备均为本研究小组自主研究开发。 相似文献
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Harrang J.P. Daniels R.R. Fuji H.S. Griem H.T. Ray S. 《Electron Device Letters, IEEE》1991,12(5):206-209
The authors report the successful demonstration of a 1.0-μm gate InAlAs/InGaAs heterojunction FET (HFET) on top of thick InGaAs layers using lattice-matched molecular beam epitaxy (MBE). This scheme is compatible with metal-semiconductor-metal (MSM) photodetector fabrication. The authors measured the performance of InAlAs/InGaAs HFETs from 0 to 40 GHz. Device performance is characterized by peak extrinsic transconductances of 390 mS/mm and as-measured cutoff frequencies up to 30 GHz for a nominal 1.0-μm-gate-length HFET. HFET device measurements are compared for samples growth with and without the thick underlying InGaAs optical-detector absorbing layer 相似文献
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Magneto-transport and cyclotron resonance measurements were made to determine directly the density, mobility, and the effective mass of the charge carriers in a high-performance 0.15-μm gate In0.52 Al0.48As/In0.53Ga0.47As high-electron-mobility transistor (HEMT) at low temperatures. At the gate voltage V G=0 V, the carrier density n g under the gate is 9×1011 cm-2, while outside of the gate region n g=2.1×1012 cm-2. The mobility under the gate at 4.2 K is as low as 400 cm2/V-s when V G<0.1 V and rapidly approaches 11000 cm2/V-s when V G>0.1 V. The existence of this high mobility threshold is crucial to the operation of the device and sets its high-performance region in V G>0.1 V 相似文献
