Energy band structure and X-ray spectra of phenakite Be<Subscript>2</Subscript>SiO<Subscript>4</Subscript>

The electronic structure of crystalline phenakite Be₂SiO₄ is investigated using x-ray emission spectroscopy (XES) (Be K _α XES, Si L _{2, 3} XES, O K _α XES) and x-ray absorption spectroscopy (XAS) (Be 1s XAS, Si 2p XAS, O 1s XAS). The energy band structure is calculated by the ab initio full-potential linearized augmented-plane-wave (FLAPW) method. The total and partial densities of states and the dispersion curves for the Be₂SiO₄ compound are presented. It is shown that the top of the valence band and the bottom of the conduction band of the Be₂SiO₄ compound are predominantly formed by the oxygen 2p states. According to the results obtained, the electron transition with the lowest energy supposedly can occur at the center of the Brillouin zone. The effective masses of electrons (0.5m _e ) and holes (3.0m _e ) for the Be₂SiO₄) compound are estimated.     

Structural transformations of K<Subscript>3</Subscript>H(SO<Subscript>4</Subscript>)<Subscript>2</Subscript> crystals with variations in temperature

Single crystals of the K₃H(SO₄)₂ compound are investigated using X-ray diffraction on Xcalibur S and Bruker diffractometers. The structure of the low-temperature monoclinic phase is refined (space group C2/c, z = 4, a = 14.698(1) Å, b = 5.683(1) Å, c = 9.783(1) Å, β = 103.01(1)°, T = 293 K, Bruker diffractometer), the structural phase transition is revealed, and the structure of the high-temperature trigonal phase is determined (space group R \(\bar 3\) m, z = 3, a = 5.73(1) Å,c = 21.51(1) Å,T = 458 K, Xcalibur diffractometer).     

X-ray reflectivity and photoelectron spectroscopy of superlattices with silicon nanocrystals

The structural properties and features of the chemical composition of SiO _x N _y /SiO₂, SiO _x N _y /Si₃N₄, and SiN _x /Si₃N₄ multilayer thin films with ultrathin (1–1.5 nm) barrier SiO₂ or Si₃N₄ layers are studied. The films have been prepared by plasma chemical vapor deposition and have been annealed at a temperature of 1150°С for the formation of silicon nanocrystals in the SiO _x N _y or SiN _x silicon-rich layers with a nominal thickness of 5 nm. The period of superlattices in the studied samples has been estimated by X-ray reflectivity. The phase composition of superlattices has been studied by X-ray electron spectroscopy using the decomposition of photoelectron spectra of the Si 2p, N 1s, and O 1s levels into components corresponding to different charge states of atoms.     

On the correlation between supercooling,superheating and kinetic arrest in a magnetic glass Pr<Subscript>0.5</Subscript>Ca<Subscript>0.5</Subscript>Mn<Subscript>0.975</Subscript>Al<Subscript>0.025</Subscript>O<Subscript>3</Subscript>

We report a quantitative investigation of the magnetic field-temperature phase diagram by taking into account a simple phenomenological model arising out of the interplay of kinetic arrest and thermodynamic transitions in a magnetic glass Pr_0.5Ca_0.5Mn_0.975Al_0.025O₃, through magnetization measurements. Such studies are necessary as kinetic arrest plays an important role in the formation of “magnetic glasses”, which has been observed in systems undergoing first order magnetic phase transitions. It has been shown that disorder in a system results in the formation kinetic arrest (H _K ,T _K ) band, like supercooling (H ^*,T ^*) and superheating (H ^**,T ^**) band. Quantitative proofs are given to show that (H _K ,T _K ) band is anticorrelated with (H ^*,T ^*) and (H ^**,T ^**) bands, while the later two are correlated among themselves. Analysis of time dependence of magnetization at different temperatures is carried out to establish the fact that the kinetic arrested state is different from the supercooled state.     

Electronic and optical properties of Fe<Subscript>2</Subscript>SiO<Subscript>4</Subscript> under pressure effect: ab initio study

We report first-principles studies the structural, electronic, and optical properties of the Fe₂SiO₄ fayalite in orthorhombic structure, including pressure dependence of structural parameters, band structures, density of states, and optical constants up to 30 GPa. The calculated results indicate that the linear compressibility along b axis is significantly higher than a and c axes, which is in agreement with earlier work. Meanwhile, the pressure dependence of the electronic band structure, density of states and partial density of states of Fe₂SiO₄ fayalite up to 30 GPa were presented. Moreover, the evolution of the dielectric function, absorption coefficient (α(ω)), reflectivity (R(ω)), and the real part of the refractive index (n(ω)) at high pressure are also presented.     

Röntgenspektroskopische Untersuchung der Struktur des Valenzbandes von Silicium,Siliciumcarbid und Siliciumdioxid

With a photon-counting concave grating spectrograph the SiL _2,3 emission bands of pure Si, SiC and SiO₂ (quartz) were investigated. The observed bands are in good agreement with recent measurements using photon-counting devices but differ markedly from those obtained with photographic registration. The comparison of these SiL _2,3 bands with the corresponding SiKβ bands observed by other authors shows that the intensity distributions are more or less complementary. For Si and SiC the experimental results are compared with recent calculations of the electronic band structure. The agreement between the measuredK andL emission bands of silicon and the calculated density of states curve of silicon is satisfactory.     

Hydrogen solubility in amorphous Mg<Subscript>0.6</Subscript>SiO<Subscript>2.6</Subscript> at high pressure

The solubility of hydrogen in amorphous Mg_0.6SiO_2.6 at a temperature of 250°C and pressures up to 75 kbar is studied using a quenching technique. The molar ratio H₂/formula unit is found to nonlinearly increase with pressure from x = 0.12 at P = 10 kbar to x = 0.303 at P = 75 kbar. An investigation of the quenched samples by Raman spectroscopy demonstrated that hydrogen dissolves in amorphous Mg_0.6SiO_2.6 in the form of H₂ molecules. X-ray diffraction and Raman studies showed that the hydrogenation of the samples is likely to be accompanied by a phase transition in the amorphous lattice of Mg_0.6SiO_2.6 at P ≈ 52.5 kbar to a denser amorphous modification.     

Ferroelastic phase transition in crystalline K<Subscript>3</Subscript>Na(CrO<Subscript>4</Subscript>)<Subscript>2</Subscript>: Acoustic studies

Ultrasonic studies of the temperature behavior of the velocity and damping of sound for the xx and zz longitudinal and yx and zx transverse waves in K₃Na(CrO₄)₂ have been carried out in the temperature interval 185–295 K, which includes the region of the ferroelastic phase transition. The acoustic parameters for both shear and longitudinal waves were found to have anomalies in the region of the phase transition with a Curie temperature of 235.5 K. A theoretical analysis of the softening of the elastic moduli c₄₄ and c₆₆ was performed on the basis of the Landau expansion in terms of the strain tensor components ?₄ and (?₂-?₁)/2 considered as the linearly coupled primary and secondary order parameter, respectively. The absolute values of the elastic moduli c₁₁, c₃₃, c₄₄, c₆₆, c₁₂, and c₁₄ at 295 K were calculated.     

Glass formation in amorphous SiO<Subscript>2</Subscript> as a percolation phase transition in a system of network defects

Thermodynamic parameters of defects (presumably, defective SiO molecules) in the network of amorphous SiO₂ are obtained by analyzing the viscosity of the melt with the use of the Doremus model. The best agreement between the experimental data on viscosity and the calculations is achieved when the enthalpy and entropy of the defect formation in the amorphous SiO₂ network are H _d =220 kJ/mol and S _d =16.13R, respectively. The analysis of the network defect concentration shows that, above the glass-transition temperature (T _g ), the defects form dynamic percolation clusters. This result agrees well with the results of molecular dynamics modeling, which means that the glass transition in amorphous SiO₂ can be considered as a percolation phase transition. Below T _g , the geometry of the distribution of network defects is Euclidean and has a dimension d=3. Above the glass-transition temperature, the geometry of the network defect distribution is non-Euclidean and has a fractal dimension of d _f =2.5. The temperature T _g can be calculated from the condition that percolation arises in the defect system. This approach leads to a simple analytic formula for the glass-transition temperature: T _g =H _d /((S _d +1.735R). The calculated value of the glass-transition temperature (1482 K) agrees well with that obtained from the recent measurements of T _g for amorphous SiO₂ (1475 K).     

Concerning bent-crystal spectrometer measurements ofKαx-rays from radioactive sources

The wavelengths of severalKα x-rays emitted from elements in and neighboring the rare earth region which were contained in radioactive sources have been determined with the two-meter quartz bent-crystal spectrometer at the California Institute of Technology. The results of the measurements in XU are the following: SmKα₂, 313·043; SmKα₁, 308·390; EuKα₂, 302·477; EuKα₁, 297·824; GdKα₂, 292·432; GdKα₁, 287·746; TmKα₂, 248·592; TmKα₁, 243·859; YbKα₂, 240·934; YbKα₁, 236·184; LuKα₂, 233·610; LuKα₁, 228·834; HfKα₂, 226·605; HfKα₁, 221·805. The estimated maximal error for each measurement is ±0·015 XU. From comparing the present measurements with precise measurements of the corresponding x-rays from the naturally occurring elements, it can be concluded that there are no observable shifts in the x-rays from the radioactive sources within 0·017 XU. An upper limit of 2·5 eV is obtained for an observable shift due to the isotope shift or the isomeric shift in the GdKα x-rays from a radioactive Eu source. Upper limits for the observation of shifts due to the isomeric shift in theKα x-rays of 2·5 eV for Sm and of 4 eV for Tm and Lu are also obtained.     

Optical properties of mechanically compressed K<Subscript>2</Subscript>SO<Subscript>4</Subscript> crystals

The effect of a uniaxial mechanical compression (σ_m ≤ 100 bar) on the spectral dependences (300–800 nm) of the birefringence Δn _i and refractive indices n _i of K₂SO₄ crystals is studied. The electronic polarizabilities, refractions, and parameters (λ_0i , B _1i ) of ultraviolet oscillators of mechanically compressed crystals are calculated. It is shown that the dispersions of Δn _i(λ) and n _i(λ) are normal and sharply increase near the absorption edge. It is found that the uniaxial compression changes the value of the dispersions dΔn _i/dλ and dn _i/dλ rather than their character. It is ascertained that the simultaneous action of the compressions σ_x and σ_z, as well as of σ_y and σ_z, leads to the appearance of new isotropic states in the K₂SO₄ crystal, which manifests itself in the equality of corresponding birefringences. It is shown that the baric dependences n _i(σ) are determined by the change in the density of oscillators (～30%), by the shift of the absorption edge and effective band maximum and by the change in the oscillator strength (～70%).     

X-ray study of [N(CH<Subscript>3</Subscript>)<Subscript>4</Subscript>]<Subscript>2</Subscript>ZnCl<Subscript>4</Subscript> at low temperatures

The unit cell parameters a, b, and c of [N(CH₃)₄]₂ZnCl₄ have been measured by x-ray diffraction in the temperature range 80–293 K. Temperature dependences of the thermal expansion coefficients α_a, α_b, and α_c along the principal crystallographic axes and of the unit cell thermal expansion coefficient α_V were determined. It is shown that the a=f(T), b=f(T), and c=f(T) curves exhibit anomalies in the form of jumps at phase transition temperatures T₁=161 K and T₂=181 K and that the phase transition occurring at T₃=276 K manifests itself in the a=f(T) and b=f(T) curves as a break. A slight anisotropy in the coefficient of thermal expansion of the crystal was revealed. The phase transitions occurring at T₁=161 K and T₂=181 K in [N(CH₃)₄]₂ZnCl₄ were established to be first-order.     

Chemical and phase compositions of multilayer nanoperiodic <Emphasis Type="Italic">a</Emphasis>-SiO<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>/ZrO<Subscript>2</Subscript> structures subjected to high-temperature annealing

The chemical and the phase compositions of multilayer nanoperiodic SiO _x /ZrO₂ structures prepared by vacuum evaporation from separated sources and subjected to high-temperature annealing have been studied by X-ray photoelectron spectroscopy with a layer-by-layer etching. It is found that, under deposition conditions used, the silicon suboxide layers had the stoichiometric coefficient x ~1.8 and the zirconium-containing layers were the stoichiometric zirconium dioxide. It was found, using X-ray photoelectron spectroscopy, that annealing of the multilayer structures at 1000°C leads to mutual diffusion of the components and chemical interaction between ZrO₂ and SiO _x with predominant formation of zirconium silicate at heteroboundaries of the structures. The SiO _x layers of the annealed nanostructures contained ~5 at % elemental silicon as a result of the phase separation and the formation of fine silicon nanocrystals.     

Phase diagrams of bosonic AB<Subscript>n</Subscript> chains

The AB_{N ?1} chain is a system that consists of repeating a unit cell withN siteswhere between the A and B sites there is an energy difference ofλ. Weconsidered bosons in these special lattices and took into account the kinetic energy, thelocal two-body interaction, and the inhomogenous local energy in the Hamiltonian. We foundthe charge density wave (CDW) and superfluid and Mott insulator phases, and constructedthe phase diagram for N =2 and 3 atthe thermodynamic limit. The system exhibited insulator phases for densitiesρ =α/N, with α being an integer. Weobtained that superfluid regions separate the insulator phases for densities larger thanone. For any N value, we found that for integer densitiesρ, thesystem exhibits ρ +1 insulator phases, a Mott insulator phase, and ρ CDW phases. Fornon-integer densities larger than one, several CDW phases appear.     

Pressure-induced superconductivity and structural transitions in Ba(Fe<Subscript>0.9</Subscript>Ru<Subscript>0.1</Subscript>)<Subscript>2</Subscript>As<Subscript>2</Subscript>

Electrical transport and structural characterizations of isoelectronically substituted Ba(Fe_0.9Ru_0.1)₂As₂ have been performed as a function of pressure up to ～ 30 GPa and temperature down to ～ 10 K using designer diamond anvil cell. Similar to undoped members of the AFe₂As₂ (A = Ca, Sr, Ba) family, Ba(Fe_0.9Ru_0.1)₂As₂ shows anomalous a-lattice parameter expansion with increasing pressure and a concurrent ThCr₂Si₂ type isostructural (I4/mmm) phase transition from tetragonal (T) phase to a collapsed tetragonal (cT) phase occurring between 12 and 17 GPa where the a is maximum. Above 17 GPa, the material remains in the cT phase up to 30 GPa at 200 K. The resistance measurements show evidence of pressure-induced zero resistance that may be indicative of high-temperature superconductivity for pressures above 3.9 GPa. The onset of the resistive transition temperature decreases gradually with increasing pressure before completely disappearing for pressures above ～ 10.6 GPa near the T-cT transition. We have determined the crystal structure of the high-T _c phase of Ru-doped BaFe₂As₂ to remain as tetragonal (I4/mmm) by analyzing the X-ray diffraction pattern obtained at 10 K and 9.7 ± 0.7 GPa, as opposed to inferring the structural transition from electrical resistance measurement, as in a previous report [S.K. Kim, M.S. Torikachvili, E. Colombier, A. Thaler, S.L. Bud’ko, P.C. Canfield, Phys. Rev. B 84, 134525 (2011)].     

Charge storage behavior of nanostructures based on SiGe nanocrystals embedded in Al<Subscript>2</Subscript>O<Subscript>3</Subscript> matrix

The charge storage behavior of nanostructures based on Si_1?x Ge _x (0 ≤ x ≤ 1) nanocrystals (NCs) in an Al₂O₃ matrix was investigated. The structures have been grown by RF magnetron sputtering and subsequently annealed at temperatures ranging from 700 °C to 1000 °C for 30 min in nitrogen ambient. The stoichiometry of the SiGe NCs and the alumina crystalline structure were found to be significantly dependent on the RF power and the annealing temperature. The sizes of the SiGe NCs and their distribution were investigated by grazing incidence small angle X-ray scattering (GISAXS). The capacitance-voltage (C-V) and conductance-voltage (G-V) measurements were performed to investigate the charge trapping characteristics of the memory structures. The C-V hysteresis width depends on variations in the crystalline structure resulting from different annealing temperatures. It is also shown that charge injection is governed by the Fowler-Nordheim tunnel mechanism for higher electric fields.     

Properties of an Al<Subscript>2</Subscript>O<Subscript>3</Subscript>/Si interface

The phase chemical composition of an Al₂O₃/Si interface formed upon molecular deposition of a 100-nm-thick Al₂O₃ layer on the Si(100) (c-Si) surface is investigated by depth-resolved ultrasoft x-ray emission spectroscopy. Analysis is performed using Al and Si L_{2, 3} emission bands. It is found that the thickness of the interface separating the c-Si substrate and the Al₂O₃ layer is approximately equal to 60 nm and the interface has a complex structure. The upper layer of the interface contains Al₂O₃ molecules and Al atoms, whose coordination is characteristic of metallic aluminum (most likely, these atoms form sufficiently large-sized Al clusters). The shape of the Si bands indicates that the interface layer (no more than 10-nm thick) adjacent to the substrate involves Si atoms in an unusual chemical state. This state is not typical of amorphous Si, c-Si, SiO₂, or SiO_x (it is assumed that these Si atoms form small-sized Si clusters). It is revealed that SiO₂ is contained in the vicinity of the substrate. The properties of thicker coatings are similar to those of the 100-nm-thick Al₂O₃ layer and differ significantly from the properties of the interfaces of Al₂O₃ thin layers.     

Anomalous temperature dependence of photoluminescence in GeO<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> films and GeO<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>/SiO<Subscript>2</Subscript> nano-heterostructures

The optical properties of GeO _x film and GeO _x /SiO₂ multilayer heterostructures (with thickness of GeO _x layers down to 1 nm) were studied with the use of Raman scattering and infrared spectroscopy, ellipsometry and photoluminescence spectroscopy including temperature dependence of photoluminescence. The observed photoluminescence is related to defect (dangling bonds) in GeO _x and interface defects for the case of GeO _x /SiO₂ multilayer heterostructures. From analysis of temperature dependence of photoluminescence intensity, it was found that rate of nonradiative transitions in GeO _x film has Berthelot type, but anomalous deviations from Berthelot type temperature dependence were observed in temperature dependences of photoluminescence intensities for GeO _x /SiO₂ multilayer heterostructures.     

Crystal structure and electronic states of Co and Gd ions in a Gd<Subscript>0.4</Subscript>Sr<Subscript>0.6</Subscript>CoO<Subscript>2.85</Subscript> single crystal

X-ray diffraction and X-ray absorption near edge structure (XANES) spectra have been measured at the Со K-edge and Gd L ₃-edge in GdCoO₃ and Gd_0.4Sr_0.6CoO_2.85 cobaltites. The effect of Sr substitution on the crystal structure and electronic and magnetic states of Co³⁺ ions in a Gd_0.4Sr_0.6CoO_2.85 single crystal has been analyzed. The XANES measurements at the Co K-edge have not showed a noticeable shift of the absorption edge with an increase in the concentration of Sr. This indicates that the effective valence of cobalt does not change. An increase in the intensity of absorption at the Gd L ₃-edge is due to an increase in the degree of hybridization of the Gd(5d) and O(2p) states. The effect of hole doping on the magnetic properties results in the appearance of the ferromagnetic component and in a significant increase in the magnetic moment.     

Low-temperature anomalies in the specific heat and thermal conductivity of MgB<Subscript>2</Subscript>

The temperature dependences of the specific heat C(T) and thermal conductivity K(T) of MgB₂ were measured at low temperatures and in the neighborhood of T _c . In addition to the well-known superconducting transition at T _c ≈40 K, this compound was found to exhibit anomalous behavior of both the specific heat and thermal conductivity at lower temperatures, T≈10–12 K. Note that the anomalous behavior of C(T) and K(T) is observed in the same temperature region where MgB₂ was found to undergo negative thermal expansion. All the observed low-temperature anomalies are assigned to the existence in MgB₂ of a second group of carriers and its transition to the superconducting state at T_c2≈10?12 K.