Ti不足对Na_（0.5）Bi_（4.5）Ti_（4-x）O_（15）陶瓷性能的影响

用传统固相烧结工艺制备致密Na0.5Bi4.5Ti4-xO15（x=0,0.02,0.04,0.06,0.08）系列铋层结构压电陶瓷,研究该系列陶瓷的微观结构、介电性质和压电性质。结果表明：少量Ti不足可以促进Na0.5Bi4.5Ti4O15陶瓷晶粒长大并使陶瓷的压电性能获得较大提高;随着x增大,陶瓷的压电常数和机电耦...     

WO3掺杂PMS—PNN—PZT压电陶瓷的压电性能的研究

用固相反应法制备了掺杂WO3的PMS—PNN—PZT压电陶瓷,研究了WO3对PMS—PNN—PZT陶瓷的相结构与压电性能的影响。WO3的加入促进了PMS—PNN—PZT压电陶瓷的烧结致密化。掺杂0．5wt％时,在1100℃下烧结具有最佳压电性能：d33=381pC·N^-1,Qm=1040,Kp=0．53,εr=1448,tanδ=0．0052。     

（1－x）Bi0．5（Na0．8K0．2）0．5TiO3－xKSbO3压电陶瓷的制备及性能研究

采用传统固相法制备了新型（1－x）Bi0．5（Na0．8K0．2）0．5TiO3－xKSbO3无铅压电陶瓷,利用XRD、 SEM等测试技术表征了该陶瓷的晶体结构、表面形貌、压电和介电性能。研究结果表明,在所研究的组成范围内陶瓷材料均能形成纯的钙钛矿固溶体。在室温下,当KSbO3的掺杂量为1％时,该体系表现出较好的介电性能：εr和tanδ分别为2231和0．055。     

(1-x)BaTiO3-xLiNbO3陶瓷的制备及性能研究

采用复合溶胶凝胶法制粉技术结合传统陶瓷制备工艺，制备了（1-x）BaTiO3-xLiNbO3陶瓷，并对其晶相特征、介电及压电、铁电性能进行了研究。在1250℃下烧结的陶瓷形成了单一相的钙钛矿结构固溶体，该固溶体在20-40℃之间存在二级相变，介电常数及介电损耗出现异常变化。陶瓷的铁电、压电性能随LiNbO3的加入得到显著提高。LiNbO3加入量为0．005mol的陶瓷压电常数d33为121pC／N，剩余极化强度为2．8μC／cm^2。     

烧结温度对PCrNi-4压电陶瓷性能的影响

采用传统固相烧结法制备Pb0.94Sr0.06（Zr0.53Ti0.47）O3＋（Ni2O3＋Cr2O3）0.1wt%＋x wt%CeO2（简称PCrNi-4）压电陶瓷,其中x取值为0,0.1,0.3和0.5,研究了烧结温度对陶瓷样品的相结构、显微结构、压电及介电性能。结果标明：所有样品相结构均为三方相与四方向共存。当烧结温度为1280℃,CeO2掺杂量为0.3 wt%时,陶瓷的晶粒大小均匀,致密性良好,具有良好的压电及介电性能（d33=375 pC/N,Kp=0.70115,εT33=1400,tgδ=0.00238）。     

LiTaO3压电陶瓷烧结工艺的优化

采用氮气保护热压烧结工艺制备LiTaO3压电陶瓷材料,研究了不同烧结方法和热压烧结压力对LiTaO3压电陶瓷致密度和力学性能的影响。无压烧结不能得到烧结致密的LiTaO3基压电陶瓷。1300℃/25MPa热压烧结制备的纯LiTaO3陶瓷的烧结致密度很低,只有91.5%,其各项力学性能很差。1300℃/35MPa热压烧结制备的纯LiTaO3陶瓷材料的致密度较高,已经达到了97%,材料烧结较致密,气孔较少,但由于LiTaO3本身性质所限其各项力学性能变化不大。     

La掺杂(Na0.5Bi0.5)0.82(K0.5Bi0.5)0.18TiO3系统无铅压电陶瓷的制备工艺探讨

采用传统陶瓷工艺，研究了制备[（Na0.5Bi0.5）0.82（K0.5Bi0.5）0.18]1-xLaxTiO3（x=0．00，0．01，0．03，0．05，0．10）无铅压电陶瓷的工艺条件对陶瓷的物相组成、显微结构和压电性能的影响。利用XRD、SEM等技术分析结果表明，合成温度的提高有利于主晶相的形成，且此系统烧成温度范围较窄，故需控制在合适的烧成温度下才能得到高致密度的陶瓷。同时，研究了极化工艺条件对材料压电性能的影响，结果表明，提高极化电场强度、控制适当的极化温度有利于提高材料的压电性能。     

（1–x）（K_（0.48）Na_（0.48）Li_（0.04））NbO_3–x（Na_（0.8）K_（0.2））_（0.5）Bi_（0.5）TiO_3无铅压电陶瓷的相变行为及其压电性能

采用固相法应法制备了（1–x）（K0.48Na0.48Li0.04）NbO3–x（Na0.8K0.2）0.5Bi0.5TiO3无铅压电陶瓷,研究了不同x（0,0.5%,1.0%,1.5%,2.0%,3.0%）对材料的相结构、介电性能以及压电性能的影响。结果表明：随着x增加,样品的Curie温度TC与正交到四方相变温度TO–T均逐渐降低,而压电常数d33与机电耦合系数kp均先升高后降低;该体系在0.5%     

（Na0.8K0.2）0.5Bi0.5TiO3-xSrTiO3-0．3％Mn无铅压电陶瓷的结构与性能

采用固相法制备了（Na1-xKx0.5）Bi0.5YiO3-xSrTiO3-0.3Mn系无铅压电陶瓷,研究了该系统的微观结构和压电性能。XRD分析表明所得陶瓷样品在室温下均为三方、四方共存的钙钛矿结构,随着Sr的增加,三方相减少,四方相增加。SEM图谱显示各样品颗粒均匀、具有规则的外形、晶界明显,并且少量Sr的加入使样品更加致密化。该体系样品具有优异的压电性能,在Sr含量为0．02时,压电常数如、平面机电耦合系数k,和厚度机电耦合系数kt同时达到最大值,分别为171pC·N^-1、33．1％和30．5％,Sr具有“软性”添加物的作用     

K0.5Na0.5NbO3-LiSbO3-BiFeO3无铅压电陶瓷的烧结特性

采用传统无压固相烧结法制备0.996(0.95K0.5NbO3-0.05LiSbO3)-0.004BiFeO3[0.996(0.95KNN-0.05LS)-0.004BF]无铅压电陶瓷,着重研究烧结保温时间对陶瓷结构、压电性能与介电性能和Curie温度Tc的影响.结果表明:随着烧结保温时间的延长,陶瓷趋于形成更稳定的四...     

Enhanced dielectric and energy-storage properties in ZnO-doped 0.9(0.94Na0.5Bi0.5TiO3−0.06BaTiO3)−0.1NaNbO3 ceramics

[0.9(0.94Na_0.5Bi_0.5TiO₃?0.06BaTiO₃)?0.1NaNbO₃]-xZnO (NBT-BT-NN-xZnO, x=0, 0.5 wt%, 1.0 wt%, 1.5 wt%, and 2.0 wt%) ferroelectric ceramics were fabricated using a conventional solid-state reaction method. The effects of ZnO content on dielectric, energy-storage and discharge properties were systematically investigated. Dielectric constant and difference between maximum and remanent polarization were significantly improved by ZnO doping. Dielectric constant of NBT-BT-NN-1.0-wt% ZnO was 3218 at 1 kHz and room temperature, i.e. one time bigger than that of pure NBT-BT-NN ceramic. As a consequence, a maximum energy-storage density of 1.27 J/cm³ with a corresponding efficiency of 67% was obtained in NBT-BT-NN-1.0-wt% ZnO ceramic. Moreover, its pulsed discharge energy density was 1.17 J/cm³, and 90% of which could be released in less than 300 ns. Therefore, ZnO doped NBT-BT-NN ceramic with a large energy-storage density and short release time could be a potential candidate for applications in high energy-storage capacitors.     

La1-x（Sr1-yKy）xMnO3的电输运性质及磁电阻的温度稳定性

用固相反应法制备La1–x（Sr1–yKy）xMnO3（x=0.2～0.1,y=0.0,0.2,0.4,0.6,0.8,1.0）系列样品,通过X射线衍射谱,电阻率–温度曲线,磁电阻–温度曲线,研究在A位同时掺入1价、2价元素而保持摩尔比n（Mn3＋）/n（Mn4＋）不变的La1–x（Sr1–yKy）xMnO3体系的电输...     

钴离子取代对Ca5Mg4–xCox(VO4)6陶瓷微波介电性能的影响

采用固相反应法制备低温烧结Ca₅Mg₄(VO₄)₆微波介质陶瓷,研究了Co掺杂取代Mg对微波介电性能的影响。结果表明:Co取代后样品形成了固溶体,导致烧结温度降低。当相对密度较低时,致密度主导着εr的变化;当相对密度较高时,εr主要受单位体积离子极化率的影响。此外,Co取代使得晶粒尺寸减小,进而促进了Q×f值的提升。由于τf与键能有着密切的联系,而V—O键的键能最大,τf随着V—O键键能的变化而改变。Ca5Mg4(VO₄)₆具有最佳的微波介电性能:εr=9.65,Q×f=54 685 GHz,τf=–55.3×10^–6℃^–1。     

Electronic structure and magnetic properties of Ba1-xSrxCoFe11O19 hexaferrites

We have prepared Ba_1-xSr_xCoFe₁₁O₁₉ hexaferrite nanoparticles (NPs) by using a co-precipitation method. The crystal/electronic structures and magnetic properties were then studied. Results revealed that all Ba_1-xSr_xCoFe₁₁O₁₉ NPs with particle sizes of 100–300?nm crystallized in a hexagonal structure. Both the particle shape and the unit-cell parameters are changed when Sr content (x) increases. The analysis of the electronic structure based on the Fe and Co K-edge XAS spectra proved the oxidation states of Fe and Co to be 3?+?and 2?+?, respectively, which are stable versus an x change in Ba_1-xSr_xCoFe₁₁O₁₉. Local-structural studies also revealed the average bond length between Fe and O of 1.89–1.91?Å less changed by Sr doping. Though the electronic structures of Fe and Co were unchanged, the studies about the magnetic property demonstrated a strong dependence of M_s and H_c on Sr doping. While M_s decreases from 46.1?emu/g for x?=?0–34.2?emu/g for x?=?1, H_c tends to increase from 1630?Oe for x?=?0 to ~ 2200?Oe for x?=?0.5, but slightly decreases to 2040?Oe for x?=?1. We think that the addition of the exchange interaction between Fe³⁺ and Co²⁺ ions and the changes of local-geometric structures and microstructures influenced directly M_s and H_c of NPs.     

Crystal structures and microwave dielectric properties of low-firing Ca5Zn4-xMgxV6O24 ceramics

Ca₅Zn_4-xMg_xV₆O₂₄ (x?=?0–3) microwave dielectric ceramics with low sintering temperature were synthesized via the conventional solid-state reaction. Effects of the substitution of Mg²⁺ for Zn²⁺ on crystal structures and microwave dielectric properties were investigated. XRD and Rietveld refinement showed the solid solution single phase formed when 0?≤?x?≤?2, but a few ZnO was observed when x?=?3. Meanwhile, the lattice parameters were found to decrease monotonously with Mg content increasing. The vibration modes of Raman were confirmed and the relationship with microwave dielectric properties was analyzed. Appropriate substitution of Mg²⁺ improved the packing fraction, the cation ordering degree, and the Y-site bond valence, contributing to high Q×f and low | τ_f |. However, the ε_r reduced with the increasing content of Mg²⁺ due to the decrease of ion polarizability. Finally, the best microwave dielectric properties were achieved at x?=?2 with ε_r =?11.0, Q?×?f?=?66,365?GHz (at 10.0?GHz), and τ_f =??80.4?ppm/°C.     

Formation mechanism of elongated β–Si3N4 crystals in Fe–Si3N4 composite via flash combustion

Elongated β–Si₃N₄ crystals have a significant influence on the mechanical property of Fe–Si₃N₄ composite. In this paper, the formation mechanism of elongated β–Si₃N₄ crystals in Fe–Si₃N₄ composite was investigated. During the preparation process, β–Si₃N₄ crystals developed in a spiral and layer growth mechanism in the dense areas. They kept growing from the dense areas and formed radially distributed elongated crystals with hexagonal prismatic morphology as time went on. As for the formation mechanism, the (100) crystal plane of β–Si₃N₄ from Si-N-O melt is mainly the vicinal crystal planes growth with different angles from the (100) crystal plane. At the later stage, the crystallization and the diffusion forces in Si-N-O molten phase decreased. However, the short range diffusion remained active and resulted in the gradient distribution of N content near the boundary. With the temperature decreasing, the disappearance of the short range diffusion implied the end of the crystallization process of the elongated β–Si₃N₄ crystals.     

V2O5-WO3-MoO3/TiO2催化剂用于NH3选择性还原减排NOx的性能（英文）

The V2O5-WO3-MoO3/TiO2 honeycomb catalyst was prepared with industrial grade chemicals. The structural and physico-chemical properties were analyzed with X-ray diffraction (XRD), scanning electron micrograph (SEM) and mercury porosimetry. The NOx conversion and durability were investigated on a pilot plant test set under the actual operational conditions of a coal fired boiler. The catalyst monolith had good formability with mass percentage of V:W:Mo:TiO2 :fiber glass= 1:4.5:4.5:72:18. Vanadium, tungsten and molybdenum species were highly dispersed on anatase TiO2 without causing the transformation of anatase TiO2 to rutile by calcining under a current of air at 450℃ for 4.5 h, but there were some degrees of crystal distortion. The catalyst particle sizes were almost uniform with close pile-up and the pore structure was regular with complete macro-pore formation and large specific surface area. The NOx conversion was sensitive to temperature but nearly insensitive to NH3 . The catalyst showed strong adaptability to NOx concentration with activity above 80% in the range of 615-1640 mg·m-3 . Within the range of 720-8640 h continuous operation, the NOx conversion dropped at a rate of about 1% reduction per 600 h.     

Tailoring structural and electrical properties of A-site nonstoichiometric Na0.5Bi0.5(Ti0.97Ni0.03)O3 ferroelectric films deposited on LaNiO3(100)/Si substrate

Highly (l00)-oriented Ni-doped Na_0.5Bi_0.5TiO₃ (NBTNi) thin films with different A-site cation nonstoichiometry were deposited on the LaNiO₃ (100)/Si substrates. We find that low levels of Na/Bi nonstoichiometry in the original composition of NBTNi films have obvious influence on the crystal structure and ferro-/dielectric properties. Na deficiency or Bi excess can lower the leakage current compared to the stoichiometric sample due to the decreased oxide-site vacancies. However, the mechanisms for the two types of films are different. That is, the mobile oxygen vacancies are tied by the Na vacancies in Na deficiency film whereas the formation of oxygen vacancies is suppressed for Bi-rich film. A good combination of ferroelectric property (P_r = 22.7?μC/cm²) and dielectric property (ε_r = 360 and tan?δ?=?0.11) can be achieved in Bi-rich NBTNi (Na_0.5Bi_0.54TNi) film. Besides, the effect of voltage and frequency on the capacitance and dielectric tunability for the Na_0.5Bi_0.54TNi film is investigated solely. These results show that NBT-based thin film is quite flexible in A-site nonstoichiometry, which provides a broad space for performance improvement.     

The role of Eu2O3 and CeO2 on the phase formation,infrared emission and magnetic properties of Co0.6Zn0.4Fe2O4 ceramics by a solvothermal method

Nanosized Eu₂O₃ and CeO₂ co-addition CoZn ceramics have been achieved via a hydrothermal method by adjusting the mol ratios of Eu and Ce. The as-prepared samples were characterized by X-ray diffraction (XRD), Transmission electron microscopy (TEM), Fourier transform infrared (FTIR), Vibrating sample magnetometer (VSM) and Infrared emission measurement (IRE-2). The particle morphologies of the as-prepared samples evolve from spherical, to self-assembled nanoparticles, and irregular nanoparticles when the mol ratios (x) of Eu and Ce was changed from 0:10 to 10:0. Correspondingly, the main phases of the as-prepared samples change from both cubic spinel CoFe₂O₄ and CeO₂, pure cubic cerianite CeO₂, to amorphous. Meanwhile, the as-prepared samples appear transformed from a ferromagnetic behavior with a saturation magnetization 66.4 emu/g to a paramagnetic behavior with a saturation magnetization of 0.55 emu/g at turning point x=3.5:6.5. While the infrared emissivity is increasing as the x from 0:10 to 3.5:6.5, reach the maximum at 3.6:6.4, and then remain stable when further increasing x till 10:0. Those may be due to the amorphous tendency rising and the particle sizes gradual decreasing with x increasing from 0:10 to 10:0. What is more important is that the solvothermal method is proved to be an efficient way to prepare CoZn nano-ceramics in this study which may open new pathways to magnetic and far infrared therapy.     

Metal-organic chemical liquid deposited (1 1 0)-preferred LaNiO3 buffer layer for Pb0.97La0.02(Zr0.85Sn0.13Ti0.02)O3 antiferroelectric films

Conductive perovskite lanthanum nickelate LaNiO₃ (LNO) thin films were fabricated on SiO₂/Si substrates through metal-organic chemical liquid deposition method. The effect of annealing temperature on the orientation and sheet resistance of the LNO films were investigated. XRD patterns showed that the LNO films deposited on SiO₂/Si substrates exhibited preferred-(1 1 0) orientation. The lowest sheet resistance of the LNO thin films, 250 Ω/□ was obtained after being annealed at 650 °C for 1 h. Subsequently, Pb_0.97La_0.02(Zr_0.85Sn_0.13Ti_0.02)O₃ (PLZST) antiferroelectric thin films were prepared on the LaNiO₃ buffered SiO₂/Si substrates via sol–gel process. And the crystallinity, microstructure and electric properties of the PLZST thin films were studied in details.