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本文利用微区薄层电阻测试的一种斜置四探针新方法,将扩散微区薄层电阻测试结果绘成全乍的灰度图,这种微区薄层电阻测试Mapping技术十分有利于评价材料的质量。在测试过程中应用微处理器,可立即数字显示相应的测量电压及微区的薄层电阻,加快了计算速度并有利于控制探针的合适位置。 相似文献
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文章对国内外开展微区薄层电阻测试的方法进行了综述,特别对改进范德堡四探针技术方法的测试原理、测试过程与测试结果进行了论述与分析,对微区电阻测试方法的进一步发展提出了一种可操作的方法,并研制出新型四探针测试样机。 相似文献
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微处理器在微区薄层电阻测试Mapping技术中的应用 总被引:2,自引:0,他引:2
利用微区薄层电阻测试的一种斜置四探针新方法,将扩散微区薄层电阻测试结果绘成全片的灰度图,这种Mapping技术十分有利于评价材料的质量,在测试过程中应生处理器,可立即数字显示相应的测量电压及微区的薄层电阻,加快计算速度并有利于控制探针的合适位置。 相似文献
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提出了一种基于统计反演重建电阻率分布图像的硅片电阻率测试方法,该方法采用马尔科夫链蒙特卡洛(MCMC)方法求解电阻抗成像技术(EIT)的逆问题,可以避免确定性方法中迭代误差和分辨率低的问题。建立了一种基于MCMC方法的电阻率分布图像重建算法,搭建了电压数据采集系统以测量边缘电压。对比MCMC算法重建的硅片微区电阻率分布图像与4D-333A测试仪的测量结果,二者的电阻率分布情况呈现出相同的分布趋势。将采用MCMC算法得出的256个单元的数值与采用其他重建方法得出的数值、真实的电阻率进行对比,发现MCMC算法得到的数值与真实数值最接近的单元数最多,为88个,比其他重建方法更为准确。 相似文献
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微区薄层电阻四探针测试仪及其应用 总被引:12,自引:0,他引:12
用斜置的四探针方法 ,依靠显微镜观察 ,将针尖置于微区图形的四个角区 ,用改进的范德堡公式可以得到微区的薄层电阻。文中对测准条件作了分析。并用该仪器测定了硼扩散片的薄层电阻分布。在测试过程中应用微处理器 ,加快了计算速度 相似文献
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P. G. Muzykov Y. I. Khlebnikov S. V. Regula Y. Gao T. S. Sudarshan 《Journal of Electronic Materials》2003,32(6):505-510
To establish fast, nondestructive, and inexpensive methods for resistivity measurements of SiC wafers, different resistivity-measurement
techniques were tested for characterization of semi-insulating SiC wafers, namely, the four-point probe method with removable
graphite contacts, the van der Pauw method with annealed metal and diffused contacts, the current-voltage (I-V) technique,
and the contactless resistivity-measurement method. Comparison of different techniques is presented. The resistivity values
of the semi-insulating SiC wafer measured using different techniques agree fairly well. As a result, application of removable
graphite contacts is proposed for fast and nondestructive resistivity measurement of SiC wafers using the four-point probe
method. High-temperature van der Pauw and room-temperature Hall characterization for the tested semi-insulating SiC wafer
was also obtained and reported in this work. 相似文献
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It is found that the standard four-point probe resistivity measurement and stripping technique used for measuring impurity profile in diffused semiconductor layers can provide reliable information only if certain limitations are carefully observed. To get the actual surface concentration for profiling, it has been found necessary to predetermine the appropriate range of current and voltage. Approximate ranges for studying phosphorus and boron in silicon are reported in this paper. The phosphorus profile obtained by this technique by successive measurement of sheet resistivity after anodic oxidation and stripping distinctly shows a kink and tail structure obtained without annealing. 相似文献
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利用直流磁控溅射法在有ZnO:Zr缓冲层的水冷玻璃衬底上成功制备出了ZnO:Zr透明导电薄膜,缓冲层的厚度介于35~208 nm.利用XRD、SEM、四探针测试仪和紫外-可见分光光度计研究ZnO:Zr薄膜的结构、形貌、电光性能.结果表明,薄膜的颗粒尺寸和电阻率对缓冲层厚度具有较强的依赖性.当缓冲层厚度从35 nm增加到103 nm时,薄膜的颗粒尺寸增大,电阻率减小.而当缓冲层厚度从103 nm增加到208 nm时,薄膜的颗粒尺寸减小,电阻率增大.当缓冲厚度为103 nm时,薄膜的电阻率最小为2.96×10-3 Ω·cm,远小于没有缓冲层时的12.9×10-3 Ω·cm.实验结果表明,在沉积薄膜之前先沉积一层适当的缓冲层是提高ZnO:Zr薄膜质量的一种有效方法. 相似文献
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The objective of this paper is to investigate thin, solid, prestressed ceramic films as a means of enhancing the reliability of silicon semiconductor wafers stressed in bending. To characterize the effect of thin films on strength, one-micrometer ceramic films were deposited on wafers using plasma-enhanced chemical-vapor deposition. The modulus of rupture (MOR) of the coated wafers was determined from four-point bend testing of coated samples. Adhesion testing of the coated wafers primarily showed cohesive rather than adhesive failure. A series of residual stresses was introduced into the coating-silicon interface and the MOR was determined. The results showed that for a thin brittle coating (1 mum) on a silicon wafer (635 mum), the minimal shear stress at the surface led to dominance of the residual stress over intrinsic coating strength as the critical parameter affecting failure. A correlation between MOR and residual stress was established. 相似文献
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P. Tiwari X. D. Wu S. R. Foltyn I. H. Campbell Q. X. Jia R. E. Muenchausen D. E. Peterson T. E. Mitchell 《Journal of Electronic Materials》1996,25(1):51-55
Highly crystalline SrRuO3 (SRO) and La0.5Sr0.5CoO3 (LSCO) thin films were deposited on (100) Pt/ MgO by pulsed laser deposition. The films were mainly (001) textured normal
to the substrate surface with a high degree of in-plane orientation with respect to the substrate’s major axes. These films
were characterized using x-ray diffraction, Rutherford backscattering, four-point probe resistivity measurement, and transmission
electron microscopy. The room temperature resistivity for LSCO and SRO films on Pt/MgO was found to be ∼35 and ∼40 μΩ-cm,
respectively. An ion beam minimum channeling yield of ∼43% and ∼33% was obtained for LSCO and SRO films, respectively. The
interface between Pt and oxide was found to be smooth and free from any interfacial diffusion. This result showed that high-quality
low resistivity oxide thin films can be deposited on Pt. 相似文献
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基底温度对直流磁控溅射ITO透明导电薄膜性能的影响 总被引:1,自引:0,他引:1
用直流磁控溅射法制备透明导电锡掺杂氧化铟(ITO)薄膜,靶材为ITO陶瓷靶,组分为m(In2O3):m(SnO2)=9:1.运用分光光度计,四探针测试仪研究了基底温度对薄膜透过率、电阻率的影响,并用X射线衍射(XRD)仪对薄膜进行结构分析.计算了晶面间距和晶粒尺寸,分析了薄膜的力学性质.实验结果表明,在实验设备条件下,直流磁控溅射ITO陶瓷靶制备ITO薄膜时,适当的基底温度(200℃)能在保证薄膜85%以上高可见光透过率下,获得最低的电阻率,即基底温度有个最佳值.薄膜的结晶度随着基底温度的提高而提高. 相似文献
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Copper thin films with high conductivity and good resistance to electromigration can be used in advanced electronic devices.
However, the poor corrosion resistance of copper must be overcome. This work elucidates the possibility of using a self-forming
passivation layer to prevent copper oxidation in lightly indium-doped copper thin films deposited directly on glass substrates
and annealed under various oxygen atmospheres. The resistivity of the studied film declined gradually as the film was annealed
at an elevated temperature because of the grain growth of the Cu film and the precipitation of indium from the In-doped Cu
thin film, as revealed by X-ray diffraction, four-point probe measurements, and transmission electron microscopy. A copper
film with high indium content exhibited superior passivation when the film was annealed in an oxygen-rich ambient, but it
exhibited high resistivity because of its high indium content. The electrical and passivation properties demonstrated that
indium is a promising alloying element for use in copper films for future metallization structures and thin-film transistors. 相似文献