Series Solution for Localization and Entanglement of an Exciton in a Quantum Dot Molecule by an ac Electric Field

The Schrödinger equation involving the phenomenon of the localization and entanglement for an exciton in a quantum dot molecule by an ac electric field is analytically investigated. New exact series solutions for the Schrödinger equation have been obtained for the first time. The analytical expressions can further describe the dynamical behaviors of an interacting electron-hole pair in a double coupled quantum dot molecule under an ac electric field accurately.     

Radiative life time of an exciton confined in a strained GaN/Ga1-xAlxN cylindrical dot: built-in electric field effects

The binding energy of an exciton in a wurtzite GaN/GaAlN strained cylindrical quantum dot is investigated theoretically.The strong built-in electric field due to the spontaneous and piezoelectric polarizations of a GaN/GaAlN quantum dot is included.Numerical calculations are performed using a variational procedure within the single band effective mass approximation.Valence-band anisotropy is included in our theoretical model by using different hole masses in different spatial directions.The exciton oscillator strength and the exciton lifetime for radiative recombination each as a function of dot radius have been computed.The result elucidates that the strong built-in electric field influences the oscillator strength and the recombination life time of the exciton.It is observed that the ground state exciton binding energy and the interband emission energy increase when the cylindrical quantum dot height or radius is decreased,and that the exciton binding energy,the oscillator strength and the radiative lifetime each as a function of structural parameters (height and radius) sensitively depend on the strong built-in electric field.The obtained results are useful for the design of some opto-photoelectronic devices.     

Effect of external noise on the dynamical localization of two coupling electrons in quantum dot array

The effect of external noise, which is characterized by an Ornstein--Uhlenbeck process, on the dynamical localization of two coupling electrons in a quantum dot array under the action of an ac electric field is studied. A numerical solution of the stochastic equations is obtained by averaging over stochastic trajectories. The results show that the external noise may destroy the dynamical localization, but the anti-noise capacity of the system is stronger when the two electrons are localized at the ends of the quantum dot array.     

Electric field induced exciton binding energy and its non-linear optical properties in a narrow InSb/InGaxSb1−x quantum dot

The effect of electric field on the binding energy, interband emission energy and the non-linear optical properties of exciton as a function of dot radius in an InSb/InGa_xSb_1?x quantum dot are investigated. Numerical calculations are carried out using single band effective mass approximation variationally to compute the exciton binding energy and optical properties are obtained using the compact density matrix approach. The dependence of the nonlinear optical processes on the dot sizes is investigated for various electric field strength. The linear, third order non-linear optical absorption coefficients, susceptibility values and the refractive index changes of electric field induced exciton as a function of photon energy are obtained. It is found that electric field and the geometrical confinement have great influence on the optical properties of dots.     

Stark shift and dissociation process of an ionized donor bound exciton in spherical quantum dots

The effect of an electric field on the ground state energy of an exciton bound to an ionized donor (D⁺, X) was studied in CdSe spherical quantum dots where quantum confinement is described by an infinitly deep potential. Calculations have been performed in the framework of the effective mass approximation using a variational method by choosing an appropriate sixty-terms wave function taking into account different interparticles correlations and symetry distorsion induced by the electric field. It appears that the Stark shift is significant even for low fields and depends strongly of spherical dot sizes. The competition between the confinement effect and the Stark effect is discussed as function of the spherical dot size and the applied electric field strength. The (D⁺, X) Stark shift is estimated and its behavior is discussed as a function of the dot radius and electric field strength. The electron and hole average distances have also been calculated and the role of the ionized donor in the excitonic dissociation is established.     

有机高分子链内的场致激子解离

基于SSH(Su-Schrieffer-Heeger)模型,采用静态及动力学自洽算法模拟了有机高分子链内激子在光激发及外电场作用下的形成与解离过程。结果表明,受光激发后,有机高分子链内激子的生成与解离密切依赖于施加外电场的时机,当外电场与光激发同时发生时,激子能否生成完全取决于电场强度的大小;而当外电场在光激发后的一段时间(通常为皮秒量级)之后被引入,则在有机高分子链内能够形成稳定的激子,且该激子只有在强外电场(超过1MV/cm)的作用下,才会发生解离,临界场强量级与实验结果相符合。     

External electric field effect on the optical rectification coefficient of an exciton in a spherical parabolic quantum dot

External electric field effects on the optical rectification coefficient of an exciton confined in a spherical parabolic quantum dot are theoretically investigated. To this end, energy eigenvalues and eigenfunctions of the system are calculated, using the direct matrix diagonalization method. The compact-density matrix approach and an iterative method are used to find the optical rectification coefficient of a typical GaAs parabolic quantum dot. The results show that the optical rectification coefficient strongly depends on the confinement frequency and the magnitude of the electric field. Moreover, the peak value of this optical quantity is shifted to the aspect of high energy when the influence of the electric field is considered.     

Analytical Ground-State of an Exciton Trapped in a Circular Parabolic Quantum Dot in the Presence of a Magnetic Field

The quasi-exact properties of an exciton are investigated theoretically in the presence of an external magnetic field using the effective-mass approach in GaAs parabolic quantum dot. The energy spectrum is obtained analytically as a function of the dot radius, interaction strength and magnetic field. It is established that, a steady bound state of an exciton in the ground state exists under the effect of a strong magnetic field; also I noticed that the exciton binding energy decreases by increasing both the radius of the dot and the magnetic field strength and the reduction becomes pronounced for larger dots. As expected, it has been found that the exciton total energy decreases with increasing the size of the dot and it enhances by increasing the magnetic field. It appears that the exciton total energy strongly depends on the magnetic field for dots with big size. The magnetic field effect on the exciton size also has been studied. It is shown that the increase in the magnetic field leads to a reduction in the exciton size; due to magnetic field confinement, while the size of an exciton reach its bulk limit as the dot size increases. Moreover, it is shown that, if the dot radius is sufficiently large the oscillator strength saturates and it becomes insensitive to the magnetic field while the increase in the magnetic field gradually weakened the oscillator strength. I have calculated the ground-state distribution for both the electron and the hole. It is found that the localization of the electron/hole increases in the presence of a magnetic field. Moreover, the ground-state optical-absorption intensity is investigated. Finally, the dependence of the lowest five states of an exciton on both the dot radius and the magnetic field are discussed.

     

交变电场驱动下三量子点中双电子的动力学

采用三点哈巴德模型及弗洛盖定理．研究了交变电场驱动下线形三量子点分子中双电子的动力学行为。由于系统哈密顿量中不包含自旋反转项,所以系统单态和三重态子空间是完全解耦的,可以分开进行讨论。研究表明,自旋三重态九维子空间还可以进一步分解成三个不相耦合的子空间,在每一个子空间中,动力学行为与交变电场驱动的双量子点中双电子的动力学行为相似。对自旋单态6维子空间,数值计算还表明,在合适的外加交变电场驱动下,电子在量子点之间的隧穿被抑制．初始局域在一个量子点中的两个电子能够在一定时间内保持其局域状态。     

Electric field induced nonlinear optical properties of a confined exciton in a ZnO/Zn1−xMgxO strained quantum dot

Electric field induced exciton binding energy as a function of dot radius in a ZnO/Zn_1−xMg_xO quantum dot is investigated. The interband emission as a function of dot radius is obtained in the presence of electric field strength. The Stark effect on the exciton as a function of the dot radius is discussed. The effects of strain, including the hydrostatic and the biaxial strain and the internal electric field, induced by spontaneous and piezoelectric polarization are taken into consideration in all the calculations. Numerical calculations are performed using variational procedure within the single band effective mass approximation. Some nonlinear optical properties are investigated for various electric field strengths in a ZnO/Zn_1−xMg_xO quantum dot taking into account the strain-induced piezoelectric effects. Our results show that the nonlinear optical properties strongly depend on the effects of electric field strength and the geometrical confinement.     

Electric field effects on optical properties in zinc-blende InGaN/GaN quantum dot

The effect of electric field on exciton states and optical properties in zinc-blende (ZB) InGaN/GaN quantum dot (QD) are investigated theoretically in the framework of effective-mass envelop function theory. Numerical results show that the electric field leads to a remarkable reduction of the ground-state exciton binding energy, interband transition energy, oscillator strength and linear optical susceptibility in InGaN/GaN QD. It is also found that the electric field effects on exciton states and optical properties are much more obvious in QD with large size. Moreover, the ground-state exciton binding energy and oscillator strength are more sensitive to the variation of indium composition in InGaN/GaN QD with small indium composition. Some numerical results are in agreement with the experimental measurements.     

The donor bound exciton states in wurtzite GaN quantum dot

Based on the effective mass approximation, the donor bound exciton states in a wurtzite (WZ) GaN/AlGaN quantum dot (QD) are investigated by means of a variational method, including the strong built-in electric field effect due to the spontaneous and piezoelectric polarizations. Numerical results show that the donor bound exciton binding energy is highly dependent on the impurity position and QD size. In particular, we find that the donor bound exciton binding energy is insensitive to dot height when the impurity is located at the right boundary of the WZ GaN/AlGaN QD with large dot height.     

Exciton states and interband optical transitions in wurtzite InGaN/GaN quantum dot nanowire heterostructures

Within the framework of the effective-mass approximation, the exciton states and interband optical transitions in In_xGa_1−xN/GaN strained quantum dot (QD) nanowire heterostructures are investigated using a variational method, in which the important built-in electric field (BEF) effects, dielectric-constant mismatch and three-dimensional confinement of the electron and hole in In_xGa_1−xN QDs are considered. We find that the strong BEF gives rise to an obvious reduction of the effective band gap of QDs and leads to a remarkable electron-hole spatial separation. The BEF, QD height and radius, and dielectric mismatch effects have a significant influence on exciton binding energy, electron interband optical transitions, and the exciton oscillator strength.     

Optical absorptions of an exciton in a disc-like quantum dot under an electric field

An exciton in a disc-like quantum dot (QD) with the parabolic confinement, under applied electric field, is studied within the framework of the effective-mass approximation. Both the electric field and the confinement effects on the transition energy and the oscillator strength were investigated. Based on the computed energies and wave functions, the linear, the third-order nonlinear and the total optical absorption coefficients were also calculated. We found that the optical absorption coefficients with considering excitonic effects are stronger than those without considering excitonic effects and the absorption peak will move to the right side induced by the electron-hole interaction, which shows an excitonic effect blue-shift of the resonance in QDs. The applied electric field may affect either the size or the position of absorption peaks of excitons. However, the applied electric field may only affect the size of absorption peaks of an electron-hole pair without considering excitonic effects. It is very important to take excitonic effects into account when we study the optical absorption for disc-like QDs. We may observe the excitonic effect induced by the external electric field.     

Optical properties of exciton confinement in wurtzite ZnO/MgxZn1−xO coupled quantum dots

Based on the framework of effective-mass approximation and variational approach, optical properties of exciton are investigated theoretically in ZnO/Mg_xZn_1−xO vertically coupled quantum dots (QDs), with considering the three-dimensional confinement of electron and hole pair and the strong built-in electric field effects due to the piezoelectricity and spontaneous polarization. The exciton binding energy, the emission wavelength and the oscillator strength as functions of the different structural parameters (the dot height and the barrier thickness between the coupled wurtzite ZnO QDs) are calculated with the built-in electric field in detail. The results elucidate that structural parameters have a significant influence on the exciton state and optical properties of ZnO coupled QDs. These results show the optical and electronic properties of the quantum dot that can be controlled and also tuned through the nanoparticle size variation.     

Efficient unstationary holographic recording in photorefractive crystals under an external alternating electric field

The theoretical analysis of unstationary holographic recording in photorefractive crystals under an external alternating electric field is presented. In particular, a step-like ac field resulting in a shifted phase hologram with an amplitude exceeding that of a hologram recorded under an external dc field is shown to be most efficient. The experimental curves for the gain factor Γ obtained in Bi₁₂TiO₂₀ (λ = 0.63μm) under an ac step-like field illustrate the field and spatial frequency dependencies of the hologram amplitude characteristics of the unstationary mechanisms of holographic recording.     

Combined effects of hydrostatic pressure and temperature on nonlinear properties of an exciton in a spherical quantum dot under the applied electric field

Within the framework of the effective-mass approximation, we have calculated the combined effects of hydrostatic pressure, temperature and applied electric field on an exciton confined in a typical GaAs/Ga_0.7Al_0.3As quantum dot. Several inputs of the confinement potential, hydrostatic pressure, temperature, and applied electric field have been considered. Our findings suggest that (1) the effect of the confinement strength is dominant over the electric field effect, (2) the oscillator strength is an increasing function of the hydrostatic pressure, (3) the absorption coefficients and energy difference depend strongly on the hydrostatic pressure but weakly on the temperature, (4) the absorption coefficients with considering excitonic effects are stronger than those without considering excitonic effects and the absorption peak will move to the right side induced by the electron-hole interaction, (5) the applied electric field may effect either the size or the position of absorption peaks of excitons.     

交变电场驱动下耦合双量子点中激子的动力学行为

利用两点Hubbard模型和Floquet定理，研究了交变电场驱动下耦合双量子点中激子的动力学行为.计算结果表明，系统准能级随交变电场振幅的变化出现一系列严格交叉和回避交叉.在最低的两个准能级的第一个严格交叉点处，初始局域状态一般能够保持，并且随着点内的电子空穴之间库仑相互作用的增强，动态局域化的程度会提高.在最低的两个准能级的第二和第三个严格交叉点处，随着交变电场的增强，这种动态局域化被破坏.在偏离准能严格交叉点和回避交叉点，则不能存在动态局域化现象. 关键词： Floquet态 准能 局域态     

Anisotropic exciton Stark shift in hemispherical quantum dots

The exciton Stark shift and polarization in hemispherical quantum dots(HQDs) each as a function of strength and orientation of applied electric field are theoretically investigated by an exact diagonalization method. A highly anisotropic Stark redshift of exciton energy is found. As the electric field is rotated from Voigt to Faraday geometry, the redshift of exciton energy monotonically decreases. This is because the asymmetric geometric shape of the hemispherical quantum dot restrains the displacement of the wave function to the higher orbital state in response to electric field along Faraday geometry. A redshift of hole energy is found all the time while a transition of electron energy from this redshift to a blueshift is found as the field is rotated from Voigt to Faraday geometry. Taking advantage of the diminishing of Stark effect along Faraday geometry, the hemispherical shapes can be used to improve significantly the radiative recombination efficiency of the polar optoelectronic devices if the strong internal polarized electric field is along Faraday geometry.     

Optical absorption and refraction index change of a confined exciton in a spherical quantum dot nanostructure

Electronic energies of an exciton confined in a strained Zn_1−x Cd _x Se/ZnSe quantum dot have been computed as a function of dot radius with various Cd content. Calculations have been performed using Bessel function as an orthonormal basis for different confinement potentials of barrier height considering the internal electric field induced by the spontaneous and piezoelectric polarizations. The optical absorption coefficients and the refractive index changes between the ground state (L = 0) and the first excited state (L = 1) are investigated. It is found that the optical properties in the strained ZnCdSe/ZnSe quantum dot are strongly affected by the confinement potentials and the dot radii. The intensity of the total absorption spectra increases for the transition between higher levels. The obtained optical nonlinearity brings out the fact that it should be considered in calculating the optical properties in low dimensional semiconductors especially in quantum dots.