evelopment of two-port surface acoustic wave resonator with A1/Au electrodes for gas sensing

Simple and efficient surface acoustic wave （SAW） two-port resonators with low insertion loss and high Q-values on ST-X quartz substrate using a corrosion-proof A1/Au-stripe electrode structure are developed for gas sensing. It was composed of two shorted grating reflectors and adjacent intedigital transducers （IDT）, and an active metal film in the cavity between the IDTs for the sensitive film coating. The devices are expected to provide good protection towards metal electrode for gas sensors application in chemically reactive environments. Excellent device performance as low insertion loss, high Q factor and single-mode are achieved by carefully selecting the metallic electrode thickness, cavity length and acoustic aperture. Prior to fabrication, the coupling of modes （COM） model was performed for device simulation to determine the optimal design parameters. The fabricated single-mode SAW resonator at operation frequency of 300 MHz range exhibits matched insertion loss of ~6.5 dB and loaded Q factor in the 3000 range. Using the fabricated resonator as the feedback element, a duaresonator-oscillator with excellent frequency stability （0.1 ppm） was developed and evaluated experimentally, and it is significant for performance improvement of SAW gas sensor.     

Fabrication of 160-nm T-gate metamorphic AlInAs/GaInAs HEMTs on GaAs substrates by metal organic chemical vapour deposition

The fabrication and performance of 160-nm gate-length metamorphic AlInAs/GaInAs high electron mobility tran-sistors (mHEMTs) grown on GaAs substrate by metal organic chemical vapour deposition (MOCVD) are reported. By using a novel combined optical and e-beam photolithography technology, submicron mHEMTs devices have been achieved. The devices exhibit good DC and RF performance. The maximum current density was 817 mA/mm and the maximum transconductance was 828 mS/mm. The non-alloyed Ohmic contact resistance Rc was as low as 0.02 Ω- mm. The unity current gain cut-off frequency (fT) and the maximum oscillation frequency (fmax) were 146 GHz and 189 GHz, respectively. This device has the highest fT yet reported for a 160-nm gate-length HEMTs grown by MOCVD. The output conductance is 28.9 mS/mm, which results in a large voltage gain of 28.6. Also, an input capacitance to gate-drain feedback capacitance ratio, Cgs/Cgd, of 4.3 is obtained in the device.     

A synthetic optically pumped gradiometer for magnetocardiography measurements

Magnetocardiography(MCG)measurement is important for investigating the cardiac biological activities.Traditionally,the extremely weak MCG signal was detected by using superconducting quantum interference devices(SQUIDs).As a room-temperature magnetic-field sensor,optically pumped magnetometer(OPM)has shown to have comparable sensitivity to that of SQUIDs,which is very suitable for biomagnetic measurements.In this paper,a synthetic gradiometer was constructed by using two OPMs under spin-exchange relaxation-free(SERF)conditions within a moderate magnetically shielded room(MSR).The magnetic noise of the OPM was measured to less than 70 fT/Hz1/2.Under a baseline of 100 mm,noise cancellation of about 30 dB was achieved.MCG was successfully measured with a signal to noise ratio(SNR)of about 37 dB.The synthetic gradiometer technique was very effective to suppress the residual environmental fields,demonstrating the OPM gradiometer technique for highly cost-effective biomagnetic measurements.     

Preparation and modification of VO_2 thin film on R-sapphire substrate by rapid thermal process

The VO2 thin film with high performance of metal-insulator transition （MIT） is prepared on R-sapphire substrate for the first time by magnetron sputtering with rapid thermal process （RTP）. The electrical characteristic and THz transmittance of MIT in VO2 film are studied by four-point probe method and THz time domain spectrum （THz-TDS）. X-ray diffraction （XRD）, X-ray photoelectron spectroscopy （XPS）, atomic force microscopy （AFM）, and search engine marketing （SEM） are employed to analyze the crystalline structure, valence state, surface morphology of the film. Results indicate that the properties of VO2 film which is oxidized from the metal vanadium film in oxygen atmosphere are improved with a follow- up RTP modification in nitrogen atmosphere. The crystallization and components of VO2 film are improved and the film becomes compact and uniform. A better phase transition performance is shown that the resistance changes nearly 3 orders of magnitude with a 2-~C hysteresis width and the THz transmittances are reduced by 64% and 60% in thermal and optical excitation respectively.     

Thickness Determination for a Two-Layered Composite of a Film and a Plate by Low-Frequency Ultrasound

We present an ultrasonic method for determining the thickness of a composite consisting of a soft thin film attached to a hard plate substrate, by resonance spectra in the low frequency region, The interrogating waves can be incident only to the two-layered composite from the substrate side. The reflection spectra are obtained by FFT analysis of the compressive pulsed echoes from the composite, and the thicknesses of the film and the substrate are simultaneously inversed by the simulated annealing method from the resonant frequencies knowing other acoustical parameters in prior. The sensitivity of the method to individual thickness, its convergence and stability against experimental noises are studied, Experiment with interrogating wavelength 4 times larger than the film thickness in a sample of a polymer film （0.054mm） on an aluminium plate （6.24mm） verifies the validity of the method. The average relative errors in the measurement of the thicknesses of the film and the substrate are found to be -4.1% and -0.62%, respectively.     

Efficient Scheme for Entanglement and Quantum Information Processing with Two Superconducting Quantum-Interference Devices in Cavity QED

In this paper, a scheme is proposed to create the entanglement of two superconducting quantum-interference devices （SQUIDs） and implement a two-quhit quantum phase gate between two SQUIDs in cavity. The scheme only requires resonant interactions. Thus the scheme is very simple and the quantum dynamics operation can he realized at a high speed, which is important in view of decoherence.     

Flexible white top-emitting organic light-emitting diode with a MoO_x roughness improvement layer

In this paper, an MoOx film is deposited on a polyethylene terephthalate （PET） substrate as a buffer layer to improve the surface roughness of the flexible PET substrate. With an optimized MoOx thickness of 100 nm, the surface roughness of the PET substrate can be reduced to a very small value of 0.273 nm （much less than 0.585 nm of the pure PET）. Flexible white top-emitting organic light-emitting diodes （TEOLEDs） with red and blue dual phosphorescent emitting layers are constructed based on a low-reflectivity Sm/Ag semi-transparent cathode. The flexible white emission exhibits the best luminance and current injection characteristics with the 100-nm-thick MoOx buffer layer and this result indicates that a smooth substrate is beneficial to the enhancement of device electrical and electroluminescence performances. However, the white TEOLED with a 50-nm-thick MoOx buffer layer exhibits a maximum current efficiency of 4.64 cd/A and a power efficiency of 1.9 lm/W, slightly higher than those with a 100-nm MoOx buffer layer, which is mainly due to an obvious intensity enhancement but limited current increases in 50-nm MoOx-based white TEOLED. The change amplitudes of the Commission International de l’Eclairage （CIE） chromaticity coordinates are less than （0.016, 0.005） for all devices in a wide luminance range over 100 cd/m2, indicating an excellent color stability in our white flexible TEOLEDs. Additionally, the flexible white TEOLED with an MoOx buffer layer shows excellent flexibility to withstand more than 500 bending times under a curvature radius of approximately 9 mm. Research demonstrates that it is mainly attributed to the high surface energy of the MoOx buffer layer, which is conducible to the improvement of the surface adhesion to the PET substrate and the Ag anode.     

Quantum dots-templated growth of strain-relaxed GaN on a c-plane sapphire by radio-frequency molecular beam epitaxy

We investigated the quantum dots-templated growth of a(0001) GaN film on a c-plane sapphire substrate.The growth was carried out in a radio-frequency molecular beam epitaxy system.The enlargement and coalescence of grains on the GaN quantum dots template was observed in the atom force microscopy images,as well as the more ideal surface morphology of the GaN epitaxial film on the quantum dots template compared with the one on the AlN buffer.The Ga polarity was confirmed by the reflected high energy electron diffraction patterns and the Raman spectra.The significant strain relaxation in the quantum dots-templated GaN film was calculated based on the Raman spectra and the X-ray rocking curves.Meanwhile,the threading dislocation density in the quantum dots-templated film was estimated to be 7.1×107cm-2,which was significantly suppressed compared with that of the AlN-buffered GaN film.The roomtemperature Hall measurement showed an electron mobility of up to 1860cm2 /V·s in the two-dimensional electron gas at the interface of the Al 0.25Ga0.75 N/GaN heterojunction.     

A New Conducting Polymer Electrode for Organic Electroluminescence Devices

Conducting polymer polydimethylsiloxane （PDMS） is studied for the high performance electrode of organic electroluminescence devices. A method to prepare the electrode consisting of a SiC thin film and PDMS is investigated. By using ultra thin SiC films with different thicknesses, the organic electroluminescence devices are obtained in an ultra vacuum system with the model device PDMS/SiC/PPV/Alq3, where PPV is poly para-phenylene vinylene and Alq3 is tris（S-hydroxyquinoline） aluminium. The capacitance voltage （C - V）, capacitance-frequency （C - F）, current-voltage （I - V）, radiation intensity-voltage （R - V） and luminance eFficiency-voltage （E - V） measurements are systematically studied to investigate the conductivity, Fermi alignment and devices properties in organic semiconductors. Scanning Kelvin probe measurement shows that the work function of PDMS/SiC anode with a 2.5-nm SiC over layer can be increased by as much as 0.28eV, compared to the conventional ITO anode. The result is attributed to the charge transfer effect and ohmic contacts at the interface.     

Doping in the Mixed Layer to Achieve High Brightness and Efficiency Organic Light Emitting Devices

Doping in the mixed layer was introduced to fabricate high brightness and high efficiency organic light emitting devices.In these devices,a copper phthalocyanine(CuPc) film acts as the buffer layer,a naphthylphenybiphenyl amine (NPB) film as the hole transport layer and a tris(8-hydroxyquinolinolate) aluminium (Alq3) film as the electron transport layer.The luminescent layer consists of the mixture of NPB,Alq3( to be called the mixed layer),and an emitting dopant 5,6,11,12-petraphenylnaphthacene (rubrene),where the concentration of NPB declined and the concentration of Alq3 was increased gradually in the deposition process.Adopting this doping mixed layer,the device exhibits the maximum emission of 49300cd/m^2 at 35V and the maximum efficiency of 7.96cd/A at 10.5V,which have been improved by two times in comparison with conventional doped devices.We attribute this improvement to the effective confinement of carriers in the mixed layer,which leads to the increase of the recombination efficiency of carriers.     

微波等离子体化学气相沉积合成掺氮金刚石薄膜的缺陷和结构特征及其生长行为

Diamond film was deposited in CH₄ and H₂ gas mixture with a small amount of N₂ by microwave plasma assisted chemical vapor deposition (MPCVD). Scanning electron microscopy, Raman spectroscopy and transmission electron microscopy were applied to characterize the film. The results showed that the growth of grains are different the central region and the edge. In the central region, diamond grains nucleated with a density as high as 4.8×10⁸ cm^-2 and were preferential in 〈001〉 orientation. The inner grains formed an area without stacking faults,which was surrounded by a rim with a high density of stacking faults. A growth model was suggested to interpret the morphological feature and the behavior of preferential growth. At the edge, the grains were identified to be 6H polytypes of diamond and a new twin relationship of grains was found. Besides, the effect of the N dopant on the growth behavior of the diamond film deposited by MPCVD was discussed in connection with the growth rate of the film. 关键词： 金刚石 结构表征 透射电子显微镜 多型金刚石     

Improved Blue-Green Electrophosphorescence from a Tuning Iridium Complex with Benzyl Group in Polymer Light-Emitting Devices

Electroluminescence performances from a tuning biscyclometlated iridium complex with benzyl group are demonstrated in double-layered polymer light-emitting devices （PLEDs） using a blend of poly（9,9-dioctylfluorene） and 2-tert-butylphenyl-5-biphenyl-1,3,4-oxadiazole as a host matrix. Blue-green electrophosphorescent emission with a peak at 521 nm and a shoulder at 492nm was observed. The highest luminance efficiency of 4.8cd/A at current density of 0. 56 mA/cm^2 and a maximum luminance of 1944 cd/m^2 at 217.6 mA/cm^2 were achieved in the devices at the dopant concentration of 8%. The luminous performance of the devices becomes better with increasing dopant concentrations from 1% to 8%. This implies that the concentration quenching of this iridium complex with benzyl group can be efficiently inhibited in the devices.     

Effect of HTS Superconductors on Homogeneity of Measurement Field in Low Field Nuclear Magnetic Resonance Detection

In recent years, superconducting quantum interference devices （SQUIDs） have been demonstrated to be useful in the low field nuclear magnetic resonance （NMR） measurements. The high temperature superconducting （HTS） SQUID used in our experiments has a frequency-independent sensitivity of 40-50fT/Hz^1/2. When a liquid nitrogen cooled LC circuit is employed to form a tuned circuit with the SQUID, the sensitivity of the system can be further enhanced. The LC circuit consists of a capacitor and a coil made of copper wire or HTS tape, which is inductively coupled to the SQUID. However, the homogeneity of the measurement field deteriorates because of the HTS tape coil in the proximity of the sample. In contrast, the thin film SQUID with a washer area of 1 cm^2 has no effect on the NMR signal. Therefore, the impairment of the measurement field homogeneity in the case of different superconducting elements nearby is discussed by examining the free induction decay signals at 9 kHz. It is found that a square superconducting film with an area of i cm^2 may compensate for the inhomogeneity of the measurement field after the adjustment of its position.     

Effect of RF power on the properties of transparent conducting zirconium-doped zinc oxide films prepared by RF magnetron sputtering

Transparent and conducting zirconium-doped zinc oxide films with high transparency and relatively low resistivity have been successfully prepared by radio frequency (RF) magnetron sputtering at room temperature. The RF power is varied from 75 to 150W. At first the crystallinity and conductivity of the film are improved and then both of them show deterioration with the increase of the RF power. The lowest resistivity achieved is 2.07×10^-3\Omegacm at an RF power of 100W with a Hall mobility of 16cm²V^-1s^-1 and a carrier concentration of 1.95×10²⁰cm^-3. The films obtained are polycrystalline with a hexagonal structure and a preferred orientation along the c-axis. All the films have a high transmittance of approximately 92% in the visible range. The optical band gap is about 3.33eV for the films deposited at different RF powers.     

High Refractive Index Ti_3O_5 Films for Dielectric Metasurfaces

Ti_3 O_5 films are deposited with the help of an electron beam evaporator for their applications in metasurfaces.The film of subwavelength(632 nm) thickness is deposited on a silicon substrate and annealed at 400°C. The ellipsometr.y result shows a high refractive index above 2.5 with the minimum absorption coefficient in the visible region, which is necessary for high efficiency of transparent metasurfaces. Atomic force microscopy analysis is employed to measure the roughness of the as-deposited films. It is seen from micrographs that the deposited films are very smooth with the minimum roughness to prevent scattering and absorption losses for metasurface devices. The absence of grains and cracks can be seen by scanning electron microscope analysis, which is favorable for electron beam lithography. Fourier transform infrared spectroscopy reveals the transmission and reflection obtained from the film deposited on glass substrates. The as-deposited film shows high transmission above 60%,whieh is in good agreement with metasurfaces.     

Stress Analysis of ZnO Film with a GaN Buffer Layer on Sapphire Substrate

A 5.35-μm-thick ZnO film is grown by chemical vapour deposition technique on a sapphire （0001） substrate with a GaN buffer layer. The surface of the ZnO film is smooth and shows many hexagonal features. The full width at half maximum of ZnO （0002） u-rocking curve is 161 arcsec, corresponding to a high crystal quality of the ZnO film. From the result of x-ray diffraction 0 - 20 scanning, the stress status in ZnO film is tensile, which is supported by Raman scattering measurement. The reason of the tensile stress in the ZnO film is analysed in detail. The lattice mismatch and thermal mismatch are excluded and the reason is attributed to the coalescence of grains or islands during the growth of the ZnO film.     

Investigation of high resolution compact gamma camera module based on a continuous scintillation crystal using a novel charge division readout method

The objective of this study is to investigate a high performance and lower cost compact gamma camera module for a multi-head small animal SPECT system. A compact camera module was developed using a thin Lutetium Oxyorthosilicate （LSO） scintillation crystal slice coupled to a Hamamatsu H8500 position sensitive photomultiplier tube （PSPMT）. A two-stage charge division readout board based on a novel subtractive resistive readout with a truncated center-of-gravity （TCOG） positioning method was developed for the camera. The performance of the camera was evaluated using a flood 99roTe source with a four-quadrant bar-mask phantom. The preliminary experimental results show that the image shrinkage problem associated with the conventional resistive readout can be effectively overcome by the novel subtractive resistive readout with an appropriate fraction subtraction factor. The response output area （ROA） of the camera shown in the flood image was improved up to 34%, and an intrinsic spatial resolution better than 2 mm of detector was achieved. In conclusion, the utilization of a continuous scintillation crystal and a flat-panel PSPMT equipped with a novel subtractive resistive readout is a feasible approach for developing a high performance and lower cost compact gamma camera.     

Precursor evolution and growth mechanism of BTO/YBCO films by TFA–MOD process

In this study, BaTiO3 （BTO）-doped YBCO films are prepared on LaA103 （100） single-crystal substrates by metal- organic decomposition （MOD） using trifluoroacetate （TFA） precursor solutions. The critical current density （Jc） of BTO/YBCO film is as high as 10 MA/cm2 （77 K, 0 T）. The BTO peak is found in the X-ray diffraction （XRD） pattern of a final YBCO superconductivity film. Moreover, a comprehensive study of the precursor evolution is conducted mainly by X-ray analysis and μ-Raman spectroscopy. It is found that the TFA begins to decompose at the beginning of the thermal process, and then further decomposes as temperature increases, and at 700 ℃ BTO nanoparticles begin to appear. It sug- gests that the YBCO film embedded with BTO nanoparticles, whose critical current density （Jc） is enhanced, is successfully prepared by an easily scalable chemical solution deposition technique.     

Compact wide stopband superconducting bandpass filter using modified spiral resonators with interdigital structure

In this study, we propose a novel resonator that is composed of a modified spiral with an embedded interdigital capacitor. A large ratio of the first spurious frequency to the fundamental resonant frequency is obtained, which is suitable for the design of filters with wide stopbands, and the circuit size is considerably reduced by embedding the interdigital structure in the spiral. For demonstration, a compact four-pole high temperature superconducting(HTS) filter with a center frequency of 568 MHz is designed and fabricated on double-sided YBCO film with a size of 11.4 mm×8.0 mm. The filter measurement shows excellent performance with an out-of-band rejection level better than 60.9 dB up to 3863 MHz.     

Top-Emitting Organic Light-Emitting Devices Based on Silicon Substrate with High Luminance and Low Turn-on Voltage

We have fabricated a top-emitting organic light-emitting device on silicon substrate with high yellow luminance based on 5,6,11,12-tetraphenylnaphthacene sub-monolayer. It consists of a thin layer of highly conductive silver as the semitransparent cathode and surfaced-modified Ag as the anode. The device turns on at 3 V with the luminance of 8.4 cd/m^2. The maximum current efficiency is 1.3 cd/A at 6 V and the luminance reaches 14790 cd/m^2 at 14 V. The performance of the device is excellent in top-emitting organic light-emitting devices according to our knowledge.