La替代对Bi2O3-ZnO-Nb2O5陶瓷介电性能的影响

研究了A位La^3＋替代对Bi2O3-ZnO-Nb2O5（BZN）陶瓷结构和介电性能的影响。当La替代量X〈0．5时,陶瓷相结构为单一的立方焦绿石相。随着La替代量的增加,陶瓷样品的晶粒尺寸和密度逐渐减小。低温下的介电弛豫现象随着La替代量的增加也发生有规律的变化,介电常数逐渐减小,弛豫峰峰形逐渐宽化,峰值温度向低温方向移动。与La替代量为0．1、0．15、0．3和0．5相对应的弛豫峰的峰值温度分别为-95℃、-99℃、-109℃和-112℃。     

Dielectric and impedance properties of LiCa2Nb5O15 ceramics

Polycrystalline sample of LiCa₂Nb₅O₁₅ was prepared by a high-temperature solid-state reaction technique. Structural and microstructural characterizations were performed by X-ray diffraction (XRD) and scanning electron microscope (SEM). X-ray studies reveal that the material has orthorhombic structure at room temperature. Electrical properties of the material have been studied using a complex impedance spectroscopy (CIS) technique in a wide temperature (31–500 °C) and frequency (10²–10⁶ Hz) ranges. The complex impedance plots reveal the main contribution of bulk effects in it. The bulk resistance, evaluated from complex impedance spectrum, has been observed to decrease with rise in temperature showing a typical negative temperature coefficient of resistance (NTCR) behavior. Variation of dc conductivity (bulk) with temperature demonstrates that the compound exhibits Arrhenius type of electrical conductivity.     

Dielectric and microwave properties study of TiFeNbO6 ceramics added Bi2O3

In this paper the ceramic matrix of TiFeNbO₆ (TFNO) was studied. The TFNO phase was calcined at 1,075 °C and used to prepare the samples, of 2, 4, 6, 8 and 10 wt% of the Bi₂O₃ and sintered at 1,125 °C. These samples were characterized by X-ray diffraction (XRD), Raman spectroscopy (RS), scanning electron microscopy and dielectric microwave properties. XRD and RS were used to characterize these samples. The samples presented two new phases. The first phase is the tetragonal rutile structure with a space group of P4₂/mnm, equivalent at parent rutile Ti_0.4Fe_0.3 Nb_0.3O₂ (TFNO) with 040725 ICSD code, and the secondary phase belonging to the pyrochlore system Bi_1.721Fe_1.056Nb_1.134O₇ (BFNO), with a space group of Fd-3mZ (227), in a cubic structure. The dielectric properties have shown significant variation for 10 % Bi₂O₃-added sample, because the formation of the new phase (BFNO) contributes with the reduction of τ _f from 281.12 to 77.45 ppm/°C and with increase in ε _r , from 47.23 to 63.77 and an increase in the dielectric loss (tan δ), from 0.0016 to 0.0068, respectively. Even though, Bi₂O₃ additive deteriorates the dielectric loss of the ceramics, the permittivity has enhanced significantly, which is advantageous for reduction of the air gap between the probe and the DRA antennas that influences on the samples for future application in microwave.     

Dielectric and impedance properties of Ba2Sr3DyTi3V7O30 ceramics

A new member of tungsten bronze family, Ba₂Sr₃DyTi₃V₇O₃₀, was synthesized by a high-temperature solid-state reaction method. Studies of structural by X ray diffraction technique and micro-structural by scanning electron microscope brings out orthorhombic crystal structure and densely packed nonuniform grains for the above ceramic system. Detailed dielectric studies as a function of temperature (30–500?°C) at different frequencies (1–1,000?kHz) reveals diffuse-phase-transition and loss anomaly at 81?°C. Detailed studies of impedance parameters provide a better understanding of the electrical properties and type of relaxation processes in the material. Temperature variation of dc and ac conductivity shows that this compound exhibits negative temperature coefficient of resistance. The frequency variation of ac conductivity shows that the compound obeys Jonscher’s universal power law.     

Dielectric and impedance characteristics of Ba(Bi0.5Nb0.5)O3 ceramics

A lead free polycrystalline material Ba(Bi_0.5Nb_0.5)O₃ was prepared using a high-temperature mixed oxide technique using high purity ingredients. The formation of the material in monoclinic crystal structure was confirmed by an X-ray structural analysis at room temperature. The nature and texture of microstructure by scanning electron microscopy show that the compound has well defined grains uniformly distributed throughout the surface of the sample. Detailed studies of dielectric and impedance properties of the material, carried out in the frequency range of (1 kHz–1 MHz) at different temperatures (30 °C to 475 °C), have shown many interesting properties. Dielectric study showed an existence of diffuse phase transition around 317 °C. The temperature dependence of impedance parameters (impedance, modulus etc.) of the material exhibits a strong correlation of its micro-structure (i.e., bulk, grain boundary, etc.) with the electrical parameters. An existence of negative temperature coefficient of resistance (NTCR) type behavior in the material similar to that of semiconductors was also observed. The complex electric modulus analysis indicates the existence of hopping conduction mechanism in the system with non-exponential type of conductivity relaxation. The nature of variation of dc conductivity with temperature confirms the Arrhenius behavior of the material. The ac conductivity spectra show a typical signature of an ionic conducting system, and are found to obey Jonscher’s universal power law. The temperature dependent pre-exponential factor (A) shows peak and frequency exponent (n) possesses a minimum at transition temperature.     

Sm2O3掺杂Bi2O3-ZnO-Nb2O5基陶瓷的结构与性能

研究了Sm2O3掺杂的bi2O3-ZnO-Nb2O5(BZN)基陶瓷(Bi1.5-xSmxZn0.5)(Zn0.5Nb1.5)O7(O≤x≤0.6,BSZN),的结构及介电性能.结果表明纯BZN陶瓷的结构为立方焦绿石单相;当Sm2O3掺杂量较少(O＜x≤0.5)时,样品的相结构仍然保持立方焦绿石单相;随着Sm2O3掺杂量的进一步增加(x≥0.6),样品出现其它相.同时,试样的介电性能随结构的变化而呈现有规律的变化.     

Dielectric and ferroelectric properties of Bi(Zn1/2Ti1/2)O3-PbTiO3-PbZrO3 ternary ceramics

Ceramics of a new ternary solid solution system, xBi(Zn(1/2)Ti(1/2))O(3-yPbTiO(3)z)PbZrO(3) (xBZT-yPT-zPZ), with compositions along the solubility limit curve are prepared by solid-state reaction and sintering technique. Two morphotropic phase boundaries (MPBs) separating the orthorhombic and tetragonal (MPB(O-T)) phases and the tetragonal and rhombohedral (MPB(T-R)) phases, respectively, are observed with increasing z (0.10 ≤ x ≤ 0.21; 0 ≤ y ≤ 0.49). It is found that the transition from the ferroelectric to paraelectric phase becomes more diffuse with the addition of BZT into the PZT solid solution. Enhanced dielectric and ferroelectric properties appear at MPB(R-T), which exists over a wide composition region (0.45 ≤ z ≤ 0.6), as revealed by X-ray diffraction and dielectric measurements. The dielectric constant reaches a maximum value (ε' = 1250) on the tetragonal majority side of the MPB. The highest remnant polarization (P(r) = 34.2 μC/cm(2)) is found in the composition at the center of the MPB, where the rhombohedral and tetragonal phases coexist in almost equal quantities.     

Bi(Mg_(1/2)Ti_(1/2))O_3-PbTiO_3压电陶瓷体系介电与居里温度特性研究

采用传统固相法工艺制备了(1-x)Bi(Mg1/2Ti1/2)O3-x Pb Ti O3(BMT-x PT,0.34≤x≤0.44)陶瓷。研究发现,随着PT含量增加,试样结构由三方相逐渐转变为四方相结构,当0.36x0.40时,试样结构处于准同型相界(MPB)区。研究表明BMT组元是一种具有非铁电体特征的组分,随着PT含量减少,BMT-PT体系的居里温度减小,介电峰变得越来越不明显。通过研究BMT-PT体系组分与居里温度(TC)的关系可以看出:(1)PT含量为0.34~0.44时,TC随BMT含量变化实验值和Stringer的经验值差异较小,变化趋势一致;(2)BMT-PT体系居里温度最大值可能在x=0.73的附近,其居里温度最大值TC max约为550℃。     

Dielectric enhancement of the trilayered Bi3.15Eu0.85Ti3O12/Bi3.15Nd0.85Ti3O12/Bi3.15Eu0.85Ti3O12 thin film deposited on Pt/Ti/SiO2/Si substrate

The trilayered Bi_3.15Eu_0.85Ti₃O₁₂/Bi_3.15Nd_0.85Ti₃O₁₂/Bi_3.15Eu_0.85Ti₃O₁₂ (BET/BNT/BET) thin film was deposited on Pt/Ti/SiO₂/Si(100) substrates by metal organic decomposition at annealing temperature of 650 °C, and the microstructure, chemical composition, leakage current, dielectric and ferroelectric properties were investigated by field emission scanning electron microscopy, X-ray diffraction, energy dispersive X-ray spectroscopy, semiconductor characterization system, impedance analyzer and ferroelectric tester. The trilayered thin film is of crack-free and dense surface with some discrete cluster distribution, and typical Bi-layered perovskite polycrystalline phase. The dielectric constant ε _r and dissipation factor tanδ are 1,233 and 0.0215 at 100 kHz for the trilayered thin film. Comparing with the pure BET and BNT thin films, the dielectric constant of trilayered thin film is enhanced, which is due to the space charge and the intermediate superlattice. The trilayered thin film shows excellent dielectric properties and can be promisingly used for the high dielectric layer of silicon-based embedded capacitors in package substrate.     

Impedance spectroscopic characteristics of Bi2Fe2W3O15 ceramics

Bi₂Fe₂W₃O₁₅ was prepared in the polycrystalline form using a standard solid-state reaction technique in order to study its dielectric and electrical properties. The formation of a single-phase compound was confirmed by preliminary X-ray structural studies of the material. Studies of electrical properties (impedance, modulus and conductivity) of the compound over a wide range of temperature and frequency provide many interesting results. The impedance and modulus parameters were calculated using complex plane formalism, and suitable equivalent circuits have been proposed for different temperature and frequency regions. The nature of variation of ac conductivity with frequency at different temperatures obeys the Jonscher’s universal power law. The temperature-dependence of dc conductivity pattern follows the Arrhenius behavior.     

Dielectric properties of bismuth doped CaCu3Ti4O12 ceramics

Ca_1?3x/2Bi_xCu₃Ti₄O₁₂ (x = 0.0–0.3) ceramics were prepared by the conventional solid-state reaction method. X-ray powder diffraction analysis confirmed the formation of cubic CCTO phase except for subtle peaks of CuO. SEM micrographs suggested that the morphologies of doped CCTO ceramics had been sheet-like for high Bi-doping amount, and the dominant grain size decreasing could be seen for the small content of Bi-doping CCTO. Dielectric properties of pure and doped CCTO were investigated in a broad temperature range of 20–420 K. The results showed that bismuth doping could decrease the dielectric loss but suppress the dielectric temperature stability at the same time. Bi doped CCTO ceramics presented different relaxation properties. As to pure CCTO and BCCTO (x = 0.3) only one MW relaxation (Relaxation I) could be found, which moves to higher frequency with temperature increasing. However, two relaxation processes (Relaxation I and II) appear for BCCTO (x = 0.1–0.2). By means of complex impedance spectra analysis and Arrhenius fitting, we successfully separated the different conductive segments and explained the mechanisms of the two relaxation processes. Relaxation I appeared at low temperature could be attributed to the V_O doping energies inside CCTO grains which did not showed significant changing of activation energy after bismuth doping. For Relaxation II at higher temperature than Relaxation I, with activation energy obviously depending on the Bi-ion concentration, may be related with the V_O point defects at the grain boundaries.     

Low-temperature firing and microwave dielectric properties of MgTiO3 ceramics with Bi2O3–V2O5

The effects of Bi₂O₃–V₂O₅ additive on the microstructures, the phase formation and the microwave dielectric properties of MgTiO₃ Ceramics were investigated. The Bi₂O₃–V₂O₅ addition lowered the sintering temperature of MgTiO₃ ceramics effectively from 1400 to 875 °C due to the liquid-phase effect. The microwave dielectric properties were found to strongly correlate with the amount of Bi₂O₃–V₂O₅ addition. The saturated dielectric constant decreased and the maximum Qf values increased with the increasing V₂O₅ content, which is attributed to the variation of the second phase including Bi₂Ti₂O₇, Bi₄V_1.5Ti_0.5O_10.85 and BiVO₄. At 875 °C, MgTiO₃ ceramics with 5.0 mol% Bi₂O₃–7 mol% V₂O₅ gave excellent microwave dielectric properties: ε_r = 20.6,Qf = 10420 GHz (6.3 GHz).     

Synthesis, impedance and dielectric properties of LaBi5Fe2Ti3O18

The compound, LaBi₅Fe₂Ti₃O₁₈, is a five-layered material belonging to the family of bismuth layered structure ferroelectromagnetics. D.c. and a.c. conductivity measurements were performed on the samples. Dielectric measurements were also performed on these samples. Combined impedance and modulus plots were used as tools to analyse the sample behaviour as a function of frequency. Cole-Cole plots showed non-Debye relaxation.     

Dielectric characteristics of composite ceramics in the Ba(Mg1/3Ta2/3)O3-BaO · Nd2O3 · 5TiO2 system

Dielectric characteristics of composite ceramics in the system Ba(Mg_1/3Ta_2/3)O₃-BaO · Nd₂O₃ · 5TiO₂ were investigated to search for a new candidate system for microwave dielectric ceramics with modifiable dielectric constant, low dielectric loss and small temperature dependence. The dielectric constant could be adjusted in the range 25–81 by controlling the concentration of BaO · Nd₂O₃ · 5TiO₂, while the dielectric loss remained of the order of 10^–4 for some compositions. Moreover, the dielectric properties in the present system could be significantly improved by post-densification thermal treatment.     

Effect of HIPing on conductivity and impedance measurements of DyBi5Fe2Ti3O18 ceramics

X-ray diffraction, a.c. impedance and conductivity (a.c. and d.c.) have been used to characterize DyBi₅Fe₂Ti₃O₁₈. Samples were prepared by solid state double sintering method. A few samples were also subjected to hot isostatic pressing (HIP) at 800°C for 2 h at 100 MPa pressure. The data on XRD, impedance and conductivity of two sets of samples are compared to understand study of effect of HIPing on the properties of DyBi₅Fe₂Ti₃O₁₈     

Effects of a Bi2Ti2O7 seeding layer on properties of Bi3.5Nd0.5Ti3O12 thin film

A thin-film bilayer structure consisting of polycrystalline Bi_0.5Nd_0.5Ti₃O₁₂ (BNdT) and preferential (111)-orientated Bi₂Ti₂O₇ (BTO) has been prepared on n-type Si (100) substrate by a chemical solution deposition and spin-coating technique. The crystallization of BNdT film can be enhanced and the surface consists of larger grains because of the intervention of BTO. We fabricated the Au/BNdT/BTO/Si and Au/BNdT/Si structures, respectively. Compared with BNdT, the BNdT/BTO film shows better insulating and memory properties. The room temperature resistivity is 10¹¹ Ω cm at a dc bias of 5 V. The C–V hysteresis curve is referred to as polarization-type switching and the memory window is about 3 V. All these results show that the BTO is an effective diffusion-barrier and plays a brilliant role as a seeding layer.     

Dielectric properties of Sr3CuNb2O9 perovskite ceramics

The dielectric constant ? and loss tangent tanδ of Sr₃CuNb₂O₉ perovskite ceramics prepared by solid-state reactions have been measured at temperatures from 300 to 900 K and frequencies from 25 to 1 × 10⁶ Hz. The results demonstrate that the samples slowly cooled from the temperature of the final, high-temperature firing (1200°C) have relatively low permittivity (? ? 10) and dielectric losses (tanδ ? 0.005 at 1 kHz) at room temperature, with no strong dielectric dispersion and no prominent maxima in the temperature dependences of their permittivity and dielectric loss. The ceramics quenched from 1300°C exhibit a pronounced Debye-type low-frequency relaxation and strong dielectric dispersion in conjunction with high permittivity ? ? 2000 at low frequencies and/or high temperatures. The observed dielectric anomalies in the Sr₃CuNb₂O₉ ceramics can be understood in terms of Maxwell-Wagner relaxation at dielectric inhomogeneities associated with the quenching-induced difference in oxygen-vacancy concentration between the grain bulk and surface layer.     

Sandwiched BaNd2Ti4O12/Bi4Ti3O12/BaNd2Ti4O12 ceramics prepared by spark plasma sintering

Spark plasma sintering (SPS) combined with heat treatment was investigated to prepare laminated ceramics from compositions having quite different sintering temperatures. Although the optimal sintering temperature of BaNd₂Ti₄O₁₂ (BNT) ceramics was much higher than that of Bi₄Ti₃O₁₂ (BIT) ceramics, sandwiched BaNd₂Ti₄O₁₂/Bi₄Ti₃O₁₂/BaNd₂Ti₄O₁₂ (BNT/BIT/BNT) composite ceramics were successfully prepared with this new method. The results of scanning electron microscopy (SEM) and electron probe microanalysis (EPMA) showed that the BNT layers and the BIT layer were well bonded and no significant diffusion between them was observed. The temperature coefficient of dielectric constant of the laminated ceramic was found to be much smaller than that of BNT ceramic.     

A位掺杂Bi4Ti3O12陶瓷的铁电性能研究

用传统固相烧结工艺,制备了纯相的Bi4Ti3O12 (BTO)陶瓷,A位掺杂的Bi3.25La0.75Ti3O12(BLT),Bi3.15Nd0.85Ti3O12(BNdT)铁电陶瓷.X射线衍射结果表明,所有样品均为单一的层状钙钛矿结构,La、Nd掺杂未改变BTO的晶体结构.铁电测试结果表明,BTO、BLT和BNdT陶瓷的剩余极化2Pr值分别为12.4、23.8和39.4μC/cm2.A位掺杂后,BLT、BNdT的2Pr值比未掺杂的BTO分别提高了1.92和3.18倍.漏电流测试表明,BLT、BNdT陶瓷的漏电流密度比BTO明显降低.A位掺杂显著提高了BTO陶瓷的铁电性能.