Design and testing of a power electronic synthetic inductor

In many applications inductors are often replaced with circuits, typically based upon operational amplifiers, which emulate an inductance for reasons of package size or to closer approximate the desired ideal behaviour. A power electronic synthetic inductor offers an alternative circuit which can emulate an inductor with relatively low power consumption, as well as provide a flexible circuit topology that is not limited to inductive behaviour. In this article, a power electronic synthetic inductor topology and control system is developed. A prototype synthetic inductor was built and tested, and its operation was explored and compared with an operational-amplifier-based synthetic inductor. A minor modification of the circuit allows the emulation of a negative resistance in parallel with the synthesised inductor, which can increase the quality factor of the system beyond that associated with an ideal inductor. Experimental results reveal that the power electronic synthetic inductor has significantly lower power consumption than an operational-amplifier-based synthetic inductor.     

一种采用LC谐振电路的高频差分有源电感

提出了一种采用LC并联谐振电路的新型差分有源电感,实现了宽的工作频带、高的Q值、较大的电感值和可调谐功能.采用无源电感和MOS晶体管可变电容构成LC谐振电路,减小了等效串联电阻和等效并联电容,在增大电感值、Q值的同时,扩大了工作频带.仿真结果表明,在2～7.6 GHz频率范围内,该新型差分有源电感的电感值大于26 nH...     

A Novel Broad-Band MMIC VCO Using an Active Inductor

This paper proposes a novel broad-band MMIC VCO using an active inductor. This VCO is composed of a serial resonant circuit, in which the capacitor is in series with an active inductor that has a constant negative resistance. Since the inductance value of this active inductor is inversely proportional to the square of the transconductance and can vary widely with the FETs gate bias control, a broad-band oscillation tuning range can be obtained. Furthermore, since this active inductor can generate a constant negative resistance of more than 50 , the proposed VCO can oscillate against a 50- output load immediately without using additional impedance transformers. We have fabricated the VCO using a GaAs MESFET process. A frequency tuning range of more than 50%, from 1.56 to 2.85 GHz, with an output power of 4.4±1.0 dBm, was obtained. With a carrier of 2.07 GHz, the phase noise at 1-MHz offset was less than –110 dBc/Hz. The chip size was less than 0.61 mm², and the power consumption was 80 mW. This broad-band analog design can be used at microwave frequencies in PLL applications as a compact alternative to other types of oscillator circuits.     

Performance analysis of a low power low noise tunable band pass filter for multiband RF front end

This paper presents a low power tunable active inductor and RF band pass filter suitable for multiband RF front end circuits. The active inductor circuit uses the PMOS cascode structure as the negative transconductor of a gyrator to reduce the noise voltage. Also, this structure provides possible negative resistance to reduce the inductor loss with wide inductive bandwidth and high resonance frequency. The RF band pass filter is realized using the proposed active inductor with suitable input and output buffer stages. The tuning of the center frequency for multiband operation is achieved through the controllable current source. The designed active inductor and RF band pass filter are simulated in 180 nm and 45 nm CMOS process using the Synopsys HSPICE simulation tool and their performances are compared. The parameters, such as resonance frequency, tuning capability, noise and power dissipation, are analyzed for these CMOS technologies and discussed. The design of a third order band pass filter using an active inductor is also presented.     

Floating Immittance Function Simulator and Its Applications

A new floating immittance function simulator circuit is proposed using two different active elements, a dual-output second generation current conveyor (DO-CCII) and an operational transconductance amplifier (OTA). The presented circuit can realize a positive and negative floating inductor, capacitor and resistor depending on the passive component selection. Since the passive elements are all grounded, this circuit is suitable for fully integrated circuit design. The circuit does not require any component matching conditions, and it has a good sensitivity performance with respect to tracking errors. Moreover, the proposed positive and negative inductance, capacitor and resistor simulator can be tuned electronically by changing the biasing current of the OTA or can be controlled through the grounded resistor or capacitor. The proposed floating inductor simulator circuit is demonstrated by using a SPICE simulation for 0.35 μm TSMC CMOS technology. The proposed circuit consumes an average power of 1 mW using ±1.5 V supply voltages.     

Equivalent Circuit Analysis of an RF Integrated Inductor with Ferrite Thin-Film

针对已制作并发表的一种新型铁氧体磁膜结构射频集成微电感进行了等效电路分析.阐述了磁性铁氧体薄膜对电感的感值(L)和品质因数(Q)的增强作用.对射频测试结果进行了电路元件参数提取.结果表明,与空气芯无磁膜微电感相比,磁膜结构微电感的L和Q在2GHz处分别提高了17%和40%.等效电路分析和测试结果均证明了铁氧体薄膜的引入对增强射频集成微电感性能的作用显著.     

铁氧体磁膜RF集成微电感等效电路分析

针对已制作并发表的一种新型铁氧体磁膜结构射频集成微电感进行了等效电路分析.阐述了磁性铁氧体薄膜对电感的感值(L)和品质因数(Q)的增强作用.对射频测试结果进行了电路元件参数提取.结果表明,与空气芯无磁膜微电感相比,磁膜结构微电感的L和Q在2GHz处分别提高了17%和40%.等效电路分析和测试结果均证明了铁氧体薄膜的引入对增强射频集成微电感性能的作用显著.     

Floating inductance,FDNR and capacitance simulation circuit employing only grounded passive elements

A circuit for realizing floating inductance, grounded to a floating admittance converter, floating frequency dependent negative resistance (FDNR) and floating capacitance simulators depending on the passive element selection is presented. The proposed circuit employs only grounded passive elements and second-generation current conveyors (CCIIs) but it requires single passive component matching. Replacing second-generation current controlled conveyors (CCCIIs) instead of the CCIIs in the developed circuit, an electronically tunable floating inductor with bias currents can be obtained. Also, replacing dual X second-generation current conveyors (DXCCIIs) instead of the CCIIs in the introduced circuit, an electronically tunable floating inductor with bias voltages can be obtained. Under non-ideality conditions, the proposed circuit can realize a lossless floating inductor and a capacitor depending on the passive element choice. Simulation results using SPICE program are given to verify the theory.     

一种高Q值且频带可独立调谐的差分有源电感

设计了一种高Q值、频带可独立调谐的新型差分有源电感。采用多重共源-共栅调制结构,使有源电感具有小的等效串联电阻和高的Q值。采用多重共源负反馈结构,使有源电感具有小的等效并联电容、高的自谐振频率和宽的工作频带。通过对正跨导器跨导的调谐来实现对工作频带的调谐,同时,对负跨导器中共源管的跨导进行调谐,补偿因调谐工作频带而对Q值带来的影响,从而实现频带相对于Q值的独立调谐。对该新型差分有源电感进行性能验证,结果表明, 5.9 GHz时,有源电感的Q值高达1 143,电感值可达154 nH。工作频带在6.1~7.7 GHz之间调谐时,调谐范围可达26.2%,而Q值峰值在1 162~1 120之间变化,变化范围仅为3.6%。     

CMOS低噪声放大器的噪声系数优化

目前大量的研究文献已经描述了如何找到使噪声系数最小的低噪声放大器输入网络的最佳品质因数,但是它们往往遗漏了一个重要的参数——源极电感负反馈低噪声放大器中的栅极电感,它的寄生阻抗为低噪声放大器增加了明显的噪声。本研究课题提出了2种优化方法,这2种方法均满足功率匹配并均衡了晶体管所产生的噪声贡献和栅极寄生阻抗所产生的噪声贡献,从而实现了在栅极电感品质因数、功耗、增益限制下的噪声优化。     

一种适用于多波段无线通信的品质因数增强型的CMOS射频滤波器

提出了一种使用品质因数增强型的有源电感的射频带通滤波器,描述了在宽射频频段上可调谐的品质因数增强型的有源电感设计技术,而且解释了与有源电感噪声和稳定性相关的问题.该滤波器采用0.18μm CMOS工艺制造,它所占用芯片的有效面积仅为150μm×200μm.测试结果表明:该射频滤波器中心频率为2.44GHz时,3dB带宽为60MHz,中心频率可在2.07～2.44GHz范围内调谐,1dB压缩点为-15dBm,而静态功耗为10.8mW;在中心频率为2.07GHz时,滤波器的品质因数可达到103.     

一种电感值可独立调节的低噪声有源电感

基于回转器-电容原理,联合采用回转电容、可调反馈电阻、补偿电容和噪声抵消支路,提出了一种电感值相对于Q值可独立调节的低噪声有源电感。通过改变正-负跨导器之间的回转电容值来实现电感值的调节。因调节电感值而引起的Q值变化,可通过调节正-负跨导器之间的可调反馈电阻值和伪差分对之间的补偿电容值来共同补偿,从而实现电感值相对于Q值的独立调节。通过噪声抵消支路来降低有源电感的噪声。对该有源电感的性能验证表明,协同调节3个外部偏置电压,可实现电感值相对于Q值的独立调节,在电感峰值变化幅度为175.49%时,Q值的峰值变化幅度仅为4.88%。在0~6 GHz内,有源电感的输入参考噪声电流均小于45 pA·Hz-1/2,噪声较低。     

Design of a RF matching network based on a new tunable inductor concept

We present in this paper a new technique of matching impedances. It consists in replacing a fixed inductor in a matching network by a variable one, and its value is able to change with the load impedance. In the study, the fixed inductance considered is a CMOS integrated one, while the tunable inductance is based on a new Piezomagnetic MEMS concept. A theoretical model of such a tunable inductor is first presented, and then inserted in a matching network in two different ways: inductance value varies either discretely or continuously. The obtained matching networks are compared with a fixed inductor matching network, and simulation results are presented and discussed to validate the presented method and to evaluate the matching efficiency of each matching network.     

Monolithic tunable active inductor with independent Q control

A 1.1-GHz fully integrated GaAs MESFET active inductor is presented in this paper. Both the inductance and loss resistance are tunable with the inductance independent of series loss tuning. The measured loss resistance is tunable over a -10- to +15-Ω range with a corresponding change in inductance of less than 10% at 100 MHz and less than 4% for frequencies above 500 MHz. The inductance is tunable from 65 to 90 nH. Considerably larger bandwidths can be achieved depending on the fabrication technology employed and the intended application of the circuit     

微波单片集成有源电感

本文介绍了一种由砷化镓单片集成电路工艺实现的Q值相对较高的微波有源电感的新型结构,其电路原理图由三个微波场效应晶体管和一个电容组成.这种微波有源电感具有工作频率高,电感值不受晶片大小的限制,并且具有可受直流偏压控制的特点,在微波电路微型化方面具有较高的实用价值.     

采用新型可调谐有源电感的频率可调谐高Q低噪声的带通滤波器

对采用双回转结构交叉耦合差分有源电感(DGC-DAI)的可调谐、高品质因子Q和低噪声差分有源带通滤波器(THQLNA-BPF)进行了研究。输入级,采用差分共基-共射结构,以抑制噪声和获得高频特性;输出级,采用差分共集放大器,以获得高的驱动能力和高的隔离度;有源电感滤波网络,利用DAI电感值可宽范围调谐、高Q值和低的噪声,来分别实现BPF的中心频率的宽范围调节、高Q值和良好的噪声特性;进一步地,利用变容二极管网络改善BPF中心频率的可调性和提高Q值,利用有源可调负阻网络提高BPF的Q值和进行Q值独立调节。基于WIN 0.2μm GaAs HBT工艺,利用ADS对THQLNA-BPF进行性能验证。结果表明:中心频率可在1.68 GHz~4.32 GHz范围内调谐,调谐量达2.64 GHz;最大和最小Q分别达到83.6和33.6;噪声范围为6.04 dB~8.83 dB;在中心频率为3.69 GHz时,输入1 dB压缩点为-7.3 dBm,稳定系数μ>1;静态功耗小于18 mW。     

Two new impedance source network topologies for inverter applications

In the last decade, the impedance source networks have been vastly used in electrical power conversion such as in electric vehicles, industrial machines, medical systems and avionics, with considerable efficiency improvements. In this study, two new impedance source network topologies for inverter applications have been designed and tested. The first one is a one-cell switched inductor (SL), the second is a two-cell switched inductor (X-SL) combined with the classical Z-source inverter (ZSI). This novel combination allows the switched inductor to store the unused source energy in the interval when the source separates from the ZSI network during the shoot-through zero state. The design is generalised by adding multiple branches of series inductors and diodes which further improve the circuit performance. The National Instrument Multisim programme is used for the simulations of the new topologies. Both of the proposed topologies, SL combined with classical ZSI (SL&ZSI) and X-SL combined with classical ZSI (X-SL&ZSI), are tested with specific inductance and capacitance values. Major improvements are observed in the boost factor and the elimination of the start-up inrush current for both topologies, compared to the classical ZSI scheme. Furthermore, in both topologies, a significant reduction in the capacitor stress levels is obtained.     

一种Q-f与L-f特性增强的高线性有源电感

提出了一种品质因数(Q)-频率(f)特性与电感值(L)-频率(f)特性增强的新型高线性有源电感,主要由负跨导器、新型正跨导器、Q值增强调制模块、反馈电阻、两级电平转换电路和负跨导器分流支路组成。通过多个电路单元间的协同配合和所设置的三个外部偏置端电压的联合调谐,该有源电感不但具有高Q值,Q值相对于电感值可独立调节,而且高Q峰值及电感值在不同频率下能够基本保持不变,同时也有高的线性度。验证结果表明,在6 GHz下,Q值可在275~4 471之间变化,调谐率为176.8%,而电感值的变化率仅为1.5%；在4.8 GHz、5.2 GHz、5.6 GHz和6 GHz的4个频点下,分别获得了4 480、4 469、4 473和4 471的高Q峰值,变化率仅为0.24%,且电感值分别为7.532 nH、7.467 nH、7.909 nH、7.977 nH,变化率仅为6.3%；电感值的-1 dB压缩点为-13 dBV。     

A low flicker noise direct conversion receiver for IEEE 802.11g wireless LAN using differential active inductor

In this paper, a low flicker-noise, 2.4 GHz direct onversion receiver (DCR) has been designed. A dynamic current injection (DCI) technique has been utilized in addition with a tuning inductor in the mixing stage. The tuning inductor has been replaced by a differential active inductor circuit, which gives the same inductance, with less chip size and high quality factor. The DCR has been designed in a TSMC 0.18 μm 1P6M CMOS process for wireless LAN 802.11g applications. The proposed DCR achieves 6.7 dB SSB-NF, 34 dB conversion gain, −13.5 dBm IIP3, and flicker noise (1/f) corner frequency of 30 kHz with 137.5 mW power consumption from 1.8 V supply voltage.     

基于RLC串联谐振实现电感的测量

介绍了一种测量电感的新方法,以RLC串联谐振电路为基础,将待测电感与电阻、电容串联起来组成RLC振荡电路;当电路达到谐振状态时,当电容已知,可得待测电感的值。此方法测量原理简单,操作方便,测量结果精确度较高,值得推广。