SiC crystal growth from transition metal silicide fluxes

SiC crystal growth in transition metal silicide melts was investigated by using spontaneous infiltration and solution methods. In the infiltration experiments, SiC powder preforms were infiltrated with Fe_xSi_y (Fe₃Si, Fe₅Si₃ and FeSi) and CoSi melts. The dissolution and precipitation of SiC led to SiC crystals growth in the infiltrated Fe₅Si₃ and CoSi melts, SiC particles coalescing in FeSi and free carbon precipitation in Fe₃Si. In the solution experiments, carbon from the graphite crucible dissolved in and reacted with FeSi₂ and Ti_2.3Si_7.7 to form SiC crystals. Scanning electron microscopy (SEM), X‐ray diffraction (XRD) and Raman scattering spectrometer were employed to investigate SiC crystals growth. Based on the investigation, the effect of solution content on the SiC crystal growth, the growth mechanisms in both methods and prototypes of the SiC crystals are also discussed. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Modeling analysis of liquid encapsulated Czochralski growth of GaAs and InP crystals

The results of three‐dimensional unsteady modeling of melt turbulent convection with prediction of the crystallization front geometry in liquid encapsulated Czochralski growth of InP bulk crystals and vapor pressure controlled Czochralski growth of GaAs bulk crystals are presented. The three‐dimensional model is combined with axisymmetric calculations of heat and mass transfer in the entire furnace. A comprehensive numerical analysis using various two‐dimensional steady and three‐dimensional unsteady models is also performed to explore their possibilities in predicting the melt/crystal interface geometry. The results obtained with different numerical approaches are analyzed and compared with available experimental data. It has been found that three‐dimensional unsteady consideration of heat and mass transfer in the crystallization zone provides a good reproduction of the solidification front geometry for both GaAs and InP crystal growth.     

Numerical investigation of crystal growth process of bulk Si and nitrides – a review

Heat and mass transfer during crystal growth of bulk Si and nitrides by using numerical analysis was studied. A three‐dimensional analysis was carried out to investigate temperature distribution and solid‐liquid interface shape of silicon for large‐scale integrated circuits and photovoltaic silicon. The analysis enables prediction of the solid‐liquid interface shape of silicon crystals. The result shows that the interface shape became bevel like structure in the case without crystal rotation. We also carried out analysis of nitrogen transfer in gallium melt during crystal growth of gallium nitride using liquid‐phase epitaxy. The result shows that the growth rate at the center was smaller than that at the center. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Some peculiarities of Ti in‐diffusion in lithium niobate

The process of one‐ and two‐dimensional Ti in‐diffusion in lithium niobate, LiNbO₃ (LN), single crystals of 〈x〉 and 〈z〉 orientations at 950‐1060°C in oxygen/water vapor medium had been studied. In the case of one‐dimensional diffusion, a flat diffusion front consisting of Ti solid solution in LN is formed. The process kinetics is described by Fick's equation for the case of a permanent source. In the case of two‐dimensional Ti diffusion, the diffusion zone contour acquires the shape close to elliptical. The diffusion rate in the tangential direction is about an order of magnitude higher than in the normal direction. A model qualitatively describing such nontrivial character of the diffusion process is suggested. The model is based on: a) incongruent lithium evaporation out of LN at high temperatures; b) low thermodynamic activity of Li in LiTiO₃ – product of Ti interaction with LN. These factors produce a significant nonlinearity of the process, since a strong chemical bond between Li and Ti in this phase leads to a mutual increase in their diffusive mobility. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Direct melt crystal growth of isotactic polybutene‐1 trigonal phase

The morphology, crystalline structure and crystal growth kinetics of melt‐crystallized thin isotactic polybutene‐1 films have been studied with transmission electron microscopy, electron diffraction and optical microscopy. It is demonstrated that a bypass of tetragonal phase crystallization and direct melt crystal growth of the trigonal phase can be achieved via self‐seeding at atmospheric pressure using solution‐grown trigonal crystals as nuclei. Electron microscopy and optical microscopy observations show that melt‐crystallized isotactic polybutene‐1 single crystals of the trigonal phase have rounded or hexagonal morphologies around 75°C. The growth rate of trigonal crystals in the melt has been obtained by in‐situ optical microscopy. The growth rate of trigonal crystals in the melt is 1/100 and 1/1000 that of tetragonal crystals in the melt around 70 and 90°C, respectively. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Initial stages of SiC crystal growth by PVT method

Initial stages of SiC crystal growth by Physical Vapor Transport method were investigated. The following features were observed: (a) many nucleation crystallization centres appeared on the seed surface during the initial stage of the growth, (b) at the same places many separate flat faces generated on the crystallization front, (c) the number of facets was dependent on the shape of the crystallization front and decreased during growth, (d) appearance of many facets lead to decrease of structural quality of crystals due to degradation of regions where crystallization steps from independent centres met. The results revealed that the optimal crystallization front should be slightly convex, which permits the growth of crystals with single nucleation centre and evolution of single facet on the crystallization front. The subjects of study were the shape and the morphology of growth interface. Defects in the crystallization fronts and wafers cut from the crystals were studied by optical microscopy, atomic force microscopy (AFM) combined with KOH etching and X‐ray diffraction. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Synthesis and tribological properties of laminated Ti3SiC2 crystals

Laminated Ti₃SiC₂ crystals are prepared of Ti, Si, C and Al powders by the method of hot isostatic pressing with NaCl additive in argon at 1350 °C. The laminated morphology of Ti₃SiC₂ is presented through the SEM and TEM observations. The results of high resolution transmission electron microscope (HRTEM) and selected area electron diffraction (SAED) patterns combined, it can be seen that the layers are of Ti₃SiC₂ crystals. The growth mechanism of Ti₃SiC₂ crystals, controlled by two‐dimensional nucleation, is also explained. The tribological properties of Ti₃SiC₂ crystals as additives in HVI500 base oil are investigated by a UMT‐2 ball‐on‐plate friction and wear tester. The study shows that under determinate conditions, the friction coefficient of the base oil containing Ti₃SiC₂ crystals is lower than that of pure base oil, and it decreases with the increase of mass percent of Ti₃SiC₂ nanolayers when its proportion is lower than 5wt. %. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

CBr4 as precursor for VPE growth of cubic silicon carbide

This work presents a study of carbon tetrabromide (CBr₄) as precursor to deposit 3C‐SiC on (001) and (111) Si by VPE technique at temperatures ranging between 1000 °C and 1250 °C. TEM, AFM and SEM results indicate that the epitaxy proceeds as a 3D growth of uncoalesced islands at low temperature, whereas a continuous crystalline layer with hillocks on top is obtained above 1200 °C. The hillocks observed at high temperature appear well faceted and their shape and orientation are analyzed in detail by AFM, showing a {311} preferred orientation. 3D island growth was suppressed by adding C₃H₈ to the precursor gases. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Induced growth of Pb0.97La0.02(Zr0.66Sn0.27Ti0.07)O3 antiferroelectric single crystals with a platinum wire

Relaxor antiferroelectric (Pb,La)(Zr,Sn,Ti)O₃ (PLZST) with the composition near the morphotropic phase boundary shows excellent electrical properties. However, the crystal growth of PLZST is limited by the incongruent melting of the materials. Crystal growth of PLZST was induced by a platinum wire in the flux solution with 50 wt% PbO‐PbF₂‐B₂O₃ as a solvent. The obtained PLZST single crystals are optical transparent with light yellow color. The size of the crystals in regular rectangular shape varies from 0.5 mm to 1 mm. The PLZST single crystals exhibit tetragonal phase structure. The element contents of the crystals were measured by inductively coupled plasma atomic emission spectrometry. The results show that the composition of as‐grown crystals is a little bit deviated from the starting composition. The single crystals show two dielectric peaks at 115 °C and 182 °C, corresponding to antiferroelectric‐ferroelectric and ferroelectric‐paraelectric phase transitions. The dielectric data of as‐grown crystals indicate there is typical relaxor behavior near 182 °C. The value of relaxor factor n is 1.49642.     

Flux growth of La‐doped lead zirconate stannate titanate antiferroelectric crystals

Relaxor antiferroelectric single crystals lead lanthanum zirconate stannate titanate (PLZST) with the composition around the morphotropic phase boundary (MPB) have been grown by flux method using 50 wt% PbO‐PbF₂‐B₂O₃ as a flux. The obtained crystals are light yellow in color. The XRD patterns revealed that the habitual faces of the obtained crystal are (001). The crystal morphology was studied and related to a layer growth mechanism controlled by two‐dimensional growth. The chemical composition of as‐grown crystal was analyzed by inductively coupled plasma atomic emission spectrometry (ICP), indicating a slight decrease of the amount of Ti compared to the starting materials. The result was verified by the XRD patterns with the phase transformation from the co‐existence of tetragonal and rhombohedra phases to the single tetragonal phase. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Flux growth and characterization of Ti‐ and Ni‐doped forsterite single crystals

Forsterite monocrystals doped with Ti and Ni were grown by the flux growth technique. A suitable mixture of flux (MoO₃, V₂O₅, Li₂CO₃) and nutrient was slowly cooled down to 750 °C from 1250 °C or 1350 °C. The crystals were then characterized by powder and single‐crystal X‐ray diffraction, scanning electron microscopy and differential scanning calorimetry (DSC). Variations observed in crystal size were attributed by both the varying experimental conditions in which they had been obtained, and to the amount of Ni substituted for Mg in the structure. High abundances of doped forsterite required a cooling rate of 1.8 K h^‐1. These synthetic, well‐characterized Ti and Ni doped forsterite crystals may have potential for exploitation in industrial fields. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Contribution to the Ti‐Bi phase diagram

The system Ti‐Bi has been investigated by solid/liquid diffusion couples at 400, 500, 600 and 700 °C. Indication that the growth rate of the diffusion layers at 500 °C is linear has been found, with a growth constant of around 5 × 10^–11 m.s^–1. The existence of the Ti₂Bi phase has been confirmed. Some formerly unknown binary phases (TiBi, Ti₂Bi₃, TiBi₂) have been observed. The phase TiBi is, probably, identical with Ti₈Bi₉ reported previously. All intermediate phases suffer air corrosion, but in various degrees. A tentative variant of the Ti‐Bi phase diagram, including the newly found compounds, has been constructed. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Liquid phase epitaxy set‐up designed for in situ X‐ray study of SiGe island growth on (001) Si substrates

In situ X‐ray examination at a synchrotron beamline of the solution growth of self‐assembled SiGe structures on silicon (001) substrates through the backside has been realized by a specific heating equipment and a suitable growth assembly. The furnace allows heating of the growth assembly up to 600 °C. The temperature field and the gas flow in the furnace have been numerically modeled. In this way a meaningful estimate about the power consumption and the thermal gradient across the sample has been reached. Despite its low heat capacity and, thus, fast heating and cooling ability the furnace can be stabilized to ± 0.1 K by a high‐performance temperature controller. The growth assembly has been prepared within three separate stages carried out in conventional slideboat liquid phase epitaxy equipment. Such growth assembly allows carrying out then intended experiments without H₂ as normally used in liquid phase epitaxy in favor of N₂, meeting the demand of minimized risks at beamlines. The equipment ensures an easy handling of the growth assembly. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Diffusion couple studies of the Ti‐Bi‐Zn system

The system Ti‐Bi‐Zn has been investigated using diffusion couples consisting of solid Ti and liquid (Bi+Zn) phase. The diffusion paths at 400, 500, 700 and 800 °C have been traced by means of electron microprobe analyses. The growth constants of the diffusion layers are roughly assessed. The phase diagram data obtained in this investigation are compared with previous studies of equilibrated alloys. The existence of the ternary compound TiBiZn has been confirmed. The formation of another phase with approximate formulae Ti₄Bi₃Zn to Ti₉Bi₇Zn₄ has been observed at high temperatures. The latter compound as well as the ternary extension of the Ti_XBi_Y (X ≈ 5, Y ≈ 6) phase react easily with air. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Study on rapid growth of highly‐deuterated DKDP crystals

Highly‐deuterated potassium dihydrogen phosphate (DKDP) crystals were grown rapidly from point seeds under high supersaturation in a temperature range of 40‐60 °C. The growth rate was about 1‐2 order of magnitude higher than that of the traditional temperature reduction method. It was found that highly pure raw materials, overheating at high temperature, ultrafine filtration and supersaturation stability were needed to keep the solution from spontaneous nucleation at high overcooling. The effect of growth conditions on pyramid faces was different from that of prismatic faces. The tetragonal to monoclinic phase solubility transition scarcely occurred in our experiments even though the overcooling of monoclinic phase was as high as 10 °C in some cases. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Synthesis of ZnO nanorods by the thermal reduction process of a mixture of ZnO and Al powder

Single‐crystalline Zinc oxide (ZnO) nanorods were firstly synthesized on gold‐coated Si substrate via a simple thermal reduction method from the mixture of ZnO and Al powder. The growth process was carried out in a quartz tube at different temperature (550‐700 °C) and at different oxygen partial pressure. Their structure properties were investigated by X‐ray diffraction (XRD), scanning electron microscope (SEM), X‐ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM). The length of the as‐prepared ZnO nanorods was up to several micrometers and their diameters were about 130 nm. The X‐ray diffraction patterns, transmission electron microscopic images, and selective area electron diffraction patterns indicate that the one‐dimensional ZnO nanorods are a pure Single‐crystal and preferentially oriented in the [0001] direction. The reaction mechanism of ZnO nanorods was proposed on the basis of experimental data. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Atomic force microscopy studies on liquid inclusions and induced defects of cadmium mercury thiocyanate crystal

Liquid inclusions and various defects accordingly induced on a nonlinear optical material of CMTC crystal were investigated by atomic force microscopy. Liquid inclusions are chiefly caused by formation of macrosteps, which result from impurity‐induced inhibiting of step growth and meeting of step trains advancing along different directions. Liquid inclusions induce generation of dislocations and even cracks within the crystal by three‐dimensional nucleation growth. Liquid inclusions also provide screw dislocation growth sources, leading to formation of spiral hillock trains with ridged tails. Etching experiments reveal circular hollow cores, indicative of screw dislocation growth, and negative crystals resulting from further crystallization in the liquid inclusions. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and characterization of nano‐crystalline hydroxyapatite at physiological conditions

Pure, stable stoichimetric nano crystalline hydroxyapatite material was crystallized by double diffusion technique at physiological conditions, temperature at 37°C and pH at 7.4. The sample was sintered at 400°C, 750°C and 1200°C with equal interval of time. They were characterized by X‐ray diffraction studies, Fourier Transformation Infra‐Red analysis, Thermogravimetric analysis, Scanning Electron Microscopic studies and Atomic Force Microscopic studies. The X‐ray analysis confirmed that the grown crystals are to be the pure form of hydroxyapatite. Infra‐red studies confirmed CO free hydroxyapatite. Thermogravimetric studies showed the thermal stability of the hydroxyapatite crystals even at 1200°C. The presence of pores in the sintered sample was traced by scanning electron microscopy. Atomic force microscopy revealed the presence of nano crystalline HAP of size 0.958 nanometer in the samples grown using this technique. At higher temperature the deagglomeration of bulk phases and agglomeration of nano phases leads to the nano crystalline HAP were observed. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Crystal growth,dielectric and FIR reflectivity studies on PZN(0.91)‐PT(0.09) single crystals

Crystal growth of PZN‐PT single crystals using slow cooling flux technique with PbO flux is reported in this communication. Optimum growth conditions to maximize the amount of perovskite are also suggested. The grown crystals are characterized by dielectric and FIR spectroscopy. Temperature dependence of ε′ very close to the transition temperature shows a first order phase transition. Diffused phase transition and strong frequency dependence of ε′ around transition temperature are also observed. The real part of ε′ was found to obey the relation ε′ – ε_∞ = χ′(T‐T_o)². Dispersion in the ferroelectric phase is suggested to originate from ordering of domains. Competition in the B‐site occupancy by Zn, Nb and Ti ions is suggested to be the origin for the additional modes in the FIR reflectivity at room temperature. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Factors affecting the formation of misoriented domains in 6H‐SiC single crystals grown by PVT method

Misoriented domains (MDs) are common defects in 6H‐SiC single crystals. We performed an experimental study on the formation of MDs in 2‐inch 6H‐SiC single crystals. Micro‐Raman spectroscopy revealed that the polytype of MDs was mainly 4H‐SiC. By changing growth conditions, it was found that the MDs' formation was closely related to growth rate and the position of highest temperature relative to growth interface. When the growth rate of ingots was relatively high the MDs were more likely to form. Furthermore, the nearer growth interface the position of highest temperature was, the larger the size of the MDs. Based on our experimental findings we suggested that the MDs' formation and the polytype switching from 6H‐ to 4H‐SiC were due to too large axial and/or radial temperature gradients.The results would be helpful to improve the quality of SiC single crystals grown by PVT technique. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)