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用等离子体增强化学气相沉积方法制备了掺磷氢化非晶硅薄膜材料,对薄膜的电阻率以及电阻温度系数进行了详细研究。结果表明,掺磷a-Si:H薄膜的电阻率随磷掺杂比(PH3/SiH4)的增大和气体温度的升高而降低,但随退火温度的升高而增大,掺磷a-Si:H薄膜的电阻温度系数随薄膜自身电阻率的增大而增大,但随环境温度的升高而降低。 相似文献
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以SiH4,PH3,CH4为源气体,采用射频等离子增强化学气相沉积(RF-PECVD)方法,通过改变CH4流量制备了磷、碳二元掺杂非晶硅薄膜,研究了磷、碳二元掺杂对薄膜微观结构和光学性能的影响.用X射线光电子能谱仪(XPS)观察到了C-Si峰的存在,同时发现随着CH4流量的增加,薄膜中C元素含量逐渐增大.傅里叶转换红外光谱(FTIR)测试表明,掺杂薄膜中的H含量随着CH4流量的增加逐渐增大,由11.5%增大到24.6%.光学性能测试表明,随着CH4流量的增加,掺杂薄膜的折射率逐渐降低,而光学带隙逐渐增加. 相似文献
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采用等离子体化学气相沉积(PECVD)法,以高纯度硅烷(SiH4)为反应气体,硼烷(B2H6)为掺杂气体,在ITO玻璃衬底上制备出硼轻掺杂浓度的氢化非晶硅(a-Si∶H)半导体薄膜。测量了样品的光暗电导率、折射率、消光系数、禁带宽度随掺杂浓度的变化。结果表明:随着硼掺杂浓度的增加,薄膜的暗电导率先减小后增大。消光系数、禁带宽度等都随着掺杂浓度的增加而变化。在不同工艺条件下,改变硼掺杂浓度,确定了最佳掺杂比(光暗电导率之比最大),制备出适合器件级轻掺杂氢化非晶硅薄膜光敏层。 相似文献
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用射频等离子增强化学气相沉积方法(RF-PECVD)制备磷掺杂氢化非晶硅(a-Si:H)薄膜,研究了辉光放电气体压强(20~80 Pa)对薄膜的暗电导率、电导激活能以及电阻温度系数的影响;利用激光喇曼光谱研究了气体压强对a-Si:H薄膜微结构的影响,并与薄膜的电学性能进行了综合讨论.结果表明:随着辉光放电气体压强的增加,a-Si:H薄膜的暗电导逐步减小,但电导激活能和电阻温度系数都有不同程度的增大;同时,薄膜内非晶网络的短程和中程有序程度逐渐恶化. 相似文献
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本文研究了用磷原子的选择表面掺杂法来作非晶硅(α-Si)膜的横向固相外延(L-SPE),采用这种方法的磷原子仅在α-Si膜的表面层掺杂。已经发现,L-SPE的生长速率和从籽晶区起的生长长度,可由磷原子掺杂层的厚度来改变,但与α-Si膜厚度的关系不大。采用有效截面的透射电子显微技术,还发现,在掺磷样品表面中L-SPE的生长前沿由单晶面组成。为了解释这些实验结果,我们提出了表面掺磷样品的一种L-SPE生长模型。 相似文献
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Hydrogenated amorphous silicon-carbon (a-Si:C:H) and hydrogenated silicon-nitrogen (a-Si:N:H) antireflective films were deposited
by plasma-enhanced chemical vapor deposition (PECVD) at 13.56 MHz in SiH4 + CH4 and SiH4 + NH3 gaseous mixtures of various compositions. The silicon and glass samples were investigated by optical spectroscopy, Fourier-transform
infrared spectroscopy (FTIR), and scanning electron microscopy (SEM). A correlation between film properties and process parameters
was found. The refractive index decreased and the energy gap increased with an increase of carbon and nitrogen in the films.
For some process parameters, it was possible to obtain smooth, hydrogen rich, and homogeneous films of low reflectivity. The
silicon solar cells with antireflective coatings revealed an increase in efficiency. 相似文献
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在模拟计算以a-Si TFT为有源开关,以a-Si PIN为光敏源的有源成像器件工作特性与各单元元件关系的基础上,详细讨论了单元器件的材料、物理参数对a-Si TFT/PIN耦合对特性的影响,并给出一定试验结果.用LED光源照射a-Si PIN的光电转换率可达18.1nA/lx,a-Si TFT/PIN有较好的线性度. 相似文献
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本文评述并探讨了-Si:H薄膜在电子学领域的种种应用。-Si:H太阳电池是非晶硅薄膜的最重要的器件,目前的主要研究课题仍是改进材料性质和器件参数,以提高电池的能量转换效率。利用-Si:H灵敏的光敏效应记录图象信息,可能有广阔的应用前景(如用于摄象管和静电复印等)。以-Si:H场效应管为基础的集成电路,易于实现大面积和结构的立体化,因此有很大吸引力。-Si:H FET驱动的液晶大面积显示和材料本身的场致发光在大面积平面显示中直接应用的可能性亦引人注目。以整流、检测等为目的的其它-Si:H二极管也都具有相当的价值。 相似文献
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Kwon-Young Choi Kee-Chan Park Cheol-Min Park Min-Koo Han 《Electron Device Letters, IEEE》1999,20(4):170-172
We have proposed and fabricated the new bottom-gated poly-Si TFT with a partial amorphous-Si (a-Si) region by employing the selective laser annealing. The channel layer of the proposed TFTs is composed of poly-Si region in the center and a-Si region in the edge. The TEM image shows that the local a-Si region is successfully fabricated by the effective cut out of the incident laser light in the upper a-Si layer. Our experimental results show that the reverse leakage currents are decreased significantly in the new poly-Si TFT compared with conventional one. This reduction is due to the suppression of field emission currents by local a-Si region like that of a-Si TFTs while the ON currents are kept almost the same due to the considerable inducement of electron carriers in the short a-Si channel by the positive gate bias 相似文献
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Kenichiro Wakisaka Yukinori Kuwano 《Progress in Photovoltaics: Research and Applications》1998,6(3):207-217
Eighteen years have passed since the first industrial use of amorphous silicon (a-Si) solar cells for consumer products. At present, a-Si solar cells are entering a new age of use in power generating systems at private residences and other outdoor applications. This paper reviews recent advances in a-Si solar cells and their applications. Technological developments in the field of a-Si solar cells are discussed. Various applications and systems that take advantage of the a-Si solar cell are then introduced. Finally, future prospects are discussed, including a new concept called the GENESIS system for worldwide energy generation and transmission. © 1998 John Wiley & Sons, Ltd. 相似文献
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热处理升温快慢对非晶硅中形成的纳米硅粒尺寸的影响 总被引:2,自引:2,他引:0
含氢非晶硅薄膜经过快速热退火处理后,我们用拉曼散射和X-射线衍射技术对样品进行分析.我们的实验结果表明:在非晶硅薄膜中形成的纳米硅晶粒的大小随着热退火过程中升温快慢而变化.在升温过程中,当单位时间内温度变化量较大时(~100℃/s),则所形成纳米硅粒较小(~1.6~15nm);若单位时间内温度变化量较低(~1℃/s),则纳米硅粒较大(~23~46nm)。根据分形生长理论和计算机模拟,我们讨论了升温快慢与所形成的纳米硅颗粒大小的关系. 相似文献