Matching Charge Extraction Contact for Wide‐Bandgap Perovskite Solar Cells

Efficient wide‐bandgap (WBG) perovskite solar cells are needed to boost the efficiency of silicon solar cells to beyond Schottky–Queisser limit, but they suffer from a larger open circuit voltage (V_OC) deficit than narrower bandgap ones. Here, it is shown that one major limitation of V_OC in WBG perovskite solar cells comes from the nonmatched energy levels of charge transport layers. Indene‐C60 bisadduct (ICBA) with higher‐lying lowest‐unoccupied‐molecular‐orbital is needed for WBG perovskite solar cells, while its energy‐disorder needs to be minimized before a larger V_OC can be observed. A simple method is applied to reduce the energy disorder by isolating isomer ICBA‐tran3 from the as‐synthesized ICBA‐mixture. WBG perovskite solar cells with ICBA‐tran3 show enhanced V_OC by 60 mV, reduced V_OC deficit of 0.5 V, and then a record stabilized power conversion efficiency of 18.5%. This work points out the importance of matching the charge transport layers in perovskite solar cells when the perovskites have a different composition and energy levels.     

Defect Activity in Lead Halide Perovskites

The presence of various types of chemical interactions in metal‐halide perovskite semiconductors gives them a characteristic “soft” fluctuating structure, prone to a wide set of defects. Understanding of the nature of defects and their photochemistry is summarized, which leverages the cooperative action of density functional theory investigations and accurate experimental design. This knowledge is used to describe how defect activity determines the macroscopic properties of the material and related devices. Finally, a discussion of the open questions provides a path towards achieving an educated prediction of device operation, necessary to engineer reliable devices.     

FA‐Assistant Iodide Coordination in Organic–Inorganic Wide‐Bandgap Perovskite with Mixed Halides

Mixed‐halide wide‐bandgap perovskites are key components for the development of high‐efficiency tandem structured devices. However, mixed‐halide perovskites usually suffer from phase‐impurity and high defect density issues, where the causes are still unclear. By using in situ photoluminescence (PL) spectroscopy, it is found that in methylammonium (MA⁺)‐based mixed‐halide perovskites, MAPb(I_0.6Br_0.4)₃, the halide composition of the spin‐coated perovskite films is preferentially dominated by the bromide ions (Br^?). Additional thermal energy is required to initiate the insertion of iodide ions (I^?) to achieve the stoichiometric balance. Notably, by incorporating a small amount of formamidinium ions (FA⁺) in the precursor solution, it can effectively facilitate the I^? coordination in the perovskite framework during the spin‐coating and improve the composition homogeneity of the initial small particles. The aggregation of these homogenous small particles is found to be essential to achieve uniform and high‐crystallinity perovskite film with high Br^? content. As a result, high‐quality MA_0.9FA_0.1Pb(I_0.6Br_0.4)₃ perovskite film with a bandgap (E_g) of 1.81 eV is achieved, along with an encouraging power‐conversion‐efficiency of 17.1% and open‐circuit voltage (V_oc) of 1.21 V. This work also demonstrates the in situ PL can provide a direct observation of the dynamic of ion coordination during the perovskite crystallization.     

Recent Advances in Wide‐Bandgap Photovoltaic Polymers

The past decade has witnessed significant advances in the field of organic solar cells (OSCs). Ongoing improvements in the power conversion efficiency of OSCs have been achieved, which were mainly attributed to the design and synthesis of novel conjugated polymers with different architectures and functional moieties. Among various conjugated polymers, the development of wide‐bandgap (WBG) polymers has received less attention than that of low‐bandgap and medium‐bandgap polymers. Here, we briefly summarize recent advances in WBG polymers and their applications in organic photovoltaic (PV) devices, such as tandem, ternary, and non‐fullerene solar cells. Addtionally, we also dissuss the application of high open‐circuit voltage tandem solar cells in PV‐driven electrochemical water dissociation. We mainly focus on the molecular design strategies, the structure‐property correlations, and the photovoltaic performance of these WBG polymers. Finally, we extract empirical regularities and provide invigorating perspectives on the future development of WBG photovoltaic materials.     

High‐Performance Nonfullerene Polymer Solar Cells based on Imide‐Functionalized Wide‐Bandgap Polymers

High‐performance nonfullerene polymer solar cells (PSCs) are developed by integrating the nonfullerene electron‐accepting material 3,9‐bis(2‐methylene‐(3‐(1,1‐dicyanomethylene)‐indanone))‐5,5,11,11‐tetrakis(4‐hexylphenyl)‐dithieno[2,3‐d:2′,3′‐d′]‐s‐indaceno[1,2‐b:5,6‐b′]dithiophne) (ITIC) with a wide‐bandgap electron‐donating polymer PTzBI or PTzBI‐DT, which consists of an imide functionalized benzotriazole (TzBI) building block. Detailed investigations reveal that the extension of conjugation can affect the optical and electronic properties, molecular aggregation properties, charge separation in the bulk‐heterojunction films, and thus the overall photovoltaic performances. Single‐junction PSCs based on PTzBI:ITIC and PTzBI‐DT:ITIC exhibit remarkable power conversion efficiencies (PCEs) of 10.24% and 9.43%, respectively. To our knowledge, these PCEs are the highest efficiency values obtained based on electron‐donating conjugated polymers consisting of imide‐functionalized electron‐withdrawing building blocks. Of particular interest is that the resulting device based on PTzBI exhibits remarkable PCE of 7% with the thickness of active layer of 300 nm, which is among the highest values of nonfullerene PSCs utilizing thick photoactive layer. Additionally, the device based on PTzBI:ITIC exhibits prominent stability, for which the PCE remains as 9.34% after thermal annealing at 130 °C for 120 min. These findings demonstrate the great promise of using this series of wide‐bandgap conjugated polymers as electron‐donating materials for high‐performance nonfullerene solar cells toward high‐throughput roll‐to‐roll processing technology.     

Realizing Over 13% Efficiency in Green‐Solvent‐Processed Nonfullerene Organic Solar Cells Enabled by 1,3,4‐Thiadiazole‐Based Wide‐Bandgap Copolymers

Two novel wide‐bandgap copolymers, PBDT‐TDZ and PBDTS‐TDZ, are developed based on 1,3,4‐thiadiazole (TDZ) and benzo[1,2‐b:4,5‐b′]dithiophene (BDT) building blocks. These copolymers exhibit wide bandgaps over 2.07 eV and low‐lying highest occupied molecular orbital (HOMO) levels below −5.35 eV, which match well with the typical low‐bandgap acceptor of ITIC, resulting in a good complementary absorption from 300 to 900 nm and a low HOMO level offset (≤0.13 eV). Compared to PBDT‐TDZ, PBDTS‐TDZ with alkylthio side chains exhibits the stronger optical absorption, lower‐lying HOMO level, and higher crystallinity. By using a single green solvent of o‐xylene, PBDTS‐TDZ:ITIC devices exhibit a large open‐circuit voltage (V_oc) up to 1.10 eV and an extremely low energy loss (E_loss) of 0.48 eV. At the same time, the desirable high short‐circuit current density (J_sc) of 17.78 mA cm⁻² and fill factor of 65.4% are also obtained, giving rise to a high power conversion efficiency (PCE) of 12.80% without any additive and post‐treatment. When adopting a homotandem device architecture, the PCE is further improved to 13.35% (certified as 13.19%) with a much larger V_oc of 2.13 V, which is the best value for any type of homotandem organic solar cells reported so far.     

Self‐Confined Growth of Ultrathin 2D Nonlayered Wide‐Bandgap Semiconductor CuBr Flakes

2D planar structures of nonlayered wide‐bandgap semiconductors enable distinguished electronic properties, desirable short wavelength emission, and facile construction of 2D heterojunction without lattice match. However, the growth of ultrathin 2D nonlayered materials is limited by their strong covalent bonded nature. Herein, the synthesis of ultrathin 2D nonlayered CuBr nanosheets with a thickness of about 0.91 nm and an edge size of 45 µm via a controllable self‐confined chemical vapor deposition method is described. The enhanced spin‐triplet exciton (Z_f, 2.98 eV) luminescence and polarization‐enhanced second‐harmonic generation based on the 2D CuBr flakes demonstrate the potential of short‐wavelength luminescent applications. Solar‐blind and self‐driven ultraviolet (UV) photodetectors based on the as‐synthesized 2D CuBr flakes exhibit a high photoresponsivity of 3.17 A W^?1, an external quantum efficiency of 1126%, and a detectivity (D*) of 1.4 × 10¹¹ Jones, accompanied by a fast rise time of 32 ms and a decay time of 48 ms. The unique nonlayered structure and novel optical properties of the 2D CuBr flakes, together with their controllable growth, make them a highly promising candidate for future applications in short‐wavelength light‐emitting devices, nonlinear optical devices, and UV photodetectors.     

Highly Efficient Nonfullerene Polymer Solar Cells Enabled by a Copper(I) Coordination Strategy Employing a 1,3,4‐Oxadiazole‐Containing Wide‐Bandgap Copolymer Donor

A novel wide‐bandgap copolymer of PBDT‐ODZ based on benzo[1,2‐b:4,5‐b′ ]dithiophene (BDT) and 1,3,4‐oxadiazole (ODZ) blocks is developed for efficient nonfullerene polymer solar cells (NF‐PSCs). PBDT‐ODZ exhibits a wide bandgap of 2.12 eV and a low‐lying highest occupied molecular orbital (HOMO) level of ?5.68 eV, which could match well with the low‐bandgap acceptor of 3,9‐bis(2‐methylene‐(3‐(1,1‐dicyanomethylene)‐indanone)‐5,5,11,11‐tetrakis(4‐hexylthienyl)‐dithieno[2,3‐d:2′,3′‐d′]‐s‐indaceno[1,2‐b:5,6‐b′]‐dithiophene (ITIC‐Th), inducing a good complementary absorption from 300 to 800 nm and a minimal HOMO level offset (0.1 eV). The PBDT‐ODZ:ITIC‐Th devices exhibit a large open‐circuit voltage (V_oc) of 1.08 eV and a low energy loss (E_loss) of 0.50 eV, delivering a high power conversion efficiency (PCE) of 10.12%. By adding a small amount of copper(I) iodide (CuI) as an additive to form coordination complexes in the active blends, much higher device performances are achieved due to the improved absorption and crystallinity. After incorporating 4% of CuI, the PCE is elevated to 12.34%, with a V_oc of 1.06 V, a J_sc of 17.1 mA cm^?2 and a fill factor of 68.1%. This work not only provides a novel oxadiazole‐containing wide‐bandgap polymeric donor candidate for high‐performance NF‐PSCs but also presents an efficient morphology‐optimization approach to elevate the PCE of NF‐PSCs for future practical applications.     

Low‐Dimensional Perovskites with Diammonium and Monoammonium Alternant Cations for High‐Performance Photovoltaics

Low‐dimensional Ruddlesden–Popper (LDRP) perovskites are a current theme in solar energy research as researchers attempt to fabricate stable photovoltaic devices from them. However, poor exciton dissociation and insufficiently fast charge transfer slows the charge extraction in these devices, resulting in inferior performance. 1,4‐Butanediamine (BEA)‐based low‐dimensional perovskites are designed to improve the carrier extraction efficiency in such devices. Structural characterization using single‐crystal X‐ray diffraction reveals that these layered perovskites are formed by the alternating ordering of diammonium (BEA²⁺) and monoammonium (MA⁺) cations in the interlayer space (B‐ACI) with the formula (BEA)_0.5MA_n PbnI_3n+1. Compared to the typical LDRP counterparts, these B‐ACI perovskites deliver a wider light absorption window and lower exciton binding energies with a more stable layered perovskite structure. Additionally, ultrafast transient absorption indicates that B‐ACI perovskites exhibit a narrow distribution of quantum well widths, leading to a barrier‐free and balanced carrier transport pathway with enhanced carrier diffusion (electron and hole) length over 350 nm. A perovskite solar cell incorporating BEA ligands achieves record efficiencies of 14.86% for (BEA)_0.5MA₃Pb₃I₁₀ and 17.39% for (BEA)_0.5Cs_0.15(FA_0.83MA_0.17)_2.85Pb₃(I_0.83Br_0.17)₁₀ without hysteresis. Furthermore, the triple cations B‐ACI devices can retain over 90% of their initial power conversion efficiency when stored under ambient atmospheric conditions for 2400 h and show no significant degradation under constant illumination for over 500 h.     

From Lead Halide Perovskites to Lead‐Free Metal Halide Perovskites and Perovskite Derivatives

Despite the exciting progress on power conversion efficiencies, the commercialization of the emerging lead (Pb) halide perovskite solar cell technology still faces significant challenges, one of which is the inclusion of toxic Pb. Searching for Pb‐free perovskite solar cell absorbers is currently an attractive research direction. The approaches used for and the consequences of Pb replacement are reviewed herein. Reviews on the theoretical understanding of the electronic, optical, and defect properties of Pb and Pb‐free halide perovskites and perovskite derivatives are provided, as well as the experimental results available in the literature. The theoretical understanding explains well why Pb halide perovskites exhibit superior photovoltaic properties, but Pb‐free perovskites and perovskite derivatives do not.     

Extending the Photovoltaic Response of Perovskite Solar Cells into the Near‐Infrared with a Narrow‐Bandgap Organic Semiconductor

Typical lead‐based perovskites solar cells show an onset of photogeneration around 800 nm, leaving plenty of spectral loss in the near‐infrared (NIR). Extending light absorption beyond 800 nm into the NIR should increase photocurrent generation and further improve photovoltaic efficiency of perovskite solar cells (PSCs). Here, a simple and facile approach is reported to incorporate a NIR‐chromophore that is also a Lewis‐base into perovskite absorbers to broaden their photoresponse and increase their photovoltaic efficiency. Compared with pristine PSCs without such an organic chromophore, these solar cells generate photocurrent in the NIR beyond the band edge of the perovskite active layer alone. Given the Lewis‐basic nature of the organic semiconductor, its addition to the photoactive layer also effectively passivates perovskite defects. These films thus exhibit significantly reduced trap densities, enhanced hole and electron mobilities, and suppressed illumination‐induced ion migration. As a consequence, perovskite solar cells with organic chromophore exhibit an enhanced efficiency of 21.6%, and substantively improved operational stability under continuous one‐sun illumination. The results demonstrate the potential generalizability of directly incorporating a multifunctional organic semiconductor that both extends light absorption and passivates surface traps in perovskite active layers to yield highly efficient and stable NIR‐harvesting PSCs.     

Solution‐Processed Wide‐Bandgap Organic Semiconductor Nanostructures Arrays for Nonvolatile Organic Field‐Effect Transistor Memory

In this paper, the development of organic field‐effect transistor (OFET) memory device based on isolated and ordered nanostructures (NSs) arrays of wide‐bandgap (WBG) small‐molecule organic semiconductor material [2‐(9‐(4‐(octyloxy)phenyl)‐9H‐fluoren‐2‐yl)thiophene]3 (WG₃) is reported. The WG₃ NSs are prepared from phase separation by spin‐coating blend solutions of WG₃/trimethylolpropane (TMP), and then introduced as charge storage elements for nonvolatile OFET memory devices. Compared to the OFET memory device with smooth WG₃ film, the device based on WG₃ NSs arrays exhibits significant improvements in memory performance including larger memory window (≈45 V), faster switching speed (≈1 s), stable retention capability (>10⁴ s), and reliable switching properties. A quantitative study of the WG₃ NSs morphology reveals that enhanced memory performance is attributed to the improved charge trapping/charge‐exciton annihilation efficiency induced by increased contact area between the WG₃ NSs and pentacene layer. This versatile solution‐processing approach to preparing WG₃ NSs arrays as charge trapping sites allows for fabrication of high‐performance nonvolatile OFET memory devices, which could be applicable to a wide range of WBG organic semiconductor materials.