基于沉淀转化法制备的纳米NiO超级电容器研究

运用沉淀转化法制备Ni(OH)2超微粉末,并通过热处理得到纳米NiO。利用TG、XRD、TEM、N2吸附、循环伏安和恒流充放电测试对样品进行了分析和表征。结果表明,实验制备的NiO粒径为10nm左右,比表面积达到186.3m2/g,并具有合适的孔径分布,NiO赝电容器的工作电压为0.35V,在电流密度为60mA/g时,其比容达到243F/g。     

超级电容器用竹炭的制备及其电容性能

以竹材为原料,在高温Ar保护下制备了高比表面积超级电容器用竹炭材料。用XRD和SEM对所制竹炭进行了物相分析和形貌观察;用循环伏安、恒电流充放电和交流阻抗谱研究了炭化温度对所制超级电容器性能的影响。结果表明:所得竹炭为无定形结构,随着炭化温度的升高,竹炭中石墨微晶向有序态结构发展。炭化温度为500℃时,制备的竹炭电性能最佳。在125mA/g电流密度下的首次放电比电容为226F/g;即使在500mA/g的大电流密度下,其放电比电容仍高达184F/g,第1000次循环时其放电比电容为138F/g,每次循环电容衰减仅为0.046F/g。     

NiO制备工艺对超电容器比电容的影响

以硝酸镍为原料,采用sol-gel法制备Ni(OH)2,在不同温度下,用真空烧结炉和管式电阻炉对其热处理后得到NiO,与活性炭电极组成非对称超级电容器研究了NiO制备工艺对超电容器比电容影响。结果表明:Ni(OH)2经真空烧结炉处理所得NiO的比电容均高于管式电阻炉处理,在260℃保温时间为1 h真空度为0.5 Pa时比电容达最大481.15 F/g。     

热处理对纳米α-MnO2电容特性的影响

采用化学沉淀法制备出超级电容器用纳米MnO2电极材料,研究了热处理工艺对MnO2电容性能的影响。结果表明,产物主相为α-MnO2,粒度分布较均匀,在50～100 nm;热处理温度和时间对MnO2的电容性能有着重要影响。将在300℃热处理3 h的MnO2与活性炭电极组成非对称超级电容器,循环充放电500次,容量仅衰减2.24%;在电流密度为500 mA/g时,比电容量达302.52 F/g。     

模板法制备超级电容器活性炭电极材料

以硅溶胶为模板剂,酚醛树脂为炭源,采用模板法制备了超级电容器活性炭电极材料。利用SEM和BET对实验制备的活性炭进行了分析和表征。以实验研制的活性炭为电极材料,通过循环伏安和恒流充放电测试对其电容性能进行了研究。结果表明:实验研制的活性炭的比表面积为1840m2/g,在7.5×10–3A/cm2的电流密度下,其比容达到290F/g。     

Li4Ti5O12/AC非对称电化学电容器的研究

应用纳米微晶TiO2为原料,通过高温固相反应合成了具有尖晶石结构的锂钛复合氧化物Li4Ti5O12,该材料的首次嵌脱锂效率可达91.9%,10 mA/g电流密度下的可逆嵌锂容量为102 mAh/g。将其制成嵌锂电极后与活性炭电极构成新型的Li4Ti5O12/AC非对称电容体系。测试结果表明:在80 mA/g条件下,其双电极比电容为41.6 F/g,能量密度为采用相同电解液体系的AC/AC双电层电容的4.6倍,充放电效率达95.8%,且大电流性能及循环性能良好。     

氧化镍超电容器的研究

使用传统的水解方法制备氢氧化镍胶体 ,在 30 0℃下进行烧结处理后得到具有特殊微结构及表面特性的超细氧化镍材料。电化学方法证明该材料制备的电极具有典型的电容性能 ,“准电容”比容量达 2 40 F/ g以上 ,优于普通的双电层电容器活性炭电容材料比容量。恒流充放电实验证明使用该材料制备的电容器具有良好的大电流充放电性能以及循环寿命 ,是一种极具发展潜力的储能器件     

氧化镍/膨胀石墨复合物的合成及其电容性能

采用液相沉淀法制备了膨胀石墨(EG)质量分数为40%的氧化镍/膨胀石墨(NiO/EG)复合物,研究了该复合物电化学性能。结果表明:纳米NiO均匀分散在EG表面;导电性良好的EG显著提高了NiO的电化学性能。在6 mol.L–1 KOH电解液中,NiO/EG复合物电极的氧化和还原峰的电位差降低了0.141 V,100 mA.g–1电流密度下比容量可达到370 F.g–1,远高于纯NiO(约206 F.g–1)和纯EG的比容量(约25 F.g–1)。NiO/EG复合物在充放电500次后,比容量仅衰减了2.5%。     

聚苯胺纳米材料电容性能研究

以(NH4)2S2O8为氧化剂,在1 mol/L盐酸环境下化学氧化合成超级电容器用电极材料纳米聚苯胺(PANI)。在1 mol/L H2SO4溶液中考察了材料的电容性能。结果表明:在循环伏安图上出现三对氧化还原峰,分别对应聚苯胺在三种不同氧化状态间的转化以及PANI的降解。放电电流密度为(1.0,4.5,10)×10–3A/cm2时,比容量分别为654,591,525 F/g。经恒定电流10 mA充放电循环1 000次,衰减仅为初始容量的10.7%。     

以杏胡壳为前驱体制备超级电容器炭材料

以杏胡壳为原料,依次采用高温炭化和表面氧化改性的方法制备活性炭电极材料;采用扫描电子显微镜(SEM)表征材料的形貌;室温下,在三电极电化学体系,以2 mol/L的KOH溶液作为电解液,通过循环伏安、恒流充放电、电化学交流阻抗和循环稳定测试分析炭电极材料的电化学性能。研究结果表明:经硝酸氧化改性后的杏胡壳活性炭的综合电化学性能得到了显著提高,在0.5 A/g电流密度下,杏胡壳活性炭质量比电容达到196 F/g。在2 A/g的电流密度下充放电循环2500次后,电容保持率达到99%,展现出优异的电化学性能。     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks     

Call for Papers—Feature Topic,Vol.12,No.7,2015

正Information Centric Networking Information-Centric Networking(ICN) is an emerging direction in Future Internet architecture research,gaining significant tractions among academia and industry.Aiming to replace the conventional host-to-host communication model by a data-centric model,ICN treats data content as the first     

JOURNAL OF ELECTRONICS(CHINA)

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NEXT GENERATION WIRELESS NETWORKS–ESPECIALLY THE USE OF MILLI-MICROWAVE BANDS

The global bandwidth shortage of wireless communications has motivated the exploration of the naillimeter wave （ram-wave） frequency spectrum for the next generation wireless communications. Recent advances in RF CMOS technology and high speed baseband signal processing technologies have enabled tile extensive research and development of turn-wave wireless communications. The multi gigabit per second data rate of ram-wave system will lead to applications in many important scenarios, such as WPAN, WLAN,back-haul for cellular system. And the frequency bands include 28 GHz, 38 GHz, 45GHz, 60GHz, E-BAND and even beyond 100 GHz. The propagation and the imitation of the RF circuits design in these frequency bands make the directional antennas be inevitable for mm-wave communications.