共查询到18条相似文献,搜索用时 62 毫秒
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根据白光照明和可变换波长的光通信中对单芯片双波长发光二极管(LED)要求,在分析了反向偏置隧道结性质的基础上,设计了用反向偏置隧道结连接两个有源区的单芯片双波长LED,用金属有机化学气相沉积技术(MOCVD)在GaAs衬底上一次外延生长了同时发射两种波长的LED,其包含一个AlGaInP量子阱有源区和一个GaInP量子阱有源区,两个有源区由隧道结连接;通过后工艺制备了双波长LED器件,在20mA电流注入下,可以同时发射626nm和639nm两种波长,光强是127mcd,正向电压是4.17V。与传统的单有源区LED进行对比表明,双波长LED有较强的光强;对比单有源区LED的2.08V正向电压,考虑到双波长LED包含隧道结和两个有源区,隧道结上的压降很小。 相似文献
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对AlInGaP红色发光二极管(LED)芯片的发光特性进行了测试分析,在注入强度相等的条件下,EL与PL形状相似,但存在差异,对其光致发光(PL)和电致发光(EL)特性进行了测试分析,研究结果表明,EL与PL有着相同的产生机理,影响其发光谱的因素完全相同;发光光谱之间的差异并不是注入方式的差异,而是源于载流子的不同注入方式给LEDpn结温度带来的不同影响。 相似文献
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设计并研制了用于光电集成(OEIC)的InP基异质结双极晶体管(HBT),介绍了工艺流程及器件结构。分别采用金属有机化学气相沉积(MOCVD)及分子束外延(MBE)生长的外延片,并在外延结构、工艺流程相同的条件下,对两种生长机制的HBT直流及高频参数进行和分析。结果表明,采用MOCVD生长的InP基HBT,直流增益为30倍,截止频率约为38GHz;MBE生长的HBT,直流增益达到100倍,截止频率约为40GHz。这表明,MBE生长的HBT外延层质量更高,在相同光刻条件下,所对应的HBT器件的性能更好。 相似文献
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Kang Yuzhu Li Jianjun Ding Liang Yang Zhen Han Jun Deng Jun Zou Deshu Shen Guangdi 《半导体学报》2009,30(5):47-49
Resonant-cavity light-emitting diodes (RCLED) at 650 nm wavelength were grown by metal organic chemical vapor deposition. In order to improve the interface quality and reduce the device voltage, an AlGaInP material system has been chosen to grow the top DBRs. The emission properties of the RCLED were characterized by measuring PL and EL spectra. The average emission power of the device is 0.5 mW at 20 mA and 2.2 V, and its spectrum full width at half maximum is about 10 nm. 相似文献
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By means of optical absorption, photolumines-cence (PL), Raman scattering and ellipsometry, optical properties of indium nitride (InN) films grown by metal organic chemical vapor deposition (MOCVD) are investigated. Through absorption and PL measurements, it is proven that the band gap of high quality InN is 0.68 eV, which agrees with the recently reported value, 0.7 eV. By analysis of the Raman scattering spectrum, the comparatively low background concentration of electron results in a smaller band gap value. The transition energy of wurtzite InN at critical point is determined by ellipsometric spectra. In addition, the complex refractive index of InN at energy ranging from 0.65 to 4.0 eV is obtained for the first time. 相似文献
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Effect of growth pressure on indium incorporation during the growth of InGaN by MOCVD 总被引:1,自引:0,他引:1
Dong-Joon Kim Yong-Tae Moon Keun-Man Song In-Hwan Lee Seong-Ju Park 《Journal of Electronic Materials》2001,30(2):99-102
The effect of the growth pressure on the In incorporation in InGaN thin films, grown by metalorganic chemical vapor deposition
(MOCVD) have been investigated. The InGaN thin films were grown by varying the growth pressures, while maintaining all other
growth parameters constant. Photoluminescence and high resolution x-ray diffraction (XRD) measurements showed that the In
incorporation in the InGaN thin film was drastically increased with decreasing growth pressures. XRD analysis also revealed
that the In concentration in the films was increased by 7.5% as the growth pressure was decreased from 250 torr to 150 torr.
This can be attributed to the enhanced mass transportation of precursor gases through the boundary-layer on the substrate
in the MOCVD system. 相似文献
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共振腔发光二极管(RCLED)是一种新型发光二极管(LED)结构,同时具备了传统LED和垂直腔面激光器(VCSEL)两者的优点,具有良好的应用价值和广阔的市场前景.介绍了RCLED的基本原理和结构.以及器件结构的设计要点,指出发射波长650 nm的RCLED在塑料光纤(POF)通信领域的应用优势,可以作为民用数据通讯系统用光发射器件的首选.对近年来RCLED尤其是红光波长范围的RCLED发展情况进行了概述,同时指出我国在这一领域的研究现状. 相似文献
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Y. D. Kim F. Nakamura E. Yoon D. V. Forbes X. Li J. J. Coleman 《Journal of Electronic Materials》1997,26(10):1164-1168
By monitoring the cyclic behavior of surface photoabsorption (SPA) reflectance changes during the growth of GaAs at 650°C
and with sufficient H2 purging time between the supply of trimethylgallium and AsH3, we have been able to achieve controlled growth of GaAs down to a monolayer. Our results show, as confirmed by photoluminescence
(PL) measurements, the possibility of growing highly accurate quantum well heterostructures by metalorganic chemical vapor
deposition at conventional growth temperatures. We also present our PL measurements on the InGaAs single quantum wells grown
at this temperature by monitoring the SPA signal. 相似文献
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The direction of the piezoelectric field in InGaN/GaN multiple quantum-well (MQW) structures grown by metal-organic vapor
deposition (MOCVD) was determined using excitation-power-density variable photoluminescence (PL). By comparing the excitation-power-density
dependence of the shift of the PL peak and the change of the full-width at half-maximum (FWHM) of the peak from an InGaN/GaN
MQW structure and an InGaN MQW-based light-emitting diode (LED), the piezoelectric field in the InGaN/GaN MQW structures was
unambiguously determined to be pointing toward the substrate. This result helps to identify the surface polarity of the LED
wafer as Ga-faced. 相似文献