The beginning of integrated optoelectronic circuits

The monolithic integration of electronic and optical functions on a single semiconductor crystal has become known as integrated optoelectronic circuits. These circuits usually contain a semiconductor laser and the associated driver electronics, detection and current amplication, or combine these two functions in an optical repeater. Monolithic integration leads to smaller circuits, greater ruggedness, and should result in lower cost.     

Novel Heterogeneous Integration Technology of III–V Layers and InGaAs FinFETs to Silicon

Heterogeneous integration of III–V compound semiconductors to Si substrates is regarded as a necessary step for advancing high‐speed electronics and hybrid optoelectronic systems for data processing and communications, and is extensively being pursued by the semiconductor industry. Here, an innovative fab‐compatible, hybrid integration process of III–V materials to Si, namely InGaAs thin films to insulator‐on‐Si, is reported, and the first III–V FinFET devices on Si are demonstrated. Transfer of crystalline InGaAs layers with high quality to SiO2/Si is accomplished by the formation of a robust interfacial nickel‐silicide (NiSi) bonding interface, marking the first report for using silicides in III–V hybrid integration technology. The performance of optimally fabricated InGaAs FinFETs on insulator on Si is systematically investigated for a broad range of channel lengths and Fin perimeters with excellent switching characteristics. This demonstrates a viable approach to large‐scale hybrid integration of active III‐V devices to mainstream Si CMOS technology, enabling low‐power electronic and fully‐integrated optoelectronic applications.     

Integrated optical interconnections

The use of optical interconnections between processors, boards, chips, and gates in electronic digital systems to overcome the current performance limitations is described. The advantages of optical interconnections in relation to the interconnection distance, the data capacity, and the interconnection functions are presented. The devices which will support practical implementation of optical interconnections and the integration of optical interconnection devices are discussed. The development of future integrated optoelectronic materials, processing, and fabrication technologies to support integrated optical electronics is also discussed     

Monolithic integration of SEEDs and VLSI GaAs circuits by epitaxy on electronics

Using the epitaxy-on-electronics (EoE) process, self-electrooptic effect devices (SEEDs) have been monolithically integrated with VLSI GaAs electronics. The EoE approach provides both depletion-mode and enhancement-mode MESFETs for large-scale, high-density optoelectronic circuits. The performance of SEEDs grown by molecular beam epitaxy at a reduced temperature compatible with the EoE process is shown to be robust, and modulators with contrast ratios of 2.3:1 at 7.5-V bias have been integrated on commercially processed VLSI GaAs circuits. The EoE-SEED process offers potential improvements over the FET-SEED process, facilitating the applications of SEEDs in free-space optical switching and computing.     

半导体光集成电路

半导体光集成电路(PIC)是光电子集成电路(OEIC)的一个分支,它侧重于光学互连的导波光电子器件的单片集成。由于Ⅲ-Ⅴ族材料外延晶体生长和相关工艺技术方面的进步,这一研究领域最近取得明显进展。本文讨论了集成有源和无源光波导的某些必要技术,并介绍了几种典型器件。     

Quantum wire lasers

Recent progress in the development of the concept and technology of semiconductor quantum wire (QWR) lasers is reviewed. In these quasi-one-dimensional structures, optical gain is provided by charge carriers that are quantum mechanically confined in two dimensions within wire-like active regions. These devices are expected to exhibit improved laser performance, including extremely low threshold currents (in the μA range), higher modulation bandwidth, narrower spectral linewidth, and reduced temperature sensitivity. QWR lasers would thus be particularly useful in applications involving densely packed laser arrays and monolithic integration of lasers with low-power electronics, including computer optical interconnects, optical computing, and integrated optoelectronic circuits. Approaches for fabricating these novel structures are reviewed, and recent successful demonstrations of lasing in semiconductor QWRs are described. Prospects for further progress in this area are also discussed     

Optoelectronic Integration and Its Impact on System Application

Optoelectronic monolithic integration is preferable for multigigabit transmission systems because of small waveform degradation due to interconnect parasitics in optoelectronic hybrid integration. Implementation of a wavelength division multiplexing subsystem on the optoelectronic integrated chip will further increase the transmission capacity in optical fibers. A five-wavelength integrated distributed feedback laser array with 50 Å lasing wavelength separation has been developed. Multiquantum-wells are promising as a basic structure in future optoelectronic integration. They show high potential in low threshold current laser diodes, high-frequency modulators, and high-speed detectors.     

GaAs/GaAlAs selective MOCVD epitaxy and planar ion-implantation technique for complex integrated optoelectronic circuit applications

We report on a monolithic integration technique incorporating selective GaAs/GaAlAs optical device epitaxy (based on metalorganic chemical vapor deposition (MOCVD)) and planar ion-implanted GaAs devices, formulated for application to complex integrated optoelectronic circuits. This integration scheme offers fabrication compatibility of epitaxially grown optoelectronic devices with maturing GaAs electronic circuit approaches which require selective multiple implants and small gate geometries. Details of the monolithic integration technique and an example of its application to an optoelectronic transmitter are described.     

Embedded power: a 3-D MCM integration technology for IPEM packaging application

Embedded power (EP) is the name for an integration technology for the power electronics switching stage, in which the multiple bare power chips, such as IGBTs, MOSFETs, and diodes, are buried in a ceramic frame and covered by a dielectric layer with via holes on the Al pads of the chips. Then, a planar metallization pattern is deposited onto it both for bonding to the power chips and a circuit wiring. The ceramic frame can be used as an extra thermal path and substrate for fabrication of the hybrid circuit with compatible thin- or thick-film techniques. When this integrated chips component is stacked with a base substrate and the associated components, a novel three-dimensional (3-D) multichip module (MCM) is produced. Such an integrated power electronics module (IPEM) offers performance improvement, functional integration, and process integration, as compared to conventional power hybrid modules. This paper presents the details of this technology, including the process design and implementation. A subsystem IPEM, incorporating power factor correction (PFC) and dc/dc switching stages for a distributed power system (DPS) front-end converter application, has been fabricated and characterized to demonstrate the feasibility of this power electronics integration technology. The capability for functional integration and the electrical performance improvement, which includes reduction in parasitics and increase in efficiency, are presented.     

Silicon optical modulators at 1.3-μm based on free-carrierabsorption

Silicon optical waveguide modulators, appropriate for operation in the 1.3-1.55 μm wavelength region, have been fabricated and their performance characterized at the wavelength of 1.3 μm. The modulator structures consist of p-i-n diodes integrated with silicon waveguides; device operation is based on free-carrier absorption. Modulation depths of -6.2 dB and response times less than 50 ns have been measured. Experimental results are compared with the p-i-n diode theory. It is argued that the device is suitable for integration with silicon electronics and silicon optoelectronic devices. The response times measured for the current devices may be improved by reducing the transverse dimensions of the p-i-n structure     

Metal Halide Perovskite Arrays: From Construction to Optoelectronic Applications

Inorganic semiconductor arrays revolutionize many areas of electronics, optoelectronics with the properties of multifunctionality and large-scale integration. Metal halide perovskites are emerging as candidates for next-generation optoelectronic devices due to their excellent optoelectronic properties, ease of processing, and compatibility with flexible substrates. To date, a series of patterning technologies have been applied to perovskites to realize array configurations and nano/microstructured surfaces to further improve device performances. Herein, various construction methods for perovskite crystal or thin film arrays are summarized. The optoelectronic applications of the perovskite arrays are also discussed, in particular, for photodetectors, light-emitting diodes, lasers, and nanogratings.     

Monolithic optoelectronic integration: A new component technology for lightwave communications

We discuss recent advances in the field of optoelectronic device integration. Several problems and advantages associated with integration are illustrated by discussing in detail three device types which are currently undergoing intensive investigation: integrated laser transmitters, integrated p-i-n photodetector receivers, and arrays of individually addressable detectors and light emitters. Devices fabricated using either GaAs or InP-based material systems with application at wavelength of0.82-0.87 mum and1.3-1.55 mum, respectively, are considered. It is concluded that the pursuit of optoelectronic integration will lead to an increase in device functionality, an improvement in performance, and a reduction in cost of the integrated device as compared with its hybrid counterpart.     

Optoelectronic/VLSI

Technology is presented for placing thousands of surface-normal input and output optoelectronic devices onto very large scale integration (VLSI) chips. This enables optical means of bringing information onto and off of an integrated circuit (IC), supplanting electrical means such as wire-bonds     

基于光电混合集成的四通道外调电/光转换组件

由于单片级集成技术面临开发成本高、周期长等问题,提出一种基于光电混合集成封装的四通道外调电/光转换组件.该组件利用光电混合集成技术,采用空间光学透镜耦合代替原有光纤互连方式、传输微带代替传统电缆互连方式、金丝/金带代替传统低频导线方式以及微组装工艺实现多专业裸芯片一体化气密封装代替分离组件混合装配方式,从而达到大幅度压...     

Healable Transparent Electronic Devices

With the advent of the digital era, healable electronic devices are being developed to alleviate the propagation of breakdown in electronics due to the mechanical damage caused by bending, accidental cutting or scratching. Meanwhile, flexible transparent electronics, exhibiting high transmittance and robust flexibility, are drawing enormous research efforts due to their potential applications in various integrated wearable electronics. However, the breakdown of flexible transparent electronics seriously limits their reliability and lifetime. Therefore, transparent healable electronics are desired to tackle these problems, yet most of the healable electronics are not transparent nowadays. The combination of high performance, healability, and transparency into electronics is often mutually exclusive. Herein, after a brief introduction of self‐healing materials, healable electronics, and flexible transparent electronics, the recent progress in the healable electronic devices without transparency is reviewed in detail. Then, healable transparent electronic devices with high transparency, robust portability, and reliable flexibility are summarized. They are drawing great attention owing to their potential application in optical devices as well as smart wearable and integrated optoelectronic devices. Following that, the critical challenges and prospects are highlighted for the development of healable transparent electronic devices.     

Silicon on sapphire CMOS for optoelectronic microsystems

we report on a hybrid integration approach that represents a paradigm shift from traditional optoelectronic integration and packaging methods. A recent metamorphosis and wider availability of silicon on sapphire CMOS VLSI technology is generating a great deal of excitement in the optoelectronic systems community as it offers simple and elegant solutions to the many system integration and packaging challenges that one faces when employing bulk silicon CMOS technologies. In the bulk silicon CMOS processes that are used for high-speed interface electronics the substrate is absorbing at both 850 nm and 980 nm wavelengths, necessitating complex and expensive integration procedures such as VCSEL substrate removal to enable the implementation of optical vias through the substrate. Working together, the optical transparency of the sapphire substrate, its superb thermal conductivity and the excellent high speed device characteristics of silicon-on-sapphire CMOS circuits make this technology an excellent choice for cost effective optoelectronic Die-AS-Package (DASP) systems and for implementing optical interconnects for high performance computer architectures. What is perhaps even more important, packaging and input/output interface issues can now be addressed at the CMOS wafer fabrication level where input/output structures can be accurately defined, optimized and processed using lithographic techniques, eliminating problematic die post-processing and packaging-related optical alignment issues     

Balanced operation of a GaInAs/GaInAsP multiple-quantum-wellintegrated heterodyne receiver

The balanced operation of a multiple-quantum-well balanced heterodyne receiver photonic integrated circuit (PIC) is described. Using only SMA-connected 50 Ω commercial electronics, a free-space beam sensitivity of -42.3 dBm at 108 Mb/s and -39.7 dBm at 200 Mb/s for NRZ FSK (frequency-shift keying) reception has been achieved. This represents a 14 dB improvement over any previous heterodyne receiver PIC sensitivity. In addition to providing the multichannel benefits of heterodyne reception, this is also the highest sensitivity yet reported for any OEIC (optoelectronic integrated circuit) receiver     

高速光器件的光集成及光电集成

本文介绍了高速激光器的现状，并综述了高速激光器的光集成和接收机的光电集成。最后，讨论了光集成和光电集居技术及今后的发展。     

Monolithic optoelectronic integration: A new component technology for lightwave communications

We discuss recent advances in the field of optoelectronic device integration. Several problems and advantages associated with integration are illustrated by discussing in detail three device types which are currently undergoing intensive investigation: integated laser transmitters, integrated p-i-n photodetector receivers, and arrays of individually addressable detectors and light emitters. Devices fabricated using either GaAS or InP-based material systems with application at wavelength of 0.82-0.87 µm and 1.3-1.55µm, respectively, are considered. It is concluded that the pursuit of optoelectronic integration will lead to an increase in device functionality, an improvement in performance, and a reduction in cost of the integrated device as compared with its hybrid counterpart.     

Woven Fibrous Photodetectors for Scalable UV Optical Communication Device

Fibrous photodetectors (FPDs) have attracted great interest in wearable and consumer electronics, which is a lightweight and flexible tools to achieve efficient light information transmission. However, there is a necessary compromise between high optoelectronic performance and high-level integration. Herein, a woven optoelectronic keyboard consisting of 40 PD button units is extended and integrated from four individual FPDs, with the integration level expanding by 1000%. Each FPD is based on uniform type-II TiO₂/Cs₃Cu₂I₅ heterojunction, which exhibits greatly reduced dark current by eight orders of magnitudes, large rectification ratio up to 33306@± 5V, high on–off ratio of 2.8 × 10⁴@−1 V and self-powered responsivity of 26.9 mA W⁻¹. The vacuum-deposited Cs₃Cu₂I₅ nanoparticles finely passivate the massive defects and serve as a p-type hole transport layer to improve hole transfer efficiency, which greatly promotes the radial transport and collection of photogenerated electrons. Moreover, the photocurrent remains highly stable after bending and twisting states. Intriguingly, the woven optoelectronic keyboards successfully realize logic AND/OR, further identifying the UV light signal as a keying text signal (“A–Z” letters, “0–9” numbers, and four punctuations). This work not only provides a scalable strategy to reduce device redundancy but also shows the great potential of fibrous photodetectors for wearable optical communication.