不同温度下复杂介质结构内带电规律仿真分析

卫星上某些介质结构会遭遇较大范围的温度变化, 其电导率会随之出现数量级的变化, 这将显著影响内带电结果. 受限于电导率-温度模型和内带电三维仿真工具, 该温度效应远没有得到深入研究. 为此, 在真空变温(253-353 K)和强电场(MV/m量级)条件下测试了某种星用改性聚酰亚胺介质的电导率, 借鉴Arrhenius电导率-温度模型并考虑强电场下电导率的增强效应, 发现电导活化能取值为0.40 eV时, 可得到良好的拟合结果. 在此基础上, 同时考虑辐射诱导电导率, 采用地球同步轨道恶劣电子辐射能谱, 对该类介质盘环结构进行内带电三维仿真, 发现其内带电程度随温度降低而显著增加, 带电最严重的区域位于靠近辐射源的接地面边线. 温度低于250 K时, 2 mm屏蔽铝板下该区域的场强可达到10⁷ V/m量级, 发生介质击穿放电的可能性较大. 所讨论的电导率-温度模型与内带电三维建模方法对进一步评估卫星介质结构内带电程度和做好防护设计具有重要参考意义.     

一种新的航天器外露介质充电模型

为综合考虑高能电子辐射与周围等离子体对航天器外露介质充电的影响,在航天器内带电模型的基础上,通过添加边界充电电流来考虑等离子体与航天器介质表面的相互作用,并统一参考电位为等离子体零电位,建立了航天器外露介质充电模型,给出了新模型的一维稳态解法,并与表面充电模型和深层充电模型进行了对比分析.结果表明:新建模型能够综合考虑表面入射电流、深层沉积电流和传导电流对充电的耦合作用过程,实现外露介质表面和深层耦合充电计算,有利于全面评估航天器外露介质的充电问题.     

卫星中介质深层充电特征研究

介质深层充电效应是诱发地球同步轨道卫星运行故障和异常的重要因素之一.通过数值模拟方法对卫星介质材料中充电所致最大电场与高能电子能谱、介质厚度，及屏蔽厚度等的关系进行了详细研究，给出了介质中最大电场的基本特征. 关键词： 卫星 介质深层充电 高能电子 计算机模拟     

电子辐照下聚合物介质深层充电现象研究

空间辐射环境中,聚合物介质的深层充放电效应是威胁航天器安全的重要因素之一.文中在Chudleigh和von Berlepsch所发展的电位衰减模型基础上引入传输电流项,考虑了电子入射引起的感应电导率和感应电场的影响,提出了新的分析研究介质材料深层充电规律和特征的模型.通过该模型,分析了不同辐射条件下介质的表面电位、内部电荷与电场分布的变化,并设计实验及援引其他实验数据对模型分析结果进行验证.分析和实验结果表明,聚合物介质在深层充电过程中的平衡电位随着入射电子束流强度和介质电阻率的增加而增大,决定深层充电平 关键词： 深层充电 电荷传输模型 电子束 聚合物     

高能电子辐射下聚四氟乙烯深层充电特性

介质深层充放电现象是诱发航天器异常故障的重要因素之一.分析了高能电子辐射下介质内部电荷沉积、能量沉积特性和电导特性,考虑了真空与介质界面电荷对电场分布的影响,建立了介质二维深层充电的物理模型,并基于有限元方法实现了数值计算.计算了高能电子辐射下聚四氟乙烯的深层充电特性.结果表明:真空环境下,介质的表面存在较弱的反向电场,随着介质深度增大,电场减小至零,随后逐渐增大,最大值出现在靠近接地附近,但在接地点,电场存在小幅降低.分析了不同辐射时间下(1 h,1 d,10 d和30 d),介质内部最大电位和最大电场的时空演变特性.随着辐射时间的增加,最大电位由-128V增加至-7.9×104V,最大电场由2.83×105V·m-1增加至1.76×108V·m-1.讨论了入射电子束流密度对最大电场的影响,典型空间电子环境(1×10-10A·m-2)下,电子辐照10 d时,介质内部最大电场为2.95×106V·m-1.而恶劣空间电子环境(2×10-8A·m-2)下,电子辐射42 h,介质内部最大电场即达到108V·m-1,超过材料击穿阈值(约为108V·m-1),极易发生放电现象.该物理模型和数值方法可以作为航天器复杂部件多维电场仿真的研究基础.     

基于Geant 4的介质深层充电电场计算

基于Geant4模拟了电子在Teflon介质中的电荷输运过程,获得了其内部的电流密度、剂量率和电荷沉积量沿深度的分布曲线,进而利用电荷连续性方程、泊松方程和深层俘获方程求解出Teflon中高能量、小束流电子辐照下的电场分布. 将介质平板充电过程简化为屏蔽铝板与分层介质组成的Geant4模型,电子源为1.0MeV,0.1pA/cm²的平面源. 通过记录经过各层介质的电子电量和各层介质内沉积能量和电子数目,用统计平均的方法获得了介质内电流密度、剂量率和电荷沉积量沿深度的分布规律. 介质内 关键词： 卫星 介质深层充电 Geant4 电场     

电子辐照下聚合物介质内部放电模型研究

空间电子辐照环境中,聚合物介质充放电现象是威胁航天器安全的重要因素. 传统航天器介质充放电模型仅能分析材料充电过程,缺乏对放电前后介质电位残余情况与放电脉冲强弱的评估. 本文通过引入介质放电电导率,在数值积分 充电模型基础上建立同时描述航天器介质内部充电和放电过程的新模型,并将模型计算结果与实验数据进行比较,验证了所构建的模型. 模型分析结果表明,聚合物介质放电残余电位与放电电流脉冲宽度随着样品电阻率的增加而增大,放电电流强度随着临界电场强度和充电时间的增加而增强,其增幅随着辐照电子束流强度的增加而增大. 关键词： 放电模型 内部放电 电子辐照 航天器介质     

基于多尺度理论的电各向异性介质椭球内电场

 基于电磁场的多尺度变换理论,将一个各向异性介质椭球重构为一个各向同性介质椭球,进一步得到了新椭球的形体参数。利用各向同性椭球电磁场与各向异性椭球电磁场的多尺度关系,得出了各向异性介质椭球内电场的解析表达式,对所得结果进行了验证。计算了椭球内电场方向与外电场方向的夹角,仿真结果表明：外电场的方向对椭球内电场的影响不大,介电常数张量对椭球内电场的方向和大小有较大的影响。     

入射电子能量对低密度聚乙烯深层充电特性的影响

高能带电粒子与航天器介质材料相互作用引起的深层带电现象, 一直是威胁航天器安全运行的重要因素之一. 考虑入射电子在介质中的电荷沉积、能量沉积分布以及介质中的非线性暗电导和辐射诱导电导, 建立了介质深层充电的单极性电荷输运物理模型. 通过求解电荷连续性方程和泊松方程, 可以得出不同能量 (0.1–0.5 MeV) 电子辐射下, 低密度聚乙烯 (厚度为1 mm) 介质中的电荷输运特性. 计算结果表明, 不同能量的电子辐射下, 介质充电达到平衡时, 最大电场随入射能量的增加而减小; 同一能量辐射下, 最大电场随束流密度的增大而增加. 入射电子能量较低时 (≤ 0.3 MeV) , 最大电场随束流密度的变化趋势基本相同. 具体表现为: 当束流密度大于3× 10^-9 A/m²时, 最大场强超过击穿阈值2×10⁷ V/m, 发生静电放电 (ESD) 的可能性较大. 随着入射电子能量的增加, 发生静电放电 (ESD) 的临界束流密度增大, 在能量为0.4 MeV时, 临界束流密度为6×10^-8 A/m². 当能量大于等于0.5 MeV时, 在束流密度为10^-9–10^-6 A/m²的范围内, 均不会发生静电放电 (ESD) . 该物理模型对于深入研究深层充放电效应、评估航天器在空间环境下 深层带电程度及防护设计具有重要的意义. 关键词： 高能电子辐射 低密度聚乙烯(LDPE) 介质深层充电 电导特性     

QMC模型的介质相关参数的确定及核物质中的夸克凝聚

通过把QMC模型参数展到σ场的一阶项来引入模型参数的核介质效应,并利用核子袋在介质中的平衡条件自洽地确定展开系数.计算结果表明袋参数及核子半径受介质影响较大,而零点运动参数则保持不变.在此基础上,分析了介质相关的模型参数对核物质状态方程及夸克凝聚的影响.     

Variable range hopping conductivity in manganites

The nature of variable range hopping (VRH) conductivity which is observed in the insulating state of doped rare-earth manganites with perovskite structure is considered in the two component model of metallic-like droplets embedded in dielectric matrix. When the density of the metallic droplets is less than the percolation limit, the system falls into the insulating state with VRH conductivity defined by inter granular tunneling and electrostatic barriers. With temperature increasing the VRH regime is transforming into the hopping regime of small radius polarons.     

Variable range hopping and/or phonon-assisted tunneling mechanism of electronic transport in polymers and carbon nanotubes

We review and compare two models recently used to describe electronic transport in polymer fibers/nanotubes and carbon nanotubes including graphene nanoribbons, namely, variable range hopping (VRH) in different versions and their modifications on the one hand and electric-field-induced phonon-assisted tunneling (PhAT) on the other hand. The VRH model is mainly approved on behalf of the results of temperature dependences. However, the field dependencies of the conductivity in the framework of this model remain practically unexplained. At the same time, the PhAT model describes properly not only temperature dependence of conductivity measured in a wide temperature range, but also conductivity/current dependences on field strength using the same set of parameters characterizing the materials     

Electrical conduction properties of Si δ-doped GaAs grown by MBE

The temperature dependent Hall effect and resistivity measurements of Si δ-doped GaAs are performed in a temperature range of 25–300 K. The temperature dependence of carrier concentration shows a characteristic minimum at about 200 K, which indicates a transition from the conduction band conduction to the impurity band conduction. The temperature dependence of the conductivity results are in agreement with terms due to conduction band conduction and localized state hopping conduction in the impurity band. It is found that the transport properties of Si δ-doped GaAs are mainly governed by the dislocation scattering mechanism at high temperatures. On the other hand, the conductivity follows the Mott variable range hopping conduction (VRH) at low temperatures in the studied structures.     

Alternating current characterization of nano-Pt(Ⅱ)octaethylporphyrin(PtOEP) thin film as a new organic semiconductor

Alternating current(AC) conductivity and dielectric properties of thermally evaporated Au/Pt OEP/Au thin films are investigated each as a function of temperature(303 K–473 K) and frequency(50 Hz–5 MHz).The frequency dependence of AC conductivity follows the Jonscher universal dynamic law.The AC-activation energies are determined at different frequencies.It is found that the correlated barrier hopping(CBH) model is the dominant conduction mechanism.The variation of the frequency exponent s with temperature is analyzed in terms of the CBH model.Coulombic barrier height Wm,hopping distance Rω,and the density of localized states N(EF) are valued at different frequencies.Dielectric constant ε_1(ω,T) and dielectric loss ε_2(ω,T) are discussed in terms of the dielectric polarization process.The dielectric modulus shows the non-Debye relaxation in the material.The extracted relaxation time by using the imaginary part of modulus(M')is found to follow the Arrhenius law.     

Some dielectric properties of novel nano‐s‐triazine derivatives

The evaluation of the dielectric properties of s‐triazine and its mono‐, di‐, tri‐(trityloxy)triazine derivates as a function of temperature from room temperature to 200°C, and frequency varying from 50 Hz to 5 MHz was performed. The dielectric constant increases with the increase of both temperature and frequency. Moreover, from the measured dielectric loss ε″ we found that there are different types of electric energy losses in the presence of an alternating electric field from which we calculate the entropy ΔS and the enthalpy change ΔH of the dielectric relaxation for each sample. The dielectric relaxation was attributed to the phase transition of the s‐triazine derivatives. Additionally, ac‐electrical conductivity as a function of frequency at different temperatures were studied. Analysis of ac conductivity data indicates that the correlated barrier hopping model is the most suitable mechanism for the ac‐conductance behavior. X‐ray diffraction and scanning electron microscopy were performed on the compounds under consideration to determine the grain size of each sample, which was found in the range of 3 to 100 nm.     

Direct current hopping conductance in one-dimensional diagonal disordered systems

Based on a tight-binding disordered model describing a single electron band, we establish a direct current (dc) electronic hopping transport conductance model of one-dimensional diagonal disordered systems, and also derive a dc conductance formula. By calculating the dc conductivity, the relationships between electric field and conductivity and between temperature and conductivity are analysed, and the role played by the degree of disorder in electronic transport is studied. The results indicate the conductivity of systems decreasing with the increase of the degree of disorder, characteristics of negative differential dependence of resistance on temperature at low temperatures in diagonal disordered systems, and the conductivity of systems decreasing with the increase of electric field, featuring the non-Ohm's law conductivity.     

Hopping conductivity and Coulomb correlations in 2D arrays of Ge/Si quantum dots

The temperature and magnetic-field dependences of the conductivity associated with hopping transport of holes over a 2D array of Ge/Si(001) quantum dots with various filling factors are studied experimentally. A transition from the Éfros-Shklovski? law for the temperature dependence of hopping conductivity to the Arrhenius law with an activation energy equal to 1.0–1.2 meV is observed upon a decrease in temperature. The activation energy for the low-temperature conductivity increases with the magnetic field and attains saturation in fields exceeding 4 T. It is found that the magnetoresistance in layers of quantum dots is essentially anisotropic: the conductivity decreases in an increasing magnetic field oriented perpendicularly to a quantum dot layer and increases in a magnetic field whose vector lies in the plane of the sample. The absolute values of magnetoresistance for transverse and longitudinal field orientations differ by two orders of magnitude. The experimental results are interpreted using the model of many-particle correlations of holes localized in quantum dots, which lead to the formation of electron polarons in a 2D disordered system.     

Power-law temperature dependence of thermally excited transport in one-dimensional systems from Monte Carlo simulation

We investigate the temperature dependence of electric conductance in one-dimensional (1D) systems with thermally excited electron transport under various bias voltages by using Monte Carlo simulation based on the variable-rang hopping (VRH) formula. We find that the temperature dependence of the transport can show a power law behavior as a result of summation over a large number of electron traveling paths although the hopping intensity in every step in the VRH formula is exponentially dependent on the temperature. This can well explain the temperature dependence of conductance measured in various experiments on 1D systems. Without taking the interaction between electrons into account, we can also merge most of our data onto one “universal curve” suggested from the Luttinger Liquid theory. This indicates that the phonon assisted hoppings in disordered 1D systems play an important role at finite temperatures and can provide a simple and efficient explanation for the experimentally observed behavior.