共查询到18条相似文献，搜索用时 66 毫秒
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研究了p型(100)InAs在不同中心波长飞秒激发光(750—850nm)作用下的太赫兹(THz)波辐射特性.这种太赫兹辐射的光谱性质与光学Dember效应密切相关,飞秒脉冲激发下产生的载流子在InAs表面的Dember场内做加速运动,从而辐射出THz电磁波.实验结果表明：不同中心波长的激发光作用下,InAs表面产生的Dember电场、光生载流子浓度、谷间散射效应以及处于不同状态的载流子数目都发生了变化,因而激发出太赫兹波的功率、振幅、频谱分布和有效谱宽是不同的.这项研究将有利于THz时域光谱技术以及实验 相似文献
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研究了窄带隙材料InAs和三种不同掺杂浓度的InN在不同抽运光强激发下产生太赫兹(THz)波的辐射特性.实验结果表明:在相同的抽运光强下,InN和InAs辐射的THz信号强度在同一量级,InAs较InN辐射效率要高一些.随着抽运光强的增大,这几种材料的发射光谱变得更宽,当抽运光增大到一定强度时,它们的发射光谱半极大值全宽(HMFW)趋于恒定.InN比InAs更容易在较低功率的抽运光作用下获得宽带太赫兹光谱.研究也表明,不同掺杂浓度对辐射THz波的强度及辐射效率有很大影响.这项研究对于探索半导体表面辐射太赫关键词：InNInAs太赫兹抽运光强 相似文献
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针对光学参量振荡产生太赫兹波转换效率低的缺点, 提出了级联参量振荡产生太赫兹波的新机理以提高转换效率. 以周期极化铌酸锂晶体为例, 对级联参量振荡产生太赫兹波的原理和过程进行了理论研究. 分析了抽运光波长、周期极化铌酸锂晶体极化周期和工作温度对产生一阶、二阶闲频光频率的影响. 推导了三波共线相互作用条件下太赫兹波的增益特性和吸收特性. 计算结果表明, 通过级联参量振荡可以有效提高太赫兹波的转换效率, 并可以得到宽调谐的太赫兹波输出. 基于分析结果, 设计了周期极化铌酸锂晶体级联参量振荡产生高效率、宽调谐、窄线宽、连续太赫兹波的实验.关键词：太赫兹波太赫兹波参量振荡级联参量振荡 相似文献
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光子晶体对太赫兹波的调制特性研究 总被引：1，自引：0，他引：1
利用传输矩阵方法研究了掺杂半导体n-GaAs/聚碳酸脂一维光子晶体的太赫兹波透射谱.研究结果发现,与一般由两种介电材料组成的一维光子晶体不同,由于掺杂半导体中自由载流子对太赫兹波存在较强的吸收,所以这种材料组成的一维光子晶体除可形成光子带隙外,还可以增强n-GaAs对太赫兹波的透射.同时还提出了一种基于这种一维光子晶体的太赫兹波调制器,通过外加电压控制半导体中电子浓度的大小可实现对太赫兹透射波幅度的调制.关键词：掺杂半导体光子晶体太赫兹波太赫兹波的调制 相似文献
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利用自由空间太赫兹电光取样方法,测量了在高电场下,GaAs中受飞秒激光脉冲激发的电子所辐射出的太赫兹电磁波,发现从样品中辐射出的和电子加速度成正比的太赫兹电磁波电场强度ETHz（t）,表现出双极特性.通过分析GaAs中辐射出的太赫兹电磁波的傅里叶变换谱,首次实验上得到在阶跃电场下的GaAs的电子太赫兹功耗谱.研究发现,当电场小于50 kV/cm时,由电子谷间散射引起的负功耗（即增益）的截止频率νc,随着电场的增大而增大;当电场大于50 kV/cm时,负功耗的截止频率νc开始在750 GHz（10 K）附近饱和.关键词：太赫兹非平衡载流子功耗谱谷间散射 相似文献
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利用康普顿散射实现太赫兹皮秒脉冲的分析 总被引：1，自引：0，他引：1
研究了利用微波与电子束团的康普顿散射实现太赫兹的方法、光子产额和辐射功率。推导出了单个电子产生的太赫兹的光子产额和辐射功率表达式,也推导出了电子束团产生的太赫兹的光子总产额和辐射总功率表达式。结果发现：利用微波与电子束团发生康普顿垂直散射,可以产生太赫兹皮秒脉冲;单个电子产生的太赫兹光子产额与微波功率、微波波长成正比,与微波束截面积成反比;单个电子产生的太赫兹辐射功率与微波功率、电子Lorentz因子的平方成正比,与微波束截面积成反比;电子束团产生的太赫兹光子总产额与微波功率的平方、微波波长的平方成正比,与微波束截面积的平方成反比;电子束团产生的太赫兹辐射总功率与微波功率的平方、微波波长以及电子Lorentz因子的平方成正比,与微波束截面积的平方成反比。 相似文献
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研究了利用微波与电子束团的康普顿散射实现太赫兹的方法、光子产额和辐射功率。推导出了单个电子产生的太赫兹的光子产额和辐射功率表达式,也推导出了电子束团产生的太赫兹的光子总产额和辐射总功率表达式。结果发现：利用微波与电子束团发生康普顿垂直散射,可以产生太赫兹皮秒脉冲;单个电子产生的太赫兹光子产额与微波功率、微波波长成正比,与微波束截面积成反比;单个电子产生的太赫兹辐射功率与微波功率、电子Lorentz因子的平方成正比,与微波束截面积成反比;电子束团产生的太赫兹光子总产额与微波功率的平方、微波波长的平方成正比,与微波束截面积的平方成反比;电子束团产生的太赫兹辐射总功率与微波功率的平方、微波波长以及电子Lorentz因子的平方成正比,与微波束截面积的平方成反比。 相似文献
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The linear and nonlinear characteristics of time-resolved photoluminescence(PL) of n-type bulk semiconductor Ga As modulated with terahertz(THz) pulse are studied by using an ensemble Monte Carlo(EMC) method. In this paper the center energy valley(Γ valley) electron concentration changes with the pulse delay time, sampling time and the outfield are mainly discussed. The results show that the sampling time and the THz field should exceed certain thresholds to effectively excite photoluminescence quenching(PLQ). Adopting a direct current(DC) field makes the sampling time threshold shortened and the linear range of THz field-modulation PL expanded. Moreover, controlling the sampling time and the outfield intensity can improve the linear quality: with forward time, the larger outfield is used; with backward time, the smaller outfield is used. This study can provide a theoretical basis of THz field linear modulation in a larger range for new light emitting devices. 相似文献
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In this paper we investigated the THz radiation dynamics in InAs using the ensemble Monte Carlo method. Our simulations indicated that THz pulse shapes (temporal waveforms) are closely related with the pump laser fluence. The sharp, negative peak of a THz pulse may result from the electron intervalley transfers from center valley to satellite valleys. Our numerical results show that higher laser fluence is an advantage in enhancing the output of high frequency components. The spato-temporal distributions of photo-Dember fields on the semiconductor surface were also analyzed. 相似文献
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MONTE CARLO STUDY OF SPATIO-TEMPORAL DISTRIBUTIONS OF PHOTO-DEMBER FIELD AND THZ RADIATION FROM InAs
The spatio-temporal distributions of photo-Dember fields on the semiconductor surface of InAs and the pump wavelength-dependent
dynamics of THz radiation from this semiconductor have been investigated with the method of ensemble Monte Carlo Simulation.
Our simulations not only confirm the experimental results [P. Gu et al., J. Appl. Phys. 91, 5533(2002)] that the pump wavelength-dependent
feature of THz pulse amplitudes for InAs is completely different with that for GaAs, but also point out that the corresponding
mechanism is the characteristics of photo-Dember fields. 相似文献
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Jelena Sjakste Nathalie Vast Hariom Jani Sergey Obukhov Valeriy Tyuterev 《physica status solidi b》2013,250(4):716-720
In this work, we examine the pressure and biaxial tensile strain dependence of the intervalley electron–phonon matrix elements in the lowest conduction band of GaAs, GaP, Si and Ge within the density functional perturbation theory. We study both individual transitions and average deformation potential values which can be used as parameters in transport simulations. In the case of a hydrostatic pressure, we draw the general conclusion that the hydrostatic pressure dependence of the intervalley electron–phonon matrix elements can be safely neglected in the interpretation of most commonly studied phenomena. In contrast, the case of a biaxial strain in silicon shows that strain‐dependence should be taken into account in calculations of the intervalley electron–phonon matrix elements. 相似文献
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Dong-feng Liu Yi-Zhi Tan 《International Journal of Infrared and Millimeter Waves》2005,26(9):1265-1275
In this paper the THz radiation dynamics of InSb and InAs, two typical narrow band semiconductors, was investigated using the ensemble Monte Carlo method. Our simulations indicated that the single mechanism of current surge only can result in small difference of THz emission efficiency for InSb and InAs. The great advantage of InAs over InSb in THz emission efficiency that was found in a published work is possibly due to the mechanism of optical rectification. In addition, under low excitation level, we found the emission efficiency of InSb is advantage over that of InAs, but under high excitation level, the result is reversed. On the other hand, through the Fourier transforms of temporal THz waveforms we found that the main frequency of THz pulses from InAs is always higher than that of InSb. 相似文献
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We study theoretically the low-temperature electronic transport property of a straight quantum wire under the irradiation of a finite-range transversely polarized external terahertz (THz) electromagnetic (EM) field. Using the freeelectron model and the scattering matrix approach, we show an unusual behaviour of the electronic transmission of this system. A sharp step-structure appears in the electronic transmission probability as the EM field strength increases to a threshold value when a coherent EM field is applied. We demonstrate that this effect physically comes from the inelastic scattering of electrons with lateral photons through intersubband transitions. 相似文献
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A theoretical model was proposed to describe the effects of external bias electric field on terahertz(THz)generated in air plasma.The model predicted that for a plasma in a bias electric field,the amplification effect of the THz wave intensity increases with the increase of the excitation laser wavelength.We experimentally observed the relationship between the THz enhancement effect and the electric field strength at different wavelengths.Experimental results showed a good agreement with the model predictions.These results enhance our understanding of the physical mechanism by which femtosecond lasers excite air to generate THz and extend the practical applications of THz generation and modulation. 相似文献
